Femtosecond laser-induced crystallization of amorphous Ga-Sb-Se films and coherent phonon dynamics

doi:10.1364/OE.20.018585

Femtosecond laser-induced crystallization of amorphous Ga-Sb-Se films and coherent phonon dynamics

Weiling Zhu, Yegang Lu, Simian Li, Zhitang Song, and Tianshu Lai »View Author Affiliations

Optics Express, Vol. 20, Issue 17, pp. 18585-18590 (2012)
http://dx.doi.org/10.1364/OE.20.018585

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Abstract

Femtosecond laser-irradiation-induced phase change of new environment friendly Te-free amorphous Ga-Sb-Se films is studied by coherent phonon spectroscopy. New coherent optical phonons (COP) occur when laser irradiation power reaches some threshold, implying laser-induced phase change taken place. Pump power dependence of COP dynamics reveals the phase change as crystallization and crystallization quality is comparable to one of annealing crystallization, showing application potential of Ga-Sb-Se films in optical phase change memory. The laser-irradiated crystallization of different component Ga-Sb-Se films is studied. It is found crystallization threshold power depends on Sb content, implying Sb-content control of the crystallization temperature of Ga-Sb-Se films.

OCIS Codes
(160.2900) Materials : Optical storage materials
(210.4770) Optical data storage : Optical recording
(300.6500) Spectroscopy : Spectroscopy, time-resolved
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors

ToC Category:
Materials

History
Original Manuscript: June 11, 2012
Revised Manuscript: July 11, 2012
Manuscript Accepted: July 20, 2012
Published: July 30, 2012

Citation
Weiling Zhu, Yegang Lu, Simian Li, Zhitang Song, and Tianshu Lai, "Femtosecond laser-induced crystallization of amorphous Ga-Sb-Se films and coherent phonon dynamics," Opt. Express 20, 18585-18590 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-17-18585

