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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 4 — Feb. 13, 2012
  • pp: 3932–3940

Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells

Huining Wang, Ziwu Ji, Shuang Qu, Gang Wang, Yongzhi Jiang, Baoli Liu, Xiangang Xu, and Hirofumi Mino  »View Author Affiliations


Optics Express, Vol. 20, Issue 4, pp. 3932-3940 (2012)
http://dx.doi.org/10.1364/OE.20.003932


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Abstract

Excitation power and temperature dependences of the photoluminescence (PL) spectra are studied in InGaN/GaN multiple quantum wells (MQWs). The excitation power dependences of the PL peak energy and linewidth indicate that the emission process of the MQWs is dominated first by the Coulomb screening effect and then by the localized states filling at low temperature, and that the nonradiative centers are thermally activated in low excitation range at room temperature. The anomalous temperature dependences of the peak energy and linewidth are well explained by the localized carrier hopping and thermalization process, and by the exponentially increased density of states with energy in the band tail. Moreover, it is also found that internal quantum efficiency is related to the mechanism conversion from nonradiative to radiative mechanism, and up to the carriers escaping from localized states.

© 2012 OSA

OCIS Codes
(160.4760) Materials : Optical properties
(160.6000) Materials : Semiconductor materials

ToC Category:
Materials

History
Original Manuscript: December 12, 2011
Revised Manuscript: January 11, 2012
Manuscript Accepted: January 27, 2012
Published: February 1, 2012

Citation
Huining Wang, Ziwu Ji, Shuang Qu, Gang Wang, Yongzhi Jiang, Baoli Liu, Xiangang Xu, and Hirofumi Mino, "Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells," Opt. Express 20, 3932-3940 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-4-3932


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