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Waveguide based compact silicon Schottky photodetector with enhanced responsivity in the telecom spectral bandIlya Goykhman, Boris Desiatov, Jacob Khurgin, Joseph Shappir, and Uriel Levy »View Author Affiliations
Ilya Goykhman,1,3
Boris Desiatov,1
Jacob Khurgin,2
Joseph Shappir,1
and Uriel Levy1,*
1Department of Applied Physics, The Benin School of Engineering and Computer Science, The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem, 91904, Israel 2Department of Electrical and Computer Engineering, Johns Hopkins University, Baltimore, Maryland 21218, USA 3These authors contributed equally to the work *Corresponding author: ulevy@cc.huji.ac.il |
Optics Express, Vol. 20, Issue 27, pp. 28594-28602 (2012)
http://dx.doi.org/10.1364/OE.20.028594
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Abstract
We experimentally demonstrate an on-chip compact and simple to fabricate silicon Schottky photodetector for telecom wavelengths operating on the basis of internal photoemission process. The device is realized using CMOS compatible approach of local-oxidation of silicon, which enables the realization of the photodetector and low-loss bus photonic waveguide at the same fabrication step. The photodetector demonstrates enhanced internal responsivity of 12.5mA/W for operation wavelength of 1.55µm corresponding to an internal quantum efficiency of 1%, about two orders of magnitude higher than our previously demonstrated results [22]. We attribute this improved detection efficiency to the presence of surface roughness at the boundary between the materials forming the Schottky contact. The combination of enhanced quantum efficiency together with a simple fabrication process provides a promising platform for the realization of all silicon photodetectors and their integration with other nanophotonic and nanoplasmonic structures towards the construction of monolithic silicon opto-electronic circuitry on-chip.
© 2012 OSA
OCIS Codes
(040.6040) Detectors : Silicon
(130.3120) Integrated optics : Integrated optics devices
(240.6680) Optics at surfaces : Surface plasmons
ToC Category:
Detectors
History
Original Manuscript: November 5, 2012
Revised Manuscript: November 28, 2012
Manuscript Accepted: November 29, 2012
Published: December 10, 2012
Citation
Ilya Goykhman, Boris Desiatov, Jacob Khurgin, Joseph Shappir, and Uriel Levy, "Waveguide based compact silicon Schottky photodetector with enhanced responsivity in the telecom spectral band," Opt. Express 20, 28594-28602 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-27-28594
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References
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- A. Akbari and P. Berini, “Schottky contact surface-plasmon detector integrated with an asymmetric metal stripe waveguide,” Appl. Phys. Lett.95(2), 021104 (2009).
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- M. Casalino, L. Sirleto, M. Iodice, N. Saffioti, M. Gioffrè, I. Rendina, and G. Coppola, “Cu/p-Si schottky barrier-based near infrared photodetector integrated with a silicon-on-insulator waveguide,” Appl. Phys. Lett.96(24), 241112 (2010).
- H. Chen, X. Luo, and A. W. Poon, “Cavity-enhanced photocurrent generation by 1.55 µm wavelengths linear absorption in a p-i-n diode embedded silicon microring resonator,” Appl. Phys. Lett.95(17), 171111 (2009).
- Y. Kang, H.-D. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y.-H. Kuo, H.-W. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product,” Nat. Photonics3(1), 59–63 (2009). [CrossRef]
- Y. Wang, X. Su, Y. Zhu, Q. Wang, D. Zhu, J. Zhao, S. Chen, W. Huang, and S. Wu, “Photocurrent in Ag-Si photodiodes modulated by plasmonic nanopatterns,” Appl. Phys. Lett.95(24), 241106 (2009).
- S. K. Cheung and N. W. Cheung, “Extraction of schottky diode parameters from forward current-voltage characteristics,” Appl. Phys. Lett.49(2), 85–87 (1986). [CrossRef]
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- P. B. Johnson and R. W. Christy, “Optical constants of the noble metals,” Phys. Rev. B6(12), 4370–4379 (1972). [CrossRef]
- S. Zhu, H. S. Chu, G. Q. Lo, P. Bai, and D. L. Kwong, “Waveguide-integrated near-infrared detector with self-assembled metal silicide nanoparticles embedded in a silicon p-n junction,” Appl. Phys. Lett.100(6), 061109 (2012).
