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23 GHz Ge/SiGe multiple quantum well electro-absorption modulatorPapichaya Chaisakul, Delphine Marris-Morini, Mohamed-Saïd Rouifed, Giovanni Isella, Daniel Chrastina, Jacopo Frigerio, Xavier Le Roux, Samson Edmond, Jean-René Coudevylle, and Laurent Vivien »View Author Affiliations
Papichaya Chaisakul,1,*
Delphine Marris-Morini,1,3
Mohamed-Saïd Rouifed,1
Giovanni Isella,2
Daniel Chrastina,2
Jacopo Frigerio,2
Xavier Le Roux,1
Samson Edmond,1
Jean-René Coudevylle,1
and Laurent Vivien1
1Institut d'Electronique Fondamentale, Univ. Paris-Sud, CNRS UMR 8622, Bât. 220, 91405 Orsay Cedex, France 2L-NESS, Dipartimento di Fisica del Politecnico di Milano, Polo di Como, Via Anzani 42, I 22100 Como, Italy 3delphine.morini@u-psud.fr *Corresponding author: papichaya.chaisakul@u-psud.fr |
Optics Express, Vol. 20, Issue 3, pp. 3219-3224 (2012)
http://dx.doi.org/10.1364/OE.20.003219
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Abstract
We report on high speed operation of a Ge/SiGe multiple quantum well (MQW) electro-absorption modulator in a waveguide configuration. 23 GHz bandwidth is experimentally demonstrated from a 3 µm wide and 90 µm long Ge/SiGe MQW waveguide. The modulator exhibits a high extinction ratio of more than 10 dB over a wide spectral range. Moreover with a swing voltage of 1 V between 3 and 4 V, an extinction ratio as high as 9 dB can be obtained with a corresponding estimated energy consumption of 108 fJ per bit. This demonstrates the potentiality of Ge/SiGe MQWs as a building block of silicon compatible photonic integrated circuits for short distance energy efficient optical interconnections.
© 2012 OSA
OCIS Codes
(130.0250) Integrated optics : Optoelectronics
(160.2100) Materials : Electro-optical materials
(200.4650) Optics in computing : Optical interconnects
(230.2090) Optical devices : Electro-optical devices
(230.4205) Optical devices : Multiple quantum well (MQW) modulators
(130.4110) Integrated optics : Modulators
ToC Category:
Optoelectronics
History
Original Manuscript: December 15, 2011
Revised Manuscript: January 17, 2012
Manuscript Accepted: January 17, 2012
Published: January 26, 2012
Citation
Papichaya Chaisakul, Delphine Marris-Morini, Mohamed-Saïd Rouifed, Giovanni Isella, Daniel Chrastina, Jacopo Frigerio, Xavier Le Roux, Samson Edmond, Jean-René Coudevylle, and Laurent Vivien, "23 GHz Ge/SiGe multiple quantum well electro-absorption modulator," Opt. Express 20, 3219-3224 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-3-3219
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Asghari, M.
Assefa, S.
Beals, M.
Bedell, S. W.
Bernardis, S.
Bowers, J. E.
Camacho-Aguilera, R.
Cannon, D. D.
Cassan, E.
Chaisakul, P.
Chatterjee, S.
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Cheng, J.
Chrastina, D.
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Coudevylle, J.-R.
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- J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators,” Nat. Photonics2(7), 433–437 (2008). [CrossRef]
- N. S. Köster, K. Kolata, R. Woscholski, C. Lange, G. Isella, D. Chrastina, H. von Känel, and S. Chatterjee, “Giant dynamical Stark shift in germanium quantum wells,” Appl. Phys. Lett.98(16), 161103 (2011). [CrossRef]
- P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, N. Izard, X. Le Roux, S. Edmond, J.-R. Coudevylle, and L. Vivien, “Room temperature direct gap electroluminescence from Ge/Si0.15Ge0.85 multiple quantum well waveguide,” Appl. Phys. Lett.99(14), 141106 (2011). [CrossRef]
- P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, M.-S. Rouifed, X. Le Roux, S. Edmond, E. Cassan, J.-R. Coudevylle, and L. Vivien, “10-Gb/s Ge/SiGe multiple quantum-well waveguide photodetector,” IEEE Photon. Technol. Lett.23(20), 1430–1432 (2011). [CrossRef]
- P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, X. Le Roux, S. Edmond, J.-R. Coudevylle, E. Cassan, and L. Vivien, “Polarization dependence of quantum-confined Stark effect in Ge/SiGe quantum well planar waveguides,” Opt. Lett.36(10), 1794–1796 (2011). [CrossRef] [PubMed]
- P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, X. Le Roux, E. Gatti, S. Edmond, J. Osmond, E. Cassan, and L. Vivien, “Quantum-confined Stark effect measurements in Ge/SiGe quantum-well structures,” Opt. Lett.35(17), 2913–2915 (2010). [CrossRef] [PubMed]
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- S. Ren, Y. Rong, S. A. Claussen, R. K. Schaevitz, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides,” IEEE Photon. Technol. Lett.submitted.
