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Zero-bias 40Gbit/s germanium waveguide photodetector on siliconLaurent Vivien, Andreas Polzer, Delphine Marris-Morini, Johann Osmond, Jean Michel Hartmann, Paul Crozat, Eric Cassan, Christophe Kopp, Horst Zimmermann, and Jean Marc Fédéli »View Author Affiliations
Laurent Vivien,1,*
Andreas Polzer,2
Delphine Marris-Morini,1
Johann Osmond,1
Jean Michel Hartmann,3
Paul Crozat,1
Eric Cassan,1
Christophe Kopp,3
Horst Zimmermann,2
and Jean Marc Fédéli3
1Institut d’Electronique Fondamentale (IEF), Univ. Paris-Sud, CNRS, Bât 220, F-91405 Orsay France 2Institute of Electrodynamics, Microwave and Circuit Engineering, Vienna University of Technology, Gusshausstrasse 25/354, 1040 Vienna, Austria 3CEA, LETI, Minatec Campus, 17 rue des Martyrs, F-38054 Grenoble, France *Corresponding author: laurent.vivien@u-psud.fr |
Optics Express, Vol. 20, Issue 2, pp. 1096-1101 (2012)
http://dx.doi.org/10.1364/OE.20.001096
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Abstract
We report on lateral pin germanium photodetectors selectively grown at the end of silicon waveguides. A very high optical bandwidth, estimated up to 120GHz, was evidenced in 10 µm long Ge photodetectors using three kinds of experimental set-ups. In addition, a responsivity of 0.8 A/W at 1550 nm was measured. An open eye diagrams at 40Gb/s were demonstrated under zero-bias at a wavelength of 1.55 µm.
© 2012 OSA
OCIS Codes
(130.0130) Integrated optics : Integrated optics
(130.0250) Integrated optics : Optoelectronics
(250.0040) Optoelectronics : Detectors
ToC Category:
Integrated Optics
History
Original Manuscript: October 6, 2011
Revised Manuscript: November 9, 2011
Manuscript Accepted: November 9, 2011
Published: January 4, 2012
Citation
Laurent Vivien, Andreas Polzer, Delphine Marris-Morini, Johann Osmond, Jean Michel Hartmann, Paul Crozat, Eric Cassan, Christophe Kopp, Horst Zimmermann, and Jean Marc Fédéli, "Zero-bias 40Gbit/s germanium waveguide photodetector on silicon," Opt. Express 20, 1096-1101 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-2-1096
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References
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Bowers, J. E.
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Clavelier, L.
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Descos, A.
Doerr, C. R.
Dong, P.
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Fedeli, J.-M.
Fédéli, J. M.
Fédéli, J.-M.
Feng, D.
Feng, N.-N.
Fong, J.
Fournier, M.
Fulbert, L.
Gardes, F. Y.
Ghandi, R.
Grampeix, H.
Grosse, P.
Halbwax, M.
Hartmann, J. M.
Hartmann, J.-M.
Heyns, M. M.
Holliger, P.
Hu, Y.
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Itabashi, S.-I.
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Kasper, E.
Khatibi, A.
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Kolahdouz, M.
Kung, C.-C.
Laval, S.
Le Roux, X.
Lecunff, Y.
Lee, S.
Liang, H.
Liao, S.
Liu, J.
Liu, Y.
Loo, R.
Luo, Y.
Lupu, A.
Lyan, P.
Maine, S.
Maresca, L.
Marris-Morini, D.
Mashanovich, G.
Michel, J.
Morse, M. M.
Nishi, H.
Oehme, M.
Olivier, N.
Osmond, J.
Paniccia, M. J.
Papon, A. M.
Park, S.
Peters, J. D.
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Reed, G. T.
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Rolland, G.
Rouvière, M.
Rubin, D.
Sarid, G.
Shafiiha, R.
Shinojima, H.
Simoen, E.
Souriau, L.
Sun, X.
Thomson, D. J.
Tillack, B.
Tsuchizawa, T.
Vivien, L.
Wada, K.
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Wang, J.
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Wohl, G.
Yamada, K.
Yamamoto, Y.
Yin, T.
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- J. M. Hartmann, A. Abbadie, N. Cherkashin, H. Grampeix, and L. Clavelier, “Epitaxial growth of Ge thick layers on nominal and 6° off Si(001); Ge surface passivation by Si,” Semicond. Sci. Technol.24, 055002–055005 (2009).
