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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 16 — Jul. 30, 2012
  • pp: 17952–17961

Polarization dependent light extraction of a GaN light emitting diode using dark field angle-resolved photoluminescence spectrometry

Chih-Ming Wang, Sheng-Han Tu, Ta-Ko Juan, Sheng-Fu Lin, and Jenq-Yang Chang  »View Author Affiliations


Optics Express, Vol. 20, Issue 16, pp. 17952-17961 (2012)
http://dx.doi.org/10.1364/OE.20.017952


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Abstract

In this paper, the polarization dependent optical properties of GaN surface relief grating are investigated using dark field angle-resolved photoluminescence (ARPL) spectrometer. The light extraction efficiency with the transverse electric (TE) and transverse magnetic (TM) pumping source represents a TE polarized dominated property. It is found that the TE and TM waveguide modes cannot be simultaneously coupled out, therefore light extraction is polarization dependent. The ARPL spectrum also reveals that the extraction efficiency is relatively high as the dispersion line of the waveguide mode is coincident with the folded free-photon dispersion of the 1D GaN grating.

© 2012 OSA

OCIS Codes
(050.1940) Diffraction and gratings : Diffraction
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Optical Devices

History
Original Manuscript: April 5, 2012
Revised Manuscript: June 11, 2012
Manuscript Accepted: July 17, 2012
Published: July 23, 2012

Citation
Chih-Ming Wang, Sheng-Han Tu, Ta-Ko Juan, Sheng-Fu Lin, and Jenq-Yang Chang, "Polarization dependent light extraction of a GaN light emitting diode using dark field angle-resolved photoluminescence spectrometry," Opt. Express 20, 17952-17961 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-16-17952


