OSA's Digital Library

Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 20 — Sep. 24, 2012
  • pp: 22224–22232

Optics InfoBase > Optics Express > Volume 20 > Issue 20 > Page 22224

High speed GeSi electro-absorption modulator at 1550 nm wavelength on SOI waveguide

Dazeng Feng, Shirong Liao, Hong Liang, Joan Fong, Bhavin Bijlani, Roshanak Shafiiha, B. Jonathan Luff, Ying Luo, Jack Cunningham, Ashok V. Krishnamoorthy, and Mehdi Asghari  »View Author Affiliations


Optics Express, Vol. 20, Issue 20, pp. 22224-22232 (2012)
http://dx.doi.org/10.1364/OE.20.022224


View Full Text Article

Enhanced HTML    Acrobat PDF (2473 KB)


Advanced Search

Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations

Abstract

We demonstrate a high speed GeSi electro-absorption (EA) modulator monolithically integrated on 3 µm silicon-on-insulator (SOI) waveguide. The demonstrated device has a compact active region of 1.0 × 55 μm2, an insertion loss of 5 dB and an extinction ratio of 6 dB at wavelength of 1550 nm. The modulator has a broad operating wavelength range of 35 nm and a 3 dB bandwidth of 40.7 GHz at 2.8 V reverse bias. This compact and energy efficient modulator is a key building block for optical interconnection applications.

© 2012 OSA

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(200.4650) Optics in computing : Optical interconnects
(230.2090) Optical devices : Electro-optical devices
(250.7360) Optoelectronics : Waveguide modulators

ToC Category:
Integrated Optics

History
Original Manuscript: July 17, 2012
Revised Manuscript: September 10, 2012
Manuscript Accepted: September 11, 2012
Published: September 13, 2012

Citation
Dazeng Feng, Shirong Liao, Hong Liang, Joan Fong, Bhavin Bijlani, Roshanak Shafiiha, B. Jonathan Luff, Ying Luo, Jack Cunningham, Ashok V. Krishnamoorthy, and Mehdi Asghari, "High speed GeSi electro-absorption modulator at 1550 nm wavelength on SOI waveguide," Opt. Express 20, 22224-22232 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-20-22224


Sort:  Author  |  Year  |  Journal  |  Reset  

References

  1. R. A. Soref, “The past, present and future of silicon photonics,” IEEE J. Sel. Top. Quantum Electron.12(6), 1678–1687 (2006). [CrossRef]
  2. L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE6125, 612502 (2006). [CrossRef]
  3. A. V. Krishnamoorthy, R. Ho, X. Zheng, H. Schwetman, J. Lexau, P. Koka, G. Li, I. Shubin, and J. E. Cunningham, “Computer Systems Based on Silicon Photonic Interconnects,” Proc. IEEE97(7), 1337–1361 (2009). [CrossRef]
  4. D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett.95(26), 261105 (2009). [CrossRef]
  5. D. Feng, W. Qian, H. Liang, C.-C. Kung, J. Fong, B. J. Luff, and M. Asghari, “Fabrication intensive echelle grating in silicon-on-insulator platform,” IEEE Photon. Technol. Lett.23, 284–287 (2011).
  6. Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, “Micrometre-scale silicon electro-optic modulator,” Nature435(7040), 325–327 (2005). [CrossRef] [PubMed]
  7. A. Liu, L. Liao, D. Rubin, H. Nguyen, B. Ciftcioglu, Y. Chetrit, N. Izhaky, and M. Paniccia, “High-speed optical modulation based on carrier depletion in a silicon waveguide,” Opt. Express15(2), 660–668 (2007). [CrossRef] [PubMed]
  8. N.-N. Feng, S. Liao, D. Feng, P. Dong, D. Zheng, H. Liang, R. Shafiiha, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High speed carrier-depletion modulators with 1.4V-cm VπL integrated on 0.25microm silicon-on-insulator waveguides,” Opt. Express18(8), 7994–7999 (2010). [CrossRef] [PubMed]
  9. D. J. Thomson, F. Y. Gardes, Y. Hu, G. Mashanovich, M. Fournier, P. Grosse, J.-M. Fédéli, and G. T. Reed, “High contrast 40Gbit/s optical modulation in silicon,” Opt. Express19(12), 11507–11516 (2011). [CrossRef] [PubMed]
  10. P. Dong, S. Liao, D. Feng, H. Liang, D. Zheng, R. Shafiiha, C. C. Kung, W. Qian, G. Li, X. Zheng, A. V. Krishnamoorthy, and M. Asghari, “Low VPP, ultralow-energy, compact, high-speed silicon electro-optic modulator,” Opt. Express17(25), 22484–22490 (2009). [CrossRef] [PubMed]
  11. X. Zheng, D. Patil, J. Lexau, F. Liu, G. Li, H. Thacker, Y. Luo, I. Shubin, J. Li, J. Yao, P. Dong, D. Feng, M. Asghari, T. Pinguet, A. Mekis, P. Amberg, M. Dayringer, J. Gainsley, H. F. Moghadam, E. Alon, K. Raj, R. Ho, J. E. Cunningham, and A. V. Krishnamoorthy, “Ultra-efficient 10 Gb/s hybrid integrated silicon photonic transmitter and receiver,” Opt. Express19(6), 5172–5186 (2011). [CrossRef] [PubMed]
  12. J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators,” Nat. Photonics2(7), 433–437 (2008). [CrossRef]
  13. J. Liu, D. Pan, S. Jongthammanurak, K. Wada, L. C. Kimerling, and J. Michel, “Design of monolithically integrated GeSi electro-absorption modulators and photodetectors on a SOI platform,” Opt. Express15(2), 623–628 (2007). [CrossRef] [PubMed]
  14. Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature437(7063), 1334–1336 (2005). [CrossRef] [PubMed]
  15. P. Chaisakul, D. Marris-Morini, M. S. Rouifed, G. Isella, D. Chrastina, J. Frigerio, X. Le Roux, S. Edmond, J. R. Coudevylle, and L. Vivien, “23 GHz Ge/SiGe multiple quantum well electro-absorption modulator,” Opt. Express20(3), 3219–3224 (2012). [CrossRef] [PubMed]
  16. R. Shen, R. Yiwen, S. A. Claussen, R. K. Schaevitz, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides,” IEEE Photon. Technol. Lett.24(6), 461–463 (2012).
  17. A. E.-J. Lim, T.-Y. Liow, F. Qing, N. Duan, L. Ding, M. Yu, G.-Q. Lo, and D.-L. Kwong, “Novel evanescent-coupled germanium electro-absorption modulator featuring monolithic integration with germanium p-i-n photodetector,” Opt. Express19(6), 5040–5046 (2011). [CrossRef] [PubMed]
  18. N. N. Feng, D. Feng, S. Liao, X. Wang, P. Dong, H. Liang, C.-C. Kung, W. Qian, J. Fong, R. Shafiiha, Y. Luo, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “30GHz Ge electro-absorption modulator integrated with 3 μm silicon-on-insulator waveguide,” Opt. Express19(8), 7062–7067 (2011). [CrossRef] [PubMed]
  19. Y. Luo, X. Zheng, G. Li, I. Shubin, H. Thacker, J. Yao, H. Jin, D. Feng, J. Fong, C.-C. Kung, S. Liao, R. Shafiiha, M. Asghari, K. Raj, A. V. Krishnamoorthy, and J. Cunningham, “Strong Electro-Absorption in GeSi Epitaxy on Silicon-on-Insulator (SOI),” Micromachines3(2), 345–363 (2012). [CrossRef]

Cited By

 Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.


« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited