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A new class of electrically tunable metamaterial terahertz modulatorsRusen Yan, Berardi Sensale-Rodriguez, Lei Liu, Debdeep Jena, and Huili Grace Xing »View Author Affiliations
Rusen Yan,1,2
Berardi Sensale-Rodriguez,1,2
Lei Liu,1
Debdeep Jena,1
and Huili Grace Xing1,*
1Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, USA 2These authors contribute equally to this work *Corresponding author: hxing@nd.edu |
Optics Express, Vol. 20, Issue 27, pp. 28664-28671 (2012)
http://dx.doi.org/10.1364/OE.20.028664
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Abstract
Switchable metamaterials offer unique solutions for efficiently manipulating electromagnetic waves, particularly for terahertz waves, which has been difficult since naturally occurring materials rarely respond to terahertz frequencies controllably. However, few terahertz modulators demonstrated to date exhibit simultaneously low attenuation and high modulation depth. In this letter we propose a new class of electrically-tunable terahertz metamaterial modulators employing metallic frequency-selective-surfaces (FSS) in conjunction with capacitively-tunable layers of electrons, promising near 100% modulation depth and < 15% attenuation. The fundamental departure in our design from the prior art is tuning enabled by self-gated electron layers that is independent from the metallic FSS. Our proposal is applicable to all possible electrically tunable elements including graphene, Si, MoS2, oxides etc, thus opening up myriad opportunities for realizing high performance switchable metamaterials over an ultra-wide terahertz frequency range.
© 2012 OSA
OCIS Codes
(040.2235) Detectors : Far infrared or terahertz
(160.3918) Materials : Metamaterials
(250.4110) Optoelectronics : Modulators
ToC Category:
Metamaterials
History
Original Manuscript: September 14, 2012
Revised Manuscript: November 18, 2012
Manuscript Accepted: November 26, 2012
Published: December 10, 2012
Citation
Rusen Yan, Berardi Sensale-Rodriguez, Lei Liu, Debdeep Jena, and Huili Grace Xing, "A new class of electrically tunable metamaterial terahertz modulators," Opt. Express 20, 28664-28671 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-27-28664
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References
- A. D. Boardman, V. V. Grimalsky, Y. S. Kivshar, S. V. Koshevaya, M. Lapine, N. M. Litchinitser, V. N. Malnev, M. Noginov, Y. G. Rapoport, and V. M. Shalaev, “Active and tunable metamaterials,” Laser Photon. Rev.5(2), 287–307 (2011). [CrossRef]
- M. Tonouchi, “Cutting-edge terahertz technology,” Nat. Photonics1(2), 97–105 (2007). [CrossRef]
- H. T. Chen, W. J. Padilla, J. M. O. Zide, A. C. Gossard, A. J. Taylor, and R. D. Averitt, “Active terahertz metamaterial devices,” Nature444(7119), 597–600 (2006). [CrossRef] [PubMed]
- T. Kleine-Ostmann, P. Dawson, K. Pierz, G. Hein, and M. Koch, “Room-temperature operation of an electrically driven terahertz modulator,” Appl. Phys. Lett.84(18), 3555–3557 (2004). [CrossRef]
- T. Kleine-Ostmann, K. Pierz, G. Hein, P. Dawson, M. Marso, and M. Koch, “Spatially resolved measurements of depletion properties of large gate two-dimensional electron gas semiconductor terahertz modulators,” J. Appl. Phys.105(9), 093707 (2009). [CrossRef]
- B. Sensale-Rodriguez, T. Fang, R. Yan, M. M. Kelly, D. Jena, L. Liu, and H. G. Xing, “Unique prospects for graphene-based terahertz modulators,” Appl. Phys. Lett.99, 113104 (2011). [CrossRef]
- B. Sensale-Rodriguez, R. Yan, M. M. Kelly, T. Fang, K. Tahy, W. S. Hwang, D. Jena, L. Liu, and H. G. Xing, “Broadband graphene terahertz modulators enabled by intraband transitions,” Nat Commun3, 780 (2012). [CrossRef] [PubMed]
- B. Sensale-Rodriguez, R. Yan, S. Rafique, M. Zhu, W. Li, X. Liang, D. Gundlach, V. Protasenko, M. M. Kelly, D. Jena, L. Liu, and H. G. Xing, “Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators,” Nano Lett.12(9), 4518–4522 (2012). [CrossRef] [PubMed]
- F. Xia, T. Mueller, R. Golizadeh-Mojarad, M. Freitag, Y. M. Lin, J. Tsang, V. Perebeinos, and P. Avouris, “Photocurrent imaging and efficient photon detection in a graphene transistor,” Nano Lett.9(3), 1039–1044 (2009). [CrossRef] [PubMed]
- Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F. Wang, F. Bonaccorso, D. M. Basko, and A. C. Ferrari, “Graphene mode-locked ultrafast laser,” ACS Nano4(2), 803–810 (2010). [CrossRef] [PubMed]
- R. Yan, Q. Zhang, W. Li, I. Calizo, T. Shen, C. A. Richter, A. R. Hight-Walker, X. Liang, A. Seabaugh, D. Jena, H. G. Xing, D. J. Gundlach, and N. V. Nguyen, “Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy,” Appl. Phys. Lett.101(2), 022105 (2012). [CrossRef]
- K. F. Mak, M. Y. Sfeir, Y. Wu, C. H. Lui, J. A. Misewich, and T. F. Heinz, “Measurement of the Optical Conductivity of Graphene,” Phys. Rev. Lett.101(19), 196405 (2008). [CrossRef] [PubMed]
- B. Sensale-Rodriguez, R. Yan, S. Rafique, M. Zhu, V. Protasenko, D. Jena, L. Liu, and H. G. Xing, ‘Exceptional Tunability of THz Reflectance in Graphene Structures”, IRMMWTHz 2012, Wollongong, Australia, 2012.
- H. T. Chen, W. J. Padilla, M. J. Cich, A. K. Azad, R. D. Averitt, and A. J. Taylor, “A metamaterial solid-state terahertz phase modulator,” Nat. Photonics3(3), 148–151 (2009). [CrossRef]
- P. Tassin, T. Koschny, M. Kafesaki, and C. M. Soukoulis, “A comparison of graphene, superconductors and metals as conductors for metamaterials and plasmonics,” Nat. Photonics6(4), 259–264 (2012). [CrossRef]
- B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol.6(3), 147–150 (2011). [CrossRef] [PubMed]
- K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS₂: a new direct-gap semiconductor,” Phys. Rev. Lett.105(13), 136805 (2010). [CrossRef] [PubMed]
- W. S. Hwang, M. Remskar, R. Yan, V. Protasenko, K. Tahy, S. D. Chae, P. Zhao, A. Konar, H. G. Xing, A. Seabaugh, and D. Jena, “Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior,” Appl. Phys. Lett.101, 013107 (2012). [CrossRef]
- S. Kim, A. Konar, W. S. Hwang, J. H. Lee, J. Lee, J. Yang, C. Jung, H. Kim, J. B. Yoo, J. Y. Choi, Y. W. Jin, S. Y. Lee, D. Jena, W. Choi, and K. Kim, “High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals,” Nat Commun3, 1011 (2012). [CrossRef] [PubMed]
- S. J. Allen, D. C. Tsui, and R. A. Logan, “Observation of the two-dimensional plasmon in silicon inversion layers,” Phys. Rev. Lett.38(17), 980–983 (1977). [CrossRef]
- Y. W. Tan, Y. Zhang, K. Bolotin, Y. Zhao, S. Adam, E. H. Hwang, S. Das Sarma, H. L. Stormer, and P. Kim, “Measurement of scattering rate and minimum conductivity in graphene,” Phys. Rev. Lett.99(24), 246803 (2007). [CrossRef] [PubMed]
Adam, S.
Allen, S. J.
Averitt, R. D.
Avouris, P.
Azad, A. K.
Basko, D. M.
Boardman, A. D.
Bolotin, K.
Bonaccorso, F.
Brivio, J.
Calizo, I.
Chae, S. D.
Chen, H. T.
Choi, J. Y.
Choi, W.
Cich, M. J.
Das Sarma, S.
Dawson, P.
Fang, T.
Ferrari, A. C.