- P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, X. Le Roux, S. Edmond, J.-R. Coudevylle, E. Cassan, and L. Vivien, “Polarization dependence of quantum-confined Stark effect in Ge/SiGe quantum well planar waveguides,” Opt. Lett.36(10), 1794–1796 (2011). [CrossRef] [PubMed]
- P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, M.-S. Rouifed, X. Le Roux, S. Edmond, E. Cassan, J.-R. Coudevylle, and L. Vivien, “10-Gb/s Ge/SiGe multiple quantum-well waveguide photodetector,” IEEE Photon. Technol. Lett.23(20), 1430–1432 (2011). [CrossRef]
- P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, N. Izard, X. Le Roux, S. Edmond, J.-R. Coudevylle, and L. Vivien, “Room temperature direct gap electroluminescence from Ge/Si0.15Ge0.85 multiple quantum well waveguide,” Appl. Phys. Lett.99(14), 141106 (2011). [CrossRef]
- D. Marris-Morini, L. Vivien, G. Rasigade, J. M. Fédéli, E. Cassan, X. Le Roux, P. Crozat, S. Maine, A. Lupu, M. Halbwax, and S. Laval, “Recent progress in high speed silicon-based optical modulators,” Proc. IEEE97(7), 1199–1215 (2009). [CrossRef]
- N.-N. Feng, D. Feng, S. Liao, X. Wang, P. Dong, H. Liang, C.-C. Kung, W. Qian, J. Fong, R. Shafiiha, Y. Luo, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “30GHz Ge electro-absorption modulator integrated with 3 μm silicon-on-insulator waveguide,” Opt. Express19(8), 7062–7067 (2011). [CrossRef] [PubMed]
- S. Jongthammanurak, J. F. Liu, K. Wada, D. D. Cannon, D. T. Danielson, D. Pan, L. C. Kimerling, and J. Michel, “Large electro-optic effect in tensile strained Ge-on-Si films,” Appl. Phys. Lett.89(16), 161115 (2006). [CrossRef]
- N.-N. Feng, D. Feng, S. Liao, X. Wang, P. Dong, H. Liang, C.-C. Kung, W. Qian, J. Fong, R. Shafiiha, Y. Luo, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “30GHz Ge electro-absorption modulator integrated with 3 μm silicon-on-insulator waveguide,” Opt. Express19(8), 7062–7067 (2011). [CrossRef] [PubMed]
- P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, M.-S. Rouifed, X. Le Roux, S. Edmond, E. Cassan, J.-R. Coudevylle, and L. Vivien, “10-Gb/s Ge/SiGe multiple quantum-well waveguide photodetector,” IEEE Photon. Technol. Lett.23(20), 1430–1432 (2011). [CrossRef]
- P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, N. Izard, X. Le Roux, S. Edmond, J.-R. Coudevylle, and L. Vivien, “Room temperature direct gap electroluminescence from Ge/Si0.15Ge0.85 multiple quantum well waveguide,” Appl. Phys. Lett.99(14), 141106 (2011). [CrossRef]
- P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, X. Le Roux, S. Edmond, J.-R. Coudevylle, E. Cassan, and L. Vivien, “Polarization dependence of quantum-confined Stark effect in Ge/SiGe quantum well planar waveguides,” Opt. Lett.36(10), 1794–1796 (2011). [CrossRef] [PubMed]
- P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, X. Le Roux, E. Gatti, S. Edmond, J. Osmond, E. Cassan, and L. Vivien, “Quantum-confined Stark effect measurements in Ge/SiGe quantum-well structures,” Opt. Lett.35(17), 2913–2915 (2010). [CrossRef] [PubMed]
- J. E. Roth, O. Fidaner, E. H. Edwards, R. K. Schaevitz, Y.-H. Kuo, N. C. Helman, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “C-band side-entry Ge quantum well electroabsorption modulator on SOI operating at 1 volt swing,” Electron. Lett.44(1), 49–50 (2008). [CrossRef]
- R. K. Schaevitz, E. H. Edwards, J. E. Roth, E. T. Fei, Y. Rong, P. Wahl, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “Simple electroabsorption calculator for designing 1310nm and 1550nm modulators using germanium quantum wells,” IEEE J. Quantum Electron.submitted.
