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Enhancement of light extraction in GaN-based light-emitting diodes using rough beveled ZnO nanocone arraysZhengmao Yin, Xiaoyan Liu, Yongzhong Wu, Xiaopeng Hao, and Xiangang Xu »View Author Affiliations
Zhengmao Yin,1
Xiaoyan Liu,1,2
Yongzhong Wu,1,3
Xiaopeng Hao,1,4
and Xiangang Xu1,2
1State Key Laboratory of Crystal Materials, Center of Bio & Micro/nano Functional Materials, Shandong University, 27 Shandanan Road, Jinan 250100, China 2ShanDong Inspur HuaGuang Optoelectronics CO., LTD, 1835 Tianchen Street, High-tech Zone, Jinan 250101, China 3wuyz@sdu.edu.cn 4xphao@sdu.edu.cn |
Optics Express, Vol. 20, Issue 2, pp. 1013-1021 (2012)
http://dx.doi.org/10.1364/OE.20.001013
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Abstract
A remarkable enhancement of light extraction efficiency in GaN-based blue light-emitting diodes (LEDs) with rough beveled ZnO nanocone arrays grown on the planar indium tin oxide (ITO) layer is reported. The light output power of LEDs with rough beveled ZnO nanocone arrays was increased by about 110% at 20 mA compared with conventional LEDs with planar ITO. The light extraction efficiency of GaN-based LEDs with rough-beveled ZnO nanocones is measured much greater than with smooth-surface hexagonal ZnO nanorods. The light-ray tracing analysis showed that ZnO nanocones with rough surfaces enlarge the light escape cone of GaN-based LEDs and have a greater advantage for extracting light compared with ZnO nanorods.
© 2012 OSA
OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(220.4241) Optical design and fabrication : Nanostructure fabrication
ToC Category:
Optical Devices
History
Original Manuscript: September 19, 2011
Revised Manuscript: December 9, 2011
Manuscript Accepted: December 13, 2011
Published: January 4, 2012
Citation
Zhengmao Yin, Xiaoyan Liu, Yongzhong Wu, Xiaopeng Hao, and Xiangang Xu, "Enhancement of light extraction in GaN-based light-emitting diodes using rough beveled ZnO nanocone arrays," Opt. Express 20, 1013-1021 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-2-1013
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- J. K. Kim, T. Gessmann, E. F. Schubert, J. Q. Xi, H. Luo, J. Cho, C. Sone, and Y. Park, “GaInN light-emitting diode with conductive omnidirectional reflector having a low-refractive-index indium-tin oxide layer,” Appl. Phys. Lett.88(1), 013501 (2006). [CrossRef]
- H. Park, K.-J. Byeon, K.-Y. Yang, J.-Y. Cho, and H. Lee, “The fabrication of a patterned ZnO nanorod array for high brightness LEDs,” Nanotechnology21(35), 355304 (2010). [CrossRef] [PubMed]
- J. Zhong, H. Chen, G. Saraf, Y. Lu, C. K. Choi, J. J. Song, D. M. Mackie, and H. Shen, “Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency,” Appl. Phys. Lett.90(20), 203515 (2007). [CrossRef]
- J.-W. Kang, M.-S. Oh, Y.-S. Choi, C.-Y. Cho, T.-Y. Park, C. W. Tu, and S.-J. Park, “Improved light extraction of GaN-based green light-emitting diodes with an antireflection layer of ZnO nanorod arrays,” Electrochem. Solid-State Lett.14(3), H120–H123 (2011). [CrossRef]
- J. J. Wierer, D. A. Steigerwald, M. R. Krames, J. J. O’Shea, M. J. Ludowise, G. Christenson, Y. C. Shen, C. Lowery, P. S. Martin, S. Subramanya, W. Götz, N. F. Gardner, R. S. Kern, and S. A. Stockman, “High-power AlGaInN flip-chip light-emitting diodes,” Appl. Phys. Lett.78(22), 3379 (2001). [CrossRef]
- C. B. Soh, C. B. Tay, S. J. Chua, H. Q. Le, N. S. S. Ang, and J. H. Teng, “Optimization of hydrothermal growth ZnO Nanorods for enhancement of light extraction from GaN blue LEDs,” J. Cryst. Growth312(11), 1848–1854 (2010). [CrossRef]
