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Electrically tunable electroluminescence from SiNx-based light-emitting devicesDongsheng Li, Feng Wang, Deren Yang, and Duanlin Que »View Author Affiliations
Dongsheng Li,*
Feng Wang,
Deren Yang,
and Duanlin Que
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China *Corresponding author: mselds@zju.edu.cn |
Optics Express, Vol. 20, Issue 16, pp. 17359-17366 (2012)
http://dx.doi.org/10.1364/OE.20.017359
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Abstract
Two obvious Gauss peaks are observed in SiNx-based light-emitting devices with silver nanoparticles deposited onto the luminous layer, both of which are blue shifted with the increase of injected current. The origin of these two peaks is discussed by means of the changes of their positions, relative intensities, and full width at half maximum. We attribute the blue-shift of both electroluminescence peaks to the improvement of carrier injection as carriers can be injected into higher energy levels along their corresponding band tails, which is also confirmed by the changes of the transport mechanism.
© 2012 OSA
OCIS Codes
(230.2090) Optical devices : Electro-optical devices
(300.6280) Spectroscopy : Spectroscopy, fluorescence and luminescence
(310.6860) Thin films : Thin films, optical properties
(350.4600) Other areas of optics : Optical engineering
ToC Category:
Optical Devices
History
Original Manuscript: May 24, 2012
Revised Manuscript: June 25, 2012
Manuscript Accepted: July 10, 2012
Published: July 16, 2012
Citation
Dongsheng Li, Feng Wang, Deren Yang, and Duanlin Que, "Electrically tunable electroluminescence from SiNx-based light-emitting devices," Opt. Express 20, 17359-17366 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-16-17359
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References
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- C. Huh, K.-H. Kim, B. K. Kim, W. Kim, H. Ko, C.-J. Choi, and G. Y. Sung, “Enhancement in light emission efficiency of a silicon nanocrystal light-emitting diode by multiple-luminescent structures,” Adv. Mater. (Deerfield Beach Fla.)22(44), 5058–5062 (2010). [CrossRef] [PubMed]
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- Z. H. Cen, T. P. Chen, L. Ding, Z. Liu, J. I. Wong, M. Yang, W. P. Goh, and S. Fung, “Influence of implantation dose on electroluminescence from Si-implanted silicon nitride thin films,” Appl. Phys., A Mater. Sci. Process.104(1), 239–245 (2011). [CrossRef]
- Z. H. Cen, T. P. Chen, Z. Liu, Y. Liu, L. Ding, M. Yang, J. I. Wong, S. F. Yu, and W. P. Goh, “Electrically tunable white-color electroluminescence from Si-implanted silicon nitride thin film,” Opt. Express18(19), 20439–20444 (2010). [CrossRef] [PubMed]
- Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009). [CrossRef]
- E. Jacques, L. Pichon, O. Debieu, and F. Gourbilleau, “Electrical behavior of MIS devices based on silicon nanoclusters embedded in SiOxNy and SiO2 films,” Nanoscale Res. Lett.6(1), 170 (2011). [CrossRef] [PubMed]
- T. Güngör and H. Tolunay, “Drift mobility measurements in a-SiNx: H,” J. Non-Cryst. Solids282(2–3), 197–202 (2001). [CrossRef]
- T. Shirasawa, K. Hayashi, S. Mizuno, S. Tanaka, K. Nakatsuji, F. Komori, and H. Tochihara, “Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface,” Phys. Rev. Lett.98(13), 136105 (2007). [CrossRef] [PubMed]
- D. Li, J. Huang, and D. Yang, “Enhanced electroluminescence of silicon-rich silicon nitride light-emitting devices by NH3 plasma and annealing treatment,” Physica E41(6), 920–922 (2009). [CrossRef]