Freitag, M.
Giacometti, V.
Golizadeh-Mojarad, R.
Gossard, A. C.
Grimalsky, V. V.
Gundlach, D.
Gundlach, D. J.
Hasan, T.
Hein, G.
Heinz, T. F.
Hight-Walker, A. R.
Hone, J.
Hwang, E. H.
Hwang, W. S.
Jena, D.
Jin, Y. W.
Jung, C.
Kafesaki, M.
Kelly, M. M.
Kim, H.
Kim, K.
Kim, P.
Kim, S.
Kis, A.
Kivshar, Y. S.
Kleine-Ostmann, T.
Koch, M.
Konar, A.
Koschny, T.
Koshevaya, S. V.
Lapine, M.
Lee, C.
Lee, J.
Lee, J. H.
Lee, S. Y.
Li, W.
Liang, X.
Lin, Y. M.
Litchinitser, N. M.
Liu, L.
Logan, R. A.
Lui, C. H.
Mak, K. F.
Malnev, V. N.
Marso, M.
Misewich, J. A.
Mueller, T.
Nguyen, N. V.
Noginov, M.
Padilla, W. J.
Perebeinos, V.
Pierz, K.
Popa, D.
Privitera, G.
Protasenko, V.
Radenovic, A.
Radisavljevic, B.
Rafique, S.
Rapoport, Y. G.
Remskar, M.
Richter, C. A.
Seabaugh, A.
Sensale-Rodriguez, B.
Sfeir, M. Y.
Shalaev, V. M.
Shan, J.
Shen, T.
Soukoulis, C. M.
Stormer, H. L.
Sun, Z.
Tahy, K.
Tan, Y. W.
Tassin, P.
Taylor, A. J.
Tonouchi, M.
Torrisi, F.
Tsang, J.
Tsui, D. C.
Wang, F.
Wu, Y.
Xia, F.
Xing, H. G.
Yan, R.
Yang, J.
Yoo, J. B.
Zhang, Q.
Zhang, Y.
Zhao, P.
Zhao, Y.
Zhu, M.
Zide, J. M. O.
- Y. W. Tan, Y. Zhang, K. Bolotin, Y. Zhao, S. Adam, E. H. Hwang, S. Das Sarma, H. L. Stormer, and P. Kim, “Measurement of scattering rate and minimum conductivity in graphene,” Phys. Rev. Lett.99(24), 246803 (2007). [CrossRef] [PubMed]
- S. J. Allen, D. C. Tsui, and R. A. Logan, “Observation of the two-dimensional plasmon in silicon inversion layers,” Phys. Rev. Lett.38(17), 980–983 (1977). [CrossRef]
- H. T. Chen, W. J. Padilla, M. J. Cich, A. K. Azad, R. D. Averitt, and A. J. Taylor, “A metamaterial solid-state terahertz phase modulator,” Nat. Photonics3(3), 148–151 (2009). [CrossRef]
- H. T. Chen, W. J. Padilla, J. M. O. Zide, A. C. Gossard, A. J. Taylor, and R. D. Averitt, “Active terahertz metamaterial devices,” Nature444(7119), 597–600 (2006). [CrossRef] [PubMed]
- F. Xia, T. Mueller, R. Golizadeh-Mojarad, M. Freitag, Y. M. Lin, J. Tsang, V. Perebeinos, and P. Avouris, “Photocurrent imaging and efficient photon detection in a graphene transistor,” Nano Lett.9(3), 1039–1044 (2009). [CrossRef] [PubMed]
- H. T. Chen, W. J. Padilla, M. J. Cich, A. K. Azad, R. D. Averitt, and A. J. Taylor, “A metamaterial solid-state terahertz phase modulator,” Nat. Photonics3(3), 148–151 (2009). [CrossRef]
- Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F. Wang, F. Bonaccorso, D. M. Basko, and A. C. Ferrari, “Graphene mode-locked ultrafast laser,” ACS Nano4(2), 803–810 (2010). [CrossRef] [PubMed]
- A. D. Boardman, V. V. Grimalsky, Y. S. Kivshar, S. V. Koshevaya, M. Lapine, N. M. Litchinitser, V. N. Malnev, M. Noginov, Y. G. Rapoport, and V. M. Shalaev, “Active and tunable metamaterials,” Laser Photon. Rev.5(2), 287–307 (2011). [CrossRef]
- Y. W. Tan, Y. Zhang, K. Bolotin, Y. Zhao, S. Adam, E. H. Hwang, S. Das Sarma, H. L. Stormer, and P. Kim, “Measurement of scattering rate and minimum conductivity in graphene,” Phys. Rev. Lett.99(24), 246803 (2007). [CrossRef] [PubMed]
- Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F. Wang, F. Bonaccorso, D. M. Basko, and A. C. Ferrari, “Graphene mode-locked ultrafast laser,” ACS Nano4(2), 803–810 (2010). [CrossRef] [PubMed]
- B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol.6(3), 147–150 (2011). [CrossRef] [PubMed]
- R. Yan, Q. Zhang, W. Li, I. Calizo, T. Shen, C. A. Richter, A. R. Hight-Walker, X. Liang, A. Seabaugh, D. Jena, H. G. Xing, D. J. Gundlach, and N. V. Nguyen, “Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy,” Appl. Phys. Lett.101(2), 022105 (2012). [CrossRef]
- W. S. Hwang, M. Remskar, R. Yan, V. Protasenko, K. Tahy, S. D. Chae, P. Zhao, A. Konar, H. G. Xing, A. Seabaugh, and D. Jena, “Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior,” Appl. Phys. Lett.101, 013107 (2012). [CrossRef]
- H. T. Chen, W. J. Padilla, M. J. Cich, A. K. Azad, R. D. Averitt, and A. J. Taylor, “A metamaterial solid-state terahertz phase modulator,” Nat. Photonics3(3), 148–151 (2009). [CrossRef]
- H. T. Chen, W. J. Padilla, J. M. O. Zide, A. C. Gossard, A. J. Taylor, and R. D. Averitt, “Active terahertz metamaterial devices,” Nature444(7119), 597–600 (2006). [CrossRef] [PubMed]
- S. Kim, A. Konar, W. S. Hwang, J. H. Lee, J. Lee, J. Yang, C. Jung, H. Kim, J. B. Yoo, J. Y. Choi, Y. W. Jin, S. Y. Lee, D. Jena, W. Choi, and K. Kim, “High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals,” Nat Commun3, 1011 (2012). [CrossRef] [PubMed]
- S. Kim, A. Konar, W. S. Hwang, J. H. Lee, J. Lee, J. Yang, C. Jung, H. Kim, J. B. Yoo, J. Y. Choi, Y. W. Jin, S. Y. Lee, D. Jena, W. Choi, and K. Kim, “High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals,” Nat Commun3, 1011 (2012). [CrossRef] [PubMed]
- H. T. Chen, W. J. Padilla, M. J. Cich, A. K. Azad, R. D. Averitt, and A. J. Taylor, “A metamaterial solid-state terahertz phase modulator,” Nat. Photonics3(3), 148–151 (2009). [CrossRef]
- Y. W. Tan, Y. Zhang, K. Bolotin, Y. Zhao, S. Adam, E. H. Hwang, S. Das Sarma, H. L. Stormer, and P. Kim, “Measurement of scattering rate and minimum conductivity in graphene,” Phys. Rev. Lett.99(24), 246803 (2007). [CrossRef] [PubMed]
- T. Kleine-Ostmann, K. Pierz, G. Hein, P. Dawson, M. Marso, and M. Koch, “Spatially resolved measurements of depletion properties of large gate two-dimensional electron gas semiconductor terahertz modulators,” J. Appl. Phys.105(9), 093707 (2009). [CrossRef]
- T. Kleine-Ostmann, P. Dawson, K. Pierz, G. Hein, and M. Koch, “Room-temperature operation of an electrically driven terahertz modulator,” Appl. Phys. Lett.84(18), 3555–3557 (2004). [CrossRef]
- B. Sensale-Rodriguez, R. Yan, M. M. Kelly, T. Fang, K. Tahy, W. S. Hwang, D. Jena, L. Liu, and H. G. Xing, “Broadband graphene terahertz modulators enabled by intraband transitions,” Nat Commun3, 780 (2012). [CrossRef] [PubMed]
- B. Sensale-Rodriguez, T. Fang, R. Yan, M. M. Kelly, D. Jena, L. Liu, and H. G. Xing, “Unique prospects for graphene-based terahertz modulators,” Appl. Phys. Lett.99, 113104 (2011). [CrossRef]
- Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F. Wang, F. Bonaccorso, D. M. Basko, and A. C. Ferrari, “Graphene mode-locked ultrafast laser,” ACS Nano4(2), 803–810 (2010). [CrossRef] [PubMed]
