Ultrathin broadband nearly perfect absorber with symmetrical coherent illumination

doi:10.1364/OE.20.002246

Ultrathin broadband nearly perfect absorber with symmetrical coherent illumination

Mingbo Pu, Qin Feng, Min Wang, Chenggang Hu, Cheng Huang, Xiaoliang Ma, Zeyu Zhao, Changtao Wang, and Xiangang Luo »View Author Affiliations

Optics Express, Vol. 20, Issue 3, pp. 2246-2254 (2012)
http://dx.doi.org/10.1364/OE.20.002246

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Abstract

As highlighted by recent articles [Phys. Rev. Lett. 105, 053901 (2010) and Science 331, 889-892 (2011)], the coherent control of narrowband perfect absorption in intrinsic silicon slab has attracted much attention. In this paper, we demonstrate that broadband coherent perfect absorber (CPA) can be achieved by heavily doping an ultrathin silicon film. Two distinct perfect absorption regimes are derived with extremely broad and moderately narrow bandwidth under symmetrical coherent illumination. The large enhancement of bandwidth may open up new avenues for broadband applications. Subsequently, interferometric method is used to control the absorption coherently with extremely large contrast between the maximum and minimum absorptance. Compared with the results in literatures, the thin film CPAs proposed here show much more flexibility in both operation frequency and bandwidth.

OCIS Codes
(310.3915) Thin films : Metallic, opaque, and absorbing coatings
(160.3918) Materials : Metamaterials
(050.6624) Diffraction and gratings : Subwavelength structures

ToC Category:
Thin Films

History
Original Manuscript: November 16, 2011
Revised Manuscript: December 22, 2011
Manuscript Accepted: December 23, 2011
Published: January 17, 2012

Citation
Mingbo Pu, Qin Feng, Min Wang, Chenggang Hu, Cheng Huang, Xiaoliang Ma, Zeyu Zhao, Changtao Wang, and Xiangang Luo, "Ultrathin broadband nearly perfect absorber with symmetrical coherent illumination," Opt. Express 20, 2246-2254 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-3-2246

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References

Y. D. Chong, L. Ge, H. Cao, and A. D. Stone, “Coherent perfect absorbers: time-reversed lasers,” Phys. Rev. Lett.105(5), 053901 (2010). [CrossRef] [PubMed]
W. Wan, Y. Chong, L. Ge, H. Noh, A. D. Stone, and H. Cao, “Time-reversed lasing and interferometric control of absorption,” Science331(6019), 889–892 (2011). [CrossRef] [PubMed]
Y. D. Chong and A. D. Stone, “Hidden black: coherent enhancement of absorption in strongly scattering media,” Phys. Rev. Lett.107(16), 163901 (2011). [CrossRef] [PubMed]
N. I. Landy, S. Sajuyigbe, J. J. Mock, D. R. Smith, and W. J. Padilla, “Perfect metamaterial absorber,” Phys. Rev. Lett.100(20), 207402 (2008). [CrossRef] [PubMed]
T. V. Teperik, F. J. García de Abajo, A. G. Borisov, M. Abdelsalam, P. N. Bartlett, Y. Sugawara, and J. J. Baumberg, “Omnidirectional absorption in nanostructured metal surfaces,” Nat. Photonics2(5), 299–301 (2008). [CrossRef]
M. Diem, T. Koschny, and C. M. Soukoulis, “Wide-angle perfect absorber/thermal emitter in the terahertz regime,” Phys. Rev. B79(3), 033101 (2009). [CrossRef]
M. Pu, C. Hu, M. Wang, C. Huang, Z. Zhao, C. Wang, Q. Feng, and X. Luo, “Design principles for infrared wide-angle perfect absorber based on plasmonic structure,” Opt. Express19(18), 17413–17420 (2011). [CrossRef] [PubMed]
B. E. A. Saleh and M. C. Teich, Fundamentals of Photonics, 2nd ed., (Wiley, 2007).
S. Nashima, O. Morikawa, K. Takata, and M. Hangyo, “Measurement of optical properties of highly doped silicon by terahertz time domain reflection spectroscopy,” Appl. Phys. Lett.79(24), 3923–3925 (2001). [CrossRef]
R. A. Falk, “Near IR Absorption in Heavily Doped Silicon-An Empirical Approach,” in Proceedings of the 26th ISTFA, 2000.
B. V. Zeghbroeck, Principles of Semiconductor Devices (Boulder, 1997).
W. Woltersdorff, “Über die optischen Konstanten dünner Metallschichten im langwelligen Ultrarot,” Z. Phys.91(3-4), 230–252 (1934). [CrossRef]
M. Dressel and G. Gruner, Electrodynamics of Solids: Optical Properties of Electrons in Matter (Cambridge, New York, 2002).
In the impedance theory, the thin film CPA can be approximated as a resistive sheet with Z=1/(dwσ0)=Z0/2 as the thickness of the slab is much smaller than the skin depth. Here, σ0=ωp2τε0 is the AC conductivity and Z0=μ0/ε0 is the impedance of vacuum. Then consider the radiation property of an infinite oscillating current sheet in xy plane. Assuming that the current is J→=Ksin(ωt)x→, the electric field at z = 0 can be written as: E→=−0.5μ0cKsin(ωt)x→. The effective sheet impedance, defined as E/J, is -Z0/2, which is just in opposite to the thin film CPA condition. Such a radiation can be thought as the time reversed process of the broadband CPA, although the infinite oscillating current sheet is not applicable in practical applications.
Q. L. Zhou, Y. L. Shi, T. Li, B. Jin, D. M. Zhao, and C. L. Zhang, “Carrier dynamics and terahertz photoconductivity of doped silicon measured by femtosecond pump-terahertz probe spectroscopy,” Sci. China, Ser. G52(12), 1944–1948 (2009). [CrossRef]
J. Kim, R. Jonathan, B. V. Sharma, J. G. Fujimoto, F. X. Kärtner, V. Scheuer, and G. Angelow, “Ultrabroadband beam splitter with matched group-delay dispersion,” Opt. Lett.30(12), 1569–1571 (2005). [CrossRef] [PubMed]
E. D. Palik, Handbook of Optical Constants of Solids (Academic, Orlando, Fla., 1985).
G. Nimtz and U. Panten, “Broad band electromagnetic wave absorbers designed with nano-metal films,” Ann. Phys.19(1-2), 53–59 (2010). [CrossRef]