- M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNX film. II. Defect states electroluminescence,” J. Appl. Phys.104(8), 083505 (2008). [CrossRef]
- R. Huang, D. Q. Wang, H. L. Ding, X. Wang, K. J. Chen, J. Xu, Y. Q. Guo, J. Song, and Z. Y. Ma, “Enhanced electroluminescence from SiN-based multilayer structure by laser crystallization of ultrathin amorphous Si-rich SiN layers,” Opt. Express18(2), 1144–1150 (2010). [CrossRef] [PubMed]
- R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008). [CrossRef]
- J. R. Sheats, H. Antoniadis, M. Hueschen, W. Leonard, J. Miller, R. Moon, D. Roitman, and A. Stocking, “Organic electroluminescent devices,” Science273(5277), 884–888 (1996). [CrossRef] [PubMed]
- C. Huh, K.-H. Kim, B. K. Kim, W. Kim, H. Ko, C.-J. Choi, and G. Y. Sung, “Enhancement in light emission efficiency of a silicon nanocrystal light-emitting diode by multiple-luminescent structures,” Adv. Mater. (Deerfield Beach Fla.)22(44), 5058–5062 (2010). [CrossRef] [PubMed]
- Y. Yonamoto, Y. Inaba, and N. Akamatsu, “Compositional dependence of trap density and origin in thin silicon oxynitride film investigated using spin dependent Poole–Frenkel current,” Appl. Phys. Lett.98(23), 232905 (2011). [CrossRef]
- E. Jacques, L. Pichon, O. Debieu, and F. Gourbilleau, “Electrical behavior of MIS devices based on silicon nanoclusters embedded in SiOxNy and SiO2 films,” Nanoscale Res. Lett.6(1), 170 (2011). [CrossRef] [PubMed]
- C. Huh, K.-H. Kim, B. K. Kim, W. Kim, H. Ko, C.-J. Choi, and G. Y. Sung, “Enhancement in light emission efficiency of a silicon nanocrystal light-emitting diode by multiple-luminescent structures,” Adv. Mater. (Deerfield Beach Fla.)22(44), 5058–5062 (2010). [CrossRef] [PubMed]
- B.-H. Kim, C.-H. Cho, J.-S. Mun, M.-K. Kwon, T.-Y. Park, J.-S. Kim, C.-C. Byeon, J. Lee, and S.-J. Park, “Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons,” Adv. Mater. (Deerfield Beach Fla.)20(16), 3100–3104 (2008). [CrossRef]
- B.-H. Kim, C.-H. Cho, S.-J. Park, N.-M. Park, and G. Y. Sung, “Ni/Au contact to silicon quantum dot light-emitting diodes for the enhancement of carrier injection and light extraction efficiency,” Appl. Phys. Lett.89(6), 063509 (2006). [CrossRef]
- B.-H. Kim, C.-H. Cho, J.-S. Mun, M.-K. Kwon, T.-Y. Park, J.-S. Kim, C.-C. Byeon, J. Lee, and S.-J. Park, “Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons,” Adv. Mater. (Deerfield Beach Fla.)20(16), 3100–3104 (2008). [CrossRef]
- C. Huh, K.-H. Kim, B. K. Kim, W. Kim, H. Ko, C.-J. Choi, and G. Y. Sung, “Enhancement in light emission efficiency of a silicon nanocrystal light-emitting diode by multiple-luminescent structures,” Adv. Mater. (Deerfield Beach Fla.)22(44), 5058–5062 (2010). [CrossRef] [PubMed]
- C. Huh, K.-H. Kim, B. K. Kim, W. Kim, H. Ko, C.-J. Choi, and G. Y. Sung, “Enhancement in light emission efficiency of a silicon nanocrystal light-emitting diode by multiple-luminescent structures,” Adv. Mater. (Deerfield Beach Fla.)22(44), 5058–5062 (2010). [CrossRef] [PubMed]
- C. Huh, K.-H. Kim, B. K. Kim, W. Kim, H. Ko, C.-J. Choi, and G. Y. Sung, “Enhancement in light emission efficiency of a silicon nanocrystal light-emitting diode by multiple-luminescent structures,” Adv. Mater. (Deerfield Beach Fla.)22(44), 5058–5062 (2010). [CrossRef] [PubMed]
- T. Shirasawa, K. Hayashi, S. Mizuno, S. Tanaka, K. Nakatsuji, F. Komori, and H. Tochihara, “Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface,” Phys. Rev. Lett.98(13), 136105 (2007). [CrossRef] [PubMed]
