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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 28 — Dec. 31, 2012
  • pp: 29338–29346

Optics InfoBase > Optics Express > Volume 20 > Issue 28 > Page 29338

A critically coupled Germanium photodetector under vertical illumination

Tsung-Ting Wu, Ching-Yang Chou, Ming-Chang M. Lee, and Neil Na  »View Author Affiliations


Optics Express, Vol. 20, Issue 28, pp. 29338-29346 (2012)
http://dx.doi.org/10.1364/OE.20.029338


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Abstract

We propose and study a practical design of a Germanium photodetector implemented on a Silicon-on-insulator substrate to reach the critical coupling regime under vertical illumination at 1310 nm wavelength. With appropriate optimization procedures, a high efficiency bandwidth product larger than 50 GHz and a large 3dB spectral full width around 30 nm can be obtained given realistic material parameters and fabrication constraints. Our device is fully compatible to the state-of-art CMOS process technology, and may serve as a high performance, low cost solution for the optical receiver in Silicon photonics based optical interconnects.

© 2012 OSA

OCIS Codes
(040.5160) Detectors : Photodetectors
(250.0250) Optoelectronics : Optoelectronics

ToC Category:
Detectors

History
Original Manuscript: November 5, 2012
Revised Manuscript: December 10, 2012
Manuscript Accepted: December 10, 2012
Published: December 18, 2012

Citation
Tsung-Ting Wu, Ching-Yang Chou, Ming-Chang M. Lee, and Neil Na, "A critically coupled Germanium photodetector under vertical illumination," Opt. Express 20, 29338-29346 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-28-29338