- D. Marris-Morini, L. Vivien, G. Rasigade, J. M. Fédéli, E. Cassan, X. Le Roux, P. Crozat, S. Maine, A. Lupu, M. Halbwax, and S. Laval, “Recent progress in high speed silicon-based optical modulators,” Proc. IEEE97(7), 1199–1215 (2009). [CrossRef]
- R. K. Schaevitz, E. H. Edwards, J. E. Roth, E. T. Fei, Y. Rong, P. Wahl, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “Simple electroabsorption calculator for designing 1310nm and 1550nm modulators using germanium quantum wells,” IEEE J. Quantum Electron.submitted.
- N.-N. Feng, D. Feng, S. Liao, X. Wang, P. Dong, H. Liang, C.-C. Kung, W. Qian, J. Fong, R. Shafiiha, Y. Luo, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “30GHz Ge electro-absorption modulator integrated with 3 μm silicon-on-insulator waveguide,” Opt. Express19(8), 7062–7067 (2011). [CrossRef] [PubMed]
- N.-N. Feng, D. Feng, S. Liao, X. Wang, P. Dong, H. Liang, C.-C. Kung, W. Qian, J. Fong, R. Shafiiha, Y. Luo, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “30GHz Ge electro-absorption modulator integrated with 3 μm silicon-on-insulator waveguide,” Opt. Express19(8), 7062–7067 (2011). [CrossRef] [PubMed]
- J. E. Roth, O. Fidaner, E. H. Edwards, R. K. Schaevitz, Y.-H. Kuo, N. C. Helman, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “C-band side-entry Ge quantum well electroabsorption modulator on SOI operating at 1 volt swing,” Electron. Lett.44(1), 49–50 (2008). [CrossRef]
- Y. Rong, Y. Ge, Y. Huo, M. Fiorentino, M. R. T. Tan, T. I. Kamins, T. J. Ochalski, G. Huyet, and J. S. Harris, “Quantum-confined Stark effect in Ge/SiGe qunatum wells on Si,” IEEE J. Sel. Top. Quantum Electron.16(1), 85–92 (2010). [CrossRef]
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- Y. Rong, Y. Ge, Y. Huo, M. Fiorentino, M. R. T. Tan, T. I. Kamins, T. J. Ochalski, G. Huyet, and J. S. Harris, “Quantum-confined Stark effect in Ge/SiGe qunatum wells on Si,” IEEE J. Sel. Top. Quantum Electron.16(1), 85–92 (2010). [CrossRef]
- L. Lever, Y. Hu, M. Myronov, X. Liu, N. Owens, F. Y. Gardes, I. P. Marko, S. J. Sweeney, Z. Ikonić, D. R. Leadley, G. T. Reed, and R. W. Kelsall, “Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon,” Opt. Lett.36(21), 4158–4160 (2011). [CrossRef] [PubMed]
- S. Jongthammanurak, J. F. Liu, K. Wada, D. D. Cannon, D. T. Danielson, D. Pan, L. C. Kimerling, and J. Michel, “Large electro-optic effect in tensile strained Ge-on-Si films,” Appl. Phys. Lett.89(16), 161115 (2006). [CrossRef]
- J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators,” Nat. Photonics2(7), 433–437 (2008). [CrossRef]
- N.-N. Feng, D. Feng, S. Liao, X. Wang, P. Dong, H. Liang, C.-C. Kung, W. Qian, J. Fong, R. Shafiiha, Y. Luo, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “30GHz Ge electro-absorption modulator integrated with 3 μm silicon-on-insulator waveguide,” Opt. Express19(8), 7062–7067 (2011). [CrossRef] [PubMed]
- D. Marris-Morini, L. Vivien, G. Rasigade, J. M. Fédéli, E. Cassan, X. Le Roux, P. Crozat, S. Maine, A. Lupu, M. Halbwax, and S. Laval, “Recent progress in high speed silicon-based optical modulators,” Proc. IEEE97(7), 1199–1215 (2009). [CrossRef]
- L. Lever, Y. Hu, M. Myronov, X. Liu, N. Owens, F. Y. Gardes, I. P. Marko, S. J. Sweeney, Z. Ikonić, D. R. Leadley, G. T. Reed, and R. W. Kelsall, “Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon,” Opt. Lett.36(21), 4158–4160 (2011). [CrossRef] [PubMed]
- Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature437(7063), 1334–1336 (2005). [CrossRef] [PubMed]
- S. Ren, Y. Rong, S. A. Claussen, R. K. Schaevitz, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides,” IEEE Photon. Technol. Lett.submitted.