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References

  1. J. Q. Xi, H. Luo, A. J. Pasquale, J. K. Kim, and E. F. Schubert, “Enhanced light extraction in GaInN light-emitting diode with pyramid reflector,” IEEE Photon. Technol. Lett.18(22), 2347–2349 (2006). [CrossRef]
  2. C. F. Lin, Z.-J. Yang, B.-H. Chin, J. H. Zheng, J.-J. Dai, B.-C. Shieh, and C.-C. Chang, “Enhanced light output power in InGaN light-emitting diodes by fabricating inclined undercut structure,” J. Electrochem. Soc.153(12), G1020–G1024 (2006). [CrossRef]
  3. J. H. Lee, J. T. Oh, Y. C. Kim, and J. H. Lee, “Stress reduction and enhanced extraction efficiency of GaN-based LED grown on cone-shape-patterned sapphire,” IEEE Photon. Technol. Lett.20(18), 1563–1565 (2008). [CrossRef]
  4. R.-M. Lin, Y.-C. Lu, S.-F. Yu, Y.-C. S. Wu, C.-H. Chiang, W.-C. Hsu, and S.-J. Chang, “Enhanced extraction and efficiency of blue light-emitting diodes prepared using two-step-etched patterned sapphire substrates,” J. Electrochem. Soc.156(11), H874–H876 (2009). [CrossRef]
  5. J. B. Kim, S. M. Kim, Y. W. Kim, S. K. Kang, S. R. Jeon, N. Hwang, Y. J. Choi, and C. S. Chung, “Light extraction enhancement of GaN-based light-emitting diodes using volcano-shaped patterned sapphire substrates,” Jpn. J. Appl. Phys.49(4), 042102 (2010). [CrossRef]
  6. Y. C. Lee, C. Y. Chen, and Y. Y. Chou, “Fabrication of high-refractive-index microstructures and their applications to the efficiency improvement of GaN-based LEDs,” Opt. Express19(S6Suppl 6), A1231–A1236 (2011). [CrossRef] [PubMed]
  7. Y. C. Lee, M. J. Ciou, and J. S. Huang, “The influence of nanoimprinting surface structures on the optical efficiency of GaN-based LEDs,” IEEE Trans. NanoTechnol.10(3), 587–593 (2011). [CrossRef]
  8. E. Yablonovitch, “Inhibited spontaneous emission in solid-state physics and electronics,” Phys. Rev. Lett.58(20), 2059–2062 (1987). [CrossRef] [PubMed]
  9. J. D. Joannopoulos, P. R. Villeneuve, and S. Fan, “Photonic crystals: putting a new twist on light,” Nature386(6621), 143–149 (1997). [CrossRef]
  10. A. David, C. Meier, R. Sharma, F. S. Diana, S. P. DenBaars, E. Hu, S. Nakamura, C. Weisbuch, and H. Benisty, “Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction,” Appl. Phys. Lett.87(10), 101107 (2005). [CrossRef]
  11. A. David, H. Benisty, and C. Weisbuch, “Optimization of light-diffracting photonic-crystals for high extraction efficiency LEDs,” J. Disp. Technol.3(2), 133–148 (2007). [CrossRef]
  12. E. Matioli, E. Rangel, M. Iza, B. Fleury, N. Pfaff, J. Speck, E. Hu, and C. Weisbuch, “High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals,” Appl. Phys. Lett.96(3), 031108 (2010). [CrossRef]
  13. J. K. Kim, A. N. Noemaun, F. W. Mont, D. Meyaard, E. F. Schubert, D. J. Poxson, H. Kim, C. Sone, and Y. Park, “Elimination of total internal reflection in GaInN light-emitting diodes by graded-refractive-index micropillars,” Appl. Phys. Lett.93(22), 221111 (2008). [CrossRef]
  14. F. Ishida, K. Yoshimura, K. Hoshino, and K. Tadatomo, “Improved light extraction efficiency of GaN-based light emitting diodes by using needle-shape indium tin oxide p-contact,” Phys. Status Solidi C5(6), 2083–2085 (2008). [CrossRef]
  15. S. Ogawa, M. Imada, S. Yoshimoto, M. Okano, and S. Noda, “Control of light emission by 3D photonic crystals,” Science305(5681), 227–229 (2004). [CrossRef] [PubMed]
  16. S. Noda, M. Fujita, and T. Asano, “Spontaneous-emission control by photonic crystals and nanocavities,” Nat. Photonics1(8), 449–458 (2007). [CrossRef]
  17. S. Noda and M. Fujita, “Light-emitting diodes: photonic crystal efficiency boost,” Nat. Photonics3(3), 129–130 (2009). [CrossRef]
  18. J. J. Wierer, M. R. Krames, J. E. Epler, N. F. Gardner, M. G. Craford, J. R. Wendt, J. A. Simmons, and M. M. Sigalas, “InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures,” Appl. Phys. Lett.84(19), 3885–3887 (2004). [CrossRef]
  19. A. David, C. Meier, R. Sharma, F. S. Diana, S. P. DenBaars, E. Hu, S. Nakamura, C. Weisbuch, and H. Benisty, “Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction,” Appl. Phys. Lett.87(10), 101107 (2005). [CrossRef]
  20. E. Matioli and C. Weisbuch, “Impact of photonic crystals on LED light extraction efficiency: approaches and limits to vertical structure designs,” J. Phys. D Appl. Phys.43(35), 354005 (2010). [CrossRef]
  21. E. Matioli, B. Fleury, E. Rangel, T. Melo, E. Hu, J. S. Speck, and C. Weisbuch, “High extraction efficiency GaN-based photonic-crystal light-emitting diodes: comparison of extraction lengths between surface and embedded photonic crystals,” Appl. Phys. Express3(3), 032103 (2010). [CrossRef]
  22. E. Matioli, S. Brinkley, K. M. Kelchner, S. Nakamura, S. DenBaars, J. Speck, and C. Weisbuch, “Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals,” Appl. Phys. Lett.98(25), 251112 (2011). [CrossRef]
  23. J. W. Pan, S. H. Tu, W. S. Sun, C. M. Wang, and J. Y. Chang, “Integration of non-Lambertian LED and reflective optical element as efficient street lamp,” Opt. Express18(S2Suppl 2), A221–A230 (2010). [CrossRef] [PubMed]
  24. F. L. Pedrotti, S. J. L. M. Pedrotti, and L. S. Pedrotti, Introduction to Optics, 3rd ed. (Pearson Education, 2006).

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