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High-output-power, single-wavelength silicon hybrid laser using precise flip-chip bonding technologyShinsuke Tanaka, Seok-Hwan Jeong, Shigeaki Sekiguchi, Teruo Kurahashi, Yu Tanaka, and Ken Morito »View Author Affiliations
Shinsuke Tanaka,^{*}
Seok-Hwan Jeong,
Shigeaki Sekiguchi,
Teruo Kurahashi,
Yu Tanaka,
and Ken Morito
^{}Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0197, Japan ^{*}Corresponding author: shin-tanaka@jp.fujitsu.com |
Optics Express, Vol. 20, Issue 27, pp. 28057-28069 (2012)
http://dx.doi.org/10.1364/OE.20.028057
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Abstract
An Si/III–V hybrid laser oscillating at a single wavelength was developed for use in a large-scale Si optical I/O chip. The laser had an InP-based reflective semiconductor optical amplifier (SOA) chip integrated with an Si wavelength-selection-mirror chip in a flip-chip configuration. A low coupling loss of 1.55 dB at the Si-SOA interface was accomplished by both mode-field-matching between Si-SOA waveguides and accurately controlling the bonding position. The fabricated Si hybrid laser exhibited a very low threshold current of 9.4 mA, a high output power of 15.0 mW, and a high wall-plug efficiency of 7.6% at 20 °C. Moreover, the device maintained a high output power of >10 mW up to 60°C due to the high thermal conductance between the SOA chip and Si substrate. The short cavity length of the flip-chip bonded laser expanded the longitudinal mode spacing. This resulted in temperature-stable single longitudinal mode lasing and a low RIN level of <−130 dB/Hz.
© 2012 OSA
OCIS Codes
(250.5300) Optoelectronics : Photonic integrated circuits
(250.5960) Optoelectronics : Semiconductor lasers
ToC Category:
Optoelectronics
History
Original Manuscript: September 5, 2012
Revised Manuscript: October 12, 2012
Manuscript Accepted: October 17, 2012
Published: December 4, 2012
Citation
Shinsuke Tanaka, Seok-Hwan Jeong, Shigeaki Sekiguchi, Teruo Kurahashi, Yu Tanaka, and Ken Morito, "High-output-power, single-wavelength silicon hybrid laser using precise flip-chip bonding technology," Opt. Express 20, 28057-28069 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-27-28057
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References
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- N. Fujioka, T. Chu, and M. Ishizaka, “Compact and low power consumption hybrid integrated wavelength tunable laser module using silicon waveguide resonators,” J. of Lightwave Technol.28, 3115–3120 (2010).
- T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, “Microphotonics devices based on silicon microfabrication technology,” IEEE J. of Sel. Topics in Quantum Electron.11, 232–240 (2005). [CrossRef]
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- T. Shimizu, N. Hatori, M. Okano, M. Ishizaka, Y. Urino, T. Yamamoto, M. Mori, T. Nakamura, and Y. Arakawa, “High density hybrid integrated light source with a laser diode array on a silicon optical waveguide platform for inter-chip optical interconnection,” in proc. of Group IV Photonics (IEEE GFP2011) 181–183.
- S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, T. Akiyama, Y. Tanaka, and K. Morito, “Silicon-wire waveguide based external cavity laser for mW-order output power and temperature control free operation with silicon ring modulator,” Japan. J. of Appl. Phys.in press (2012).
- S. Akiyama, T. Kurahashi, T. Baba, N. Hatori, T. Usuki, and T. Yamamoto, “1-Vpp 10-Gb/s operation of slow-light silicon mach-zehnder modulator in wavelength range of 1 nm,” in proc. of Group IV Photonics (IEEE GFP2010) 45–47.
- S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, and K. Morito, “Hybrid laser with Si ring resonator and SOA for temperature control free operation with ring resonator-based modulator,” in proc. of Group IV Photonics (IEEE GFP2011) 172–174.