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- Y. Yamamoto, P. Zaumseil, T. Arguirov, M. Kittler, and B. Tillack, “Low threading dislocation density Ge deposited on Si (1 0 0) using RPCVD,” Solid-State Electron.60(1), 2–6 (2011). [CrossRef]
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- M. Jutzi, M. Berroth, G. Wohl, M. Oehme, and E. Kasper, “Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth,” IEEE Photonics Technol. Lett.17(7), 1510–1512 (2005). [CrossRef]
- J. M. Hartmann, A. Abbadie, J. P. Barnes, J. M. Fédéli, T. Billon, and L. Vivien, “Impact of the H2 anneal on the structural and optical properties of thin and thick Ge layers on Si; Low temperature surface passivation of Ge by Si,” J. Cryst. Growth312(4), 532–541 (2010). [CrossRef]
- J.-M. Hartmann, A. Abbadie, A. M. Papon, P. Holliger, G. Rolland, T. Billon, J.-M. Fédéli, M. Rouvière, L. Vivien, and S. Laval, “Reduced pressure-chemical vapor deposition of Ge thick layers on Si(001) for 1.3-1.55-µm photodetection,” J. Appl. Phys.95(10), 5905–5907 (2004). [CrossRef]
- G. Wang, R. Loo, E. Simoen, L. Souriau, M. Caymax, M. M. Heyns, and B. Blanpain, “A model of threading dislocation density in strain-relaxed Ge and GaAs epitaxial films on Si (100),” Appl. Phys. Lett.94(10), 102115 (2009). [CrossRef]
- L. Chen, C. R. Doerr, L. Buhl, Y. Baeyens, and R. A. Aroca, “Monolithically integrated 40-wavelength demultiplexer and photodetector array on silicon,” IEEE Photonics Technol. Lett.23(13), 869–871 (2011). [CrossRef]
- D. Marris-Morini, L. Vivien, G. Rasigade, J.-M. Fedeli, E. Cassan, X. Le Roux, P. Crozat, S. Maine, A. Lupu, P. Lyan, P. Rivallin, M. Halbwax, and S. Laval, “Recent Progress in High-Speed Silicon-Based Optical Modulators,” Proc. IEEE97(7), 1199–1215 (2009). [CrossRef]
- L. Vivien, J. Osmond, J.-M. Fédéli, D. Marris-Morini, P. Crozat, J.-F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, “42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide,” Opt. Express17(8), 6252–6257 (2009). [CrossRef] [PubMed]
- G. Wang, R. Loo, E. Simoen, L. Souriau, M. Caymax, M. M. Heyns, and B. Blanpain, “A model of threading dislocation density in strain-relaxed Ge and GaAs epitaxial films on Si (100),” Appl. Phys. Lett.94(10), 102115 (2009). [CrossRef]
- L. Chen, C. R. Doerr, L. Buhl, Y. Baeyens, and R. A. Aroca, “Monolithically integrated 40-wavelength demultiplexer and photodetector array on silicon,” IEEE Photonics Technol. Lett.23(13), 869–871 (2011). [CrossRef]
- J. M. Hartmann, A. Abbadie, N. Cherkashin, H. Grampeix, and L. Clavelier, “Epitaxial growth of Ge thick layers on nominal and 6° off Si(001); Ge surface passivation by Si,” Semicond. Sci. Technol.24, 055002–055005 (2009).
- J. M. Hartmann, A. Abbadie, N. Cherkashin, H. Grampeix, and L. Clavelier, “Epitaxial growth of Ge thick layers on nominal and 6° off Si(001); Ge surface passivation by Si,” Semicond. Sci. Technol.24, 055002–055005 (2009).
- L. Vivien, J. Osmond, J.-M. Fédéli, D. Marris-Morini, P. Crozat, J.-F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, “42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide,” Opt. Express17(8), 6252–6257 (2009). [CrossRef] [PubMed]
- D. Marris-Morini, L. Vivien, G. Rasigade, J.-M. Fedeli, E. Cassan, X. Le Roux, P. Crozat, S. Maine, A. Lupu, P. Lyan, P. Rivallin, M. Halbwax, and S. Laval, “Recent Progress in High-Speed Silicon-Based Optical Modulators,” Proc. IEEE97(7), 1199–1215 (2009). [CrossRef]
- L. Chen, C. R. Doerr, L. Buhl, Y. Baeyens, and R. A. Aroca, “Monolithically integrated 40-wavelength demultiplexer and photodetector array on silicon,” IEEE Photonics Technol. Lett.23(13), 869–871 (2011). [CrossRef]
- D. J. Thomson, F. Y. Gardes, Y. Hu, G. Mashanovich, M. Fournier, P. Grosse, J.-M. Fedeli, and G. T. Reed, “High contrast 40Gbit/s optical modulation in silicon,” Opt. Express19(12), 11507–11516 (2011). [CrossRef] [PubMed]
- D. Marris-Morini, L. Vivien, G. Rasigade, J.-M. Fedeli, E. Cassan, X. Le Roux, P. Crozat, S. Maine, A. Lupu, P. Lyan, P. Rivallin, M. Halbwax, and S. Laval, “Recent Progress in High-Speed Silicon-Based Optical Modulators,” Proc. IEEE97(7), 1199–1215 (2009). [CrossRef]
- J. M. Hartmann, A. Abbadie, J. P. Barnes, J. M. Fédéli, T. Billon, and L. Vivien, “Impact of the H2 anneal on the structural and optical properties of thin and thick Ge layers on Si; Low temperature surface passivation of Ge by Si,” J. Cryst. Growth312(4), 532–541 (2010). [CrossRef]
- L. Vivien, J. Osmond, J.-M. Fédéli, D. Marris-Morini, P. Crozat, J.-F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, “42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide,” Opt. Express17(8), 6252–6257 (2009). [CrossRef] [PubMed]
- J.-M. Hartmann, A. Abbadie, A. M. Papon, P. Holliger, G. Rolland, T. Billon, J.-M. Fédéli, M. Rouvière, L. Vivien, and S. Laval, “Reduced pressure-chemical vapor deposition of Ge thick layers on Si(001) for 1.3-1.55-µm photodetection,” J. Appl. Phys.95(10), 5905–5907 (2004). [CrossRef]
- M. Kolahdouz, L. Maresca, R. Ghandi, A. Khatibi, and H. H. Radamson, “Kinetic Model of SiGe Selective Epitaxial Growth using RPCVD Technique,” J. Electrochem. Soc.158(4), H457 (2011). [CrossRef]
- J. M. Hartmann, A. Abbadie, N. Cherkashin, H. Grampeix, and L. Clavelier, “Epitaxial growth of Ge thick layers on nominal and 6° off Si(001); Ge surface passivation by Si,” Semicond. Sci. Technol.24, 055002–055005 (2009).
