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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 4 — Feb. 13, 2012
  • pp: 4419–4427

Spectroscopic ellipsometry as an optical probe of strain evolution in ferroelectric thin films

D. Y. Lei, S. Kéna-Cohen, B. Zou, P. K. Petrov, Y. Sonnefraud, J. Breeze, S. A. Maier, and N. M. Alford  »View Author Affiliations

Optics Express, Vol. 20, Issue 4, pp. 4419-4427 (2012)

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Heteroepitaxial strain in ferroelectric thin films is known to have a significant impact on both their low and high frequency dielectric properties. In this paper, we use ex-situ spectroscopic ellipsometry to study the strain evolution with film thickness, and strain relaxation in ferroelectric Ba0.5Sr0.5TiO3 epitaxial films grown on single crystal substrates. For films grown on MgO substrates, a critical thickness for strain relaxation is observed. In addition, studies of Ba0.5Sr0.5TiO3 films grown on different single crystal substrates reveal that the strain relaxation rate can be inferred from changes in the optical properties. Using this information, we show that the optical constants of Ba0.5Sr0.5TiO3 can be readily tuned via strain engineering.

© 2012 OSA

OCIS Codes
(120.2130) Instrumentation, measurement, and metrology : Ellipsometry and polarimetry
(160.2260) Materials : Ferroelectrics
(310.6860) Thin films : Thin films, optical properties

ToC Category:
Instrumentation, Measurement, and Metrology

Original Manuscript: November 23, 2011
Revised Manuscript: December 16, 2011
Manuscript Accepted: December 18, 2011
Published: February 8, 2012

D. Y. Lei, S. Kéna-Cohen, B. Zou, P. K. Petrov, Y. Sonnefraud, J. Breeze, S. A. Maier, and N. M. Alford, "Spectroscopic ellipsometry as an optical probe of strain evolution in ferroelectric thin films," Opt. Express 20, 4419-4427 (2012)

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