- B.-H. Kim, C.-H. Cho, J.-S. Mun, M.-K. Kwon, T.-Y. Park, J.-S. Kim, C.-C. Byeon, J. Lee, and S.-J. Park, “Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons,” Adv. Mater. (Deerfield Beach Fla.)20(16), 3100–3104 (2008). [CrossRef]
- B.-H. Kim, C.-H. Cho, J.-S. Mun, M.-K. Kwon, T.-Y. Park, J.-S. Kim, C.-C. Byeon, J. Lee, and S.-J. Park, “Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons,” Adv. Mater. (Deerfield Beach Fla.)20(16), 3100–3104 (2008). [CrossRef]
- J. R. Sheats, H. Antoniadis, M. Hueschen, W. Leonard, J. Miller, R. Moon, D. Roitman, and A. Stocking, “Organic electroluminescent devices,” Science273(5277), 884–888 (1996). [CrossRef] [PubMed]
- F. Wang, D. Li, D. Yang, and D. Que, “Enhancement of light-extraction efficiency of SiNx light emitting devices through a rough Ag island film,” Appl. Phys. Lett.100(3), 031113 (2012). [CrossRef]
- D. Li, J. Huang, and D. Yang, “Enhanced electroluminescence of silicon-rich silicon nitride light-emitting devices by NH3 plasma and annealing treatment,” Physica E41(6), 920–922 (2009). [CrossRef]
- M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNX film. II. Defect states electroluminescence,” J. Appl. Phys.104(8), 083505 (2008). [CrossRef]
- P. Cheng, D. Li, and D. Yang, “Influence of substrates in ZnO devices on the surface plasmon enhanced light emission,” Opt. Express16(12), 8896–8901 (2008). [CrossRef] [PubMed]
- J. Warga, R. Li, S. N. Basu, and L. Dal Negro, “Electroluminescence from silicon-rich nitride/silicon superlattice structures,” Appl. Phys. Lett.93(15), 151116 (2008). [CrossRef]
- R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008). [CrossRef]
- G.-R. Lin, Y.-H. Pai, C.-T. Lin, and C.-C. Chen, “Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes,” Appl. Phys. Lett.96(26), 263514 (2010). [CrossRef]
- G.-R. Lin, Y.-H. Pai, C.-T. Lin, and C.-C. Chen, “Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes,” Appl. Phys. Lett.96(26), 263514 (2010). [CrossRef]
- Z. H. Cen, T. P. Chen, Z. Liu, Y. Liu, L. Ding, M. Yang, J. I. Wong, S. F. Yu, and W. P. Goh, “Electrically tunable white-color electroluminescence from Si-implanted silicon nitride thin film,” Opt. Express18(19), 20439–20444 (2010). [CrossRef] [PubMed]
- Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009). [CrossRef]
- Z. H. Cen, T. P. Chen, L. Ding, Z. Liu, J. I. Wong, M. Yang, W. P. Goh, and S. Fung, “Influence of implantation dose on electroluminescence from Si-implanted silicon nitride thin films,” Appl. Phys., A Mater. Sci. Process.104(1), 239–245 (2011). [CrossRef]
- Z. H. Cen, T. P. Chen, Z. Liu, Y. Liu, L. Ding, M. Yang, J. I. Wong, S. F. Yu, and W. P. Goh, “Electrically tunable white-color electroluminescence from Si-implanted silicon nitride thin film,” Opt. Express18(19), 20439–20444 (2010). [CrossRef] [PubMed]
- Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009). [CrossRef]
- R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008). [CrossRef]
- A. A. Middleton and N. S. Wingreen, “Collective transport in arrays of small metallic dots,” Phys. Rev. Lett.71(19), 3198–3201 (1993). [CrossRef] [PubMed]
- J. R. Sheats, H. Antoniadis, M. Hueschen, W. Leonard, J. Miller, R. Moon, D. Roitman, and A. Stocking, “Organic electroluminescent devices,” Science273(5277), 884–888 (1996). [CrossRef] [PubMed]
- T. Shirasawa, K. Hayashi, S. Mizuno, S. Tanaka, K. Nakatsuji, F. Komori, and H. Tochihara, “Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface,” Phys. Rev. Lett.98(13), 136105 (2007). [CrossRef] [PubMed]
- J. R. Sheats, H. Antoniadis, M. Hueschen, W. Leonard, J. Miller, R. Moon, D. Roitman, and A. Stocking, “Organic electroluminescent devices,” Science273(5277), 884–888 (1996). [CrossRef] [PubMed]