- G. Yoffe, T. Nguyen, J. Heanue, and B. Pezeshki, “Efficient compact tunable laser for access networks using silicon ring resonators,” in proc. of Optical Fiber Communication Conference (OFC2012) OW1G4.
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- T. Shimizu, N. Hatori, M. Okano, M. Ishizaka, Y. Urino, T. Yamamoto, M. Mori, T. Nakamura, and Y. Arakawa, “High density hybrid integrated light source with a laser diode array on a silicon optical waveguide platform for inter-chip optical interconnection,” in proc. of Group IV Photonics (IEEE GFP2011) 181–183.
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- H. Park, M. Sysak, H. Chen, A. Fang, D. Liang, L. Liao, B. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. of Sel. Topics in Quantum Electron.1–18 (2011).
- B. Jalali, V. Raghunathan, D. Dimitropoulos, and O. Boyraz, “Raman-based silicon photonics,” IEEE J. of Sel. Topics in Quantum Electron.12, 412–421 (2006). [CrossRef]
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- S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, T. Akiyama, Y. Tanaka, and K. Morito, “Silicon-wire waveguide based external cavity laser for mW-order output power and temperature control free operation with silicon ring modulator,” Japan. J. of Appl. Phys.in press (2012).
- S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, and K. Morito, “Hybrid laser with Si ring resonator and SOA for temperature control free operation with ring resonator-based modulator,” in proc. of Group IV Photonics (IEEE GFP2011) 172–174.
- S. Tanaka, S. Jeong, S. Sekiguchi, T. Kurahashi, Y. Tanaka, and K. Morito, “Highly-efficient, low-noise Si hybrid laser using flip-chip bonded SOA,” in proc. of Optical Interconnects Conference (IEEE OIC2012) MB2.
- M. Sysak, D. Liang, R. Jones, G. Kurczveil, M. Piels, M. Fiorentino, R. Beausoleil, and J. Bowers, “Hybrid silicon laser technology: A thermal perspective,” IEEE J. of Sel. Topics in Quantum Electron.1–9 (2011).
- H. Park, M. Sysak, H. Chen, A. Fang, D. Liang, L. Liao, B. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. of Sel. Topics in Quantum Electron.1–18 (2011).
- J. Michel, R. Camacho-Aguilera, Y. Cai, N. Patel, J. Bessette, M. Romagnoli, R. Dutt, and L. Kimerling, “An electrically pumped Ge-on-Si laser,” in proc. of Optical Fiber Communication Conference (OFC2012) PDP5A.6.
- H. Park, M. Sysak, H. Chen, A. Fang, D. Liang, L. Liao, B. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. of Sel. Topics in Quantum Electron.1–18 (2011).
- A. Krishnamoorthy, R. Ho, X. Zheng, H. Schwetman, J. Lexau, P. Koka, G. Li, I. Shubin, and J. Cunningham, “Computer systems based on silicon photonic interconnects,” Proceedings of the IEEE97, 1337–1361 (2009). [CrossRef]
- A. Krishnamoorthy, R. Ho, X. Zheng, H. Schwetman, J. Lexau, P. Koka, G. Li, I. Shubin, and J. Cunningham, “Computer systems based on silicon photonic interconnects,” Proceedings of the IEEE97, 1337–1361 (2009). [CrossRef]
- A. J. Zilkie, B. J. Bijlani, P. Seddighian, D. C. Lee, W. Qian, J. Fong, R. Shafiiha, D. Feng, B. J. Luff, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-efficiency hybrid III–V/Si external cavity DBR laser for 3-m SOI waveguides,” in proc. of Group IV Photonics (IEEE GFP2012) paper FA3.
- S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, and K. Morito, “Hybrid laser with Si ring resonator and SOA for temperature control free operation with ring resonator-based modulator,” in proc. of Group IV Photonics (IEEE GFP2011) 172–174.
- S. Akiyama, T. Kurahashi, T. Baba, N. Hatori, T. Usuki, and T. Yamamoto, “1-Vpp 10-Gb/s operation of slow-light silicon mach-zehnder modulator in wavelength range of 1 nm,” in proc. of Group IV Photonics (IEEE GFP2010) 45–47.