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References

Y. G. Lu, S. N. Song, Y. F. Gong, Z. T. Song, F. Rao, L. C. Wu, B. Liu, and D. N. Yao, “Ga-Sb-Se material for low-power phase change memory,” Appl. Phys. Lett.99(24), 243111 (2011). [CrossRef]
S. Fujimori, S. Yagi, H. Yamazaki, and N. Funakoshi, “Crystallization process of Sb-Te alloy films for optical storage,” J. Appl. Phys.64(3), 1000–1004 (1988). [CrossRef]
C. B. Peng, L. Cheng, and M. Mansuripur, “Experimental and theoretical investigations of laser-induced crystallization and amorphization in phase-change optical recording media,” J. Appl. Phys.82(9), 4183–4191 (1997). [CrossRef]
L. P. Shi, T. C. Chong, X. Hu, and H. B. Yao, “Study of the dynamic crystallization behavior of GeSbTe phase change optical disk,” Jpn. J. Appl. Phys.42(Part 1, No. 2B), 841–847 (2003). [CrossRef]
M. L. Tseng, B. H. Chen, C. H. Chu, C. M. Chang, W. C. Lin, N. N. Chu, M. Mansuripur, A. Q. Liu, and D. P. Tsai, “Fabrication of phase-change chalcogenide Ge2Sb2Te5 patterns by laser-induced forward transfer,” Opt. Express19(18), 16975–16984 (2011). [CrossRef] [PubMed]
W. L. Zhu, C. Z. Wang, M. C. Sun, S. M. Li, J. W. Zhai, and T. S. Lai, “Characterization of femtosecond laser-irradiation crystallization and structure of multiple periodic Si/Sb80Te20 nanocomposite films by coherent phonon spectroscopy,” Opt. Express19(23), 22684–22691 (2011). [CrossRef] [PubMed]
M. Först, T. Dekorsy, C. Trappe, M. Laurenzis, H. Kurz, and B. Béchevet, “Phase change in Ge2Sb2Te5 films investigated by coherent phonon spectroscopy,” Appl. Phys. Lett.77(13), 1964–1966 (2000). [CrossRef]
Y. W. Li, V. A. Stoica, L. Endicott, G. Y. Wang, C. Uher, and R. Clarke, “Coherent optical phonon spectroscopy studies of femtosecond-laser modified Sb2Te3 films,” Appl. Phys. Lett.97(17), 171908 (2010). [CrossRef]
Y. G. Wang, X. F. Xu, and R. Venkatasubramanian, “Reduction in coherent phonon lifetime in Bi2Te3/Sb2Te3 superlattices,” Appl. Phys. Lett.93(11), 113114 (2008). [CrossRef]
G. A. Garrett, T. F. Albrecht, J. F. Whitaker, and R. Merlin, “Coherent THz phonons driven by light pulses and the Sb problem: what is the mechanism?,” Phys. Rev. Lett.77(17), 3661–3664 (1996). [CrossRef] [PubMed]
H. J. Zeiger, J. Vidal, T. K. Cheng, E. P. Ippen, G. Dresselhaus, and M. S. Dresselhaus, “Theory for displacive excitation of coherent phonons,” Phys. Rev. B Condens. Matter45(2), 768–778 (1992). [CrossRef] [PubMed]
M. Hase, Y. Miyamoto, and J. Tominaga, “Ultrafast dephasing of coherent optical phonons in atomically controlled GeTe/Sb2Te3 superlattices,” Phys. Rev. B79(17), 174112 (2009). [CrossRef]
K. Ishioka, M. Kitajima, and O. V. Misochko, “Coherent A1g and Eg phonons of antimony,” J. Appl. Phys.103(12), 123505 (2008). [CrossRef]
L. van Pieterson, M. H. R. Lankhorst, M. van Schijndel, A. E. T. Kuiper, and J. H. J. Roosen, “Phase-change recording materials with a growth-dominated crystallization mechanism: a material review,” J. Appl. Phys.97(8), 083520 (2005). [CrossRef]
M. S. Youm, Y. T. Kim, Y. H. Kim, and M. Y. Sung, “Effects of excess Sb on crystallization of δ-phase SbTe binary thin films,” Phys. Status Solidi A205(7), 1636–1640 (2008). [CrossRef]
M. J. Kang, S. Y. Choi, D. Wamwangi, K. Wang, C. Steimer, and M. Wuttig, “Structural transformation of SbxSe100−x thin films for phase change nonvolatile memory applications,” J. Appl. Phys.98(1), 014904 (2005). [CrossRef]

Appl. Phys. Lett.

Y. G. Lu, S. N. Song, Y. F. Gong, Z. T. Song, F. Rao, L. C. Wu, B. Liu, and D. N. Yao, “Ga-Sb-Se material for low-power phase change memory,” Appl. Phys. Lett.99(24), 243111 (2011). [CrossRef]
M. Först, T. Dekorsy, C. Trappe, M. Laurenzis, H. Kurz, and B. Béchevet, “Phase change in Ge2Sb2Te5 films investigated by coherent phonon spectroscopy,” Appl. Phys. Lett.77(13), 1964–1966 (2000). [CrossRef]
Y. W. Li, V. A. Stoica, L. Endicott, G. Y. Wang, C. Uher, and R. Clarke, “Coherent optical phonon spectroscopy studies of femtosecond-laser modified Sb2Te3 films,” Appl. Phys. Lett.97(17), 171908 (2010). [CrossRef]
Y. G. Wang, X. F. Xu, and R. Venkatasubramanian, “Reduction in coherent phonon lifetime in Bi2Te3/Sb2Te3 superlattices,” Appl. Phys. Lett.93(11), 113114 (2008). [CrossRef]

