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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 20 — Sep. 24, 2012
  • pp: 22224–22232

High speed GeSi electro-absorption modulator at 1550 nm wavelength on SOI waveguide

Dazeng Feng, Shirong Liao, Hong Liang, Joan Fong, Bhavin Bijlani, Roshanak Shafiiha, B. Jonathan Luff, Ying Luo, Jack Cunningham, Ashok V. Krishnamoorthy, and Mehdi Asghari  »View Author Affiliations


Optics Express, Vol. 20, Issue 20, pp. 22224-22232 (2012)
http://dx.doi.org/10.1364/OE.20.022224


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Abstract

We demonstrate a high speed GeSi electro-absorption (EA) modulator monolithically integrated on 3 µm silicon-on-insulator (SOI) waveguide. The demonstrated device has a compact active region of 1.0 × 55 μm2, an insertion loss of 5 dB and an extinction ratio of 6 dB at wavelength of 1550 nm. The modulator has a broad operating wavelength range of 35 nm and a 3 dB bandwidth of 40.7 GHz at 2.8 V reverse bias. This compact and energy efficient modulator is a key building block for optical interconnection applications.

© 2012 OSA

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(200.4650) Optics in computing : Optical interconnects
(230.2090) Optical devices : Electro-optical devices
(250.7360) Optoelectronics : Waveguide modulators

ToC Category:
Integrated Optics

History
Original Manuscript: July 17, 2012
Revised Manuscript: September 10, 2012
Manuscript Accepted: September 11, 2012
Published: September 13, 2012

Citation
Dazeng Feng, Shirong Liao, Hong Liang, Joan Fong, Bhavin Bijlani, Roshanak Shafiiha, B. Jonathan Luff, Ying Luo, Jack Cunningham, Ashok V. Krishnamoorthy, and Mehdi Asghari, "High speed GeSi electro-absorption modulator at 1550 nm wavelength on SOI waveguide," Opt. Express 20, 22224-22232 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-20-22224


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