An Si/III–V hybrid laser oscillating at a single wavelength was developed for use in a large-scale Si optical I/O chip. The laser had an InP-based reflective semiconductor optical amplifier (SOA) chip integrated with an Si wavelength-selection-mirror chip in a flip-chip configuration. A low coupling loss of 1.55 dB at the Si-SOA interface was accomplished by both mode-field-matching between Si-SOA waveguides and accurately controlling the bonding position. The fabricated Si hybrid laser exhibited a very low threshold current of 9.4 mA, a high output power of 15.0 mW, and a high wall-plug efficiency of 7.6% at 20 °C. Moreover, the device maintained a high output power of >10 mW up to 60°C due to the high thermal conductance between the SOA chip and Si substrate. The short cavity length of the flip-chip bonded laser expanded the longitudinal mode spacing. This resulted in temperature-stable single longitudinal mode lasing and a low RIN level of <−130 dB/Hz.

© 2012 OSA

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5. M. Sysak, D. Liang, R. Jones, G. Kurczveil, M. Piels, M. Fiorentino, R. Beausoleil, and J. Bowers, “Hybrid silicon laser technology: A thermal perspective,” IEEE J. of Sel. Topics in Quantum Electron.1–9 (2011).
6. H. Park, M. Sysak, H. Chen, A. Fang, D. Liang, L. Liao, B. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. of Sel. Topics in Quantum Electron.1–18 (2011).
7. X. Sun, A. Zadok, M. Shearn, K. Diest, A. Ghaffari, H. Atwater, A. Scherer, and A. Yariv, “Hybrid electrically pumped evanescent Si/InGaAsP lasers,” in proc. of Optical Fiber Communication Conference (OFC2009) OThN1.
8. B. Ben Bakir, A. Descos, N. Olivier, D. Bordel, P. Grosse, J. Gentner, F. Lelarge, and J. Fedeli, “Hybrid Si/III–V lasers with adiabatic coupling,” in proc. of Group IV Photonics (IEEE GFP2011) 169–171.
9. N. Fujioka, T. Chu, and M. Ishizaka, “Compact and low power consumption hybrid integrated wavelength tunable laser module using silicon waveguide resonators,” J. of Lightwave Technol.28, 3115–3120 (2010).
10. T. Shimizu, N. Hatori, M. Okano, M. Ishizaka, Y. Urino, T. Yamamoto, M. Mori, T. Nakamura, and Y. Arakawa, “High density hybrid integrated light source with a laser diode array on a silicon optical waveguide platform for inter-chip optical interconnection,” in proc. of Group IV Photonics (IEEE GFP2011) 181–183.
11. T. Okumura, T. Maruyama, H. Yonezawa, N. Nishiyama, and S. Arai, “Injection-type GaInAsP–InP–Si distributed-feedback laser directly bonded on silicon-on-insulator substrate,” IEEE Photon. Technol. Lett.21, 283–285 (2009). [CrossRef]
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Communications Magazine IEEE

• Y. Vlasov, “Silicon CMOS-integrated nano-photonics for computer and data communications beyond 100G,” Communications Magazine IEEE50, s67–s72 (2012). [CrossRef]

IEEE J. of Quantum Electron.

• S. Tanaka, S. Jeong, S. Yamazaki, A. Uetake, S. Tomabechi, M. Ekawa, and K. Morito, “Monolithically integrated 8: 1 SOA gate switch with large extinction ratio and wide input power dynamic range,” IEEE J. of Quantum Electron.45, 1155–1162 (2009). [CrossRef]
• M. Yamada, “Transverse and longitudinal mode control in semiconductor injection lasers,” IEEE J. of Quantum Electron.19, 1365–1380 (1983). [CrossRef]

IEEE J. of Sel. Topics in Quantum Electron.

• T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, “Microphotonics devices based on silicon microfabrication technology,” IEEE J. of Sel. Topics in Quantum Electron.11, 232–240 (2005). [CrossRef]
• B. Jalali, V. Raghunathan, D. Dimitropoulos, and O. Boyraz, “Raman-based silicon photonics,” IEEE J. of Sel. Topics in Quantum Electron.12, 412–421 (2006). [CrossRef]
• M. Sysak, D. Liang, R. Jones, G. Kurczveil, M. Piels, M. Fiorentino, R. Beausoleil, and J. Bowers, “Hybrid silicon laser technology: A thermal perspective,” IEEE J. of Sel. Topics in Quantum Electron.1–9 (2011).
• H. Park, M. Sysak, H. Chen, A. Fang, D. Liang, L. Liao, B. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. of Sel. Topics in Quantum Electron.1–18 (2011).