- F. Xia, T. Mueller, R. Golizadeh-Mojarad, M. Freitag, Y. M. Lin, J. Tsang, V. Perebeinos, and P. Avouris, “Photocurrent imaging and efficient photon detection in a graphene transistor,” Nano Lett.9(3), 1039–1044 (2009). [CrossRef] [PubMed]
- B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol.6(3), 147–150 (2011). [CrossRef] [PubMed]
- F. Xia, T. Mueller, R. Golizadeh-Mojarad, M. Freitag, Y. M. Lin, J. Tsang, V. Perebeinos, and P. Avouris, “Photocurrent imaging and efficient photon detection in a graphene transistor,” Nano Lett.9(3), 1039–1044 (2009). [CrossRef] [PubMed]
- H. T. Chen, W. J. Padilla, J. M. O. Zide, A. C. Gossard, A. J. Taylor, and R. D. Averitt, “Active terahertz metamaterial devices,” Nature444(7119), 597–600 (2006). [CrossRef] [PubMed]
- A. D. Boardman, V. V. Grimalsky, Y. S. Kivshar, S. V. Koshevaya, M. Lapine, N. M. Litchinitser, V. N. Malnev, M. Noginov, Y. G. Rapoport, and V. M. Shalaev, “Active and tunable metamaterials,” Laser Photon. Rev.5(2), 287–307 (2011). [CrossRef]
- B. Sensale-Rodriguez, R. Yan, S. Rafique, M. Zhu, W. Li, X. Liang, D. Gundlach, V. Protasenko, M. M. Kelly, D. Jena, L. Liu, and H. G. Xing, “Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators,” Nano Lett.12(9), 4518–4522 (2012). [CrossRef] [PubMed]
- R. Yan, Q. Zhang, W. Li, I. Calizo, T. Shen, C. A. Richter, A. R. Hight-Walker, X. Liang, A. Seabaugh, D. Jena, H. G. Xing, D. J. Gundlach, and N. V. Nguyen, “Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy,” Appl. Phys. Lett.101(2), 022105 (2012). [CrossRef]
- Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F. Wang, F. Bonaccorso, D. M. Basko, and A. C. Ferrari, “Graphene mode-locked ultrafast laser,” ACS Nano4(2), 803–810 (2010). [CrossRef] [PubMed]
- T. Kleine-Ostmann, K. Pierz, G. Hein, P. Dawson, M. Marso, and M. Koch, “Spatially resolved measurements of depletion properties of large gate two-dimensional electron gas semiconductor terahertz modulators,” J. Appl. Phys.105(9), 093707 (2009). [CrossRef]
- T. Kleine-Ostmann, P. Dawson, K. Pierz, G. Hein, and M. Koch, “Room-temperature operation of an electrically driven terahertz modulator,” Appl. Phys. Lett.84(18), 3555–3557 (2004). [CrossRef]
- K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS₂: a new direct-gap semiconductor,” Phys. Rev. Lett.105(13), 136805 (2010). [CrossRef] [PubMed]
- K. F. Mak, M. Y. Sfeir, Y. Wu, C. H. Lui, J. A. Misewich, and T. F. Heinz, “Measurement of the Optical Conductivity of Graphene,” Phys. Rev. Lett.101(19), 196405 (2008). [CrossRef] [PubMed]
- R. Yan, Q. Zhang, W. Li, I. Calizo, T. Shen, C. A. Richter, A. R. Hight-Walker, X. Liang, A. Seabaugh, D. Jena, H. G. Xing, D. J. Gundlach, and N. V. Nguyen, “Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy,” Appl. Phys. Lett.101(2), 022105 (2012). [CrossRef]
- K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS₂: a new direct-gap semiconductor,” Phys. Rev. Lett.105(13), 136805 (2010). [CrossRef] [PubMed]
- Y. W. Tan, Y. Zhang, K. Bolotin, Y. Zhao, S. Adam, E. H. Hwang, S. Das Sarma, H. L. Stormer, and P. Kim, “Measurement of scattering rate and minimum conductivity in graphene,” Phys. Rev. Lett.99(24), 246803 (2007). [CrossRef] [PubMed]
- W. S. Hwang, M. Remskar, R. Yan, V. Protasenko, K. Tahy, S. D. Chae, P. Zhao, A. Konar, H. G. Xing, A. Seabaugh, and D. Jena, “Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior,” Appl. Phys. Lett.101, 013107 (2012). [CrossRef]
- S. Kim, A. Konar, W. S. Hwang, J. H. Lee, J. Lee, J. Yang, C. Jung, H. Kim, J. B. Yoo, J. Y. Choi, Y. W. Jin, S. Y. Lee, D. Jena, W. Choi, and K. Kim, “High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals,” Nat Commun3, 1011 (2012). [CrossRef] [PubMed]
- B. Sensale-Rodriguez, R. Yan, M. M. Kelly, T. Fang, K. Tahy, W. S. Hwang, D. Jena, L. Liu, and H. G. Xing, “Broadband graphene terahertz modulators enabled by intraband transitions,” Nat Commun3, 780 (2012). [CrossRef] [PubMed]
- B. Sensale-Rodriguez, R. Yan, M. M. Kelly, T. Fang, K. Tahy, W. S. Hwang, D. Jena, L. Liu, and H. G. Xing, “Broadband graphene terahertz modulators enabled by intraband transitions,” Nat Commun3, 780 (2012). [CrossRef] [PubMed]
- B. Sensale-Rodriguez, R. Yan, S. Rafique, M. Zhu, W. Li, X. Liang, D. Gundlach, V. Protasenko, M. M. Kelly, D. Jena, L. Liu, and H. G. Xing, “Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators,” Nano Lett.12(9), 4518–4522 (2012). [CrossRef] [PubMed]
- W. S. Hwang, M. Remskar, R. Yan, V. Protasenko, K. Tahy, S. D. Chae, P. Zhao, A. Konar, H. G. Xing, A. Seabaugh, and D. Jena, “Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior,” Appl. Phys. Lett.101, 013107 (2012). [CrossRef]
- R. Yan, Q. Zhang, W. Li, I. Calizo, T. Shen, C. A. Richter, A. R. Hight-Walker, X. Liang, A. Seabaugh, D. Jena, H. G. Xing, D. J. Gundlach, and N. V. Nguyen, “Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy,” Appl. Phys. Lett.101(2), 022105 (2012). [CrossRef]
- S. Kim, A. Konar, W. S. Hwang, J. H. Lee, J. Lee, J. Yang, C. Jung, H. Kim, J. B. Yoo, J. Y. Choi, Y. W. Jin, S. Y. Lee, D. Jena, W. Choi, and K. Kim, “High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals,” Nat Commun3, 1011 (2012). [CrossRef] [PubMed]
- B. Sensale-Rodriguez, T. Fang, R. Yan, M. M. Kelly, D. Jena, L. Liu, and H. G. Xing, “Unique prospects for graphene-based terahertz modulators,” Appl. Phys. Lett.99, 113104 (2011). [CrossRef]
- S. Kim, A. Konar, W. S. Hwang, J. H. Lee, J. Lee, J. Yang, C. Jung, H. Kim, J. B. Yoo, J. Y. Choi, Y. W. Jin, S. Y. Lee, D. Jena, W. Choi, and K. Kim, “High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals,” Nat Commun3, 1011 (2012). [CrossRef] [PubMed]
- S. Kim, A. Konar, W. S. Hwang, J. H. Lee, J. Lee, J. Yang, C. Jung, H. Kim, J. B. Yoo, J. Y. Choi, Y. W. Jin, S. Y. Lee, D. Jena, W. Choi, and K. Kim, “High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals,” Nat Commun3, 1011 (2012). [CrossRef] [PubMed]
- P. Tassin, T. Koschny, M. Kafesaki, and C. M. Soukoulis, “A comparison of graphene, superconductors and metals as conductors for metamaterials and plasmonics,” Nat. Photonics6(4), 259–264 (2012). [CrossRef]
- B. Sensale-Rodriguez, R. Yan, M. M. Kelly, T. Fang, K. Tahy, W. S. Hwang, D. Jena, L. Liu, and H. G. Xing, “Broadband graphene terahertz modulators enabled by intraband transitions,” Nat Commun3, 780 (2012). [CrossRef] [PubMed]
