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Energy Express

Energy Express

  • Editor: Bernard Kippelen
  • Vol. 20, Iss. S1 — Jan. 2, 2012
  • pp: A133–A140

Performance enhancement of blue light-emitting diodes without an electron-blocking layer by using special designed p-type doped InGaN barriers

Yun-Yan Zhang, Guang-Han Fan, Yi-An Yin, and Guang-Rui Yao  »View Author Affiliations


Optics Express, Vol. 20, Issue S1, pp. A133-A140 (2012)
http://dx.doi.org/10.1364/OE.20.00A133


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Abstract

In this study, the characteristics of the nitride-based blue light-emitting diode (LED) without an electron-blocking layer (EBL) are analyzed numerically. The emission spectra, carrier concentrations in the quantum wells (QWs), energy band diagrams, electrostatic fields, and internal quantum efficiency (IQE) are investigated. The simulation results indicate that the LED without an EBL has a better hole-injection efficiency and smaller electrostatic fields in its active region over the conventional LED with an AlGaN EBL. The simulation results also show that the LED without an EBL has severe efficiency droop. However, when the special designed p-type doped InGaN QW barriers are used, the efficiency droop is markedly improved and the electroluminescence (EL) emission intensity is greatly enhanced which is due to the improvement of the hole uniformity in the active region and small electron leakage.

© 2012 OSA

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(150.2945) Machine vision : Illumination design

ToC Category:
Light-Emitting Diodes

History
Original Manuscript: August 15, 2011
Revised Manuscript: November 11, 2011
Manuscript Accepted: November 29, 2011
Published: January 1, 2012

Citation
Yun-Yan Zhang, Guang-Han Fan, Yi-An Yin, and Guang-Rui Yao, "Performance enhancement of blue light-emitting diodes without an electron-blocking layer by using special designed p-type doped InGaN barriers," Opt. Express 20, A133-A140 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-S1-A133


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