- S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, T. Akiyama, Y. Tanaka, and K. Morito, “Silicon-wire waveguide based external cavity laser for mW-order output power and temperature control free operation with silicon ring modulator,” Japan. J. of Appl. Phys.in press (2012).
- S. Tanaka, S. Jeong, S. Sekiguchi, T. Kurahashi, Y. Tanaka, and K. Morito, “Highly-efficient, low-noise Si hybrid laser using flip-chip bonded SOA,” in proc. of Optical Interconnects Conference (IEEE OIC2012) MB2.
- M. Sysak, D. Liang, R. Jones, G. Kurczveil, M. Piels, M. Fiorentino, R. Beausoleil, and J. Bowers, “Hybrid silicon laser technology: A thermal perspective,” IEEE J. of Sel. Topics in Quantum Electron.1–9 (2011).
- A. J. Zilkie, B. J. Bijlani, P. Seddighian, D. C. Lee, W. Qian, J. Fong, R. Shafiiha, D. Feng, B. J. Luff, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-efficiency hybrid III–V/Si external cavity DBR laser for 3-m SOI waveguides,” in proc. of Group IV Photonics (IEEE GFP2012) paper FA3.
- B. Ben Bakir, A. Descos, N. Olivier, D. Bordel, P. Grosse, J. Gentner, F. Lelarge, and J. Fedeli, “Hybrid Si/III–V lasers with adiabatic coupling,” in proc. of Group IV Photonics (IEEE GFP2011) 169–171.
- A. Krishnamoorthy, R. Ho, X. Zheng, H. Schwetman, J. Lexau, P. Koka, G. Li, I. Shubin, and J. Cunningham, “Computer systems based on silicon photonic interconnects,” Proceedings of the IEEE97, 1337–1361 (2009). [CrossRef]
- A. Krishnamoorthy, R. Ho, X. Zheng, H. Schwetman, J. Lexau, P. Koka, G. Li, I. Shubin, and J. Cunningham, “Computer systems based on silicon photonic interconnects,” Proceedings of the IEEE97, 1337–1361 (2009). [CrossRef]
- M. Sysak, D. Liang, R. Jones, G. Kurczveil, M. Piels, M. Fiorentino, R. Beausoleil, and J. Bowers, “Hybrid silicon laser technology: A thermal perspective,” IEEE J. of Sel. Topics in Quantum Electron.1–9 (2011).
- H. Park, M. Sysak, H. Chen, A. Fang, D. Liang, L. Liao, B. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. of Sel. Topics in Quantum Electron.1–18 (2011).
- H. Park, M. Sysak, H. Chen, A. Fang, D. Liang, L. Liao, B. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. of Sel. Topics in Quantum Electron.1–18 (2011).
- A. J. Zilkie, B. J. Bijlani, P. Seddighian, D. C. Lee, W. Qian, J. Fong, R. Shafiiha, D. Feng, B. J. Luff, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-efficiency hybrid III–V/Si external cavity DBR laser for 3-m SOI waveguides,” in proc. of Group IV Photonics (IEEE GFP2012) paper FA3.
- T. Okumura, T. Maruyama, H. Yonezawa, N. Nishiyama, and S. Arai, “Injection-type GaInAsP–InP–Si distributed-feedback laser directly bonded on silicon-on-insulator substrate,” IEEE Photon. Technol. Lett.21, 283–285 (2009). [CrossRef]
- J. Michel, R. Camacho-Aguilera, Y. Cai, N. Patel, J. Bessette, M. Romagnoli, R. Dutt, and L. Kimerling, “An electrically pumped Ge-on-Si laser,” in proc. of Optical Fiber Communication Conference (OFC2012) PDP5A.6.