- B. Sensale-Rodriguez, R. Yan, S. Rafique, M. Zhu, W. Li, X. Liang, D. Gundlach, V. Protasenko, M. M. Kelly, D. Jena, L. Liu, and H. G. Xing, “Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators,” Nano Lett.12(9), 4518–4522 (2012). [CrossRef] [PubMed]
- B. Sensale-Rodriguez, T. Fang, R. Yan, M. M. Kelly, D. Jena, L. Liu, and H. G. Xing, “Unique prospects for graphene-based terahertz modulators,” Appl. Phys. Lett.99, 113104 (2011). [CrossRef]
- S. Kim, A. Konar, W. S. Hwang, J. H. Lee, J. Lee, J. Yang, C. Jung, H. Kim, J. B. Yoo, J. Y. Choi, Y. W. Jin, S. Y. Lee, D. Jena, W. Choi, and K. Kim, “High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals,” Nat Commun3, 1011 (2012). [CrossRef] [PubMed]
- S. Kim, A. Konar, W. S. Hwang, J. H. Lee, J. Lee, J. Yang, C. Jung, H. Kim, J. B. Yoo, J. Y. Choi, Y. W. Jin, S. Y. Lee, D. Jena, W. Choi, and K. Kim, “High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals,” Nat Commun3, 1011 (2012). [CrossRef] [PubMed]
- Y. W. Tan, Y. Zhang, K. Bolotin, Y. Zhao, S. Adam, E. H. Hwang, S. Das Sarma, H. L. Stormer, and P. Kim, “Measurement of scattering rate and minimum conductivity in graphene,” Phys. Rev. Lett.99(24), 246803 (2007). [CrossRef] [PubMed]
- S. Kim, A. Konar, W. S. Hwang, J. H. Lee, J. Lee, J. Yang, C. Jung, H. Kim, J. B. Yoo, J. Y. Choi, Y. W. Jin, S. Y. Lee, D. Jena, W. Choi, and K. Kim, “High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals,” Nat Commun3, 1011 (2012). [CrossRef] [PubMed]
- B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol.6(3), 147–150 (2011). [CrossRef] [PubMed]
- A. D. Boardman, V. V. Grimalsky, Y. S. Kivshar, S. V. Koshevaya, M. Lapine, N. M. Litchinitser, V. N. Malnev, M. Noginov, Y. G. Rapoport, and V. M. Shalaev, “Active and tunable metamaterials,” Laser Photon. Rev.5(2), 287–307 (2011). [CrossRef]
- T. Kleine-Ostmann, K. Pierz, G. Hein, P. Dawson, M. Marso, and M. Koch, “Spatially resolved measurements of depletion properties of large gate two-dimensional electron gas semiconductor terahertz modulators,” J. Appl. Phys.105(9), 093707 (2009). [CrossRef]
- T. Kleine-Ostmann, P. Dawson, K. Pierz, G. Hein, and M. Koch, “Room-temperature operation of an electrically driven terahertz modulator,” Appl. Phys. Lett.84(18), 3555–3557 (2004). [CrossRef]
- T. Kleine-Ostmann, K. Pierz, G. Hein, P. Dawson, M. Marso, and M. Koch, “Spatially resolved measurements of depletion properties of large gate two-dimensional electron gas semiconductor terahertz modulators,” J. Appl. Phys.105(9), 093707 (2009). [CrossRef]
- T. Kleine-Ostmann, P. Dawson, K. Pierz, G. Hein, and M. Koch, “Room-temperature operation of an electrically driven terahertz modulator,” Appl. Phys. Lett.84(18), 3555–3557 (2004). [CrossRef]
- S. Kim, A. Konar, W. S. Hwang, J. H. Lee, J. Lee, J. Yang, C. Jung, H. Kim, J. B. Yoo, J. Y. Choi, Y. W. Jin, S. Y. Lee, D. Jena, W. Choi, and K. Kim, “High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals,” Nat Commun3, 1011 (2012). [CrossRef] [PubMed]
- W. S. Hwang, M. Remskar, R. Yan, V. Protasenko, K. Tahy, S. D. Chae, P. Zhao, A. Konar, H. G. Xing, A. Seabaugh, and D. Jena, “Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior,” Appl. Phys. Lett.101, 013107 (2012). [CrossRef]
- P. Tassin, T. Koschny, M. Kafesaki, and C. M. Soukoulis, “A comparison of graphene, superconductors and metals as conductors for metamaterials and plasmonics,” Nat. Photonics6(4), 259–264 (2012). [CrossRef]
- A. D. Boardman, V. V. Grimalsky, Y. S. Kivshar, S. V. Koshevaya, M. Lapine, N. M. Litchinitser, V. N. Malnev, M. Noginov, Y. G. Rapoport, and V. M. Shalaev, “Active and tunable metamaterials,” Laser Photon. Rev.5(2), 287–307 (2011). [CrossRef]
- A. D. Boardman, V. V. Grimalsky, Y. S. Kivshar, S. V. Koshevaya, M. Lapine, N. M. Litchinitser, V. N. Malnev, M. Noginov, Y. G. Rapoport, and V. M. Shalaev, “Active and tunable metamaterials,” Laser Photon. Rev.5(2), 287–307 (2011). [CrossRef]
- K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS₂: a new direct-gap semiconductor,” Phys. Rev. Lett.105(13), 136805 (2010). [CrossRef] [PubMed]
- S. Kim, A. Konar, W. S. Hwang, J. H. Lee, J. Lee, J. Yang, C. Jung, H. Kim, J. B. Yoo, J. Y. Choi, Y. W. Jin, S. Y. Lee, D. Jena, W. Choi, and K. Kim, “High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals,” Nat Commun3, 1011 (2012). [CrossRef] [PubMed]
- S. Kim, A. Konar, W. S. Hwang, J. H. Lee, J. Lee, J. Yang, C. Jung, H. Kim, J. B. Yoo, J. Y. Choi, Y. W. Jin, S. Y. Lee, D. Jena, W. Choi, and K. Kim, “High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals,” Nat Commun3, 1011 (2012). [CrossRef] [PubMed]
- S. Kim, A. Konar, W. S. Hwang, J. H. Lee, J. Lee, J. Yang, C. Jung, H. Kim, J. B. Yoo, J. Y. Choi, Y. W. Jin, S. Y. Lee, D. Jena, W. Choi, and K. Kim, “High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals,” Nat Commun3, 1011 (2012). [CrossRef] [PubMed]
- R. Yan, Q. Zhang, W. Li, I. Calizo, T. Shen, C. A. Richter, A. R. Hight-Walker, X. Liang, A. Seabaugh, D. Jena, H. G. Xing, D. J. Gundlach, and N. V. Nguyen, “Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy,” Appl. Phys. Lett.101(2), 022105 (2012). [CrossRef]
- B. Sensale-Rodriguez, R. Yan, S. Rafique, M. Zhu, W. Li, X. Liang, D. Gundlach, V. Protasenko, M. M. Kelly, D. Jena, L. Liu, and H. G. Xing, “Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators,” Nano Lett.12(9), 4518–4522 (2012). [CrossRef] [PubMed]
- B. Sensale-Rodriguez, R. Yan, S. Rafique, M. Zhu, W. Li, X. Liang, D. Gundlach, V. Protasenko, M. M. Kelly, D. Jena, L. Liu, and H. G. Xing, “Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators,” Nano Lett.12(9), 4518–4522 (2012). [CrossRef] [PubMed]
- R. Yan, Q. Zhang, W. Li, I. Calizo, T. Shen, C. A. Richter, A. R. Hight-Walker, X. Liang, A. Seabaugh, D. Jena, H. G. Xing, D. J. Gundlach, and N. V. Nguyen, “Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy,” Appl. Phys. Lett.101(2), 022105 (2012). [CrossRef]
- F. Xia, T. Mueller, R. Golizadeh-Mojarad, M. Freitag, Y. M. Lin, J. Tsang, V. Perebeinos, and P. Avouris, “Photocurrent imaging and efficient photon detection in a graphene transistor,” Nano Lett.9(3), 1039–1044 (2009). [CrossRef] [PubMed]