- Y. Rong, Y. Ge, Y. Huo, M. Fiorentino, M. R. T. Tan, T. I. Kamins, T. J. Ochalski, G. Huyet, and J. S. Harris, “Quantum-confined Stark effect in Ge/SiGe qunatum wells on Si,” IEEE J. Sel. Top. Quantum Electron.16(1), 85–92 (2010). [CrossRef]
- S. Ren, Y. Rong, S. A. Claussen, R. K. Schaevitz, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides,” IEEE Photon. Technol. Lett.submitted.
- R. K. Schaevitz, E. H. Edwards, J. E. Roth, E. T. Fei, Y. Rong, P. Wahl, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “Simple electroabsorption calculator for designing 1310nm and 1550nm modulators using germanium quantum wells,” IEEE J. Quantum Electron.submitted.
- G. Isella, D. Chrastina, B. Rössner, T. Hackbarth, H.-J. Herzog, U. König, and H. von Känel, “Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices,” Solid-State Electron.48(8), 1317–1323 (2004). [CrossRef]
- J. E. Roth, O. Fidaner, E. H. Edwards, R. K. Schaevitz, Y.-H. Kuo, N. C. Helman, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “C-band side-entry Ge quantum well electroabsorption modulator on SOI operating at 1 volt swing,” Electron. Lett.44(1), 49–50 (2008). [CrossRef]
- Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature437(7063), 1334–1336 (2005). [CrossRef] [PubMed]
- R. K. Schaevitz, E. H. Edwards, J. E. Roth, E. T. Fei, Y. Rong, P. Wahl, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “Simple electroabsorption calculator for designing 1310nm and 1550nm modulators using germanium quantum wells,” IEEE J. Quantum Electron.submitted.
- P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, M.-S. Rouifed, X. Le Roux, S. Edmond, E. Cassan, J.-R. Coudevylle, and L. Vivien, “10-Gb/s Ge/SiGe multiple quantum-well waveguide photodetector,” IEEE Photon. Technol. Lett.23(20), 1430–1432 (2011). [CrossRef]
- J. E. Roth, O. Fidaner, E. H. Edwards, R. K. Schaevitz, Y.-H. Kuo, N. C. Helman, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “C-band side-entry Ge quantum well electroabsorption modulator on SOI operating at 1 volt swing,” Electron. Lett.44(1), 49–50 (2008). [CrossRef]
- R. K. Schaevitz, E. H. Edwards, J. E. Roth, E. T. Fei, Y. Rong, P. Wahl, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “Simple electroabsorption calculator for designing 1310nm and 1550nm modulators using germanium quantum wells,” IEEE J. Quantum Electron.submitted.
- S. Ren, Y. Rong, S. A. Claussen, R. K. Schaevitz, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides,” IEEE Photon. Technol. Lett.submitted.
