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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 27 — Dec. 17, 2012
  • pp: 28009–28016

Demonstration of electrooptic modulation at 2165nm using a silicon Mach-Zehnder interferometer

Mackenzie A. Van Camp, Solomon Assefa, Douglas M. Gill, Tymon Barwicz, Steven M. Shank, Philip M. Rice, Teya Topuria, and William M. J. Green  »View Author Affiliations

Optics Express, Vol. 20, Issue 27, pp. 28009-28016 (2012)

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We demonstrate electrooptic modulation at a wavelength of 2165nm, using a free-carrier injection-based silicon Mach-Zehnder modulator. The modulator has a Vπ∙L figure of merit of 0.12V∙mm, and an extinction ratio of −23dB. Optical modulation experiments are performed at bitrates up to 3Gbps. Our results illustrate that optical modulator design methodologies previously developed for telecom-band devices can be successfully applied to produce high-performance devices for a silicon nanophotonic mid-infrared integrated circuit platform.

© 2012 OSA

OCIS Codes
(250.5300) Optoelectronics : Photonic integrated circuits
(250.7360) Optoelectronics : Waveguide modulators

ToC Category:

Original Manuscript: September 17, 2012
Revised Manuscript: November 19, 2012
Manuscript Accepted: November 19, 2012
Published: December 3, 2012

Mackenzie A. Van Camp, Solomon Assefa, Douglas M. Gill, Tymon Barwicz, Steven M. Shank, Philip M. Rice, Teya Topuria, and William M. J. Green, "Demonstration of electrooptic modulation at 2165nm using a silicon Mach-Zehnder interferometer," Opt. Express 20, 28009-28016 (2012)

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