- A. D. Boardman, V. V. Grimalsky, Y. S. Kivshar, S. V. Koshevaya, M. Lapine, N. M. Litchinitser, V. N. Malnev, M. Noginov, Y. G. Rapoport, and V. M. Shalaev, “Active and tunable metamaterials,” Laser Photon. Rev.5(2), 287–307 (2011). [CrossRef]
- B. Sensale-Rodriguez, R. Yan, S. Rafique, M. Zhu, W. Li, X. Liang, D. Gundlach, V. Protasenko, M. M. Kelly, D. Jena, L. Liu, and H. G. Xing, “Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators,” Nano Lett.12(9), 4518–4522 (2012). [CrossRef] [PubMed]
- B. Sensale-Rodriguez, R. Yan, M. M. Kelly, T. Fang, K. Tahy, W. S. Hwang, D. Jena, L. Liu, and H. G. Xing, “Broadband graphene terahertz modulators enabled by intraband transitions,” Nat Commun3, 780 (2012). [CrossRef] [PubMed]
- B. Sensale-Rodriguez, T. Fang, R. Yan, M. M. Kelly, D. Jena, L. Liu, and H. G. Xing, “Unique prospects for graphene-based terahertz modulators,” Appl. Phys. Lett.99, 113104 (2011). [CrossRef]
- S. J. Allen, D. C. Tsui, and R. A. Logan, “Observation of the two-dimensional plasmon in silicon inversion layers,” Phys. Rev. Lett.38(17), 980–983 (1977). [CrossRef]
- K. F. Mak, M. Y. Sfeir, Y. Wu, C. H. Lui, J. A. Misewich, and T. F. Heinz, “Measurement of the Optical Conductivity of Graphene,” Phys. Rev. Lett.101(19), 196405 (2008). [CrossRef] [PubMed]
- K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS₂: a new direct-gap semiconductor,” Phys. Rev. Lett.105(13), 136805 (2010). [CrossRef] [PubMed]
- K. F. Mak, M. Y. Sfeir, Y. Wu, C. H. Lui, J. A. Misewich, and T. F. Heinz, “Measurement of the Optical Conductivity of Graphene,” Phys. Rev. Lett.101(19), 196405 (2008). [CrossRef] [PubMed]
- A. D. Boardman, V. V. Grimalsky, Y. S. Kivshar, S. V. Koshevaya, M. Lapine, N. M. Litchinitser, V. N. Malnev, M. Noginov, Y. G. Rapoport, and V. M. Shalaev, “Active and tunable metamaterials,” Laser Photon. Rev.5(2), 287–307 (2011). [CrossRef]
- T. Kleine-Ostmann, K. Pierz, G. Hein, P. Dawson, M. Marso, and M. Koch, “Spatially resolved measurements of depletion properties of large gate two-dimensional electron gas semiconductor terahertz modulators,” J. Appl. Phys.105(9), 093707 (2009). [CrossRef]
- K. F. Mak, M. Y. Sfeir, Y. Wu, C. H. Lui, J. A. Misewich, and T. F. Heinz, “Measurement of the Optical Conductivity of Graphene,” Phys. Rev. Lett.101(19), 196405 (2008). [CrossRef] [PubMed]
- F. Xia, T. Mueller, R. Golizadeh-Mojarad, M. Freitag, Y. M. Lin, J. Tsang, V. Perebeinos, and P. Avouris, “Photocurrent imaging and efficient photon detection in a graphene transistor,” Nano Lett.9(3), 1039–1044 (2009). [CrossRef] [PubMed]
- R. Yan, Q. Zhang, W. Li, I. Calizo, T. Shen, C. A. Richter, A. R. Hight-Walker, X. Liang, A. Seabaugh, D. Jena, H. G. Xing, D. J. Gundlach, and N. V. Nguyen, “Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy,” Appl. Phys. Lett.101(2), 022105 (2012). [CrossRef]
- A. D. Boardman, V. V. Grimalsky, Y. S. Kivshar, S. V. Koshevaya, M. Lapine, N. M. Litchinitser, V. N. Malnev, M. Noginov, Y. G. Rapoport, and V. M. Shalaev, “Active and tunable metamaterials,” Laser Photon. Rev.5(2), 287–307 (2011). [CrossRef]
- H. T. Chen, W. J. Padilla, M. J. Cich, A. K. Azad, R. D. Averitt, and A. J. Taylor, “A metamaterial solid-state terahertz phase modulator,” Nat. Photonics3(3), 148–151 (2009). [CrossRef]
- H. T. Chen, W. J. Padilla, J. M. O. Zide, A. C. Gossard, A. J. Taylor, and R. D. Averitt, “Active terahertz metamaterial devices,” Nature444(7119), 597–600 (2006). [CrossRef] [PubMed]
- F. Xia, T. Mueller, R. Golizadeh-Mojarad, M. Freitag, Y. M. Lin, J. Tsang, V. Perebeinos, and P. Avouris, “Photocurrent imaging and efficient photon detection in a graphene transistor,” Nano Lett.9(3), 1039–1044 (2009). [CrossRef] [PubMed]
- T. Kleine-Ostmann, K. Pierz, G. Hein, P. Dawson, M. Marso, and M. Koch, “Spatially resolved measurements of depletion properties of large gate two-dimensional electron gas semiconductor terahertz modulators,” J. Appl. Phys.105(9), 093707 (2009). [CrossRef]
- T. Kleine-Ostmann, P. Dawson, K. Pierz, G. Hein, and M. Koch, “Room-temperature operation of an electrically driven terahertz modulator,” Appl. Phys. Lett.84(18), 3555–3557 (2004). [CrossRef]
- Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F. Wang, F. Bonaccorso, D. M. Basko, and A. C. Ferrari, “Graphene mode-locked ultrafast laser,” ACS Nano4(2), 803–810 (2010). [CrossRef] [PubMed]
- Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F. Wang, F. Bonaccorso, D. M. Basko, and A. C. Ferrari, “Graphene mode-locked ultrafast laser,” ACS Nano4(2), 803–810 (2010). [CrossRef] [PubMed]
- W. S. Hwang, M. Remskar, R. Yan, V. Protasenko, K. Tahy, S. D. Chae, P. Zhao, A. Konar, H. G. Xing, A. Seabaugh, and D. Jena, “Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior,” Appl. Phys. Lett.101, 013107 (2012). [CrossRef]
- B. Sensale-Rodriguez, R. Yan, S. Rafique, M. Zhu, W. Li, X. Liang, D. Gundlach, V. Protasenko, M. M. Kelly, D. Jena, L. Liu, and H. G. Xing, “Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators,” Nano Lett.12(9), 4518–4522 (2012). [CrossRef] [PubMed]
- B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol.6(3), 147–150 (2011). [CrossRef] [PubMed]
- B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol.6(3), 147–150 (2011). [CrossRef] [PubMed]
- B. Sensale-Rodriguez, R. Yan, S. Rafique, M. Zhu, W. Li, X. Liang, D. Gundlach, V. Protasenko, M. M. Kelly, D. Jena, L. Liu, and H. G. Xing, “Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators,” Nano Lett.12(9), 4518–4522 (2012). [CrossRef] [PubMed]
- A. D. Boardman, V. V. Grimalsky, Y. S. Kivshar, S. V. Koshevaya, M. Lapine, N. M. Litchinitser, V. N. Malnev, M. Noginov, Y. G. Rapoport, and V. M. Shalaev, “Active and tunable metamaterials,” Laser Photon. Rev.5(2), 287–307 (2011). [CrossRef]
- W. S. Hwang, M. Remskar, R. Yan, V. Protasenko, K. Tahy, S. D. Chae, P. Zhao, A. Konar, H. G. Xing, A. Seabaugh, and D. Jena, “Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior,” Appl. Phys. Lett.101, 013107 (2012). [CrossRef]
- R. Yan, Q. Zhang, W. Li, I. Calizo, T. Shen, C. A. Richter, A. R. Hight-Walker, X. Liang, A. Seabaugh, D. Jena, H. G. Xing, D. J. Gundlach, and N. V. Nguyen, “Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy,” Appl. Phys. Lett.101(2), 022105 (2012). [CrossRef]