- Y. Kang, P. Mages, A. R. Clawson, P. K. L. Yu, M. Bitter, Z. Pan, A. Pauchard, S. Hummel, and Y. H. Lo, “Fused InGaAs-si avalanche photodiodes with low-noise performances,” IEEE Photon. Technol. Lett.14(11), 1593–1595 (2002). [CrossRef]
- M. Casalino, G. Coppola, M. Iodice, I. Rendina, and L. Sirleto, “Critically coupled silicon Fabry-Perot photodetectors based on the internal photoemission effect at 1550 nm,” Opt. Express20(11), 12599 (2012).
- M. Casalino, L. Sirleto, M. Iodice, N. Saffioti, M. Gioffrè, I. Rendina, and G. Coppola, “Cu/p-Si schottky barrier-based near infrared photodetector integrated with a silicon-on-insulator waveguide,” Appl. Phys. Lett.96(24), 241112 (2010).
- T. K. Liang, H. K. Tsang, I. E. Day, J. Drake, A. P. Knights, and M. Asghari, “Silicon waveguide two-photon absorption detector at 1.5 µm wavelength for autocorrelation measurements,” Appl. Phys. Lett.81(7), 1323–1325 (2002). [CrossRef]
- T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett.84(6), 855–857 (2004). [CrossRef]
- I. Goykhman, B. Desiatov, J. Khurgin, J. Shappir, and U. Levy, “Locally oxidized silicon Surface-Plasmon schottky detector for telecom regime,” Nano Lett.11(6), 2219–2224 (2011). [CrossRef] [PubMed]
- B. Desiatov, I. Goykhman, and U. Levy, “Demonstration of submicron square-like silicon waveguide using optimized LOCOS process,” Opt. Express18, 18592–18597 (2010).
- V. M. Shalaev, C. Douketis, J. T. Stuckless, and M. Moskovits, “Light-induced kinetic effects in solids,” Phys. Rev. B53(17), 11388–11402 (1996).
- T. K. Liang, H. K. Tsang, I. E. Day, J. Drake, A. P. Knights, and M. Asghari, “Silicon waveguide two-photon absorption detector at 1.5 µm wavelength for autocorrelation measurements,” Appl. Phys. Lett.81(7), 1323–1325 (2002). [CrossRef]
- J. G. Endriz, “Surface waves and grating-tuned photocathodes,” Appl. Phys. Lett.25(5), 261–262 (1974).
- J. J. Ackert, M. Fiorentino, D. F. Logan, R. G. Beausoleil, P. E. Jessop, and A. P. Knights, “Silicon-on-insulator microring resonator defect-based photodetector with 3.5-GHz bandwidth,” J. Nanophotonics5(1), 059507 (2011).
- T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett.84(6), 855–857 (2004). [CrossRef]
- T. Aihara, K. Nakagawa, M. Fukuhara, Y. L. Yu, K. Yamaguchi, and M. Fukuda, “Optical frequency signal detection through surface plasmon polaritons,” Appl. Phys. Lett.99(4), 043111 (2011).
- M. Fukuda, T. Aihara, K. Yamaguchi, Y. Y. Ling, K. Miyaji, and M. Tohyama, “Light detection enhanced by surface plasmon resonance in metal film,” Appl. Phys. Lett.96(15), 153107 (2010).
- T. Aihara, K. Nakagawa, M. Fukuhara, Y. L. Yu, K. Yamaguchi, and M. Fukuda, “Optical frequency signal detection through surface plasmon polaritons,” Appl. Phys. Lett.99(4), 043111 (2011).
- T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett.84(6), 855–857 (2004). [CrossRef]
- M. Casalino, L. Sirleto, M. Iodice, N. Saffioti, M. Gioffrè, I. Rendina, and G. Coppola, “Cu/p-Si schottky barrier-based near infrared photodetector integrated with a silicon-on-insulator waveguide,” Appl. Phys. Lett.96(24), 241112 (2010).