J. Appl. Phys.

S. Fujimori, S. Yagi, H. Yamazaki, and N. Funakoshi, “Crystallization process of Sb-Te alloy films for optical storage,” J. Appl. Phys.64(3), 1000–1004 (1988). [CrossRef]
C. B. Peng, L. Cheng, and M. Mansuripur, “Experimental and theoretical investigations of laser-induced crystallization and amorphization in phase-change optical recording media,” J. Appl. Phys.82(9), 4183–4191 (1997). [CrossRef]
K. Ishioka, M. Kitajima, and O. V. Misochko, “Coherent A1g and Eg phonons of antimony,” J. Appl. Phys.103(12), 123505 (2008). [CrossRef]
L. van Pieterson, M. H. R. Lankhorst, M. van Schijndel, A. E. T. Kuiper, and J. H. J. Roosen, “Phase-change recording materials with a growth-dominated crystallization mechanism: a material review,” J. Appl. Phys.97(8), 083520 (2005). [CrossRef]
M. J. Kang, S. Y. Choi, D. Wamwangi, K. Wang, C. Steimer, and M. Wuttig, “Structural transformation of SbxSe100−x thin films for phase change nonvolatile memory applications,” J. Appl. Phys.98(1), 014904 (2005). [CrossRef]

Jpn. J. Appl. Phys.

L. P. Shi, T. C. Chong, X. Hu, and H. B. Yao, “Study of the dynamic crystallization behavior of GeSbTe phase change optical disk,” Jpn. J. Appl. Phys.42(Part 1, No. 2B), 841–847 (2003). [CrossRef]

Opt. Express

Phys. Rev. B

M. Hase, Y. Miyamoto, and J. Tominaga, “Ultrafast dephasing of coherent optical phonons in atomically controlled GeTe/Sb2Te3 superlattices,” Phys. Rev. B79(17), 174112 (2009). [CrossRef]

Phys. Rev. B Condens. Matter

H. J. Zeiger, J. Vidal, T. K. Cheng, E. P. Ippen, G. Dresselhaus, and M. S. Dresselhaus, “Theory for displacive excitation of coherent phonons,” Phys. Rev. B Condens. Matter45(2), 768–778 (1992). [CrossRef] [PubMed]

Phys. Rev. Lett.

G. A. Garrett, T. F. Albrecht, J. F. Whitaker, and R. Merlin, “Coherent THz phonons driven by light pulses and the Sb problem: what is the mechanism?,” Phys. Rev. Lett.77(17), 3661–3664 (1996). [CrossRef] [PubMed]

Phys. Status Solidi A

M. S. Youm, Y. T. Kim, Y. H. Kim, and M. Y. Sung, “Effects of excess Sb on crystallization of δ-phase SbTe binary thin films,” Phys. Status Solidi A205(7), 1636–1640 (2008). [CrossRef]

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[1] Y. G. Lu, S. N. Song, Y. F. Gong, Z. T. Song, F. Rao, L. C. Wu, B. Liu, and D. N. Yao, “Ga-Sb-Se material for low-power phase change memory,” Appl. Phys. Lett.99(24), 243111 (2011). [CrossRef]

[2] S. Fujimori, S. Yagi, H. Yamazaki, and N. Funakoshi, “Crystallization process of Sb-Te alloy films for optical storage,” J. Appl. Phys.64(3), 1000–1004 (1988). [CrossRef]

[3] C. B. Peng, L. Cheng, and M. Mansuripur, “Experimental and theoretical investigations of laser-induced crystallization and amorphization in phase-change optical recording media,” J. Appl. Phys.82(9), 4183–4191 (1997). [CrossRef]

[4] L. P. Shi, T. C. Chong, X. Hu, and H. B. Yao, “Study of the dynamic crystallization behavior of GeSbTe phase change optical disk,” Jpn. J. Appl. Phys.42(Part 1, No. 2B), 841–847 (2003). [CrossRef]