- D. J. Thomson, F. Y. Gardes, Y. Hu, G. Mashanovich, M. Fournier, P. Grosse, J.-M. Fedeli, and G. T. Reed, “High contrast 40Gbit/s optical modulation in silicon,” Opt. Express19(12), 11507–11516 (2011). [CrossRef] [PubMed]
- B. Ben Bakir, A. Descos, N. Olivier, D. Bordel, P. Grosse, E. Augendre, L. Fulbert, and J. M. Fedeli, “Electrically driven hybrid Si/III-V Fabry-Pérot lasers based on adiabatic mode transformers,” Opt. Express19(11), 10317–10325 (2011). [CrossRef] [PubMed]
- D. Marris-Morini, L. Vivien, G. Rasigade, J.-M. Fedeli, E. Cassan, X. Le Roux, P. Crozat, S. Maine, A. Lupu, P. Lyan, P. Rivallin, M. Halbwax, and S. Laval, “Recent Progress in High-Speed Silicon-Based Optical Modulators,” Proc. IEEE97(7), 1199–1215 (2009). [CrossRef]
- J. M. Hartmann, A. Abbadie, J. P. Barnes, J. M. Fédéli, T. Billon, and L. Vivien, “Impact of the H2 anneal on the structural and optical properties of thin and thick Ge layers on Si; Low temperature surface passivation of Ge by Si,” J. Cryst. Growth312(4), 532–541 (2010). [CrossRef]
- J. M. Hartmann, A. Abbadie, N. Cherkashin, H. Grampeix, and L. Clavelier, “Epitaxial growth of Ge thick layers on nominal and 6° off Si(001); Ge surface passivation by Si,” Semicond. Sci. Technol.24, 055002–055005 (2009).
- J.-M. Hartmann, A. Abbadie, A. M. Papon, P. Holliger, G. Rolland, T. Billon, J.-M. Fédéli, M. Rouvière, L. Vivien, and S. Laval, “Reduced pressure-chemical vapor deposition of Ge thick layers on Si(001) for 1.3-1.55-µm photodetection,” J. Appl. Phys.95(10), 5905–5907 (2004). [CrossRef]
- G. Wang, R. Loo, E. Simoen, L. Souriau, M. Caymax, M. M. Heyns, and B. Blanpain, “A model of threading dislocation density in strain-relaxed Ge and GaAs epitaxial films on Si (100),” Appl. Phys. Lett.94(10), 102115 (2009). [CrossRef]
- J.-M. Hartmann, A. Abbadie, A. M. Papon, P. Holliger, G. Rolland, T. Billon, J.-M. Fédéli, M. Rouvière, L. Vivien, and S. Laval, “Reduced pressure-chemical vapor deposition of Ge thick layers on Si(001) for 1.3-1.55-µm photodetection,” J. Appl. Phys.95(10), 5905–5907 (2004). [CrossRef]
- T. Tsuchizawa, K. Yamada, T. Watanabe, S. Park, H. Nishi, K. Rai, H. Shinojima, and S.-I. Itabashi, “Monolithic integration of silicon-, germanium-, and silica-based optical devices for telecommunications applications,” IEEE J. Select. Top.Quantum Electron17(3), 516–525 (2011). [CrossRef]
- M. Jutzi, M. Berroth, G. Wohl, M. Oehme, and E. Kasper, “Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth,” IEEE Photonics Technol. Lett.17(7), 1510–1512 (2005). [CrossRef]
- M. Jutzi, M. Berroth, G. Wohl, M. Oehme, and E. Kasper, “Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth,” IEEE Photonics Technol. Lett.17(7), 1510–1512 (2005). [CrossRef]
- M. Kolahdouz, L. Maresca, R. Ghandi, A. Khatibi, and H. H. Radamson, “Kinetic Model of SiGe Selective Epitaxial Growth using RPCVD Technique,” J. Electrochem. Soc.158(4), H457 (2011). [CrossRef]
- Y. Yamamoto, P. Zaumseil, T. Arguirov, M. Kittler, and B. Tillack, “Low threading dislocation density Ge deposited on Si (1 0 0) using RPCVD,” Solid-State Electron.60(1), 2–6 (2011). [CrossRef]
- M. Kolahdouz, L. Maresca, R. Ghandi, A. Khatibi, and H. H. Radamson, “Kinetic Model of SiGe Selective Epitaxial Growth using RPCVD Technique,” J. Electrochem. Soc.158(4), H457 (2011). [CrossRef]
- D. Marris-Morini, L. Vivien, G. Rasigade, J.-M. Fedeli, E. Cassan, X. Le Roux, P. Crozat, S. Maine, A. Lupu, P. Lyan, P. Rivallin, M. Halbwax, and S. Laval, “Recent Progress in High-Speed Silicon-Based Optical Modulators,” Proc. IEEE97(7), 1199–1215 (2009). [CrossRef]