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References

  1. J. Michel, J. Liu, and L. C. Kimerling, “High-performance Ge-on-Si photodetectors,” Nat. Photonics4(8), 527–534 (2010). [CrossRef]
  2. H. Yu, S. Ren, W. S. Jung, A. K. Okyay, D. A. B. Miller, and K. C. Saraswat, “High-efficiency p-i-n photodetectors on selective-area-grown Ge for monolithic integration,” IEEE Electron Device Lett.30(11), 1161–1163 (2009). [CrossRef]
  3. J. Joo, S. Kim, I. G. Kim, K.-S. Jang, and G. Kim, “High-sensitivity 10 Gbps Ge-on-Si photoreceiver operating at λ~1.55 μm,” Opt. Express18(16), 16474–16479 (2010). [CrossRef] [PubMed]
  4. J. Osmond, L. Vivien, J.-M. Fédéli, D. Marris-Morini, P. Crozat, J.-F. Damlencourt, E. Cassan, and Y. Lecunff, “40 Gb/s surface-illuminated Ge-on-Si photodetectors,” Appl. Phys. Lett.95(15), 151116 (2009). [CrossRef]
  5. S. Klinger, M. Berroth, M. Kaschel, M. Oehme, and E. Kasper, “Ge-on-Si p-i-n photodiodes with a 3-dB bandwidth of 49 GHz,” IEEE Photon. Technol. Lett.21(13), 920–922 (2009). [CrossRef]
  6. T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate,” Opt. Express15(21), 13965–13971 (2007). [CrossRef] [PubMed]
  7. L. Colace, V. Sorianello, M. Balbi, and G. Assanto, “Germanium near infrared detector in Silicon on insulator,” Appl. Phys. Lett.91(2), 021107 (2007). [CrossRef]
  8. D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section Silicon-on-insulator waveguide,” Appl. Phys. Lett.95(26), 261105 (2009). [CrossRef]
  9. C. T. DeRose, D. C. Trotter, W. A. Zortman, A. L. Starbuck, M. Fisher, M. R. Watts, and P. S. Davids, “Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current,” Opt. Express19(25), 24897–24904 (2011). [CrossRef] [PubMed]
  10. A. Barkai, A. Liu, D. Kim, R. Cohen, N. Elek, H.-H. Chang, B. H. Malik, R. Gabay, R. Jones, M. Paniccia, and N. Izhaky, “Double-stage taper for coupling between SOI waveguides and single-mode fiber,” J. Lightwave Technol.26(24), 3860–3865 (2008). [CrossRef]
  11. N. Na and T. Yin, “Misalignment-tolerant spot-size converter for efficient coupling between single-mode fibers and integrated optical receivers,” IEEE Photon. J.4(1), 187–193 (2012). [CrossRef]
  12. D. Vermeulen, S. Selvaraja, P. Verheyen, G. Lepage, W. Bogaerts, P. Absil, D. Van Thourhout, and G. Roelkens, “High-efficiency fiber-to-chip grating couplers realized using an advanced CMOS-compatible Silicon-on-insulator platform,” Opt. Express18(17), 18278–18283 (2010). [CrossRef] [PubMed]
  13. N. Na, H. Frish, I.-W. Hsieh, O. Harel, R. George, A. Barkai, and H. Rong, “Efficient broadband Silicon-on-insulator grating coupler with low backreflection,” Opt. Lett.36(11), 2101–2103 (2011). [CrossRef] [PubMed]
  14. K. Kishino, M. S. Ünlü, J.-I. Chyi, J. Reed, L. Arsenault, and H. Morkoc, “Resonant cavity-enhanced (RCE) photodetectors,” IEEE J. Quantum Electron.27(8), 2025–2034 (1991). [CrossRef]
  15. M. S. Ünlü and S. Strite, “Resonant cavity enhanced photonic devices,” Appl. Phys. Rev.78(2), 607–639 (1995). [CrossRef]
  16. M. Cai, O. Painter, and K. J. Vahala, “Observation of critical coupling in a fiber taper to a silica-microsphere whispering-gallery mode system,” Phys. Rev. Lett.85(1), 74–77 (2000). [CrossRef] [PubMed]
  17. A. Yariv, “Critical coupling and its control in optical waveguide-ring resonator systems,” IEEE Photon. Technol. Lett.14(4), 483–485 (2002). [CrossRef]
  18. M. K. Emsley, O. Dosunmu, and M. S. Ünlü, “High-speed resonant-cavity-enhanced Silicon photodetectors on reflecting Silicon-on-insulator substrates,” IEEE Photon. Technol. Lett.14(4), 519–521 (2002). [CrossRef]
  19. O. I. Dosunmu, D. D. Cannon, M. K. Emsley, L. C. Kimerling, and M. S. Ünlü, “High-speed resonant cavity enhanced Ge photodetectors on reflecting Si substrates for 1550-nm operation,” IEEE Photon. Technol. Lett.17(1), 175–177 (2005). [CrossRef]
  20. M. Morse, O. Dosunmu, G. Sarid, and Y. Chetrit, “Performance of Ge-on-Si p-i-n photodetectors for standard eeceiver modules,” IEEE Photon. Technol. Lett.18(23), 2442–2444 (2006). [CrossRef]
  21. S. M. Sze, Physics of Semiconductor Device, 2nd ed. (John Wiley & Sons, 1981).
  22. C.-K. Tseng, J.-D. Tian, W.-C. Hung, K.-N. Ku, C.-W. Tseng, Y.-S. Liu, N. Na, and M.-C. M. Lee, “Self-aligned microbonded Ge/Si PIN waveguide photodetector,” post-deadline session, 9th IEEE International Conference on Group IV Photonics (GFP), 29–31 Aug. (2012).
  23. Lumerical Solutions, Inc., http://www.lumerical.com/ .
  24. C.-H. Chen, K. Tetz, and Y. Fainman, “Resonant-cavity-enhanced p-i-n photodiode with a broad quantum-efficiency spectrum by use of an anomalous-dispersion mirror,” Appl. Opt.44(29), 6131–6140 (2005). [CrossRef] [PubMed]

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