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Photoluminescence efficiency droop and stimulated recombination in GaN epilayers |
Optics Express, Vol. 20, Issue 23, pp. 25195-25200 (2012)
http://dx.doi.org/10.1364/OE.20.025195
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Abstract
The photoluminescence droop effect, i.e., the decrease in emission efficiency with increasing excitation intensity, is observed and studied in GaN epilayers with different carrier lifetimes. Spontaneous and stimulated emissions have been studied in the front-face and edge emission configurations. The onset of stimulated recombination occurs simultaneously with the droop onset in the front-face configuration and might be considered as an origin of the droop effect in GaN epilayers.
© 2012 OSA
OCIS Codes
(160.4760) Materials : Optical properties
(160.6000) Materials : Semiconductor materials
(250.5230) Optoelectronics : Photoluminescence
ToC Category:
Optoelectronics
History
Original Manuscript: May 1, 2012
Revised Manuscript: September 18, 2012
Manuscript Accepted: September 21, 2012
Published: October 22, 2012
Citation
Jūras Mickevičius, Jonas Jurkevičius, Michael S. Shur, Jinwei Yang, Remis Gaska, and Gintautas Tamulaitis, "Photoluminescence efficiency droop and stimulated recombination in GaN epilayers," Opt. Express 20, 25195-25200 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-23-25195
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