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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 23 — Nov. 5, 2012
  • pp: 25513–25519

Engineering heavily doped silicon for broadband absorber in the terahertz regime

Mingbo Pu, Min Wang, Chenggang Hu, Cheng Huang, Zeyu Zhao, Yanqin Wang, and Xiangang Luo  »View Author Affiliations

Optics Express, Vol. 20, Issue 23, pp. 25513-25519 (2012)

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Highly efficient absorber is of particular importance in terahertz regime as naturally occurring materials with frequency-selective absorption in this frequency band is difficult to find. Here we present the design and characterization of a broadband terahertz absorber based on heavily Boron-doped silicon (0.7676 Ω cm) grating. It is numerically demonstrated by utilizing both the zero- and first order diffraction in the doped silicon wafer, relative absorption bandwidth larger than 100% can be achieved. Furthermore, the design can be easily extended to higher frequencies as the optical property of doped silicon is tunable through changing the doping concentration.

© 2012 OSA

OCIS Codes
(160.3918) Materials : Metamaterials
(050.6624) Diffraction and gratings : Subwavelength structures

ToC Category:

Original Manuscript: August 27, 2012
Revised Manuscript: September 21, 2012
Manuscript Accepted: October 4, 2012
Published: October 25, 2012

Mingbo Pu, Min Wang, Chenggang Hu, Cheng Huang, Zeyu Zhao, Yanqin Wang, and Xiangang Luo, "Engineering heavily doped silicon for broadband absorber in the terahertz regime," Opt. Express 20, 25513-25519 (2012)

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