- L. Vivien, J. Osmond, J.-M. Fédéli, D. Marris-Morini, P. Crozat, J.-F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, “42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide,” Opt. Express17(8), 6252–6257 (2009). [CrossRef] [PubMed]
- J.-M. Hartmann, A. Abbadie, A. M. Papon, P. Holliger, G. Rolland, T. Billon, J.-M. Fédéli, M. Rouvière, L. Vivien, and S. Laval, “Reduced pressure-chemical vapor deposition of Ge thick layers on Si(001) for 1.3-1.55-µm photodetection,” J. Appl. Phys.95(10), 5905–5907 (2004). [CrossRef]
- D. Marris-Morini, L. Vivien, G. Rasigade, J.-M. Fedeli, E. Cassan, X. Le Roux, P. Crozat, S. Maine, A. Lupu, P. Lyan, P. Rivallin, M. Halbwax, and S. Laval, “Recent Progress in High-Speed Silicon-Based Optical Modulators,” Proc. IEEE97(7), 1199–1215 (2009). [CrossRef]
- J. Wang and S. Lee, “Ge-Photodetectors for Si-Based Optoelectronic Integration,” Sensors (Basel Switzerland)11(1), 696–718 (2011). [CrossRef]
- G. Wang, R. Loo, E. Simoen, L. Souriau, M. Caymax, M. M. Heyns, and B. Blanpain, “A model of threading dislocation density in strain-relaxed Ge and GaAs epitaxial films on Si (100),” Appl. Phys. Lett.94(10), 102115 (2009). [CrossRef]
- D. Marris-Morini, L. Vivien, G. Rasigade, J.-M. Fedeli, E. Cassan, X. Le Roux, P. Crozat, S. Maine, A. Lupu, P. Lyan, P. Rivallin, M. Halbwax, and S. Laval, “Recent Progress in High-Speed Silicon-Based Optical Modulators,” Proc. IEEE97(7), 1199–1215 (2009). [CrossRef]
- D. Marris-Morini, L. Vivien, G. Rasigade, J.-M. Fedeli, E. Cassan, X. Le Roux, P. Crozat, S. Maine, A. Lupu, P. Lyan, P. Rivallin, M. Halbwax, and S. Laval, “Recent Progress in High-Speed Silicon-Based Optical Modulators,” Proc. IEEE97(7), 1199–1215 (2009). [CrossRef]
- D. Marris-Morini, L. Vivien, G. Rasigade, J.-M. Fedeli, E. Cassan, X. Le Roux, P. Crozat, S. Maine, A. Lupu, P. Lyan, P. Rivallin, M. Halbwax, and S. Laval, “Recent Progress in High-Speed Silicon-Based Optical Modulators,” Proc. IEEE97(7), 1199–1215 (2009). [CrossRef]
- M. Kolahdouz, L. Maresca, R. Ghandi, A. Khatibi, and H. H. Radamson, “Kinetic Model of SiGe Selective Epitaxial Growth using RPCVD Technique,” J. Electrochem. Soc.158(4), H457 (2011). [CrossRef]
- D. Marris-Morini, L. Vivien, G. Rasigade, J.-M. Fedeli, E. Cassan, X. Le Roux, P. Crozat, S. Maine, A. Lupu, P. Lyan, P. Rivallin, M. Halbwax, and S. Laval, “Recent Progress in High-Speed Silicon-Based Optical Modulators,” Proc. IEEE97(7), 1199–1215 (2009). [CrossRef]
- L. Vivien, J. Osmond, J.-M. Fédéli, D. Marris-Morini, P. Crozat, J.-F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, “42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide,” Opt. Express17(8), 6252–6257 (2009). [CrossRef] [PubMed]
- T. Tsuchizawa, K. Yamada, T. Watanabe, S. Park, H. Nishi, K. Rai, H. Shinojima, and S.-I. Itabashi, “Monolithic integration of silicon-, germanium-, and silica-based optical devices for telecommunications applications,” IEEE J. Select. Top.Quantum Electron17(3), 516–525 (2011). [CrossRef]
- S. Park, T. Tsuchizawa, T. Watanabe, H. Shinojima, H. Nishi, K. Yamada, Y. Ishikawa, K. Wada, and S. Itabashi, “Monolithic integration and synchronous operation of germanium photodetectors and silicon variable optical attenuators,” Opt. Express18(8), 8412–8421 (2010). [CrossRef] [PubMed]
- M. Jutzi, M. Berroth, G. Wohl, M. Oehme, and E. Kasper, “Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth,” IEEE Photonics Technol. Lett.17(7), 1510–1512 (2005). [CrossRef]
- J.-M. Hartmann, A. Abbadie, A. M. Papon, P. Holliger, G. Rolland, T. Billon, J.-M. Fédéli, M. Rouvière, L. Vivien, and S. Laval, “Reduced pressure-chemical vapor deposition of Ge thick layers on Si(001) for 1.3-1.55-µm photodetection,” J. Appl. Phys.95(10), 5905–5907 (2004). [CrossRef]