- Y.-C. Chao, C.-Y. Chen, C.-A. Lin, Y.-A. Dai, and J.-H. He, “Antireflection effect of ZnO nanorod arrays,” J. Mater. Chem.20(37), 8134–8138 (2010). [CrossRef]
- S. Dalui, C.-C. Lin, H.-Y. Lee, C.-H. Chao, and C.-T. Lee, “Light output enhancement of GaN-based light-emitting diodes using ZnO nanorod arrays produced by aqueous solution growth technique,” IEEE Photon. Technol. Lett.22(16), 1220–1222 (2010). [CrossRef]
- J. J. Wierer, A. David, and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nat. Photonics3(3), 163–169 (2009). [CrossRef]
- H. Masui, S. Nakamura, and S. P. DenBaars, “Analytical light-ray tracing in two-dimensional objects for light-extraction problems in light-emitting diodes,” Appl. Opt.47(1), 88–92 (2008). [CrossRef] [PubMed]
- Y. Gao, T. Fujii, R. Sharma, K. Fujito, S. P. Denbaars, S. Nakamura, and E. L. Hu, “Roughening hexagonal surface morphology on laser lift-off (LLO) n-face GaN with simple photo-enhanced chemical wet etching,” Jpn. J. Appl. Phys.43(No. 5A), L637–L639 (2004). [CrossRef]
- Y. Gao, T. Fujii, R. Sharma, K. Fujito, S. P. Denbaars, S. Nakamura, and E. L. Hu, “Roughening hexagonal surface morphology on laser lift-off (LLO) n-face GaN with simple photo-enhanced chemical wet etching,” Jpn. J. Appl. Phys.43(No. 5A), L637–L639 (2004). [CrossRef]
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- J.-W. Kang, M.-S. Oh, Y.-S. Choi, C.-Y. Cho, T.-Y. Park, C. W. Tu, and S.-J. Park, “Improved light extraction of GaN-based green light-emitting diodes with an antireflection layer of ZnO nanorod arrays,” Electrochem. Solid-State Lett.14(3), H120–H123 (2011). [CrossRef]
- K.-K. Kim, S.- Lee, H. Kim, J.-C. Park, S.-N. Lee, Y. Park, S.-J. Park, and S.-W. Kim, “Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution,” Appl. Phys. Lett.94(7), 071118 (2009). [CrossRef]
- K.-K. Kim, S.- Lee, H. Kim, J.-C. Park, S.-N. Lee, Y. Park, S.-J. Park, and S.-W. Kim, “Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution,” Appl. Phys. Lett.94(7), 071118 (2009). [CrossRef]
- M.-K. Kwon, J.-Y. Kim, I.-K. Park, K. S. Kim, G.-Y. Jung, S.-J. Park, J. W. Kim, and Y. C. Kim, “Enhanced emission efficiency of GaN/InGaN multiple quantum well light-emitting diode with an embedded photonic crystal,” Appl. Phys. Lett.92(25), 251110 (2008). [CrossRef]
- J.-W. Kang, M.-S. Oh, Y.-S. Choi, C.-Y. Cho, T.-Y. Park, C. W. Tu, and S.-J. Park, “Improved light extraction of GaN-based green light-emitting diodes with an antireflection layer of ZnO nanorod arrays,” Electrochem. Solid-State Lett.14(3), H120–H123 (2011). [CrossRef]
- K.-K. Kim, S.- Lee, H. Kim, J.-C. Park, S.-N. Lee, Y. Park, S.-J. Park, and S.-W. Kim, “Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution,” Appl. Phys. Lett.94(7), 071118 (2009). [CrossRef]
- K.-K. Kim, S.- Lee, H. Kim, J.-C. Park, S.-N. Lee, Y. Park, S.-J. Park, and S.-W. Kim, “Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution,” Appl. Phys. Lett.94(7), 071118 (2009). [CrossRef]
- J. K. Kim, T. Gessmann, E. F. Schubert, J. Q. Xi, H. Luo, J. Cho, C. Sone, and Y. Park, “GaInN light-emitting diode with conductive omnidirectional reflector having a low-refractive-index indium-tin oxide layer,” Appl. Phys. Lett.88(1), 013501 (2006). [CrossRef]
- B. S. Kang, S. J. Pearton, and F. Ren, “Low temperature (<100°C) patterned growth of ZnO nanorod arrays on Si,” Appl. Phys. Lett.90(8), 083104 (2007). [CrossRef]
