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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 28 — Dec. 31, 2012
  • pp: 29338–29346

A critically coupled Germanium photodetector under vertical illumination

Tsung-Ting Wu, Ching-Yang Chou, Ming-Chang M. Lee, and Neil Na  »View Author Affiliations

Optics Express, Vol. 20, Issue 28, pp. 29338-29346 (2012)

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We propose and study a practical design of a Germanium photodetector implemented on a Silicon-on-insulator substrate to reach the critical coupling regime under vertical illumination at 1310 nm wavelength. With appropriate optimization procedures, a high efficiency bandwidth product larger than 50 GHz and a large 3dB spectral full width around 30 nm can be obtained given realistic material parameters and fabrication constraints. Our device is fully compatible to the state-of-art CMOS process technology, and may serve as a high performance, low cost solution for the optical receiver in Silicon photonics based optical interconnects.

© 2012 OSA

OCIS Codes
(040.5160) Detectors : Photodetectors
(250.0250) Optoelectronics : Optoelectronics

ToC Category:

Original Manuscript: November 5, 2012
Revised Manuscript: December 10, 2012
Manuscript Accepted: December 10, 2012
Published: December 18, 2012

Tsung-Ting Wu, Ching-Yang Chou, Ming-Chang M. Lee, and Neil Na, "A critically coupled Germanium photodetector under vertical illumination," Opt. Express 20, 29338-29346 (2012)

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