- N.-N. Feng, D. Feng, S. Liao, X. Wang, P. Dong, H. Liang, C.-C. Kung, W. Qian, J. Fong, R. Shafiiha, Y. Luo, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “30GHz Ge electro-absorption modulator integrated with 3 μm silicon-on-insulator waveguide,” Opt. Express19(8), 7062–7067 (2011). [CrossRef] [PubMed]
- J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators,” Nat. Photonics2(7), 433–437 (2008). [CrossRef]
- L. Lever, Y. Hu, M. Myronov, X. Liu, N. Owens, F. Y. Gardes, I. P. Marko, S. J. Sweeney, Z. Ikonić, D. R. Leadley, G. T. Reed, and R. W. Kelsall, “Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon,” Opt. Lett.36(21), 4158–4160 (2011). [CrossRef] [PubMed]
- Y. Rong, Y. Ge, Y. Huo, M. Fiorentino, M. R. T. Tan, T. I. Kamins, T. J. Ochalski, G. Huyet, and J. S. Harris, “Quantum-confined Stark effect in Ge/SiGe qunatum wells on Si,” IEEE J. Sel. Top. Quantum Electron.16(1), 85–92 (2010). [CrossRef]
- P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, M.-S. Rouifed, X. Le Roux, S. Edmond, E. Cassan, J.-R. Coudevylle, and L. Vivien, “10-Gb/s Ge/SiGe multiple quantum-well waveguide photodetector,” IEEE Photon. Technol. Lett.23(20), 1430–1432 (2011). [CrossRef]
- P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, N. Izard, X. Le Roux, S. Edmond, J.-R. Coudevylle, and L. Vivien, “Room temperature direct gap electroluminescence from Ge/Si0.15Ge0.85 multiple quantum well waveguide,” Appl. Phys. Lett.99(14), 141106 (2011). [CrossRef]
- P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, X. Le Roux, S. Edmond, J.-R. Coudevylle, E. Cassan, and L. Vivien, “Polarization dependence of quantum-confined Stark effect in Ge/SiGe quantum well planar waveguides,” Opt. Lett.36(10), 1794–1796 (2011). [CrossRef] [PubMed]
- P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, X. Le Roux, E. Gatti, S. Edmond, J. Osmond, E. Cassan, and L. Vivien, “Quantum-confined Stark effect measurements in Ge/SiGe quantum-well structures,” Opt. Lett.35(17), 2913–2915 (2010). [CrossRef] [PubMed]
- D. Marris-Morini, L. Vivien, G. Rasigade, J. M. Fédéli, E. Cassan, X. Le Roux, P. Crozat, S. Maine, A. Lupu, M. Halbwax, and S. Laval, “Recent progress in high speed silicon-based optical modulators,” Proc. IEEE97(7), 1199–1215 (2009). [CrossRef]
- N. S. Köster, K. Kolata, R. Woscholski, C. Lange, G. Isella, D. Chrastina, H. von Känel, and S. Chatterjee, “Giant dynamical Stark shift in germanium quantum wells,” Appl. Phys. Lett.98(16), 161103 (2011). [CrossRef]
- G. Isella, D. Chrastina, B. Rössner, T. Hackbarth, H.-J. Herzog, U. König, and H. von Känel, “Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices,” Solid-State Electron.48(8), 1317–1323 (2004). [CrossRef]
- S. Jongthammanurak, J. F. Liu, K. Wada, D. D. Cannon, D. T. Danielson, D. Pan, L. C. Kimerling, and J. Michel, “Large electro-optic effect in tensile strained Ge-on-Si films,” Appl. Phys. Lett.89(16), 161115 (2006). [CrossRef]
- R. K. Schaevitz, E. H. Edwards, J. E. Roth, E. T. Fei, Y. Rong, P. Wahl, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “Simple electroabsorption calculator for designing 1310nm and 1550nm modulators using germanium quantum wells,” IEEE J. Quantum Electron.submitted.
- N.-N. Feng, D. Feng, S. Liao, X. Wang, P. Dong, H. Liang, C.-C. Kung, W. Qian, J. Fong, R. Shafiiha, Y. Luo, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “30GHz Ge electro-absorption modulator integrated with 3 μm silicon-on-insulator waveguide,” Opt. Express19(8), 7062–7067 (2011). [CrossRef] [PubMed]
- N. S. Köster, K. Kolata, R. Woscholski, C. Lange, G. Isella, D. Chrastina, H. von Känel, and S. Chatterjee, “Giant dynamical Stark shift in germanium quantum wells,” Appl. Phys. Lett.98(16), 161103 (2011). [CrossRef]
Appl. Phys. Lett.