- R. Yan, Q. Zhang, W. Li, I. Calizo, T. Shen, C. A. Richter, A. R. Hight-Walker, X. Liang, A. Seabaugh, D. Jena, H. G. Xing, D. J. Gundlach, and N. V. Nguyen, “Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy,” Appl. Phys. Lett.101(2), 022105 (2012). [CrossRef]
- W. S. Hwang, M. Remskar, R. Yan, V. Protasenko, K. Tahy, S. D. Chae, P. Zhao, A. Konar, H. G. Xing, A. Seabaugh, and D. Jena, “Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior,” Appl. Phys. Lett.101, 013107 (2012). [CrossRef]
- B. Sensale-Rodriguez, R. Yan, M. M. Kelly, T. Fang, K. Tahy, W. S. Hwang, D. Jena, L. Liu, and H. G. Xing, “Broadband graphene terahertz modulators enabled by intraband transitions,” Nat Commun3, 780 (2012). [CrossRef] [PubMed]
- B. Sensale-Rodriguez, R. Yan, S. Rafique, M. Zhu, W. Li, X. Liang, D. Gundlach, V. Protasenko, M. M. Kelly, D. Jena, L. Liu, and H. G. Xing, “Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators,” Nano Lett.12(9), 4518–4522 (2012). [CrossRef] [PubMed]
- B. Sensale-Rodriguez, T. Fang, R. Yan, M. M. Kelly, D. Jena, L. Liu, and H. G. Xing, “Unique prospects for graphene-based terahertz modulators,” Appl. Phys. Lett.99, 113104 (2011). [CrossRef]
- K. F. Mak, M. Y. Sfeir, Y. Wu, C. H. Lui, J. A. Misewich, and T. F. Heinz, “Measurement of the Optical Conductivity of Graphene,” Phys. Rev. Lett.101(19), 196405 (2008). [CrossRef] [PubMed]
- A. D. Boardman, V. V. Grimalsky, Y. S. Kivshar, S. V. Koshevaya, M. Lapine, N. M. Litchinitser, V. N. Malnev, M. Noginov, Y. G. Rapoport, and V. M. Shalaev, “Active and tunable metamaterials,” Laser Photon. Rev.5(2), 287–307 (2011). [CrossRef]
- K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS₂: a new direct-gap semiconductor,” Phys. Rev. Lett.105(13), 136805 (2010). [CrossRef] [PubMed]
- R. Yan, Q. Zhang, W. Li, I. Calizo, T. Shen, C. A. Richter, A. R. Hight-Walker, X. Liang, A. Seabaugh, D. Jena, H. G. Xing, D. J. Gundlach, and N. V. Nguyen, “Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy,” Appl. Phys. Lett.101(2), 022105 (2012). [CrossRef]
- P. Tassin, T. Koschny, M. Kafesaki, and C. M. Soukoulis, “A comparison of graphene, superconductors and metals as conductors for metamaterials and plasmonics,” Nat. Photonics6(4), 259–264 (2012). [CrossRef]
- Y. W. Tan, Y. Zhang, K. Bolotin, Y. Zhao, S. Adam, E. H. Hwang, S. Das Sarma, H. L. Stormer, and P. Kim, “Measurement of scattering rate and minimum conductivity in graphene,” Phys. Rev. Lett.99(24), 246803 (2007). [CrossRef] [PubMed]
- Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F. Wang, F. Bonaccorso, D. M. Basko, and A. C. Ferrari, “Graphene mode-locked ultrafast laser,” ACS Nano4(2), 803–810 (2010). [CrossRef] [PubMed]
- B. Sensale-Rodriguez, R. Yan, M. M. Kelly, T. Fang, K. Tahy, W. S. Hwang, D. Jena, L. Liu, and H. G. Xing, “Broadband graphene terahertz modulators enabled by intraband transitions,” Nat Commun3, 780 (2012). [CrossRef] [PubMed]
- W. S. Hwang, M. Remskar, R. Yan, V. Protasenko, K. Tahy, S. D. Chae, P. Zhao, A. Konar, H. G. Xing, A. Seabaugh, and D. Jena, “Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior,” Appl. Phys. Lett.101, 013107 (2012). [CrossRef]
- Y. W. Tan, Y. Zhang, K. Bolotin, Y. Zhao, S. Adam, E. H. Hwang, S. Das Sarma, H. L. Stormer, and P. Kim, “Measurement of scattering rate and minimum conductivity in graphene,” Phys. Rev. Lett.99(24), 246803 (2007). [CrossRef] [PubMed]
- P. Tassin, T. Koschny, M. Kafesaki, and C. M. Soukoulis, “A comparison of graphene, superconductors and metals as conductors for metamaterials and plasmonics,” Nat. Photonics6(4), 259–264 (2012). [CrossRef]
- H. T. Chen, W. J. Padilla, M. J. Cich, A. K. Azad, R. D. Averitt, and A. J. Taylor, “A metamaterial solid-state terahertz phase modulator,” Nat. Photonics3(3), 148–151 (2009). [CrossRef]
- H. T. Chen, W. J. Padilla, J. M. O. Zide, A. C. Gossard, A. J. Taylor, and R. D. Averitt, “Active terahertz metamaterial devices,” Nature444(7119), 597–600 (2006). [CrossRef] [PubMed]
- M. Tonouchi, “Cutting-edge terahertz technology,” Nat. Photonics1(2), 97–105 (2007). [CrossRef]
- Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F. Wang, F. Bonaccorso, D. M. Basko, and A. C. Ferrari, “Graphene mode-locked ultrafast laser,” ACS Nano4(2), 803–810 (2010). [CrossRef] [PubMed]
- F. Xia, T. Mueller, R. Golizadeh-Mojarad, M. Freitag, Y. M. Lin, J. Tsang, V. Perebeinos, and P. Avouris, “Photocurrent imaging and efficient photon detection in a graphene transistor,” Nano Lett.9(3), 1039–1044 (2009). [CrossRef] [PubMed]
- S. J. Allen, D. C. Tsui, and R. A. Logan, “Observation of the two-dimensional plasmon in silicon inversion layers,” Phys. Rev. Lett.38(17), 980–983 (1977). [CrossRef]
- Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F. Wang, F. Bonaccorso, D. M. Basko, and A. C. Ferrari, “Graphene mode-locked ultrafast laser,” ACS Nano4(2), 803–810 (2010). [CrossRef] [PubMed]
- K. F. Mak, M. Y. Sfeir, Y. Wu, C. H. Lui, J. A. Misewich, and T. F. Heinz, “Measurement of the Optical Conductivity of Graphene,” Phys. Rev. Lett.101(19), 196405 (2008). [CrossRef] [PubMed]
- F. Xia, T. Mueller, R. Golizadeh-Mojarad, M. Freitag, Y. M. Lin, J. Tsang, V. Perebeinos, and P. Avouris, “Photocurrent imaging and efficient photon detection in a graphene transistor,” Nano Lett.9(3), 1039–1044 (2009). [CrossRef] [PubMed]
- B. Sensale-Rodriguez, R. Yan, S. Rafique, M. Zhu, W. Li, X. Liang, D. Gundlach, V. Protasenko, M. M. Kelly, D. Jena, L. Liu, and H. G. Xing, “Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators,” Nano Lett.12(9), 4518–4522 (2012). [CrossRef] [PubMed]
- B. Sensale-Rodriguez, R. Yan, M. M. Kelly, T. Fang, K. Tahy, W. S. Hwang, D. Jena, L. Liu, and H. G. Xing, “Broadband graphene terahertz modulators enabled by intraband transitions,” Nat Commun3, 780 (2012). [CrossRef] [PubMed]
- R. Yan, Q. Zhang, W. Li, I. Calizo, T. Shen, C. A. Richter, A. R. Hight-Walker, X. Liang, A. Seabaugh, D. Jena, H. G. Xing, D. J. Gundlach, and N. V. Nguyen, “Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy,” Appl. Phys. Lett.101(2), 022105 (2012). [CrossRef]