- T. Tsuchizawa, K. Yamada, T. Watanabe, S. Park, H. Nishi, K. Rai, H. Shinojima, and S.-I. Itabashi, “Monolithic integration of silicon-, germanium-, and silica-based optical devices for telecommunications applications,” IEEE J. Select. Top.Quantum Electron17(3), 516–525 (2011). [CrossRef]
- S. Park, T. Tsuchizawa, T. Watanabe, H. Shinojima, H. Nishi, K. Yamada, Y. Ishikawa, K. Wada, and S. Itabashi, “Monolithic integration and synchronous operation of germanium photodetectors and silicon variable optical attenuators,” Opt. Express18(8), 8412–8421 (2010). [CrossRef] [PubMed]
- M. Kolahdouz, L. Maresca, R. Ghandi, A. Khatibi, and H. H. Radamson, “Kinetic Model of SiGe Selective Epitaxial Growth using RPCVD Technique,” J. Electrochem. Soc.158(4), H457 (2011). [CrossRef]
- T. Tsuchizawa, K. Yamada, T. Watanabe, S. Park, H. Nishi, K. Rai, H. Shinojima, and S.-I. Itabashi, “Monolithic integration of silicon-, germanium-, and silica-based optical devices for telecommunications applications,” IEEE J. Select. Top.Quantum Electron17(3), 516–525 (2011). [CrossRef]
- D. Marris-Morini, L. Vivien, G. Rasigade, J.-M. Fedeli, E. Cassan, X. Le Roux, P. Crozat, S. Maine, A. Lupu, P. Lyan, P. Rivallin, M. Halbwax, and S. Laval, “Recent Progress in High-Speed Silicon-Based Optical Modulators,” Proc. IEEE97(7), 1199–1215 (2009). [CrossRef]
- D. Marris-Morini, L. Vivien, G. Rasigade, J.-M. Fedeli, E. Cassan, X. Le Roux, P. Crozat, S. Maine, A. Lupu, P. Lyan, P. Rivallin, M. Halbwax, and S. Laval, “Recent Progress in High-Speed Silicon-Based Optical Modulators,” Proc. IEEE97(7), 1199–1215 (2009). [CrossRef]
- J.-M. Hartmann, A. Abbadie, A. M. Papon, P. Holliger, G. Rolland, T. Billon, J.-M. Fédéli, M. Rouvière, L. Vivien, and S. Laval, “Reduced pressure-chemical vapor deposition of Ge thick layers on Si(001) for 1.3-1.55-µm photodetection,” J. Appl. Phys.95(10), 5905–5907 (2004). [CrossRef]
- J.-M. Hartmann, A. Abbadie, A. M. Papon, P. Holliger, G. Rolland, T. Billon, J.-M. Fédéli, M. Rouvière, L. Vivien, and S. Laval, “Reduced pressure-chemical vapor deposition of Ge thick layers on Si(001) for 1.3-1.55-µm photodetection,” J. Appl. Phys.95(10), 5905–5907 (2004). [CrossRef]
- T. Tsuchizawa, K. Yamada, T. Watanabe, S. Park, H. Nishi, K. Rai, H. Shinojima, and S.-I. Itabashi, “Monolithic integration of silicon-, germanium-, and silica-based optical devices for telecommunications applications,” IEEE J. Select. Top.Quantum Electron17(3), 516–525 (2011). [CrossRef]
- S. Park, T. Tsuchizawa, T. Watanabe, H. Shinojima, H. Nishi, K. Yamada, Y. Ishikawa, K. Wada, and S. Itabashi, “Monolithic integration and synchronous operation of germanium photodetectors and silicon variable optical attenuators,” Opt. Express18(8), 8412–8421 (2010). [CrossRef] [PubMed]
- G. Wang, R. Loo, E. Simoen, L. Souriau, M. Caymax, M. M. Heyns, and B. Blanpain, “A model of threading dislocation density in strain-relaxed Ge and GaAs epitaxial films on Si (100),” Appl. Phys. Lett.94(10), 102115 (2009). [CrossRef]
- G. Wang, R. Loo, E. Simoen, L. Souriau, M. Caymax, M. M. Heyns, and B. Blanpain, “A model of threading dislocation density in strain-relaxed Ge and GaAs epitaxial films on Si (100),” Appl. Phys. Lett.94(10), 102115 (2009). [CrossRef]
- Y. Yamamoto, P. Zaumseil, T. Arguirov, M. Kittler, and B. Tillack, “Low threading dislocation density Ge deposited on Si (1 0 0) using RPCVD,” Solid-State Electron.60(1), 2–6 (2011). [CrossRef]
- T. Tsuchizawa, K. Yamada, T. Watanabe, S. Park, H. Nishi, K. Rai, H. Shinojima, and S.-I. Itabashi, “Monolithic integration of silicon-, germanium-, and silica-based optical devices for telecommunications applications,” IEEE J. Select. Top.Quantum Electron17(3), 516–525 (2011). [CrossRef]
