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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 26 — Dec. 10, 2012
  • pp: B315–B321

1.3 μm InAs/GaAs quantum dot lasers on Si rib structures with current injection across direct-bonded GaAs/Si heterointerfaces

Katsuaki Tanabe, Katsuyuki Watanabe, and Yasuhiko Arakawa  »View Author Affiliations

Optics Express, Vol. 20, Issue 26, pp. B315-B321 (2012)

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An InAs/GaAs quantum dot laser on a Si rib structure has been demonstrated. The double heterostructure laser structure grown on a GaAs substrate is layer-transferred onto a patterned Si substrate by GaAs/Si direct wafer bonding without oxide or metal mediation. This Fabry-Perot laser operates with current injection through the GaAs/Si rib interface and exhibits InAs quantum dot ground state lasing at 1.28 μm at room temperature, with a threshold current density of 480 A cm−2.

© 2012 OSA

OCIS Codes
(040.6040) Detectors : Silicon
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(250.5300) Optoelectronics : Photonic integrated circuits
(250.5960) Optoelectronics : Semiconductor lasers

ToC Category:
Waveguide and Optoelectronic Devices

Original Manuscript: October 1, 2012
Revised Manuscript: October 30, 2012
Manuscript Accepted: October 30, 2012
Published: November 29, 2012

Virtual Issues
European Conference on Optical Communication 2012 (2012) Optics Express

Katsuaki Tanabe, Katsuyuki Watanabe, and Yasuhiko Arakawa, "1.3 μm InAs/GaAs quantum dot lasers on Si rib structures with current injection across direct-bonded GaAs/Si heterointerfaces," Opt. Express 20, B315-B321 (2012)

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  1. D. A. B. Miller, “Rationale and challenges for optical interconnects to electric chips,” Proc. IEEE88(6), 728–749 (2000). [CrossRef]
  2. Y. Urino, T. Shimizu, M. Okano, N. Hatori, M. Ishizaka, T. Yamamoto, T. Baba, T. Akagawa, S. Akiyama, T. Usuki, D. Okamoto, M. Miura, M. Noguchi, J. Fujikata, D. Shimura, H. Okayama, T. Tsuchizawa, T. Watanabe, K. Yamada, S. Itabashi, E. Saito, T. Nakamura, and Y. Arakawa, “First demonstration of high density optical interconnects integrated with lasers, optical modulators, and photodetectors on single silicon substrate,” Opt. Express19(26), B159–B165 (2011). [CrossRef] [PubMed]
  3. Y. Arakawa and H. Sakaki, “Multidimensional quantum well laser and temperature dependence of its threshold current,” Appl. Phys. Lett.40(11), 939–941 (1982). [CrossRef]
  4. Z. Mi, J. Yang, P. Bhattacharya, and D. L. Huffaker, “Self-organised quantum dots as dislocation filters: the case of GaAs-based lasers on silicon,” Electron. Lett.42(2), 121–122 (2006). [CrossRef]
  5. T. Wang, H. Liu, A. Lee, F. Pozzi, and A. Seeds, “1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates,” Opt. Express19(12), 11381–11386 (2011). [CrossRef] [PubMed]
  6. H. Kroemer, T.-Y. Liu, and P. M. Petroff, “GaAs on Si and related systems: Problems and prospects,” J. Cryst. Growth95(1-4), 96–102 (1989). [CrossRef]
  7. M. Sugo, Y. Takanashi, M. M. Al-Jassim, and M. Yamaguchi, “Heteroepitaxial growth and characterization of InP on Si substrates,” J. Appl. Phys.68(2), 540–547 (1990). [CrossRef]
  8. Q.-Y. Tong and U. Gosele, Semiconductor wafer bonding: Science and technology (Wiley, New Jersey, 1998).
  9. K. Tanabe, K. Watanabe, and Y. Arakawa, “III-V/Si hybrid photonic devices by direct fusion bonding,” Nat. Sci. Rep.2, 349 (2012). [CrossRef] [PubMed]
  10. A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express14(20), 9203–9210 (2006). [CrossRef] [PubMed]
  11. J. Van Campenhout, P. Rojo Romeo, P. Regreny, C. Seassal, D. Van Thourhout, S. Verstuyft, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, and R. Baets, “Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit,” Opt. Express15(11), 6744–6749 (2007). [CrossRef] [PubMed]
  12. S. Palit, J. Kirch, G. Tsvid, L. Mawst, T. Kuech, and N. M. Jokerst, “Low-threshold thin-film III-V lasers bonded to silicon with front and back side defined features,” Opt. Lett.34(18), 2802–2804 (2009). [CrossRef] [PubMed]
  13. K. Tanabe, S. Iwamoto, and Y. Arakawa, “Novel III-V/Si hybrid laser structures with current injection across conductive wafer-bonded heterointerfaces: A proposal and analysis,” IEICE Electron. Express8(8), 596–603 (2011). [CrossRef]
  14. T. Kageyama, K. Nishi, M. Yamaguchi, R. Machida, Y. Maeda, K. Takemasa, Y. Tanaka, T. Yamamoto, M. Sugawara, and Y. Arakawa, “Extremely high temperature (220 °C) continuous-wave operation of 1300-nm-range quantum-dot lasers,” in CLEO/Europe and EQEC 2011 Conference Digest (Optical Society of America), paper PDA_1 (2011).
  15. K. Tanabe, M. Nomura, D. Guimard, S. Iwamoto, and Y. Arakawa, “Room temperature continuous wave operation of InAs/GaAs quantum dot photonic crystal nanocavity laser on silicon substrate,” Opt. Express17(9), 7036–7042 (2009). [CrossRef] [PubMed]
  16. E. E. L. Friedrich, M. G. Oberg, B. Broberg, S. Nilsson, and S. Valette, “Hybrid integration of semiconductor lasers with Si-based single-mode ridge waveguides,” J. Lightwave Technol.10(3), 336–340 (1992). [CrossRef]
  17. K. Kato and Y. Tohmori, “PLC hybrid integration technology and its application to photonic components,” IEEE J. Sel. Top. Quantum Electron.6(1), 4–13 (2000). [CrossRef]

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