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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 5 — Feb. 27, 2012
  • pp: 5636–5643

Effect of annealing treatment on electroluminescence from GaN/Si nanoheterostructure array

Chang Bao Han, Chuan He, Xiao Bo Meng, Ya Rui Wan, Yong Tao Tian, Ying Jiu Zhang, and Xin Jian Li  »View Author Affiliations

Optics Express, Vol. 20, Issue 5, pp. 5636-5643 (2012)

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A GaN/Si nanoheterostructure array was prepared by growing GaN nanostructures on silicon nanoporous pillar array (Si-NPA). Based on as-grown and annealed GaN/Si-NPA, two light-emitting diodes (LEDs) were fabricated. It was found that after the annealing treatment, both the turn-on voltage and the leakage current density of the nanoheterostructure varied greatly, together with the electroluminescence (EL) changed from a yellow band to a near infrared band. The EL variation was attributed to the radiative transition being transformed from a defect-related recombination in GaN to an interfacial recombination of GaN/Si-NPA. Ours might have provided an effective approach for fabricating GaN/Si-based LEDs with different emission wavelengths.

© 2012 OSA

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes
(160.4236) Materials : Nanomaterials

ToC Category:
Optical Devices

Original Manuscript: January 10, 2012
Revised Manuscript: February 9, 2012
Manuscript Accepted: February 9, 2012
Published: February 22, 2012

Chang Bao Han, Chuan He, Xiao Bo Meng, Ya Rui Wan, Yong Tao Tian, Ying Jiu Zhang, and Xin Jian Li, "Effect of annealing treatment on electroluminescence from GaN/Si nanoheterostructure array," Opt. Express 20, 5636-5643 (2012)

