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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 4 — Feb. 13, 2012
  • pp: 4206–4212

High power density vertical-cavity surface-emitting lasers with ion implanted isolated current aperture

Akira Higuchi, Hideyuki Naito, Kousuke Torii, Masahiro Miyamoto, Junya Maeda, Hirofumi Miyajima, and Harumasa Yoshida  »View Author Affiliations


Optics Express, Vol. 20, Issue 4, pp. 4206-4212 (2012)
http://dx.doi.org/10.1364/OE.20.004206


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Abstract

We report on GaAs-based high power density vertical-cavity surface-emitting laser diodes (VCSELs) with ion implanted isolated current apertures. A continuous-wave output power of over 380 mW and the power density of 4.9 kW/cm2 have been achieved at 15 °C from the 100-μm-diameter aperture, which is the highest output characteristic ever reported for an ion implanted VCSEL. A high background suppression ratio of over 40 dB has also been obtained at the emission wavelength of 970 nm. The ion implantation technique provides an excellent current isolation in the apertures and would be a key to realize high power output from a VCSEL array.

© 2012 OSA

OCIS Codes
(140.5960) Lasers and laser optics : Semiconductor lasers
(140.7260) Lasers and laser optics : Vertical cavity surface emitting lasers
(140.7270) Lasers and laser optics : Vertical emitting lasers

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: December 1, 2011
Revised Manuscript: January 20, 2012
Manuscript Accepted: January 20, 2012
Published: February 6, 2012

Citation
Akira Higuchi, Hideyuki Naito, Kousuke Torii, Masahiro Miyamoto, Junya Maeda, Hirofumi Miyajima, and Harumasa Yoshida, "High power density vertical-cavity surface-emitting lasers with ion implanted isolated current aperture," Opt. Express 20, 4206-4212 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-4-4206


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