- C. H. Kuo, C. M. Chen, C. W. Kuo, C. J. Tun, C. J. Pan, B. J. Pong, and G. C. Chi, “Improvement of near-ultraviolet nitride-based light emitting diodes with mesh indium tin oxide contact layers,” Appl. Phys. Lett.89(20), 201104 (2006). [CrossRef]
- B. S. Kang, S. J. Pearton, and F. Ren, “Low temperature (<100°C) patterned growth of ZnO nanorod arrays on Si,” Appl. Phys. Lett.90(8), 083104 (2007). [CrossRef]
- P. Uthirakumar, B. D. Ryu, J. H. Kang, H. G. Kim, J. H. Ryu, and C.-H. Hong, “Impact of layer thickness and light transmission of ZnO nanomaterials on GaN-based light emitting diodes,” Vacuum85(2), 198–202 (2010). [CrossRef]
- P. Uthirakumar, B. D. Ryu, J. H. Kang, H. G. Kim, J. H. Ryu, and C.-H. Hong, “Impact of layer thickness and light transmission of ZnO nanomaterials on GaN-based light emitting diodes,” Vacuum85(2), 198–202 (2010). [CrossRef]
- J. Zhong, H. Chen, G. Saraf, Y. Lu, C. K. Choi, J. J. Song, D. M. Mackie, and H. Shen, “Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency,” Appl. Phys. Lett.90(20), 203515 (2007). [CrossRef]
- I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Gmitter, and A. Scherer, “30% external quantum efficiency from surface textured thin-film light-emitting diodes,” Appl. Phys. Lett.63(16), 2174 (1993). [CrossRef]
- I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Gmitter, and A. Scherer, “30% external quantum efficiency from surface textured thin-film light-emitting diodes,” Appl. Phys. Lett.63(16), 2174 (1993). [CrossRef]
- J. K. Kim, T. Gessmann, E. F. Schubert, J. Q. Xi, H. Luo, J. Cho, C. Sone, and Y. Park, “GaInN light-emitting diode with conductive omnidirectional reflector having a low-refractive-index indium-tin oxide layer,” Appl. Phys. Lett.88(1), 013501 (2006). [CrossRef]
- E. F. Schubert and J. K. Kim, “Solid-state light sources getting smart,” Science308(5726), 1274–1278 (2005). [CrossRef] [PubMed]
- Y. Gao, T. Fujii, R. Sharma, K. Fujito, S. P. Denbaars, S. Nakamura, and E. L. Hu, “Roughening hexagonal surface morphology on laser lift-off (LLO) n-face GaN with simple photo-enhanced chemical wet etching,” Jpn. J. Appl. Phys.43(No. 5A), L637–L639 (2004). [CrossRef]
- J. K. Sheu, I. H. Hung, W. C. Lai, S. C. Shei, and M. L. Lee, “Enhancement in output power of blue gallium nitride-based light-emitting diodes with omnidirectional metal reflector under electrode pads,” Appl. Phys. Lett.93(10), 103507 (2008). [CrossRef]
- S. J. Chang, C. F. Shen, W. S. Chen, C. T. Kuo, T. K. Ko, S. C. Shei, and J. K. Sheu, “Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography,” Appl. Phys. Lett.91(1), 013504 (2007). [CrossRef]
- S. J. Chang, C. F. Shen, W. S. Chen, C. T. Kuo, T. K. Ko, S. C. Shei, and J. K. Sheu, “Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography,” Appl. Phys. Lett.91(1), 013504 (2007). [CrossRef]
- J. Zhong, H. Chen, G. Saraf, Y. Lu, C. K. Choi, J. J. Song, D. M. Mackie, and H. Shen, “Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency,” Appl. Phys. Lett.90(20), 203515 (2007). [CrossRef]
- J. J. Wierer, D. A. Steigerwald, M. R. Krames, J. J. O’Shea, M. J. Ludowise, G. Christenson, Y. C. Shen, C. Lowery, P. S. Martin, S. Subramanya, W. Götz, N. F. Gardner, R. S. Kern, and S. A. Stockman, “High-power AlGaInN flip-chip light-emitting diodes,” Appl. Phys. Lett.78(22), 3379 (2001). [CrossRef]
- J. K. Sheu, I. H. Hung, W. C. Lai, S. C. Shei, and M. L. Lee, “Enhancement in output power of blue gallium nitride-based light-emitting diodes with omnidirectional metal reflector under electrode pads,” Appl. Phys. Lett.93(10), 103507 (2008). [CrossRef]