- W. S. Hwang, M. Remskar, R. Yan, V. Protasenko, K. Tahy, S. D. Chae, P. Zhao, A. Konar, H. G. Xing, A. Seabaugh, and D. Jena, “Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior,” Appl. Phys. Lett.101, 013107 (2012). [CrossRef]
- B. Sensale-Rodriguez, T. Fang, R. Yan, M. M. Kelly, D. Jena, L. Liu, and H. G. Xing, “Unique prospects for graphene-based terahertz modulators,” Appl. Phys. Lett.99, 113104 (2011). [CrossRef]
- B. Sensale-Rodriguez, R. Yan, M. M. Kelly, T. Fang, K. Tahy, W. S. Hwang, D. Jena, L. Liu, and H. G. Xing, “Broadband graphene terahertz modulators enabled by intraband transitions,” Nat Commun3, 780 (2012). [CrossRef] [PubMed]
- B. Sensale-Rodriguez, R. Yan, S. Rafique, M. Zhu, W. Li, X. Liang, D. Gundlach, V. Protasenko, M. M. Kelly, D. Jena, L. Liu, and H. G. Xing, “Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators,” Nano Lett.12(9), 4518–4522 (2012). [CrossRef] [PubMed]
- R. Yan, Q. Zhang, W. Li, I. Calizo, T. Shen, C. A. Richter, A. R. Hight-Walker, X. Liang, A. Seabaugh, D. Jena, H. G. Xing, D. J. Gundlach, and N. V. Nguyen, “Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy,” Appl. Phys. Lett.101(2), 022105 (2012). [CrossRef]
- W. S. Hwang, M. Remskar, R. Yan, V. Protasenko, K. Tahy, S. D. Chae, P. Zhao, A. Konar, H. G. Xing, A. Seabaugh, and D. Jena, “Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior,” Appl. Phys. Lett.101, 013107 (2012). [CrossRef]
- B. Sensale-Rodriguez, T. Fang, R. Yan, M. M. Kelly, D. Jena, L. Liu, and H. G. Xing, “Unique prospects for graphene-based terahertz modulators,” Appl. Phys. Lett.99, 113104 (2011). [CrossRef]
- S. Kim, A. Konar, W. S. Hwang, J. H. Lee, J. Lee, J. Yang, C. Jung, H. Kim, J. B. Yoo, J. Y. Choi, Y. W. Jin, S. Y. Lee, D. Jena, W. Choi, and K. Kim, “High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals,” Nat Commun3, 1011 (2012). [CrossRef] [PubMed]
- S. Kim, A. Konar, W. S. Hwang, J. H. Lee, J. Lee, J. Yang, C. Jung, H. Kim, J. B. Yoo, J. Y. Choi, Y. W. Jin, S. Y. Lee, D. Jena, W. Choi, and K. Kim, “High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals,” Nat Commun3, 1011 (2012). [CrossRef] [PubMed]
- R. Yan, Q. Zhang, W. Li, I. Calizo, T. Shen, C. A. Richter, A. R. Hight-Walker, X. Liang, A. Seabaugh, D. Jena, H. G. Xing, D. J. Gundlach, and N. V. Nguyen, “Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy,” Appl. Phys. Lett.101(2), 022105 (2012). [CrossRef]
- Y. W. Tan, Y. Zhang, K. Bolotin, Y. Zhao, S. Adam, E. H. Hwang, S. Das Sarma, H. L. Stormer, and P. Kim, “Measurement of scattering rate and minimum conductivity in graphene,” Phys. Rev. Lett.99(24), 246803 (2007). [CrossRef] [PubMed]
- W. S. Hwang, M. Remskar, R. Yan, V. Protasenko, K. Tahy, S. D. Chae, P. Zhao, A. Konar, H. G. Xing, A. Seabaugh, and D. Jena, “Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior,” Appl. Phys. Lett.101, 013107 (2012). [CrossRef]
- Y. W. Tan, Y. Zhang, K. Bolotin, Y. Zhao, S. Adam, E. H. Hwang, S. Das Sarma, H. L. Stormer, and P. Kim, “Measurement of scattering rate and minimum conductivity in graphene,” Phys. Rev. Lett.99(24), 246803 (2007). [CrossRef] [PubMed]
- B. Sensale-Rodriguez, R. Yan, S. Rafique, M. Zhu, W. Li, X. Liang, D. Gundlach, V. Protasenko, M. M. Kelly, D. Jena, L. Liu, and H. G. Xing, “Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators,” Nano Lett.12(9), 4518–4522 (2012). [CrossRef] [PubMed]
- H. T. Chen, W. J. Padilla, J. M. O. Zide, A. C. Gossard, A. J. Taylor, and R. D. Averitt, “Active terahertz metamaterial devices,” Nature444(7119), 597–600 (2006). [CrossRef] [PubMed]
ACS Nano
- Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F. Wang, F. Bonaccorso, D. M. Basko, and A. C. Ferrari, “Graphene mode-locked ultrafast laser,” ACS Nano4(2), 803–810 (2010). [CrossRef] [PubMed]
Appl. Phys. Lett.
- R. Yan, Q. Zhang, W. Li, I. Calizo, T. Shen, C. A. Richter, A. R. Hight-Walker, X. Liang, A. Seabaugh, D. Jena, H. G. Xing, D. J. Gundlach, and N. V. Nguyen, “Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy,” Appl. Phys. Lett.101(2), 022105 (2012). [CrossRef]
- T. Kleine-Ostmann, P. Dawson, K. Pierz, G. Hein, and M. Koch, “Room-temperature operation of an electrically driven terahertz modulator,” Appl. Phys. Lett.84(18), 3555–3557 (2004). [CrossRef]
- B. Sensale-Rodriguez, T. Fang, R. Yan, M. M. Kelly, D. Jena, L. Liu, and H. G. Xing, “Unique prospects for graphene-based terahertz modulators,” Appl. Phys. Lett.99, 113104 (2011). [CrossRef]
- W. S. Hwang, M. Remskar, R. Yan, V. Protasenko, K. Tahy, S. D. Chae, P. Zhao, A. Konar, H. G. Xing, A. Seabaugh, and D. Jena, “Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior,” Appl. Phys. Lett.101, 013107 (2012). [CrossRef]
J. Appl. Phys.
- T. Kleine-Ostmann, K. Pierz, G. Hein, P. Dawson, M. Marso, and M. Koch, “Spatially resolved measurements of depletion properties of large gate two-dimensional electron gas semiconductor terahertz modulators,” J. Appl. Phys.105(9), 093707 (2009). [CrossRef]
Laser Photon. Rev.
- A. D. Boardman, V. V. Grimalsky, Y. S. Kivshar, S. V. Koshevaya, M. Lapine, N. M. Litchinitser, V. N. Malnev, M. Noginov, Y. G. Rapoport, and V. M. Shalaev, “Active and tunable metamaterials,” Laser Photon. Rev.5(2), 287–307 (2011). [CrossRef]
Nano Lett.
- B. Sensale-Rodriguez, R. Yan, S. Rafique, M. Zhu, W. Li, X. Liang, D. Gundlach, V. Protasenko, M. M. Kelly, D. Jena, L. Liu, and H. G. Xing, “Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators,” Nano Lett.12(9), 4518–4522 (2012). [CrossRef] [PubMed]
- F. Xia, T. Mueller, R. Golizadeh-Mojarad, M. Freitag, Y. M. Lin, J. Tsang, V. Perebeinos, and P. Avouris, “Photocurrent imaging and efficient photon detection in a graphene transistor,” Nano Lett.9(3), 1039–1044 (2009). [CrossRef] [PubMed]
Nat Commun
- B. Sensale-Rodriguez, R. Yan, M. M. Kelly, T. Fang, K. Tahy, W. S. Hwang, D. Jena, L. Liu, and H. G. Xing, “Broadband graphene terahertz modulators enabled by intraband transitions,” Nat Commun3, 780 (2012). [CrossRef] [PubMed]
- S. Kim, A. Konar, W. S. Hwang, J. H. Lee, J. Lee, J. Yang, C. Jung, H. Kim, J. B. Yoo, J. Y. Choi, Y. W. Jin, S. Y. Lee, D. Jena, W. Choi, and K. Kim, “High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals,” Nat Commun3, 1011 (2012). [CrossRef] [PubMed]
Nat. Nanotechnol.
