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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 7 — Mar. 26, 2012
  • pp: 8093–8099

Indium-rich InGaN epitaxial layers grown pseudomorphically on a nano-sculpted InGaN template

J. J. Xue, D. J. Chen, B. Liu, H. Lu, R. Zhang, Y. D. Zheng, B. Cui, Andrew M. Wowchak, Amir M. Dabiran, K. Xu, and J. P. Zhang  »View Author Affiliations


Optics Express, Vol. 20, Issue 7, pp. 8093-8099 (2012)
http://dx.doi.org/10.1364/OE.20.008093


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Abstract

Indium-rich InGaN epitaxial layers with a p-i-n structure were grown pseudomorphically on a strain-relaxed InGaN template to reduce structural strain induced by lattice mismatch. We applied a nano-sculpting process to improve the crystal quality of the strain-relaxed InGaN template. The results show that the nano-sculpting process can suppress effectively the threading dislocation generation and improves significantly the I-V characteristic of the InGaN p-i-n structure. This InGaN template technique with nano-sculpting process shows great potential for future applications in indium-rich InGaN optic-electron devices.

© 2012 OSA

OCIS Codes
(160.6000) Materials : Semiconductor materials
(310.1860) Thin films : Deposition and fabrication
(310.4165) Thin films : Multilayer design
(310.4925) Thin films : Other properties (stress, chemical, etc.)

ToC Category:
Thin Films

History
Original Manuscript: January 26, 2012
Revised Manuscript: March 19, 2012
Manuscript Accepted: March 20, 2012
Published: March 22, 2012

Citation
J. J. Xue, D. J. Chen, B. Liu, H. Lu, R. Zhang, Y. D. Zheng, B. Cui, Andrew M. Wowchak, Amir M. Dabiran, K. Xu, and J. P. Zhang, "Indium-rich InGaN epitaxial layers grown pseudomorphically on a nano-sculpted InGaN template," Opt. Express 20, 8093-8099 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-7-8093


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