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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 18 — Aug. 27, 2012
  • pp: 20090–20095

170 GHz uni-traveling carrier photodiodes for
InP-based photonic integrated circuits

E. Rouvalis, M. Chtioui, F. van Dijk, F. Lelarge, M. J. Fice, C. C. Renaud, G. Carpintero, and A. J. Seeds  »View Author Affiliations


Optics Express, Vol. 20, Issue 18, pp. 20090-20095 (2012)
http://dx.doi.org/10.1364/OE.20.020090


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Abstract

We demonstrate the capability of fabricating extremely high-bandwidth Uni-Traveling Carrier Photodiodes (UTC-PDs) using techniques that are suitable for active-passive monolithic integration with Multiple Quantum Well (MQW)-based photonic devices. The devices achieved a responsivity of 0.27 A/W, a 3-dB bandwidth of 170 GHz, and an output power of −9 dBm at 200 GHz. We anticipate that this work will deliver Photonic Integrated Circuits with extremely high bandwidth for optical communications and millimetre-wave applications.

© 2012 OSA

OCIS Codes
(040.5160) Detectors : Photodetectors
(250.5300) Optoelectronics : Photonic integrated circuits
(060.5625) Fiber optics and optical communications : Radio frequency photonics

ToC Category:
Detectors

History
Original Manuscript: May 31, 2012
Revised Manuscript: August 10, 2012
Manuscript Accepted: August 12, 2012
Published: August 17, 2012

Citation
E. Rouvalis, M. Chtioui, F. van Dijk, F. Lelarge, M. J. Fice, C. C. Renaud, G. Carpintero, and A. J. Seeds, "170 GHz uni-traveling carrier photodiodes for
InP-based photonic integrated circuits," Opt. Express 20, 20090-20095 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-18-20090


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References

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