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CMOS buried Quad p-n junction photodetector for multi-wavelength analysis |
Optics Express, Vol. 20, Issue 3, pp. 2053-2061 (2012)
http://dx.doi.org/10.1364/OE.20.002053
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Abstract
This paper presents a buried quad p-n junction (BQJ) photodetector fabricated with a HV (high-voltage) CMOS process. Multiple buried junction photodetectors are wavelength-sensitive devices developed for spectral analysis applications where a compact integrated solution is preferred over systems involving bulk optics or a spectrometer due to physical size limitations. The BQJ device presented here is designed for chip-based biochemical analyses using simultaneous fluorescence labeling of multiple analytes such as with advanced labs-on-chip or miniaturized photonics-based biosensors. Modeling and experimental measurements of the spectral response of the device are presented. A matrix-based method for estimating individual spectral components in a compound spectrum is described. The device and analysis method are validated via a test setup using individually modulated LEDs to simulate light from 4-component fluorescence emission.
© 2012 OSA
OCIS Codes
(040.5160) Detectors : Photodetectors
(170.6280) Medical optics and biotechnology : Spectroscopy, fluorescence and luminescence
(330.6180) Vision, color, and visual optics : Spectral discrimination
(110.4234) Imaging systems : Multispectral and hyperspectral imaging
ToC Category:
Detectors
History
Original Manuscript: September 20, 2011
Revised Manuscript: December 21, 2011
Manuscript Accepted: January 4, 2012
Published: January 17, 2012
Virtual Issues
Vol. 7, Iss. 3 Virtual Journal for Biomedical Optics
Citation
Charles Richard, Thierry Courcier, Patrick Pittet, Stéphane Martel, Luc Ouellet, Guo-Neng Lu, Vincent Aimez, and Paul G. Charette, "CMOS buried Quad p-n junction photodetector for multi-wavelength analysis," Opt. Express 20, 2053-2061 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-3-2053
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References
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