- S. Park, T. Tsuchizawa, T. Watanabe, H. Shinojima, H. Nishi, K. Yamada, Y. Ishikawa, K. Wada, and S. Itabashi, “Monolithic integration and synchronous operation of germanium photodetectors and silicon variable optical attenuators,” Opt. Express18(8), 8412–8421 (2010). [CrossRef] [PubMed]
- J. M. Hartmann, A. Abbadie, J. P. Barnes, J. M. Fédéli, T. Billon, and L. Vivien, “Impact of the H2 anneal on the structural and optical properties of thin and thick Ge layers on Si; Low temperature surface passivation of Ge by Si,” J. Cryst. Growth312(4), 532–541 (2010). [CrossRef]
- L. Vivien, J. Osmond, J.-M. Fédéli, D. Marris-Morini, P. Crozat, J.-F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, “42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide,” Opt. Express17(8), 6252–6257 (2009). [CrossRef] [PubMed]
- D. Marris-Morini, L. Vivien, G. Rasigade, J.-M. Fedeli, E. Cassan, X. Le Roux, P. Crozat, S. Maine, A. Lupu, P. Lyan, P. Rivallin, M. Halbwax, and S. Laval, “Recent Progress in High-Speed Silicon-Based Optical Modulators,” Proc. IEEE97(7), 1199–1215 (2009). [CrossRef]
- J.-M. Hartmann, A. Abbadie, A. M. Papon, P. Holliger, G. Rolland, T. Billon, J.-M. Fédéli, M. Rouvière, L. Vivien, and S. Laval, “Reduced pressure-chemical vapor deposition of Ge thick layers on Si(001) for 1.3-1.55-µm photodetection,” J. Appl. Phys.95(10), 5905–5907 (2004). [CrossRef]
- G. Wang, R. Loo, E. Simoen, L. Souriau, M. Caymax, M. M. Heyns, and B. Blanpain, “A model of threading dislocation density in strain-relaxed Ge and GaAs epitaxial films on Si (100),” Appl. Phys. Lett.94(10), 102115 (2009). [CrossRef]
- J. Wang and S. Lee, “Ge-Photodetectors for Si-Based Optoelectronic Integration,” Sensors (Basel Switzerland)11(1), 696–718 (2011). [CrossRef]
- T. Tsuchizawa, K. Yamada, T. Watanabe, S. Park, H. Nishi, K. Rai, H. Shinojima, and S.-I. Itabashi, “Monolithic integration of silicon-, germanium-, and silica-based optical devices for telecommunications applications,” IEEE J. Select. Top.Quantum Electron17(3), 516–525 (2011). [CrossRef]
- S. Park, T. Tsuchizawa, T. Watanabe, H. Shinojima, H. Nishi, K. Yamada, Y. Ishikawa, K. Wada, and S. Itabashi, “Monolithic integration and synchronous operation of germanium photodetectors and silicon variable optical attenuators,” Opt. Express18(8), 8412–8421 (2010). [CrossRef] [PubMed]
- M. Jutzi, M. Berroth, G. Wohl, M. Oehme, and E. Kasper, “Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth,” IEEE Photonics Technol. Lett.17(7), 1510–1512 (2005). [CrossRef]
- T. Tsuchizawa, K. Yamada, T. Watanabe, S. Park, H. Nishi, K. Rai, H. Shinojima, and S.-I. Itabashi, “Monolithic integration of silicon-, germanium-, and silica-based optical devices for telecommunications applications,” IEEE J. Select. Top.Quantum Electron17(3), 516–525 (2011). [CrossRef]
- S. Park, T. Tsuchizawa, T. Watanabe, H. Shinojima, H. Nishi, K. Yamada, Y. Ishikawa, K. Wada, and S. Itabashi, “Monolithic integration and synchronous operation of germanium photodetectors and silicon variable optical attenuators,” Opt. Express18(8), 8412–8421 (2010). [CrossRef] [PubMed]
- Y. Yamamoto, P. Zaumseil, T. Arguirov, M. Kittler, and B. Tillack, “Low threading dislocation density Ge deposited on Si (1 0 0) using RPCVD,” Solid-State Electron.60(1), 2–6 (2011). [CrossRef]
- Y. Yamamoto, P. Zaumseil, T. Arguirov, M. Kittler, and B. Tillack, “Low threading dislocation density Ge deposited on Si (1 0 0) using RPCVD,” Solid-State Electron.60(1), 2–6 (2011). [CrossRef]
Appl. Phys. Lett.