- S. Jongthammanurak, J. F. Liu, K. Wada, D. D. Cannon, D. T. Danielson, D. Pan, L. C. Kimerling, and J. Michel, “Large electro-optic effect in tensile strained Ge-on-Si films,” Appl. Phys. Lett.89(16), 161115 (2006). [CrossRef]
- N. S. Köster, K. Kolata, R. Woscholski, C. Lange, G. Isella, D. Chrastina, H. von Känel, and S. Chatterjee, “Giant dynamical Stark shift in germanium quantum wells,” Appl. Phys. Lett.98(16), 161103 (2011). [CrossRef]
- P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, N. Izard, X. Le Roux, S. Edmond, J.-R. Coudevylle, and L. Vivien, “Room temperature direct gap electroluminescence from Ge/Si0.15Ge0.85 multiple quantum well waveguide,” Appl. Phys. Lett.99(14), 141106 (2011). [CrossRef]
Electron. Lett.
- J. E. Roth, O. Fidaner, E. H. Edwards, R. K. Schaevitz, Y.-H. Kuo, N. C. Helman, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “C-band side-entry Ge quantum well electroabsorption modulator on SOI operating at 1 volt swing,” Electron. Lett.44(1), 49–50 (2008). [CrossRef]
IEEE J. Quantum Electron.
- R. K. Schaevitz, E. H. Edwards, J. E. Roth, E. T. Fei, Y. Rong, P. Wahl, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “Simple electroabsorption calculator for designing 1310nm and 1550nm modulators using germanium quantum wells,” IEEE J. Quantum Electron.submitted.
IEEE J. Sel. Top. Quantum Electron.
- Y. Rong, Y. Ge, Y. Huo, M. Fiorentino, M. R. T. Tan, T. I. Kamins, T. J. Ochalski, G. Huyet, and J. S. Harris, “Quantum-confined Stark effect in Ge/SiGe qunatum wells on Si,” IEEE J. Sel. Top. Quantum Electron.16(1), 85–92 (2010). [CrossRef]
IEEE Photon. Technol. Lett.
- S. Ren, Y. Rong, S. A. Claussen, R. K. Schaevitz, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides,” IEEE Photon. Technol. Lett.submitted.
- P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, M.-S. Rouifed, X. Le Roux, S. Edmond, E. Cassan, J.-R. Coudevylle, and L. Vivien, “10-Gb/s Ge/SiGe multiple quantum-well waveguide photodetector,” IEEE Photon. Technol. Lett.23(20), 1430–1432 (2011). [CrossRef]
Nat. Photonics
- J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators,” Nat. Photonics2(7), 433–437 (2008). [CrossRef]
- R. Kirchain and L. Kimerling, “A roadmap for nanophotonics,” Nat. Photonics1(6), 303–305 (2007). [CrossRef]
- D. Liang and J. E. Bowers, “Recent progress in lasers on silicon,” Nat. Photonics4(8), 511–517 (2010). [CrossRef]
Nature
- Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature437(7063), 1334–1336 (2005). [CrossRef] [PubMed]
Opt. Express
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Opt. Lett.
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- L. Lever, Y. Hu, M. Myronov, X. Liu, N. Owens, F. Y. Gardes, I. P. Marko, S. J. Sweeney, Z. Ikonić, D. R. Leadley, G. T. Reed, and R. W. Kelsall, “Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon,” Opt. Lett.36(21), 4158–4160 (2011). [CrossRef] [PubMed]
- P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, X. Le Roux, S. Edmond, J.-R. Coudevylle, E. Cassan, and L. Vivien, “Polarization dependence of quantum-confined Stark effect in Ge/SiGe quantum well planar waveguides,” Opt. Lett.36(10), 1794–1796 (2011). [CrossRef] [PubMed]
Proc. IEEE
- D. A. B. Miller, “Device requirements for optical interconnects to silicon chips,” Proc. IEEE97(7), 1166–1185 (2009). [CrossRef]
- D. Marris-Morini, L. Vivien, G. Rasigade, J. M. Fédéli, E. Cassan, X. Le Roux, P. Crozat, S. Maine, A. Lupu, M. Halbwax, and S. Laval, “Recent progress in high speed silicon-based optical modulators,” Proc. IEEE97(7), 1199–1215 (2009). [CrossRef]
Solid-State Electron.