- B.-H. Kim, C.-H. Cho, J.-S. Mun, M.-K. Kwon, T.-Y. Park, J.-S. Kim, C.-C. Byeon, J. Lee, and S.-J. Park, “Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons,” Adv. Mater. (Deerfield Beach Fla.)20(16), 3100–3104 (2008). [CrossRef]
- T. Shirasawa, K. Hayashi, S. Mizuno, S. Tanaka, K. Nakatsuji, F. Komori, and H. Tochihara, “Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface,” Phys. Rev. Lett.98(13), 136105 (2007). [CrossRef] [PubMed]
- G.-R. Lin, Y.-H. Pai, C.-T. Lin, and C.-C. Chen, “Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes,” Appl. Phys. Lett.96(26), 263514 (2010). [CrossRef]
- B.-H. Kim, C.-H. Cho, S.-J. Park, N.-M. Park, and G. Y. Sung, “Ni/Au contact to silicon quantum dot light-emitting diodes for the enhancement of carrier injection and light extraction efficiency,” Appl. Phys. Lett.89(6), 063509 (2006). [CrossRef]
- N.-M. Park, C.-J. Choi, T.-Y. Seong, and S.-J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett.86(7), 1355–1357 (2001). [CrossRef] [PubMed]
- B.-H. Kim, C.-H. Cho, J.-S. Mun, M.-K. Kwon, T.-Y. Park, J.-S. Kim, C.-C. Byeon, J. Lee, and S.-J. Park, “Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons,” Adv. Mater. (Deerfield Beach Fla.)20(16), 3100–3104 (2008). [CrossRef]
- B.-H. Kim, C.-H. Cho, S.-J. Park, N.-M. Park, and G. Y. Sung, “Ni/Au contact to silicon quantum dot light-emitting diodes for the enhancement of carrier injection and light extraction efficiency,” Appl. Phys. Lett.89(6), 063509 (2006). [CrossRef]
- N.-M. Park, C.-J. Choi, T.-Y. Seong, and S.-J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett.86(7), 1355–1357 (2001). [CrossRef] [PubMed]
- B.-H. Kim, C.-H. Cho, J.-S. Mun, M.-K. Kwon, T.-Y. Park, J.-S. Kim, C.-C. Byeon, J. Lee, and S.-J. Park, “Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons,” Adv. Mater. (Deerfield Beach Fla.)20(16), 3100–3104 (2008). [CrossRef]
- M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNX film. II. Defect states electroluminescence,” J. Appl. Phys.104(8), 083505 (2008). [CrossRef]
- E. Jacques, L. Pichon, O. Debieu, and F. Gourbilleau, “Electrical behavior of MIS devices based on silicon nanoclusters embedded in SiOxNy and SiO2 films,” Nanoscale Res. Lett.6(1), 170 (2011). [CrossRef] [PubMed]
- J. Robertson and M. J. Powell, “Gap states in silicon-nitride,” Appl. Phys. Lett.44(4), 415–417 (1984). [CrossRef]
- F. Wang, D. Li, D. Yang, and D. Que, “Enhancement of light-extraction efficiency of SiNx light emitting devices through a rough Ag island film,” Appl. Phys. Lett.100(3), 031113 (2012). [CrossRef]
- J. Robertson and M. J. Powell, “Gap states in silicon-nitride,” Appl. Phys. Lett.44(4), 415–417 (1984). [CrossRef]
- J. R. Sheats, H. Antoniadis, M. Hueschen, W. Leonard, J. Miller, R. Moon, D. Roitman, and A. Stocking, “Organic electroluminescent devices,” Science273(5277), 884–888 (1996). [CrossRef] [PubMed]
- N.-M. Park, C.-J. Choi, T.-Y. Seong, and S.-J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett.86(7), 1355–1357 (2001). [CrossRef] [PubMed]
- J. R. Sheats, H. Antoniadis, M. Hueschen, W. Leonard, J. Miller, R. Moon, D. Roitman, and A. Stocking, “Organic electroluminescent devices,” Science273(5277), 884–888 (1996). [CrossRef] [PubMed]
- T. Shirasawa, K. Hayashi, S. Mizuno, S. Tanaka, K. Nakatsuji, F. Komori, and H. Tochihara, “Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface,” Phys. Rev. Lett.98(13), 136105 (2007). [CrossRef] [PubMed]
- J. R. Sheats, H. Antoniadis, M. Hueschen, W. Leonard, J. Miller, R. Moon, D. Roitman, and A. Stocking, “Organic electroluminescent devices,” Science273(5277), 884–888 (1996). [CrossRef] [PubMed]