- T. Shimizu, N. Hatori, M. Okano, M. Ishizaka, Y. Urino, T. Yamamoto, M. Mori, T. Nakamura, and Y. Arakawa, “High density hybrid integrated light source with a laser diode array on a silicon optical waveguide platform for inter-chip optical interconnection,” in proc. of Group IV Photonics (IEEE GFP2011) 181–183.
- T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, “Microphotonics devices based on silicon microfabrication technology,” IEEE J. of Sel. Topics in Quantum Electron.11, 232–240 (2005). [CrossRef]
- S. Tanaka, S. Jeong, S. Yamazaki, A. Uetake, S. Tomabechi, M. Ekawa, and K. Morito, “Monolithically integrated 8: 1 SOA gate switch with large extinction ratio and wide input power dynamic range,” IEEE J. of Quantum Electron.45, 1155–1162 (2009). [CrossRef]
- S. Tanaka, S. Jeong, S. Sekiguchi, T. Kurahashi, Y. Tanaka, and K. Morito, “Highly-efficient, low-noise Si hybrid laser using flip-chip bonded SOA,” in proc. of Optical Interconnects Conference (IEEE OIC2012) MB2.
- S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, T. Akiyama, Y. Tanaka, and K. Morito, “Silicon-wire waveguide based external cavity laser for mW-order output power and temperature control free operation with silicon ring modulator,” Japan. J. of Appl. Phys.in press (2012).
- S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, and K. Morito, “Hybrid laser with Si ring resonator and SOA for temperature control free operation with ring resonator-based modulator,” in proc. of Group IV Photonics (IEEE GFP2011) 172–174.
- T. Shimizu, N. Hatori, M. Okano, M. Ishizaka, Y. Urino, T. Yamamoto, M. Mori, T. Nakamura, and Y. Arakawa, “High density hybrid integrated light source with a laser diode array on a silicon optical waveguide platform for inter-chip optical interconnection,” in proc. of Group IV Photonics (IEEE GFP2011) 181–183.
- G. Yoffe, T. Nguyen, J. Heanue, and B. Pezeshki, “Efficient compact tunable laser for access networks using silicon ring resonators,” in proc. of Optical Fiber Communication Conference (OFC2012) OW1G4.
- T. Okumura, T. Maruyama, H. Yonezawa, N. Nishiyama, and S. Arai, “Injection-type GaInAsP–InP–Si distributed-feedback laser directly bonded on silicon-on-insulator substrate,” IEEE Photon. Technol. Lett.21, 283–285 (2009). [CrossRef]
- T. Shimizu, N. Hatori, M. Okano, M. Ishizaka, Y. Urino, T. Yamamoto, M. Mori, T. Nakamura, and Y. Arakawa, “High density hybrid integrated light source with a laser diode array on a silicon optical waveguide platform for inter-chip optical interconnection,” in proc. of Group IV Photonics (IEEE GFP2011) 181–183.
- T. Okumura, T. Maruyama, H. Yonezawa, N. Nishiyama, and S. Arai, “Injection-type GaInAsP–InP–Si distributed-feedback laser directly bonded on silicon-on-insulator substrate,” IEEE Photon. Technol. Lett.21, 283–285 (2009). [CrossRef]
- B. Ben Bakir, A. Descos, N. Olivier, D. Bordel, P. Grosse, J. Gentner, F. Lelarge, and J. Fedeli, “Hybrid Si/III–V lasers with adiabatic coupling,” in proc. of Group IV Photonics (IEEE GFP2011) 169–171.
- H. Park, M. Sysak, H. Chen, A. Fang, D. Liang, L. Liao, B. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. of Sel. Topics in Quantum Electron.1–18 (2011).
- J. Michel, R. Camacho-Aguilera, Y. Cai, N. Patel, J. Bessette, M. Romagnoli, R. Dutt, and L. Kimerling, “An electrically pumped Ge-on-Si laser,” in proc. of Optical Fiber Communication Conference (OFC2012) PDP5A.6.