- S. J. Chang, C. F. Shen, W. S. Chen, C. T. Kuo, T. K. Ko, S. C. Shei, and J. K. Sheu, “Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography,” Appl. Phys. Lett.91(1), 013504 (2007). [CrossRef]
- C. B. Soh, C. B. Tay, S. J. Chua, H. Q. Le, N. S. S. Ang, and J. H. Teng, “Optimization of hydrothermal growth ZnO Nanorods for enhancement of light extraction from GaN blue LEDs,” J. Cryst. Growth312(11), 1848–1854 (2010). [CrossRef]
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- J. Zhong, H. Chen, G. Saraf, Y. Lu, C. K. Choi, J. J. Song, D. M. Mackie, and H. Shen, “Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency,” Appl. Phys. Lett.90(20), 203515 (2007). [CrossRef]
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- J. J. Wierer, D. A. Steigerwald, M. R. Krames, J. J. O’Shea, M. J. Ludowise, G. Christenson, Y. C. Shen, C. Lowery, P. S. Martin, S. Subramanya, W. Götz, N. F. Gardner, R. S. Kern, and S. A. Stockman, “High-power AlGaInN flip-chip light-emitting diodes,” Appl. Phys. Lett.78(22), 3379 (2001). [CrossRef]
- J. J. Wierer, D. A. Steigerwald, M. R. Krames, J. J. O’Shea, M. J. Ludowise, G. Christenson, Y. C. Shen, C. Lowery, P. S. Martin, S. Subramanya, W. Götz, N. F. Gardner, R. S. Kern, and S. A. Stockman, “High-power AlGaInN flip-chip light-emitting diodes,” Appl. Phys. Lett.78(22), 3379 (2001). [CrossRef]
- C. B. Soh, C. B. Tay, S. J. Chua, H. Q. Le, N. S. S. Ang, and J. H. Teng, “Optimization of hydrothermal growth ZnO Nanorods for enhancement of light extraction from GaN blue LEDs,” J. Cryst. Growth312(11), 1848–1854 (2010). [CrossRef]
- C. B. Soh, C. B. Tay, S. J. Chua, H. Q. Le, N. S. S. Ang, and J. H. Teng, “Optimization of hydrothermal growth ZnO Nanorods for enhancement of light extraction from GaN blue LEDs,” J. Cryst. Growth312(11), 1848–1854 (2010). [CrossRef]
- J.-W. Kang, M.-S. Oh, Y.-S. Choi, C.-Y. Cho, T.-Y. Park, C. W. Tu, and S.-J. Park, “Improved light extraction of GaN-based green light-emitting diodes with an antireflection layer of ZnO nanorod arrays,” Electrochem. Solid-State Lett.14(3), H120–H123 (2011). [CrossRef]
- C. H. Kuo, C. M. Chen, C. W. Kuo, C. J. Tun, C. J. Pan, B. J. Pong, and G. C. Chi, “Improvement of near-ultraviolet nitride-based light emitting diodes with mesh indium tin oxide contact layers,” Appl. Phys. Lett.89(20), 201104 (2006). [CrossRef]
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- H. Park, K.-J. Byeon, K.-Y. Yang, J.-Y. Cho, and H. Lee, “The fabrication of a patterned ZnO nanorod array for high brightness LEDs,” Nanotechnology21(35), 355304 (2010). [CrossRef] [PubMed]
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Adv. Funct. Mater.
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- S. J. An, J. H. Chae, G.-C. Yi, and G. H. Park, “Enhanced light output of GaN-based light-emitting diodes with ZnO nanorod arrays,” Appl. Phys. Lett.92(12), 121108 (2008). [CrossRef]
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Electrochem. Solid-State Lett.
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IEEE Photon. Technol. Lett.
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J. Cryst. Growth
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J. Mater. Chem.
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Jpn. J. Appl. Phys.
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Nanotechnology
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Nat. Photonics
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Thin Solid Films
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Vacuum
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