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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 23 — Nov. 5, 2012
  • pp: 25195–25200

Photoluminescence efficiency droop and stimulated recombination in GaN epilayers

Jūras Mickevičius, Jonas Jurkevičius, Michael S. Shur, Jinwei Yang, Remis Gaska, and Gintautas Tamulaitis  »View Author Affiliations

Optics Express, Vol. 20, Issue 23, pp. 25195-25200 (2012)

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The photoluminescence droop effect, i.e., the decrease in emission efficiency with increasing excitation intensity, is observed and studied in GaN epilayers with different carrier lifetimes. Spontaneous and stimulated emissions have been studied in the front-face and edge emission configurations. The onset of stimulated recombination occurs simultaneously with the droop onset in the front-face configuration and might be considered as an origin of the droop effect in GaN epilayers.

© 2012 OSA

OCIS Codes
(160.4760) Materials : Optical properties
(160.6000) Materials : Semiconductor materials
(250.5230) Optoelectronics : Photoluminescence

ToC Category:

Original Manuscript: May 1, 2012
Revised Manuscript: September 18, 2012
Manuscript Accepted: September 21, 2012
Published: October 22, 2012

Jūras Mickevičius, Jonas Jurkevičius, Michael S. Shur, Jinwei Yang, Remis Gaska, and Gintautas Tamulaitis, "Photoluminescence efficiency droop and stimulated recombination in GaN epilayers," Opt. Express 20, 25195-25200 (2012)

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  1. I. V. Rozhansky and D. A. Zakheim, “Analysis of dependence of electroluminescence efficiency of AlInGaN LED heterostructures on pumping,” Phys. Status Solidi C3(6), 2160–2164 (2006). [CrossRef]
  2. M.-H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett.91(18), 183507 (2007). [CrossRef]
  3. M. F. Schubert, S. Chhajed, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, “Effect of dislocation density on efficiency droop in GaInN/GaN light-emitting diodes,” Appl. Phys. Lett.91(23), 231114 (2007). [CrossRef]
  4. B. Monemar and B. E. Sernelius, “Defect related issues in the “current roll-off” in InGaN based light emitting diodes,” Appl. Phys. Lett.91(18), 181103 (2007). [CrossRef]
  5. A. A. Efremov, N. I. Bochkareva, R. I. Gorbunov, D. A. Larinovich, Y. T. Rebane, D. V. Tarkhin, and Y. G. Shreter, “Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs,” Semiconductors40(5), 605–610 (2006). [CrossRef]
  6. J. Hader, J. V. Moloney, and S. W. Koch, “Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes,” Appl. Phys. Lett.96(22), 221106 (2010). [CrossRef]
  7. Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, “Auger recombination in InGaN measured by photoluminescence,” Appl. Phys. Lett.91(14), 141101 (2007). [CrossRef]
  8. K. T. Delaney, P. Rinke, and C. G. Van de Walle, “Auger recombination rates in nitrides from first principles,” Appl. Phys. Lett.94(19), 191109 (2009). [CrossRef]
  9. H.-Y. Ryu, H.-S. Kim, and J.-I. Shim, “Rate equation analysis of efficiency droop in InGaN light-emitting diodes,” Appl. Phys. Lett.95(8), 081114 (2009). [CrossRef]
  10. G. Bourdon, I. Robert, I. Sagnes, and I. Abram, “Spontaneous emission in highly excited semiconductors: saturation of the radiative recombination rate,” J. Appl. Phys.92(11), 6595–6600 (2002). [CrossRef]
  11. J.-I. Shim, H. Kim, D.-S. Shin, and H.-Y. Yoo, “An explanation of efficiency droop in InGaN-based light emitting diodes: saturated radiative recombination rate at randomly distributed In-rich active areas,” J. Korean Phys. Soc.58(3), 503–508 (2011). [CrossRef]
  12. J. Hader, J. V. Moloney, and S. W. Koch, “Suppression of carrier recombination in semiconductor lasers by phase-space filling,” Appl. Phys. Lett.87(20), 201112 (2005). [CrossRef]
  13. A. David and N. F. Gardner, “Droop in III-nitrides: comparison of bulk and injection contributions,” Appl. Phys. Lett.97(19), 193508 (2010). [CrossRef]
  14. S. Grzanka, P. Perlin, R. Czernecki, L. Marona, M. Bockowski, B. Lucznik, M. Leszczynski, and T. Suski, “Effect of efficiency “droop” in violet and blue InGaN laser diodes,” Appl. Phys. Lett.95(7), 071108 (2009). [CrossRef]
  15. J. Mickevičius, M. S. Shur, R. S. Q. Fareed, J. P. Zhang, R. Gaska, and G. Tamulaitis, “Time-resolved experimental study of carrier lifetime in GaN epilayers,” Appl. Phys. Lett.87(24), 241918 (2005). [CrossRef]

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