- G. Yoffe, T. Nguyen, J. Heanue, and B. Pezeshki, “Efficient compact tunable laser for access networks using silicon ring resonators,” in proc. of Optical Fiber Communication Conference (OFC2012) OW1G4.
- M. Sysak, D. Liang, R. Jones, G. Kurczveil, M. Piels, M. Fiorentino, R. Beausoleil, and J. Bowers, “Hybrid silicon laser technology: A thermal perspective,” IEEE J. of Sel. Topics in Quantum Electron.1–9 (2011).
- A. J. Zilkie, B. J. Bijlani, P. Seddighian, D. C. Lee, W. Qian, J. Fong, R. Shafiiha, D. Feng, B. J. Luff, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-efficiency hybrid III–V/Si external cavity DBR laser for 3-m SOI waveguides,” in proc. of Group IV Photonics (IEEE GFP2012) paper FA3.
- B. Jalali, V. Raghunathan, D. Dimitropoulos, and O. Boyraz, “Raman-based silicon photonics,” IEEE J. of Sel. Topics in Quantum Electron.12, 412–421 (2006). [CrossRef]
- J. Michel, R. Camacho-Aguilera, Y. Cai, N. Patel, J. Bessette, M. Romagnoli, R. Dutt, and L. Kimerling, “An electrically pumped Ge-on-Si laser,” in proc. of Optical Fiber Communication Conference (OFC2012) PDP5A.6.
- X. Sun, A. Zadok, M. Shearn, K. Diest, A. Ghaffari, H. Atwater, A. Scherer, and A. Yariv, “Hybrid electrically pumped evanescent Si/InGaAsP lasers,” in proc. of Optical Fiber Communication Conference (OFC2009) OThN1.
- A. Krishnamoorthy, R. Ho, X. Zheng, H. Schwetman, J. Lexau, P. Koka, G. Li, I. Shubin, and J. Cunningham, “Computer systems based on silicon photonic interconnects,” Proceedings of the IEEE97, 1337–1361 (2009). [CrossRef]
- A. J. Zilkie, B. J. Bijlani, P. Seddighian, D. C. Lee, W. Qian, J. Fong, R. Shafiiha, D. Feng, B. J. Luff, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-efficiency hybrid III–V/Si external cavity DBR laser for 3-m SOI waveguides,” in proc. of Group IV Photonics (IEEE GFP2012) paper FA3.
- S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, and K. Morito, “Hybrid laser with Si ring resonator and SOA for temperature control free operation with ring resonator-based modulator,” in proc. of Group IV Photonics (IEEE GFP2011) 172–174.
- S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, T. Akiyama, Y. Tanaka, and K. Morito, “Silicon-wire waveguide based external cavity laser for mW-order output power and temperature control free operation with silicon ring modulator,” Japan. J. of Appl. Phys.in press (2012).
- S. Tanaka, S. Jeong, S. Sekiguchi, T. Kurahashi, Y. Tanaka, and K. Morito, “Highly-efficient, low-noise Si hybrid laser using flip-chip bonded SOA,” in proc. of Optical Interconnects Conference (IEEE OIC2012) MB2.
- A. J. Zilkie, B. J. Bijlani, P. Seddighian, D. C. Lee, W. Qian, J. Fong, R. Shafiiha, D. Feng, B. J. Luff, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-efficiency hybrid III–V/Si external cavity DBR laser for 3-m SOI waveguides,” in proc. of Group IV Photonics (IEEE GFP2012) paper FA3.
- X. Sun, A. Zadok, M. Shearn, K. Diest, A. Ghaffari, H. Atwater, A. Scherer, and A. Yariv, “Hybrid electrically pumped evanescent Si/InGaAsP lasers,” in proc. of Optical Fiber Communication Conference (OFC2009) OThN1.
- T. Shimizu, N. Hatori, M. Okano, M. Ishizaka, Y. Urino, T. Yamamoto, M. Mori, T. Nakamura, and Y. Arakawa, “High density hybrid integrated light source with a laser diode array on a silicon optical waveguide platform for inter-chip optical interconnection,” in proc. of Group IV Photonics (IEEE GFP2011) 181–183.