[5] M. L. Tseng, B. H. Chen, C. H. Chu, C. M. Chang, W. C. Lin, N. N. Chu, M. Mansuripur, A. Q. Liu, and D. P. Tsai, “Fabrication of phase-change chalcogenide Ge2Sb2Te5 patterns by laser-induced forward transfer,” Opt. Express19(18), 16975–16984 (2011). [CrossRef] [PubMed]

[6] W. L. Zhu, C. Z. Wang, M. C. Sun, S. M. Li, J. W. Zhai, and T. S. Lai, “Characterization of femtosecond laser-irradiation crystallization and structure of multiple periodic Si/Sb80Te20 nanocomposite films by coherent phonon spectroscopy,” Opt. Express19(23), 22684–22691 (2011). [CrossRef] [PubMed]

[7] M. Först, T. Dekorsy, C. Trappe, M. Laurenzis, H. Kurz, and B. Béchevet, “Phase change in Ge2Sb2Te5 films investigated by coherent phonon spectroscopy,” Appl. Phys. Lett.77(13), 1964–1966 (2000). [CrossRef]

[8] Y. W. Li, V. A. Stoica, L. Endicott, G. Y. Wang, C. Uher, and R. Clarke, “Coherent optical phonon spectroscopy studies of femtosecond-laser modified Sb2Te3 films,” Appl. Phys. Lett.97(17), 171908 (2010). [CrossRef]

[9] Y. G. Wang, X. F. Xu, and R. Venkatasubramanian, “Reduction in coherent phonon lifetime in Bi2Te3/Sb2Te3 superlattices,” Appl. Phys. Lett.93(11), 113114 (2008). [CrossRef]

[10] G. A. Garrett, T. F. Albrecht, J. F. Whitaker, and R. Merlin, “Coherent THz phonons driven by light pulses and the Sb problem: what is the mechanism?,” Phys. Rev. Lett.77(17), 3661–3664 (1996). [CrossRef] [PubMed]

[11] H. J. Zeiger, J. Vidal, T. K. Cheng, E. P. Ippen, G. Dresselhaus, and M. S. Dresselhaus, “Theory for displacive excitation of coherent phonons,” Phys. Rev. B Condens. Matter45(2), 768–778 (1992). [CrossRef] [PubMed]

[12] M. Hase, Y. Miyamoto, and J. Tominaga, “Ultrafast dephasing of coherent optical phonons in atomically controlled GeTe/Sb2Te3 superlattices,” Phys. Rev. B79(17), 174112 (2009). [CrossRef]

[13] K. Ishioka, M. Kitajima, and O. V. Misochko, “Coherent A1g and Eg phonons of antimony,” J. Appl. Phys.103(12), 123505 (2008). [CrossRef]

[14] L. van Pieterson, M. H. R. Lankhorst, M. van Schijndel, A. E. T. Kuiper, and J. H. J. Roosen, “Phase-change recording materials with a growth-dominated crystallization mechanism: a material review,” J. Appl. Phys.97(8), 083520 (2005). [CrossRef]

[15] M. S. Youm, Y. T. Kim, Y. H. Kim, and M. Y. Sung, “Effects of excess Sb on crystallization of δ-phase SbTe binary thin films,” Phys. Status Solidi A205(7), 1636–1640 (2008). [CrossRef]

[16] M. J. Kang, S. Y. Choi, D. Wamwangi, K. Wang, C. Steimer, and M. Wuttig, “Structural transformation of SbxSe100−x thin films for phase change nonvolatile memory applications,” J. Appl. Phys.98(1), 014904 (2005). [CrossRef]

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Femtosecond laser-induced crystallization of amorphous Ga-Sb-Se films and coherent phonon dynamics

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Abstract

References

Appl. Phys. Lett.

J. Appl. Phys.

Jpn. J. Appl. Phys.

Opt. Express

Phys. Rev. B

Phys. Rev. B Condens. Matter

Phys. Rev. Lett.

Phys. Status Solidi A

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