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  1. H. Morkoç and S. N. Mohammad, “High-luminosity blue and blue-green gallium nitride light-emitting diodes,” Science267(5194), 51–55 (1995). [CrossRef] [PubMed]
  2. G. Fasol, “Room-temperature blue gallium nitride laser diode,” Science272(5269), 1751–1752 (1996). [CrossRef]
  3. H. Jia, L. Guo, W. Wang, and H. Chen, “Recent progress in GaN-based light-emitting diodes,” Adv. Mater. (Deerfield Beach Fla.)21(45), 4641–4646 (2009). [CrossRef]
  4. P. Javorka, A. Alam, M. Wolter, A. Fox, M. Marso, M. Heuken, H. Luth, and P. Kordos, “AlGaN/GaN HEMTs on (111) silicon substrates,” IEEE Electron Device Lett.23(1), 4–6 (2002). [CrossRef]
  5. K. Radhakrishnan, N. Dharmarasu, Z. Sun, S. Arulkumaran, and G. I. Ng, “Demonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si(111) by plasma-assisted molecular beam epitaxy,” Appl. Phys. Lett.97(23), 232107 (2010). [CrossRef]
  6. B. Hughes, Y. Y. Yoon, D. M. Zehnder, and K. S. Boutros, “A 95% efficient normally-off GaN-on-Si HEMT hybrid-IC boost-converter with 425-W output power at 1 MHz,” presented at the Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE, USA, 16–19 Oct. 2011.
  7. A. Krost and A. Dadgar, “GaN-based devices on Si,” Phys. Status Solidi (a)194(2), 361–375 (2002). [CrossRef]
  8. S. Yoshida, S. Misawa, and S. Gonda, “Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN-coated sapphire substrates,” Appl. Phys. Lett.42(5), 427 (1983). [CrossRef]
  9. S. Luryi and E. Suhir, “New approach to the high quality epitaxial growth of lattice-mismatched materials,” Appl. Phys. Lett.49(3), 140–142 (1986). [CrossRef]
  10. C. I. Park, J. H. Kang, K. C. Kim, K. S. Nahm, E. K. Suh, and K. Y. Lim, “Metal-organic chemical vapor deposition growth of GaN thin film on 3C-SiC/Si(111) substrate using various buffer layers,” Thin Solid Films401(1–2), 60–66 (2001). [CrossRef]
  11. M. Jamil, J. R. Grandusky, V. Jindal, N. Tripathi, and F. Shahedipour-Sandvik, “Mechanism of large area dislocation defect reduction in GaN layers on AlN/Si (111) by substrate engineering,” J. Appl. Phys.102(2), 023701 (2007). [CrossRef]
  12. D. Zubia and S. D. Hersee, “Nanoheteroepitaxy: The Application of nanostructuring and substrate compliance to the heteroepitaxy of mismatched semiconductor materials,” J. Appl. Phys.85(9), 6492–6496 (1999). [CrossRef]
  13. Y.-K. Ee, J. M. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Metalorganic vapor phase epitaxy of III-nitride light-emitting diodes on nanopatterned AGOG sapphire substrate by abbreviated growth mode,” IEEE J. Sel. Top. Quantum Electron.15(4), 1066–1072 (2009). [CrossRef]
  14. Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, and C. Wetzel, “Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire,” Appl. Phys. Lett.98(15), 151102 (2011). [CrossRef]
  15. J. Liang, S. K. Hong, N. Kouklin, R. Beresford, and J. M. Xu, “Nanoheteroepitaxy of GaN on a nanopore array Si surface,” Appl. Phys. Lett.83(9), 1752 (2003). [CrossRef]
  16. S. Manna, V. D. Ashok, and S. K. De, “Rectifying properties of p-GaN nanowires and an n-silicon heterojunction vertical diode,” ACS Appl. Mater. Interfaces2(12), 3539–3543 (2010). [CrossRef] [PubMed]
  17. H. J. Xu and X. J. Li, “Silicon nanoporous pillar array: a silicon hierarchical structure with high light absorption and triple-band photoluminescence,” Opt. Express16(5), 2933–2941 (2008). [CrossRef] [PubMed]
  18. C. B. Han, C. He, and X. J. Li, “Near-infrared light emission from a GaN/Si nanoheterostructure array,” Adv. Mater. (Deerfield Beach Fla.)23(41), 4811–4814 (2011). [CrossRef] [PubMed]
  19. J. H. Lee, J. Y. Lee, J. J. Kim, H. S. Kim, N. W. Jang, W. J. Lee, and C. R. Cho, “Dependence of the diode characteristics of n-ZnO/p-Si (111) on the Si substrate doping,” J. Kor. Phys. Soc.56(1), 429–433 (2010). [CrossRef]
  20. N. H. Alvi, M. Willander, and O. Nur, “The effect of the post-growth annealing on the electroluminescence properties of n-ZnO nanorods/p-GaN light emitting diodes,” Superlattices Microstruct.47(6), 754–761 (2010). [CrossRef]
  21. H. J. Xu and X. J. Li, “Rectification effect and electron transport property of CdS/Si nanoheterostructure based on silicon nanoporous pillar array,” Appl. Phys. Lett.93(17), 172105 (2008). [CrossRef]
  22. B. L. Sharma and R. K. Purohit, Semiconductor heterojunctions. (Pergamon Press, Oxford, 1974).
  23. S. Liu, T. Chen, Y. Jiang, G. Ru, and X. Qu, “The effect of postannealing on the electrical properties of well-aligned n-ZnO nanorods/p-Si heterojunction,” J. Appl. Phys.105(11), 114504 (2009). [CrossRef]
  24. A. Rose, “Space-charge-limited currents in solids,” Phys. Rev.97(6), 1538–1544 (1955). [CrossRef]
  25. R. Ghosh and D. Basak, “Electrical and ultraviolet photoresponse properties of quasialigned ZnO nanowires/p-Si heterojunction,” Appl. Phys. Lett.90(24), 243106 (2007). [CrossRef]
  26. M. Dutta and D. Basak, “p-ZnO/n-Si heterojunction: Sol-gel fabrication, photoresponse properties, and transport mechanism,” Appl. Phys. Lett.92(21), 212112 (2008). [CrossRef]
  27. N. Bano, I. Hussain, O. Nur, M. Willander, and P. Klason, “Study of radiative defects using current-voltage characteristics in ZnO rods catalytically grown on 4H-p-SiC,” J. Nanomater.2010, 1–5 (2010). [CrossRef]
  28. T. A. Burr, A. A. Seraphin, E. Werwa, and K. D. Kolenbrander, “Carrier transport in thin films of silicon nanoparticles,” Phys. Rev. B56(8), 4818–4824 (1997). [CrossRef]
  29. M. A. Reshchikov and H. Morkoç, “Luminescence properties of defects in GaN,” J. Appl. Phys.97(6), 061301 (2005). [CrossRef]
  30. J. Neugebauer and C. G. Van de Walle, “Gallium vacancies and the yellow luminescence in GaN,” Appl. Phys. Lett.69(4), 503–505 (1996). [CrossRef]
  31. T. Mattila and R. M. Nieminen, “Point-defect complexes and broadband luminescence in GaN and AlN,” Phys. Rev. B55(15), 9571–9576 (1997). [CrossRef]
  32. S. Limpijumnong and C. G. Van de Walle, “Diffusivity of native defects in GaN,” Phys. Rev. B69(3), 035207 (2004). [CrossRef]
  33. B. Unal and S. C. Bayliss, “Photovoltaic effects from porous Si,” J. Phys. D Appl. Phys.30(19), 2763–2769 (1997). [CrossRef]
  34. H.-J. Xu, X.-N. Fu, X.-R. Sun, and X.-J. Li, “Investigations on the structural and optical properties of silicon nanoporous pillar array,” Acta Chimi. Sin.54(5), 2352–2357 (2005).
  35. J. I. Pankove and H. Schade, “Photoemission from GaN,” Appl. Phys. Lett.25(1), 53–55 (1974). [CrossRef]
  36. J. I. Pankove, Electroluminescence (Springer, New York 1977).
  37. R. M. Farrell, P. S. Hsu, D. A. Haeger, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett.96(23), 231113 (2010). [CrossRef]
  38. H. Zhao and N. Tansu, “Optical gain characteristics of staggered InGaN quantum wells lasers,” J. Appl. Phys.107(11), 113110 (2010). [CrossRef]
  39. H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett.98(15), 151115 (2011). [CrossRef]
  40. C.-H. Lu, C.-C. Lan, Y.-L. Lai, Y.-L. Li, and C.-P. Liu, “Enhancement of green emission from InGaN/GaN multiple quantum wells via coupling to surface plasmons in a two-dimensional silver array,” Adv. Funct. Mater.21(24), 4719–4723 (2011). [CrossRef]

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