- T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, “Microphotonics devices based on silicon microfabrication technology,” IEEE J. of Sel. Topics in Quantum Electron.11, 232–240 (2005). [CrossRef]
- A. Krishnamoorthy, R. Ho, X. Zheng, H. Schwetman, J. Lexau, P. Koka, G. Li, I. Shubin, and J. Cunningham, “Computer systems based on silicon photonic interconnects,” Proceedings of the IEEE97, 1337–1361 (2009). [CrossRef]
- X. Sun, A. Zadok, M. Shearn, K. Diest, A. Ghaffari, H. Atwater, A. Scherer, and A. Yariv, “Hybrid electrically pumped evanescent Si/InGaAsP lasers,” in proc. of Optical Fiber Communication Conference (OFC2009) OThN1.
- M. Sysak, D. Liang, R. Jones, G. Kurczveil, M. Piels, M. Fiorentino, R. Beausoleil, and J. Bowers, “Hybrid silicon laser technology: A thermal perspective,” IEEE J. of Sel. Topics in Quantum Electron.1–9 (2011).
- H. Park, M. Sysak, H. Chen, A. Fang, D. Liang, L. Liao, B. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. of Sel. Topics in Quantum Electron.1–18 (2011).
- T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, “Microphotonics devices based on silicon microfabrication technology,” IEEE J. of Sel. Topics in Quantum Electron.11, 232–240 (2005). [CrossRef]
- T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, “Microphotonics devices based on silicon microfabrication technology,” IEEE J. of Sel. Topics in Quantum Electron.11, 232–240 (2005). [CrossRef]
- T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, “Microphotonics devices based on silicon microfabrication technology,” IEEE J. of Sel. Topics in Quantum Electron.11, 232–240 (2005). [CrossRef]
- S. Tanaka, S. Jeong, S. Yamazaki, A. Uetake, S. Tomabechi, M. Ekawa, and K. Morito, “Monolithically integrated 8: 1 SOA gate switch with large extinction ratio and wide input power dynamic range,” IEEE J. of Quantum Electron.45, 1155–1162 (2009). [CrossRef]
- S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, T. Akiyama, Y. Tanaka, and K. Morito, “Silicon-wire waveguide based external cavity laser for mW-order output power and temperature control free operation with silicon ring modulator,” Japan. J. of Appl. Phys.in press (2012).
- S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, and K. Morito, “Hybrid laser with Si ring resonator and SOA for temperature control free operation with ring resonator-based modulator,” in proc. of Group IV Photonics (IEEE GFP2011) 172–174.
- S. Tanaka, S. Jeong, S. Sekiguchi, T. Kurahashi, Y. Tanaka, and K. Morito, “Highly-efficient, low-noise Si hybrid laser using flip-chip bonded SOA,” in proc. of Optical Interconnects Conference (IEEE OIC2012) MB2.
- S. Tanaka, S. Jeong, S. Sekiguchi, T. Kurahashi, Y. Tanaka, and K. Morito, “Highly-efficient, low-noise Si hybrid laser using flip-chip bonded SOA,” in proc. of Optical Interconnects Conference (IEEE OIC2012) MB2.
- S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, T. Akiyama, Y. Tanaka, and K. Morito, “Silicon-wire waveguide based external cavity laser for mW-order output power and temperature control free operation with silicon ring modulator,” Japan. J. of Appl. Phys.in press (2012).
- H. Park, M. Sysak, H. Chen, A. Fang, D. Liang, L. Liao, B. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. of Sel. Topics in Quantum Electron.1–18 (2011).
