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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 5 — Feb. 27, 2012
  • pp: 5501–5507

Eu3+ reduction and efficient light emission in Eu2O3 films deposited on Si substrates

Gabriele Bellocchi, Giorgia Franzò, Fabio Iacona, Simona Boninelli, Maria Miritello, Tiziana Cesca, and Francesco Priolo  »View Author Affiliations

Optics Express, Vol. 20, Issue 5, pp. 5501-5507 (2012)

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A stable Eu3+→Eu2+ reduction is accomplished by thermal annealing in N2 ambient of Eu2O3 films deposited by magnetron sputtering on Si substrates. Transmission electron microscopy and x-ray diffraction measurements demonstrate the occurrence of a complex reactivity at the Eu2O3/Si interface, leading to the formation of Eu2+ silicates, characterized by a very strong (the measured external quantum efficiency is about 10%) and broad room temperature photoluminescence (PL) peak centered at 590 nm. This signal is much more efficient than the Eu3+ emission, mainly consisting of a sharp PL peak at 622 nm, observed in O2-annealed films, where the presence of a SiO2 layer at the Eu2O3/Si interface prevents Eu2+ formation.

© 2012 OSA

OCIS Codes
(160.5690) Materials : Rare-earth-doped materials
(250.5230) Optoelectronics : Photoluminescence

ToC Category:

Original Manuscript: December 20, 2011
Manuscript Accepted: February 3, 2012
Published: February 21, 2012

Gabriele Bellocchi, Giorgia Franzò, Fabio Iacona, Simona Boninelli, Maria Miritello, Tiziana Cesca, and Francesco Priolo, "Eu3+ reduction and efficient light emission in Eu2O3 films deposited on Si substrates," Opt. Express 20, 5501-5507 (2012)

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