- I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Gmitter, and A. Scherer, “30% external quantum efficiency from surface textured, thin-film light-emitting diodes,” Appl. Phys. Lett.63(16), 2174–2176 (1993). [CrossRef]
- I. Goykhman, B. Desiatov, J. Khurgin, J. Shappir, and U. Levy, “Locally oxidized silicon Surface-Plasmon schottky detector for telecom regime,” Nano Lett.11(6), 2219–2224 (2011). [CrossRef] [PubMed]
- B. Desiatov, I. Goykhman, and U. Levy, “Demonstration of submicron square-like silicon waveguide using optimized LOCOS process,” Opt. Express18, 18592–18597 (2010).
- M. W. Knight, H. Sobhani, P. Nordlander, and N. J. Halas, “Photodetection with active optical antennas,” Science332(6030), 702–704 (2011). [CrossRef] [PubMed]
- A. R. Hawkins, W. Wu, P. Abraham, K. Streubel, and J. E. Bowers, “High gain-bandwidth-product silicon heterointerface photodetector,” Appl. Phys. Lett.70(3), 303–305 (1997). [CrossRef]
- R. H. Horng, S. H. Huang, C. C. Yang, and D. S. Wuu, “Efficiency Improvement of GaN-Based LEDs with ITO Texturing Window Layers Using Natural Lithography,” IEEE J. Sel. Top. Quantum Electron.12(6), 1196–1201 (2006). [CrossRef]
- Z. Horváth, M. Ádám, I. Szabó, M. Serényi, and V. Van Tuyen, “Modification of Al/Si interface and schottky barrier height with chemical treatment,” Appl. Surf. Sci.190(1-4), 441–444 (2002). [CrossRef]
- T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett.84(6), 855–857 (2004). [CrossRef]
- R. H. Horng, S. H. Huang, C. C. Yang, and D. S. Wuu, “Efficiency Improvement of GaN-Based LEDs with ITO Texturing Window Layers Using Natural Lithography,” IEEE J. Sel. Top. Quantum Electron.12(6), 1196–1201 (2006). [CrossRef]
- Y. Wang, X. Su, Y. Zhu, Q. Wang, D. Zhu, J. Zhao, S. Chen, W. Huang, and S. Wu, “Photocurrent in Ag-Si photodiodes modulated by plasmonic nanopatterns,” Appl. Phys. Lett.95(24), 241106 (2009).
- Y. Kang, P. Mages, A. R. Clawson, P. K. L. Yu, M. Bitter, Z. Pan, A. Pauchard, S. Hummel, and Y. H. Lo, “Fused InGaAs-si avalanche photodiodes with low-noise performances,” IEEE Photon. Technol. Lett.14(11), 1593–1595 (2002). [CrossRef]
- M. Casalino, G. Coppola, M. Iodice, I. Rendina, and L. Sirleto, “Critically coupled silicon Fabry-Perot photodetectors based on the internal photoemission effect at 1550 nm,” Opt. Express20(11), 12599 (2012).
- M. Casalino, L. Sirleto, M. Iodice, N. Saffioti, M. Gioffrè, I. Rendina, and G. Coppola, “Cu/p-Si schottky barrier-based near infrared photodetector integrated with a silicon-on-insulator waveguide,” Appl. Phys. Lett.96(24), 241112 (2010).
- J. J. Ackert, M. Fiorentino, D. F. Logan, R. G. Beausoleil, P. E. Jessop, and A. P. Knights, “Silicon-on-insulator microring resonator defect-based photodetector with 3.5-GHz bandwidth,” J. Nanophotonics5(1), 059507 (2011).
- J. D. B. Bradley, P. E. Jessop, and A. P. Knights, “Silicon waveguide-integrated optical power monitor with enhanced sensitivity at 1550 nm,” Appl. Phys. Lett.86(24), 241103 (2005).
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