- S. Tanaka, S. Jeong, S. Yamazaki, A. Uetake, S. Tomabechi, M. Ekawa, and K. Morito, “Monolithically integrated 8: 1 SOA gate switch with large extinction ratio and wide input power dynamic range,” IEEE J. of Quantum Electron.45, 1155–1162 (2009). [CrossRef]
- T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, “Microphotonics devices based on silicon microfabrication technology,” IEEE J. of Sel. Topics in Quantum Electron.11, 232–240 (2005). [CrossRef]
- S. Tanaka, S. Jeong, S. Yamazaki, A. Uetake, S. Tomabechi, M. Ekawa, and K. Morito, “Monolithically integrated 8: 1 SOA gate switch with large extinction ratio and wide input power dynamic range,” IEEE J. of Quantum Electron.45, 1155–1162 (2009). [CrossRef]
- T. Shimizu, N. Hatori, M. Okano, M. Ishizaka, Y. Urino, T. Yamamoto, M. Mori, T. Nakamura, and Y. Arakawa, “High density hybrid integrated light source with a laser diode array on a silicon optical waveguide platform for inter-chip optical interconnection,” in proc. of Group IV Photonics (IEEE GFP2011) 181–183.
- S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, T. Akiyama, Y. Tanaka, and K. Morito, “Silicon-wire waveguide based external cavity laser for mW-order output power and temperature control free operation with silicon ring modulator,” Japan. J. of Appl. Phys.in press (2012).
- S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, and K. Morito, “Hybrid laser with Si ring resonator and SOA for temperature control free operation with ring resonator-based modulator,” in proc. of Group IV Photonics (IEEE GFP2011) 172–174.
- S. Akiyama, T. Kurahashi, T. Baba, N. Hatori, T. Usuki, and T. Yamamoto, “1-Vpp 10-Gb/s operation of slow-light silicon mach-zehnder modulator in wavelength range of 1 nm,” in proc. of Group IV Photonics (IEEE GFP2010) 45–47.
- Y. Vlasov, “Silicon CMOS-integrated nano-photonics for computer and data communications beyond 100G,” Communications Magazine IEEE50, s67–s72 (2012). [CrossRef]
- T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, “Microphotonics devices based on silicon microfabrication technology,” IEEE J. of Sel. Topics in Quantum Electron.11, 232–240 (2005). [CrossRef]
- H. Park, M. Sysak, H. Chen, A. Fang, D. Liang, L. Liao, B. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. of Sel. Topics in Quantum Electron.1–18 (2011).
- T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, “Microphotonics devices based on silicon microfabrication technology,” IEEE J. of Sel. Topics in Quantum Electron.11, 232–240 (2005). [CrossRef]
- M. Yamada, “Transverse and longitudinal mode control in semiconductor injection lasers,” IEEE J. of Quantum Electron.19, 1365–1380 (1983). [CrossRef]
- S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, T. Akiyama, Y. Tanaka, and K. Morito, “Silicon-wire waveguide based external cavity laser for mW-order output power and temperature control free operation with silicon ring modulator,” Japan. J. of Appl. Phys.in press (2012).
- S. Akiyama, T. Kurahashi, T. Baba, N. Hatori, T. Usuki, and T. Yamamoto, “1-Vpp 10-Gb/s operation of slow-light silicon mach-zehnder modulator in wavelength range of 1 nm,” in proc. of Group IV Photonics (IEEE GFP2010) 45–47.
- S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, and K. Morito, “Hybrid laser with Si ring resonator and SOA for temperature control free operation with ring resonator-based modulator,” in proc. of Group IV Photonics (IEEE GFP2011) 172–174.
- T. Shimizu, N. Hatori, M. Okano, M. Ishizaka, Y. Urino, T. Yamamoto, M. Mori, T. Nakamura, and Y. Arakawa, “High density hybrid integrated light source with a laser diode array on a silicon optical waveguide platform for inter-chip optical interconnection,” in proc. of Group IV Photonics (IEEE GFP2011) 181–183.