- C. Huh, K.-H. Kim, B. K. Kim, W. Kim, H. Ko, C.-J. Choi, and G. Y. Sung, “Enhancement in light emission efficiency of a silicon nanocrystal light-emitting diode by multiple-luminescent structures,” Adv. Mater. (Deerfield Beach Fla.)22(44), 5058–5062 (2010). [CrossRef] [PubMed]
- B.-H. Kim, C.-H. Cho, S.-J. Park, N.-M. Park, and G. Y. Sung, “Ni/Au contact to silicon quantum dot light-emitting diodes for the enhancement of carrier injection and light extraction efficiency,” Appl. Phys. Lett.89(6), 063509 (2006). [CrossRef]
- S. M. Sze, “Current transport and maximum dielectric strength of silicon nitride,” J. Appl. Phys.38(7), 2951–2956 (1967). [CrossRef]
- T. Shirasawa, K. Hayashi, S. Mizuno, S. Tanaka, K. Nakatsuji, F. Komori, and H. Tochihara, “Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface,” Phys. Rev. Lett.98(13), 136105 (2007). [CrossRef] [PubMed]
- T. Shirasawa, K. Hayashi, S. Mizuno, S. Tanaka, K. Nakatsuji, F. Komori, and H. Tochihara, “Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface,” Phys. Rev. Lett.98(13), 136105 (2007). [CrossRef] [PubMed]
- T. Güngör and H. Tolunay, “Drift mobility measurements in a-SiNx: H,” J. Non-Cryst. Solids282(2–3), 197–202 (2001). [CrossRef]
- R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008). [CrossRef]
- F. Wang, D. Li, D. Yang, and D. Que, “Enhancement of light-extraction efficiency of SiNx light emitting devices through a rough Ag island film,” Appl. Phys. Lett.100(3), 031113 (2012). [CrossRef]
- M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNX film. II. Defect states electroluminescence,” J. Appl. Phys.104(8), 083505 (2008). [CrossRef]
- R. Huang, D. Q. Wang, H. L. Ding, X. Wang, K. J. Chen, J. Xu, Y. Q. Guo, J. Song, and Z. Y. Ma, “Enhanced electroluminescence from SiN-based multilayer structure by laser crystallization of ultrathin amorphous Si-rich SiN layers,” Opt. Express18(2), 1144–1150 (2010). [CrossRef] [PubMed]
- R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008). [CrossRef]
- J. Warga, R. Li, S. N. Basu, and L. Dal Negro, “Electroluminescence from silicon-rich nitride/silicon superlattice structures,” Appl. Phys. Lett.93(15), 151116 (2008). [CrossRef]
- A. A. Middleton and N. S. Wingreen, “Collective transport in arrays of small metallic dots,” Phys. Rev. Lett.71(19), 3198–3201 (1993). [CrossRef] [PubMed]
- Z. H. Cen, T. P. Chen, L. Ding, Z. Liu, J. I. Wong, M. Yang, W. P. Goh, and S. Fung, “Influence of implantation dose on electroluminescence from Si-implanted silicon nitride thin films,” Appl. Phys., A Mater. Sci. Process.104(1), 239–245 (2011). [CrossRef]
- Z. H. Cen, T. P. Chen, Z. Liu, Y. Liu, L. Ding, M. Yang, J. I. Wong, S. F. Yu, and W. P. Goh, “Electrically tunable white-color electroluminescence from Si-implanted silicon nitride thin film,” Opt. Express18(19), 20439–20444 (2010). [CrossRef] [PubMed]
- Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009). [CrossRef]
- R. Huang, D. Q. Wang, H. L. Ding, X. Wang, K. J. Chen, J. Xu, Y. Q. Guo, J. Song, and Z. Y. Ma, “Enhanced electroluminescence from SiN-based multilayer structure by laser crystallization of ultrathin amorphous Si-rich SiN layers,” Opt. Express18(2), 1144–1150 (2010). [CrossRef] [PubMed]
- R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008). [CrossRef]
- F. Wang, D. Li, D. Yang, and D. Que, “Enhancement of light-extraction efficiency of SiNx light emitting devices through a rough Ag island film,” Appl. Phys. Lett.100(3), 031113 (2012). [CrossRef]