Ann. Phys.

G. Nimtz and U. Panten, “Broad band electromagnetic wave absorbers designed with nano-metal films,” Ann. Phys.19(1-2), 53–59 (2010). [CrossRef]

Appl. Phys. Lett.

S. Nashima, O. Morikawa, K. Takata, and M. Hangyo, “Measurement of optical properties of highly doped silicon by terahertz time domain reflection spectroscopy,” Appl. Phys. Lett.79(24), 3923–3925 (2001). [CrossRef]

Nat. Photonics

T. V. Teperik, F. J. García de Abajo, A. G. Borisov, M. Abdelsalam, P. N. Bartlett, Y. Sugawara, and J. J. Baumberg, “Omnidirectional absorption in nanostructured metal surfaces,” Nat. Photonics2(5), 299–301 (2008). [CrossRef]

Opt. Express

M. Pu, C. Hu, M. Wang, C. Huang, Z. Zhao, C. Wang, Q. Feng, and X. Luo, “Design principles for infrared wide-angle perfect absorber based on plasmonic structure,” Opt. Express19(18), 17413–17420 (2011). [CrossRef] [PubMed]

Opt. Lett.

J. Kim, R. Jonathan, B. V. Sharma, J. G. Fujimoto, F. X. Kärtner, V. Scheuer, and G. Angelow, “Ultrabroadband beam splitter with matched group-delay dispersion,” Opt. Lett.30(12), 1569–1571 (2005). [CrossRef] [PubMed]

Phys. Rev. B

M. Diem, T. Koschny, and C. M. Soukoulis, “Wide-angle perfect absorber/thermal emitter in the terahertz regime,” Phys. Rev. B79(3), 033101 (2009). [CrossRef]

Phys. Rev. Lett.

Y. D. Chong, L. Ge, H. Cao, and A. D. Stone, “Coherent perfect absorbers: time-reversed lasers,” Phys. Rev. Lett.105(5), 053901 (2010). [CrossRef] [PubMed]
Y. D. Chong and A. D. Stone, “Hidden black: coherent enhancement of absorption in strongly scattering media,” Phys. Rev. Lett.107(16), 163901 (2011). [CrossRef] [PubMed]
N. I. Landy, S. Sajuyigbe, J. J. Mock, D. R. Smith, and W. J. Padilla, “Perfect metamaterial absorber,” Phys. Rev. Lett.100(20), 207402 (2008). [CrossRef] [PubMed]

Sci. China, Ser. G

Q. L. Zhou, Y. L. Shi, T. Li, B. Jin, D. M. Zhao, and C. L. Zhang, “Carrier dynamics and terahertz photoconductivity of doped silicon measured by femtosecond pump-terahertz probe spectroscopy,” Sci. China, Ser. G52(12), 1944–1948 (2009). [CrossRef]

Science

W. Wan, Y. Chong, L. Ge, H. Noh, A. D. Stone, and H. Cao, “Time-reversed lasing and interferometric control of absorption,” Science331(6019), 889–892 (2011). [CrossRef] [PubMed]

Z. Phys.

W. Woltersdorff, “Über die optischen Konstanten dünner Metallschichten im langwelligen Ultrarot,” Z. Phys.91(3-4), 230–252 (1934). [CrossRef]

Other

M. Dressel and G. Gruner, Electrodynamics of Solids: Optical Properties of Electrons in Matter (Cambridge, New York, 2002).
In the impedance theory, the thin film CPA can be approximated as a resistive sheet with Z=1/(dwσ0)=Z0/2 as the thickness of the slab is much smaller than the skin depth. Here, σ0=ωp2τε0 is the AC conductivity and Z0=μ0/ε0 is the impedance of vacuum. Then consider the radiation property of an infinite oscillating current sheet in xy plane. Assuming that the current is J→=Ksin(ωt)x→, the electric field at z = 0 can be written as: E→=−0.5μ0cKsin(ωt)x→. The effective sheet impedance, defined as E/J, is -Z0/2, which is just in opposite to the thin film CPA condition. Such a radiation can be thought as the time reversed process of the broadband CPA, although the infinite oscillating current sheet is not applicable in practical applications.
R. A. Falk, “Near IR Absorption in Heavily Doped Silicon-An Empirical Approach,” in Proceedings of the 26th ISTFA, 2000.
B. V. Zeghbroeck, Principles of Semiconductor Devices (Boulder, 1997).
E. D. Palik, Handbook of Optical Constants of Solids (Academic, Orlando, Fla., 1985).
B. E. A. Saleh and M. C. Teich, Fundamentals of Photonics, 2nd ed., (Wiley, 2007).

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