- S. Tanaka, S. Jeong, S. Yamazaki, A. Uetake, S. Tomabechi, M. Ekawa, and K. Morito, “Monolithically integrated 8: 1 SOA gate switch with large extinction ratio and wide input power dynamic range,” IEEE J. of Quantum Electron.45, 1155–1162 (2009). [CrossRef]
- X. Sun, A. Zadok, M. Shearn, K. Diest, A. Ghaffari, H. Atwater, A. Scherer, and A. Yariv, “Hybrid electrically pumped evanescent Si/InGaAsP lasers,” in proc. of Optical Fiber Communication Conference (OFC2009) OThN1.
- G. Yoffe, T. Nguyen, J. Heanue, and B. Pezeshki, “Efficient compact tunable laser for access networks using silicon ring resonators,” in proc. of Optical Fiber Communication Conference (OFC2012) OW1G4.
- T. Okumura, T. Maruyama, H. Yonezawa, N. Nishiyama, and S. Arai, “Injection-type GaInAsP–InP–Si distributed-feedback laser directly bonded on silicon-on-insulator substrate,” IEEE Photon. Technol. Lett.21, 283–285 (2009). [CrossRef]
- X. Sun, A. Zadok, M. Shearn, K. Diest, A. Ghaffari, H. Atwater, A. Scherer, and A. Yariv, “Hybrid electrically pumped evanescent Si/InGaAsP lasers,” in proc. of Optical Fiber Communication Conference (OFC2009) OThN1.
- A. Krishnamoorthy, R. Ho, X. Zheng, H. Schwetman, J. Lexau, P. Koka, G. Li, I. Shubin, and J. Cunningham, “Computer systems based on silicon photonic interconnects,” Proceedings of the IEEE97, 1337–1361 (2009). [CrossRef]
- A. J. Zilkie, B. J. Bijlani, P. Seddighian, D. C. Lee, W. Qian, J. Fong, R. Shafiiha, D. Feng, B. J. Luff, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-efficiency hybrid III–V/Si external cavity DBR laser for 3-m SOI waveguides,” in proc. of Group IV Photonics (IEEE GFP2012) paper FA3.
- A. J. Zilkie, B. J. Bijlani, P. Seddighian, D. C. Lee, W. Qian, J. Fong, R. Shafiiha, D. Feng, B. J. Luff, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-efficiency hybrid III–V/Si external cavity DBR laser for 3-m SOI waveguides,” in proc. of Group IV Photonics (IEEE GFP2012) paper FA3.
Communications Magazine IEEE
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IEEE J. of Quantum Electron.
- S. Tanaka, S. Jeong, S. Yamazaki, A. Uetake, S. Tomabechi, M. Ekawa, and K. Morito, “Monolithically integrated 8: 1 SOA gate switch with large extinction ratio and wide input power dynamic range,” IEEE J. of Quantum Electron.45, 1155–1162 (2009). [CrossRef]
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IEEE J. of Sel. Topics in Quantum Electron.
- T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, “Microphotonics devices based on silicon microfabrication technology,” IEEE J. of Sel. Topics in Quantum Electron.11, 232–240 (2005). [CrossRef]
- B. Jalali, V. Raghunathan, D. Dimitropoulos, and O. Boyraz, “Raman-based silicon photonics,” IEEE J. of Sel. Topics in Quantum Electron.12, 412–421 (2006). [CrossRef]
- M. Sysak, D. Liang, R. Jones, G. Kurczveil, M. Piels, M. Fiorentino, R. Beausoleil, and J. Bowers, “Hybrid silicon laser technology: A thermal perspective,” IEEE J. of Sel. Topics in Quantum Electron.1–9 (2011).
- H. Park, M. Sysak, H. Chen, A. Fang, D. Liang, L. Liao, B. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. of Sel. Topics in Quantum Electron.1–18 (2011).
IEEE Photon. Technol. Lett.
- T. Okumura, T. Maruyama, H. Yonezawa, N. Nishiyama, and S. Arai, “Injection-type GaInAsP–InP–Si distributed-feedback laser directly bonded on silicon-on-insulator substrate,” IEEE Photon. Technol. Lett.21, 283–285 (2009). [CrossRef]
J. of Lightwave Technol.
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