- D. Li, J. Huang, and D. Yang, “Enhanced electroluminescence of silicon-rich silicon nitride light-emitting devices by NH3 plasma and annealing treatment,” Physica E41(6), 920–922 (2009). [CrossRef]
- M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNX film. II. Defect states electroluminescence,” J. Appl. Phys.104(8), 083505 (2008). [CrossRef]
- P. Cheng, D. Li, and D. Yang, “Influence of substrates in ZnO devices on the surface plasmon enhanced light emission,” Opt. Express16(12), 8896–8901 (2008). [CrossRef] [PubMed]
- Z. H. Cen, T. P. Chen, L. Ding, Z. Liu, J. I. Wong, M. Yang, W. P. Goh, and S. Fung, “Influence of implantation dose on electroluminescence from Si-implanted silicon nitride thin films,” Appl. Phys., A Mater. Sci. Process.104(1), 239–245 (2011). [CrossRef]
- Z. H. Cen, T. P. Chen, Z. Liu, Y. Liu, L. Ding, M. Yang, J. I. Wong, S. F. Yu, and W. P. Goh, “Electrically tunable white-color electroluminescence from Si-implanted silicon nitride thin film,” Opt. Express18(19), 20439–20444 (2010). [CrossRef] [PubMed]
- Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009). [CrossRef]
- Y. Yonamoto, Y. Inaba, and N. Akamatsu, “Compositional dependence of trap density and origin in thin silicon oxynitride film investigated using spin dependent Poole–Frenkel current,” Appl. Phys. Lett.98(23), 232905 (2011). [CrossRef]
- M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNX film. II. Defect states electroluminescence,” J. Appl. Phys.104(8), 083505 (2008). [CrossRef]
- Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009). [CrossRef]
Adv. Mater. (Deerfield Beach Fla.)
- C. Huh, K.-H. Kim, B. K. Kim, W. Kim, H. Ko, C.-J. Choi, and G. Y. Sung, “Enhancement in light emission efficiency of a silicon nanocrystal light-emitting diode by multiple-luminescent structures,” Adv. Mater. (Deerfield Beach Fla.)22(44), 5058–5062 (2010). [CrossRef] [PubMed]
- B.-H. Kim, C.-H. Cho, J.-S. Mun, M.-K. Kwon, T.-Y. Park, J.-S. Kim, C.-C. Byeon, J. Lee, and S.-J. Park, “Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons,” Adv. Mater. (Deerfield Beach Fla.)20(16), 3100–3104 (2008). [CrossRef]
Appl. Phys. Lett.
- Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009). [CrossRef]
- F. Wang, D. Li, D. Yang, and D. Que, “Enhancement of light-extraction efficiency of SiNx light emitting devices through a rough Ag island film,” Appl. Phys. Lett.100(3), 031113 (2012). [CrossRef]
- B.-H. Kim, C.-H. Cho, S.-J. Park, N.-M. Park, and G. Y. Sung, “Ni/Au contact to silicon quantum dot light-emitting diodes for the enhancement of carrier injection and light extraction efficiency,” Appl. Phys. Lett.89(6), 063509 (2006). [CrossRef]
- J. Warga, R. Li, S. N. Basu, and L. Dal Negro, “Electroluminescence from silicon-rich nitride/silicon superlattice structures,” Appl. Phys. Lett.93(15), 151116 (2008). [CrossRef]
- R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008). [CrossRef]
- G.-R. Lin, Y.-H. Pai, C.-T. Lin, and C.-C. Chen, “Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes,” Appl. Phys. Lett.96(26), 263514 (2010). [CrossRef]
- Y. Yonamoto, Y. Inaba, and N. Akamatsu, “Compositional dependence of trap density and origin in thin silicon oxynitride film investigated using spin dependent Poole–Frenkel current,” Appl. Phys. Lett.98(23), 232905 (2011). [CrossRef]
- W. Chandra and L. K. Ang, “Space charge limited current in a gap combined of free space and solid,” Appl. Phys. Lett.96(18), 183501 (2010). [CrossRef]
- J. Robertson and M. J. Powell, “Gap states in silicon-nitride,” Appl. Phys. Lett.44(4), 415–417 (1984). [CrossRef]
Appl. Phys., A Mater. Sci. Process.