- B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol.6(3), 147–150 (2011). [CrossRef] [PubMed]
Nat. Photonics
- H. T. Chen, W. J. Padilla, M. J. Cich, A. K. Azad, R. D. Averitt, and A. J. Taylor, “A metamaterial solid-state terahertz phase modulator,” Nat. Photonics3(3), 148–151 (2009). [CrossRef]
- P. Tassin, T. Koschny, M. Kafesaki, and C. M. Soukoulis, “A comparison of graphene, superconductors and metals as conductors for metamaterials and plasmonics,” Nat. Photonics6(4), 259–264 (2012). [CrossRef]
- M. Tonouchi, “Cutting-edge terahertz technology,” Nat. Photonics1(2), 97–105 (2007). [CrossRef]
Nature
- H. T. Chen, W. J. Padilla, J. M. O. Zide, A. C. Gossard, A. J. Taylor, and R. D. Averitt, “Active terahertz metamaterial devices,” Nature444(7119), 597–600 (2006). [CrossRef] [PubMed]
Phys. Rev. Lett.
- K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS₂: a new direct-gap semiconductor,” Phys. Rev. Lett.105(13), 136805 (2010). [CrossRef] [PubMed]
- K. F. Mak, M. Y. Sfeir, Y. Wu, C. H. Lui, J. A. Misewich, and T. F. Heinz, “Measurement of the Optical Conductivity of Graphene,” Phys. Rev. Lett.101(19), 196405 (2008). [CrossRef] [PubMed]
- S. J. Allen, D. C. Tsui, and R. A. Logan, “Observation of the two-dimensional plasmon in silicon inversion layers,” Phys. Rev. Lett.38(17), 980–983 (1977). [CrossRef]
- Y. W. Tan, Y. Zhang, K. Bolotin, Y. Zhao, S. Adam, E. H. Hwang, S. Das Sarma, H. L. Stormer, and P. Kim, “Measurement of scattering rate and minimum conductivity in graphene,” Phys. Rev. Lett.99(24), 246803 (2007). [CrossRef] [PubMed]
Other
- B. Sensale-Rodriguez, R. Yan, S. Rafique, M. Zhu, V. Protasenko, D. Jena, L. Liu, and H. G. Xing, ‘Exceptional Tunability of THz Reflectance in Graphene Structures”, IRMMWTHz 2012, Wollongong, Australia, 2012.
2012, Sensale-Rodriguez, Nat Commun
- B. Sensale-Rodriguez, R. Yan, M. M. Kelly, T. Fang, K. Tahy, W. S. Hwang, D. Jena, L. Liu, and H. G. Xing, “Broadband graphene terahertz modulators enabled by intraband transitions,” Nat Commun3, 780 (2012). [CrossRef] [PubMed]
- B. Sensale-Rodriguez, R. Yan, S. Rafique, M. Zhu, W. Li, X. Liang, D. Gundlach, V. Protasenko, M. M. Kelly, D. Jena, L. Liu, and H. G. Xing, “Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators,” Nano Lett.12(9), 4518–4522 (2012). [CrossRef] [PubMed]
- R. Yan, Q. Zhang, W. Li, I. Calizo, T. Shen, C. A. Richter, A. R. Hight-Walker, X. Liang, A. Seabaugh, D. Jena, H. G. Xing, D. J. Gundlach, and N. V. Nguyen, “Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy,” Appl. Phys. Lett.101(2), 022105 (2012). [CrossRef]
- P. Tassin, T. Koschny, M. Kafesaki, and C. M. Soukoulis, “A comparison of graphene, superconductors and metals as conductors for metamaterials and plasmonics,” Nat. Photonics6(4), 259–264 (2012). [CrossRef]
- W. S. Hwang, M. Remskar, R. Yan, V. Protasenko, K. Tahy, S. D. Chae, P. Zhao, A. Konar, H. G. Xing, A. Seabaugh, and D. Jena, “Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior,” Appl. Phys. Lett.101, 013107 (2012). [CrossRef]
- S. Kim, A. Konar, W. S. Hwang, J. H. Lee, J. Lee, J. Yang, C. Jung, H. Kim, J. B. Yoo, J. Y. Choi, Y. W. Jin, S. Y. Lee, D. Jena, W. Choi, and K. Kim, “High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals,” Nat Commun3, 1011 (2012). [CrossRef] [PubMed]
- B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol.6(3), 147–150 (2011). [CrossRef] [PubMed]
- B. Sensale-Rodriguez, T. Fang, R. Yan, M. M. Kelly, D. Jena, L. Liu, and H. G. Xing, “Unique prospects for graphene-based terahertz modulators,” Appl. Phys. Lett.99, 113104 (2011). [CrossRef]
- A. D. Boardman, V. V. Grimalsky, Y. S. Kivshar, S. V. Koshevaya, M. Lapine, N. M. Litchinitser, V. N. Malnev, M. Noginov, Y. G. Rapoport, and V. M. Shalaev, “Active and tunable metamaterials,” Laser Photon. Rev.5(2), 287–307 (2011). [CrossRef]
- K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS₂: a new direct-gap semiconductor,” Phys. Rev. Lett.105(13), 136805 (2010). [CrossRef] [PubMed]
- Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F. Wang, F. Bonaccorso, D. M. Basko, and A. C. Ferrari, “Graphene mode-locked ultrafast laser,” ACS Nano4(2), 803–810 (2010). [CrossRef] [PubMed]
- H. T. Chen, W. J. Padilla, M. J. Cich, A. K. Azad, R. D. Averitt, and A. J. Taylor, “A metamaterial solid-state terahertz phase modulator,” Nat. Photonics3(3), 148–151 (2009). [CrossRef]
- T. Kleine-Ostmann, K. Pierz, G. Hein, P. Dawson, M. Marso, and M. Koch, “Spatially resolved measurements of depletion properties of large gate two-dimensional electron gas semiconductor terahertz modulators,” J. Appl. Phys.105(9), 093707 (2009). [CrossRef]
- F. Xia, T. Mueller, R. Golizadeh-Mojarad, M. Freitag, Y. M. Lin, J. Tsang, V. Perebeinos, and P. Avouris, “Photocurrent imaging and efficient photon detection in a graphene transistor,” Nano Lett.9(3), 1039–1044 (2009). [CrossRef] [PubMed]
- K. F. Mak, M. Y. Sfeir, Y. Wu, C. H. Lui, J. A. Misewich, and T. F. Heinz, “Measurement of the Optical Conductivity of Graphene,” Phys. Rev. Lett.101(19), 196405 (2008). [CrossRef] [PubMed]
- M. Tonouchi, “Cutting-edge terahertz technology,” Nat. Photonics1(2), 97–105 (2007). [CrossRef]
- Y. W. Tan, Y. Zhang, K. Bolotin, Y. Zhao, S. Adam, E. H. Hwang, S. Das Sarma, H. L. Stormer, and P. Kim, “Measurement of scattering rate and minimum conductivity in graphene,” Phys. Rev. Lett.99(24), 246803 (2007). [CrossRef] [PubMed]
- H. T. Chen, W. J. Padilla, J. M. O. Zide, A. C. Gossard, A. J. Taylor, and R. D. Averitt, “Active terahertz metamaterial devices,” Nature444(7119), 597–600 (2006). [CrossRef] [PubMed]
- T. Kleine-Ostmann, P. Dawson, K. Pierz, G. Hein, and M. Koch, “Room-temperature operation of an electrically driven terahertz modulator,” Appl. Phys. Lett.84(18), 3555–3557 (2004). [CrossRef]
- S. J. Allen, D. C. Tsui, and R. A. Logan, “Observation of the two-dimensional plasmon in silicon inversion layers,” Phys. Rev. Lett.38(17), 980–983 (1977). [CrossRef]
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