- G. Wang, R. Loo, E. Simoen, L. Souriau, M. Caymax, M. M. Heyns, and B. Blanpain, “A model of threading dislocation density in strain-relaxed Ge and GaAs epitaxial films on Si (100),” Appl. Phys. Lett.94(10), 102115 (2009). [CrossRef]
IEEE J. Select. Top.Quantum Electron
- T. Tsuchizawa, K. Yamada, T. Watanabe, S. Park, H. Nishi, K. Rai, H. Shinojima, and S.-I. Itabashi, “Monolithic integration of silicon-, germanium-, and silica-based optical devices for telecommunications applications,” IEEE J. Select. Top.Quantum Electron17(3), 516–525 (2011). [CrossRef]
IEEE Photonics Technol. Lett.
- L. Chen, C. R. Doerr, L. Buhl, Y. Baeyens, and R. A. Aroca, “Monolithically integrated 40-wavelength demultiplexer and photodetector array on silicon,” IEEE Photonics Technol. Lett.23(13), 869–871 (2011). [CrossRef]
- M. Jutzi, M. Berroth, G. Wohl, M. Oehme, and E. Kasper, “Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth,” IEEE Photonics Technol. Lett.17(7), 1510–1512 (2005). [CrossRef]
J. Appl. Phys.
- J.-M. Hartmann, A. Abbadie, A. M. Papon, P. Holliger, G. Rolland, T. Billon, J.-M. Fédéli, M. Rouvière, L. Vivien, and S. Laval, “Reduced pressure-chemical vapor deposition of Ge thick layers on Si(001) for 1.3-1.55-µm photodetection,” J. Appl. Phys.95(10), 5905–5907 (2004). [CrossRef]
J. Cryst. Growth
- J. M. Hartmann, A. Abbadie, J. P. Barnes, J. M. Fédéli, T. Billon, and L. Vivien, “Impact of the H2 anneal on the structural and optical properties of thin and thick Ge layers on Si; Low temperature surface passivation of Ge by Si,” J. Cryst. Growth312(4), 532–541 (2010). [CrossRef]
J. Electrochem. Soc.
- M. Kolahdouz, L. Maresca, R. Ghandi, A. Khatibi, and H. H. Radamson, “Kinetic Model of SiGe Selective Epitaxial Growth using RPCVD Technique,” J. Electrochem. Soc.158(4), H457 (2011). [CrossRef]
Opt. Express
- S. Park, T. Tsuchizawa, T. Watanabe, H. Shinojima, H. Nishi, K. Yamada, Y. Ishikawa, K. Wada, and S. Itabashi, “Monolithic integration and synchronous operation of germanium photodetectors and silicon variable optical attenuators,” Opt. Express18(8), 8412–8421 (2010). [CrossRef] [PubMed]
- S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express19(11), 10967–10972 (2011). [CrossRef] [PubMed]
- T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate,” Opt. Express15(21), 13965–13971 (2007). [CrossRef] [PubMed]
- H.-W. Chen, J. D. Peters, and J. E. Bowers, “Forty Gb/s hybrid silicon Mach-Zehnder modulator with low chirp,” Opt. Express19(2), 1455–1460 (2011). [CrossRef] [PubMed]
- L. Vivien, J. Osmond, J.-M. Fédéli, D. Marris-Morini, P. Crozat, J.-F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, “42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide,” Opt. Express17(8), 6252–6257 (2009). [CrossRef] [PubMed]
- B. Ben Bakir, A. Descos, N. Olivier, D. Bordel, P. Grosse, E. Augendre, L. Fulbert, and J. M. Fedeli, “Electrically driven hybrid Si/III-V Fabry-Pérot lasers based on adiabatic mode transformers,” Opt. Express19(11), 10317–10325 (2011). [CrossRef] [PubMed]
- D. J. Thomson, F. Y. Gardes, Y. Hu, G. Mashanovich, M. Fournier, P. Grosse, J.-M. Fedeli, and G. T. Reed, “High contrast 40Gbit/s optical modulation in silicon,” Opt. Express19(12), 11507–11516 (2011). [CrossRef] [PubMed]
Opt. Lett.