- Z. H. Cen, T. P. Chen, L. Ding, Z. Liu, J. I. Wong, M. Yang, W. P. Goh, and S. Fung, “Influence of implantation dose on electroluminescence from Si-implanted silicon nitride thin films,” Appl. Phys., A Mater. Sci. Process.104(1), 239–245 (2011). [CrossRef]
J. Appl. Phys.
- M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNX film. II. Defect states electroluminescence,” J. Appl. Phys.104(8), 083505 (2008). [CrossRef]
- S. M. Sze, “Current transport and maximum dielectric strength of silicon nitride,” J. Appl. Phys.38(7), 2951–2956 (1967). [CrossRef]
J. Non-Cryst. Solids
- T. Güngör and H. Tolunay, “Drift mobility measurements in a-SiNx: H,” J. Non-Cryst. Solids282(2–3), 197–202 (2001). [CrossRef]
Nanoscale Res. Lett.
- E. Jacques, L. Pichon, O. Debieu, and F. Gourbilleau, “Electrical behavior of MIS devices based on silicon nanoclusters embedded in SiOxNy and SiO2 films,” Nanoscale Res. Lett.6(1), 170 (2011). [CrossRef] [PubMed]
Nature
- W. L. Barnes, A. Dereux, and T. W. Ebbesen, “Surface plasmon subwavelength optics,” Nature424(6950), 824–830 (2003). [CrossRef] [PubMed]
Opt. Express
- P. Cheng, D. Li, and D. Yang, “Influence of substrates in ZnO devices on the surface plasmon enhanced light emission,” Opt. Express16(12), 8896–8901 (2008). [CrossRef] [PubMed]
- Z. H. Cen, T. P. Chen, Z. Liu, Y. Liu, L. Ding, M. Yang, J. I. Wong, S. F. Yu, and W. P. Goh, “Electrically tunable white-color electroluminescence from Si-implanted silicon nitride thin film,” Opt. Express18(19), 20439–20444 (2010). [CrossRef] [PubMed]
- R. Huang, D. Q. Wang, H. L. Ding, X. Wang, K. J. Chen, J. Xu, Y. Q. Guo, J. Song, and Z. Y. Ma, “Enhanced electroluminescence from SiN-based multilayer structure by laser crystallization of ultrathin amorphous Si-rich SiN layers,” Opt. Express18(2), 1144–1150 (2010). [CrossRef] [PubMed]
Phys. Rev. Lett.
- N.-M. Park, C.-J. Choi, T.-Y. Seong, and S.-J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett.86(7), 1355–1357 (2001). [CrossRef] [PubMed]
- T. Shirasawa, K. Hayashi, S. Mizuno, S. Tanaka, K. Nakatsuji, F. Komori, and H. Tochihara, “Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface,” Phys. Rev. Lett.98(13), 136105 (2007). [CrossRef] [PubMed]
- A. A. Middleton and N. S. Wingreen, “Collective transport in arrays of small metallic dots,” Phys. Rev. Lett.71(19), 3198–3201 (1993). [CrossRef] [PubMed]
Physica E
- D. Li, J. Huang, and D. Yang, “Enhanced electroluminescence of silicon-rich silicon nitride light-emitting devices by NH3 plasma and annealing treatment,” Physica E41(6), 920–922 (2009). [CrossRef]
Science
- J. R. Sheats, H. Antoniadis, M. Hueschen, W. Leonard, J. Miller, R. Moon, D. Roitman, and A. Stocking, “Organic electroluminescent devices,” Science273(5277), 884–888 (1996). [CrossRef] [PubMed]
Other
- D. A. Neamen, Semiconductor Physics and Devices: Basic Principles, 3rd ed. (McGraw-Hill, 2003).
2012, Wang, Appl. Phys. Lett.