IEEE Photon. Technol. Lett.

• T. Okumura, T. Maruyama, H. Yonezawa, N. Nishiyama, and S. Arai, “Injection-type GaInAsP–InP–Si distributed-feedback laser directly bonded on silicon-on-insulator substrate,” IEEE Photon. Technol. Lett.21, 283–285 (2009). [CrossRef]

J. of Lightwave Technol.

• N. Fujioka, T. Chu, and M. Ishizaka, “Compact and low power consumption hybrid integrated wavelength tunable laser module using silicon waveguide resonators,” J. of Lightwave Technol.28, 3115–3120 (2010).

Opt. Express

• K. Ohira, K. Kobayashi, N. Iizuka, H. Yoshida, M. Ezaki, H. Uemura, A. Kojima, K. Nakamura, H. Furuyama, and H. Shibata, “On-chip optical interconnection by using integrated III–V laser diode and photodetector with silicon waveguide,” Opt. Express18, 15440–15447 (2010). [CrossRef] [PubMed]

Proceedings of the IEEE

• A. Krishnamoorthy, R. Ho, X. Zheng, H. Schwetman, J. Lexau, P. Koka, G. Li, I. Shubin, and J. Cunningham, “Computer systems based on silicon photonic interconnects,” Proceedings of the IEEE97, 1337–1361 (2009). [CrossRef]

Other

• S. Tanaka, S. Jeong, S. Sekiguchi, T. Kurahashi, Y. Tanaka, and K. Morito, “Highly-efficient, low-noise Si hybrid laser using flip-chip bonded SOA,” in proc. of Optical Interconnects Conference (IEEE OIC2012) MB2.
• G. Yoffe, T. Nguyen, J. Heanue, and B. Pezeshki, “Efficient compact tunable laser for access networks using silicon ring resonators,” in proc. of Optical Fiber Communication Conference (OFC2012) OW1G4.
• A. J. Zilkie, B. J. Bijlani, P. Seddighian, D. C. Lee, W. Qian, J. Fong, R. Shafiiha, D. Feng, B. J. Luff, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-efficiency hybrid III–V/Si external cavity DBR laser for 3-m SOI waveguides,” in proc. of Group IV Photonics (IEEE GFP2012) paper FA3.
• S. Akiyama, T. Kurahashi, T. Baba, N. Hatori, T. Usuki, and T. Yamamoto, “1-Vpp 10-Gb/s operation of slow-light silicon mach-zehnder modulator in wavelength range of 1 nm,” in proc. of Group IV Photonics (IEEE GFP2010) 45–47.
• S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, and K. Morito, “Hybrid laser with Si ring resonator and SOA for temperature control free operation with ring resonator-based modulator,” in proc. of Group IV Photonics (IEEE GFP2011) 172–174.
• S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, T. Akiyama, Y. Tanaka, and K. Morito, “Silicon-wire waveguide based external cavity laser for mW-order output power and temperature control free operation with silicon ring modulator,” Japan. J. of Appl. Phys.in press (2012).
• T. Shimizu, N. Hatori, M. Okano, M. Ishizaka, Y. Urino, T. Yamamoto, M. Mori, T. Nakamura, and Y. Arakawa, “High density hybrid integrated light source with a laser diode array on a silicon optical waveguide platform for inter-chip optical interconnection,” in proc. of Group IV Photonics (IEEE GFP2011) 181–183.
• J. Michel, R. Camacho-Aguilera, Y. Cai, N. Patel, J. Bessette, M. Romagnoli, R. Dutt, and L. Kimerling, “An electrically pumped Ge-on-Si laser,” in proc. of Optical Fiber Communication Conference (OFC2012) PDP5A.6.
• X. Sun, A. Zadok, M. Shearn, K. Diest, A. Ghaffari, H. Atwater, A. Scherer, and A. Yariv, “Hybrid electrically pumped evanescent Si/InGaAsP lasers,” in proc. of Optical Fiber Communication Conference (OFC2009) OThN1.
• B. Ben Bakir, A. Descos, N. Olivier, D. Bordel, P. Grosse, J. Gentner, F. Lelarge, and J. Fedeli, “Hybrid Si/III–V lasers with adiabatic coupling,” in proc. of Group IV Photonics (IEEE GFP2011) 169–171.

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