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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 28 — Dec. 31, 2012
  • pp: 29500–29506

Adiabatic mode coupling between SiGe photonic devices and SOI waveguides

L. Lever, Z. Ikonić, and R. W. Kelsall  »View Author Affiliations

Optics Express, Vol. 20, Issue 28, pp. 29500-29506 (2012)

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We describe the coupling between optical modes of silicon-on-insulator SOI waveguides and Ge/SiGe quantum well modulators using an eigenmode expansion method. Laterally tapered features in the epitaxial layers are investigated for adiabatic optical coupling, and we find that there is a critical width range of the Ge/SiGe structure of 200–300 nm, where the taper angle should be minimised. We identify optimised taper profiles, which, for 1-μm-wide waveguides, allow the length of an adiabatic taper to be reduced from 250 μm for a simple linear profile to 40 μm for the optimised structure.

© 2012 OSA

OCIS Codes
(230.4110) Optical devices : Modulators
(230.7370) Optical devices : Waveguides
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

ToC Category:
Optical Devices

Original Manuscript: October 9, 2012
Revised Manuscript: December 5, 2012
Manuscript Accepted: December 10, 2012
Published: December 19, 2012

L. Lever, Z. Ikonić, and R. W. Kelsall, "Adiabatic mode coupling between SiGe photonic devices and SOI waveguides," Opt. Express 20, 29500-29506 (2012)

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