- F. Wang, D. Li, D. Yang, and D. Que, “Enhancement of light-extraction efficiency of SiNx light emitting devices through a rough Ag island film,” Appl. Phys. Lett.100(3), 031113 (2012). [CrossRef]
- E. Jacques, L. Pichon, O. Debieu, and F. Gourbilleau, “Electrical behavior of MIS devices based on silicon nanoclusters embedded in SiOxNy and SiO2 films,” Nanoscale Res. Lett.6(1), 170 (2011). [CrossRef] [PubMed]
- Y. Yonamoto, Y. Inaba, and N. Akamatsu, “Compositional dependence of trap density and origin in thin silicon oxynitride film investigated using spin dependent Poole–Frenkel current,” Appl. Phys. Lett.98(23), 232905 (2011). [CrossRef]
- Z. H. Cen, T. P. Chen, L. Ding, Z. Liu, J. I. Wong, M. Yang, W. P. Goh, and S. Fung, “Influence of implantation dose on electroluminescence from Si-implanted silicon nitride thin films,” Appl. Phys., A Mater. Sci. Process.104(1), 239–245 (2011). [CrossRef]
- W. Chandra and L. K. Ang, “Space charge limited current in a gap combined of free space and solid,” Appl. Phys. Lett.96(18), 183501 (2010). [CrossRef]
- G.-R. Lin, Y.-H. Pai, C.-T. Lin, and C.-C. Chen, “Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes,” Appl. Phys. Lett.96(26), 263514 (2010). [CrossRef]
- C. Huh, K.-H. Kim, B. K. Kim, W. Kim, H. Ko, C.-J. Choi, and G. Y. Sung, “Enhancement in light emission efficiency of a silicon nanocrystal light-emitting diode by multiple-luminescent structures,” Adv. Mater. (Deerfield Beach Fla.)22(44), 5058–5062 (2010). [CrossRef] [PubMed]
- D. Li, J. Huang, and D. Yang, “Enhanced electroluminescence of silicon-rich silicon nitride light-emitting devices by NH3 plasma and annealing treatment,” Physica E41(6), 920–922 (2009). [CrossRef]
- Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009). [CrossRef]
- J. Warga, R. Li, S. N. Basu, and L. Dal Negro, “Electroluminescence from silicon-rich nitride/silicon superlattice structures,” Appl. Phys. Lett.93(15), 151116 (2008). [CrossRef]
- B.-H. Kim, C.-H. Cho, J.-S. Mun, M.-K. Kwon, T.-Y. Park, J.-S. Kim, C.-C. Byeon, J. Lee, and S.-J. Park, “Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons,” Adv. Mater. (Deerfield Beach Fla.)20(16), 3100–3104 (2008). [CrossRef]
- M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNX film. II. Defect states electroluminescence,” J. Appl. Phys.104(8), 083505 (2008). [CrossRef]
- R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008). [CrossRef]
- T. Shirasawa, K. Hayashi, S. Mizuno, S. Tanaka, K. Nakatsuji, F. Komori, and H. Tochihara, “Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface,” Phys. Rev. Lett.98(13), 136105 (2007). [CrossRef] [PubMed]
- B.-H. Kim, C.-H. Cho, S.-J. Park, N.-M. Park, and G. Y. Sung, “Ni/Au contact to silicon quantum dot light-emitting diodes for the enhancement of carrier injection and light extraction efficiency,” Appl. Phys. Lett.89(6), 063509 (2006). [CrossRef]
- W. L. Barnes, A. Dereux, and T. W. Ebbesen, “Surface plasmon subwavelength optics,” Nature424(6950), 824–830 (2003). [CrossRef] [PubMed]
- N.-M. Park, C.-J. Choi, T.-Y. Seong, and S.-J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett.86(7), 1355–1357 (2001). [CrossRef] [PubMed]
- T. Güngör and H. Tolunay, “Drift mobility measurements in a-SiNx: H,” J. Non-Cryst. Solids282(2–3), 197–202 (2001). [CrossRef]
- J. R. Sheats, H. Antoniadis, M. Hueschen, W. Leonard, J. Miller, R. Moon, D. Roitman, and A. Stocking, “Organic electroluminescent devices,” Science273(5277), 884–888 (1996). [CrossRef] [PubMed]
- A. A. Middleton and N. S. Wingreen, “Collective transport in arrays of small metallic dots,” Phys. Rev. Lett.71(19), 3198–3201 (1993). [CrossRef] [PubMed]
- J. Robertson and M. J. Powell, “Gap states in silicon-nitride,” Appl. Phys. Lett.44(4), 415–417 (1984). [CrossRef]
- S. M. Sze, “Current transport and maximum dielectric strength of silicon nitride,” J. Appl. Phys.38(7), 2951–2956 (1967). [CrossRef]
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