- G. Isella, D. Chrastina, B. Rössner, T. Hackbarth, H.-J. Herzog, U. König, and H. von Känel, “Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices,” Solid-State Electron.48(8), 1317–1323 (2004). [CrossRef]
Other
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2011, Chaisakul, IEEE Photon. Technol. Lett.
- P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, M.-S. Rouifed, X. Le Roux, S. Edmond, E. Cassan, J.-R. Coudevylle, and L. Vivien, “10-Gb/s Ge/SiGe multiple quantum-well waveguide photodetector,” IEEE Photon. Technol. Lett.23(20), 1430–1432 (2011). [CrossRef]
- P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, N. Izard, X. Le Roux, S. Edmond, J.-R. Coudevylle, and L. Vivien, “Room temperature direct gap electroluminescence from Ge/Si0.15Ge0.85 multiple quantum well waveguide,” Appl. Phys. Lett.99(14), 141106 (2011). [CrossRef]
- N. S. Köster, K. Kolata, R. Woscholski, C. Lange, G. Isella, D. Chrastina, H. von Känel, and S. Chatterjee, “Giant dynamical Stark shift in germanium quantum wells,” Appl. Phys. Lett.98(16), 161103 (2011). [CrossRef]
- N.-N. Feng, D. Feng, S. Liao, X. Wang, P. Dong, H. Liang, C.-C. Kung, W. Qian, J. Fong, R. Shafiiha, Y. Luo, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “30GHz Ge electro-absorption modulator integrated with 3 μm silicon-on-insulator waveguide,” Opt. Express19(8), 7062–7067 (2011). [CrossRef] [PubMed]
- L. Lever, Y. Hu, M. Myronov, X. Liu, N. Owens, F. Y. Gardes, I. P. Marko, S. J. Sweeney, Z. Ikonić, D. R. Leadley, G. T. Reed, and R. W. Kelsall, “Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon,” Opt. Lett.36(21), 4158–4160 (2011). [CrossRef] [PubMed]
- Y. Rong, Y. Ge, Y. Huo, M. Fiorentino, M. R. T. Tan, T. I. Kamins, T. J. Ochalski, G. Huyet, and J. S. Harris, “Quantum-confined Stark effect in Ge/SiGe qunatum wells on Si,” IEEE J. Sel. Top. Quantum Electron.16(1), 85–92 (2010). [CrossRef]
- D. Liang and J. E. Bowers, “Recent progress in lasers on silicon,” Nat. Photonics4(8), 511–517 (2010). [CrossRef]
- D. A. B. Miller, “Device requirements for optical interconnects to silicon chips,” Proc. IEEE97(7), 1166–1185 (2009). [CrossRef]
- D. Marris-Morini, L. Vivien, G. Rasigade, J. M. Fédéli, E. Cassan, X. Le Roux, P. Crozat, S. Maine, A. Lupu, M. Halbwax, and S. Laval, “Recent progress in high speed silicon-based optical modulators,” Proc. IEEE97(7), 1199–1215 (2009). [CrossRef]
- J. E. Roth, O. Fidaner, E. H. Edwards, R. K. Schaevitz, Y.-H. Kuo, N. C. Helman, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “C-band side-entry Ge quantum well electroabsorption modulator on SOI operating at 1 volt swing,” Electron. Lett.44(1), 49–50 (2008). [CrossRef]
- J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators,” Nat. Photonics2(7), 433–437 (2008). [CrossRef]
- R. Kirchain and L. Kimerling, “A roadmap for nanophotonics,” Nat. Photonics1(6), 303–305 (2007). [CrossRef]
- S. Jongthammanurak, J. F. Liu, K. Wada, D. D. Cannon, D. T. Danielson, D. Pan, L. C. Kimerling, and J. Michel, “Large electro-optic effect in tensile strained Ge-on-Si films,” Appl. Phys. Lett.89(16), 161115 (2006). [CrossRef]
- Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature437(7063), 1334–1336 (2005). [CrossRef] [PubMed]
- G. Isella, D. Chrastina, B. Rössner, T. Hackbarth, H.-J. Herzog, U. König, and H. von Känel, “Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices,” Solid-State Electron.48(8), 1317–1323 (2004). [CrossRef]
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