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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 5 — Feb. 27, 2012
  • pp: 5636–5643

Effect of annealing treatment on electroluminescence from GaN/Si nanoheterostructure array

Chang Bao Han, Chuan He, Xiao Bo Meng, Ya Rui Wan, Yong Tao Tian, Ying Jiu Zhang, and Xin Jian Li  »View Author Affiliations


Optics Express, Vol. 20, Issue 5, pp. 5636-5643 (2012)
http://dx.doi.org/10.1364/OE.20.005636


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Abstract

A GaN/Si nanoheterostructure array was prepared by growing GaN nanostructures on silicon nanoporous pillar array (Si-NPA). Based on as-grown and annealed GaN/Si-NPA, two light-emitting diodes (LEDs) were fabricated. It was found that after the annealing treatment, both the turn-on voltage and the leakage current density of the nanoheterostructure varied greatly, together with the electroluminescence (EL) changed from a yellow band to a near infrared band. The EL variation was attributed to the radiative transition being transformed from a defect-related recombination in GaN to an interfacial recombination of GaN/Si-NPA. Ours might have provided an effective approach for fabricating GaN/Si-based LEDs with different emission wavelengths.

© 2012 OSA

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes
(160.4236) Materials : Nanomaterials

ToC Category:
Optical Devices

History
Original Manuscript: January 10, 2012
Revised Manuscript: February 9, 2012
Manuscript Accepted: February 9, 2012
Published: February 22, 2012

Citation
Chang Bao Han, Chuan He, Xiao Bo Meng, Ya Rui Wan, Yong Tao Tian, Ying Jiu Zhang, and Xin Jian Li, "Effect of annealing treatment on electroluminescence from GaN/Si nanoheterostructure array," Opt. Express 20, 5636-5643 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-5-5636


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