- J. Liu, X. Sun, R. Camacho-Aguilera, L. C. Kimerling, and J. Michel, “Ge-on-Si laser operating at room temperature,” Opt. Lett.35(5), 679–681 (2010). [CrossRef] [PubMed]
Proc. IEEE
- D. Marris-Morini, L. Vivien, G. Rasigade, J.-M. Fedeli, E. Cassan, X. Le Roux, P. Crozat, S. Maine, A. Lupu, P. Lyan, P. Rivallin, M. Halbwax, and S. Laval, “Recent Progress in High-Speed Silicon-Based Optical Modulators,” Proc. IEEE97(7), 1199–1215 (2009). [CrossRef]
Semicond. Sci. Technol.
- J. M. Hartmann, A. Abbadie, N. Cherkashin, H. Grampeix, and L. Clavelier, “Epitaxial growth of Ge thick layers on nominal and 6° off Si(001); Ge surface passivation by Si,” Semicond. Sci. Technol.24, 055002–055005 (2009).
Sensors (Basel Switzerland)
- J. Wang and S. Lee, “Ge-Photodetectors for Si-Based Optoelectronic Integration,” Sensors (Basel Switzerland)11(1), 696–718 (2011). [CrossRef]
Solid-State Electron.
- Y. Yamamoto, P. Zaumseil, T. Arguirov, M. Kittler, and B. Tillack, “Low threading dislocation density Ge deposited on Si (1 0 0) using RPCVD,” Solid-State Electron.60(1), 2–6 (2011). [CrossRef]
2011, Ben Bakir, Opt. Express
- T. Tsuchizawa, K. Yamada, T. Watanabe, S. Park, H. Nishi, K. Rai, H. Shinojima, and S.-I. Itabashi, “Monolithic integration of silicon-, germanium-, and silica-based optical devices for telecommunications applications,” IEEE J. Select. Top.Quantum Electron17(3), 516–525 (2011). [CrossRef]
- J. Wang and S. Lee, “Ge-Photodetectors for Si-Based Optoelectronic Integration,” Sensors (Basel Switzerland)11(1), 696–718 (2011). [CrossRef]
- L. Chen, C. R. Doerr, L. Buhl, Y. Baeyens, and R. A. Aroca, “Monolithically integrated 40-wavelength demultiplexer and photodetector array on silicon,” IEEE Photonics Technol. Lett.23(13), 869–871 (2011). [CrossRef]
- M. Kolahdouz, L. Maresca, R. Ghandi, A. Khatibi, and H. H. Radamson, “Kinetic Model of SiGe Selective Epitaxial Growth using RPCVD Technique,” J. Electrochem. Soc.158(4), H457 (2011). [CrossRef]
- Y. Yamamoto, P. Zaumseil, T. Arguirov, M. Kittler, and B. Tillack, “Low threading dislocation density Ge deposited on Si (1 0 0) using RPCVD,” Solid-State Electron.60(1), 2–6 (2011). [CrossRef]
- J. M. Hartmann, A. Abbadie, J. P. Barnes, J. M. Fédéli, T. Billon, and L. Vivien, “Impact of the H2 anneal on the structural and optical properties of thin and thick Ge layers on Si; Low temperature surface passivation of Ge by Si,” J. Cryst. Growth312(4), 532–541 (2010). [CrossRef]
- D. Marris-Morini, L. Vivien, G. Rasigade, J.-M. Fedeli, E. Cassan, X. Le Roux, P. Crozat, S. Maine, A. Lupu, P. Lyan, P. Rivallin, M. Halbwax, and S. Laval, “Recent Progress in High-Speed Silicon-Based Optical Modulators,” Proc. IEEE97(7), 1199–1215 (2009). [CrossRef]
- J. M. Hartmann, A. Abbadie, N. Cherkashin, H. Grampeix, and L. Clavelier, “Epitaxial growth of Ge thick layers on nominal and 6° off Si(001); Ge surface passivation by Si,” Semicond. Sci. Technol.24, 055002–055005 (2009).
- G. Wang, R. Loo, E. Simoen, L. Souriau, M. Caymax, M. M. Heyns, and B. Blanpain, “A model of threading dislocation density in strain-relaxed Ge and GaAs epitaxial films on Si (100),” Appl. Phys. Lett.94(10), 102115 (2009). [CrossRef]
- M. Jutzi, M. Berroth, G. Wohl, M. Oehme, and E. Kasper, “Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth,” IEEE Photonics Technol. Lett.17(7), 1510–1512 (2005). [CrossRef]
- J.-M. Hartmann, A. Abbadie, A. M. Papon, P. Holliger, G. Rolland, T. Billon, J.-M. Fédéli, M. Rouvière, L. Vivien, and S. Laval, “Reduced pressure-chemical vapor deposition of Ge thick layers on Si(001) for 1.3-1.55-µm photodetection,” J. Appl. Phys.95(10), 5905–5907 (2004). [CrossRef]
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