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Energy Express

Energy Express

  • Editor: Bernard Kippelen
  • Vol. 20, Iss. S4 — Jul. 2, 2012
  • pp: A519–A529

Wideband enhancement of infrared absorption in a direct band-gap semiconductor by using nonabsorptive pyramids

Weitao Dai, Daniel Yap, and Gang Chen  »View Author Affiliations


Optics Express, Vol. 20, Issue S4, pp. A519-A529 (2012)
http://dx.doi.org/10.1364/OE.20.00A519


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Abstract

Efficient trapping of the light in a photon absorber or a photodetector can improve its performance and reduce its cost. In this paper we investigate two designs for light-trapping in application to infrared absorption. Our numerical simulations demonstrate that nonabsorptive pyramids either located on top of an absorbing film or having embedded absorbing rods can efficiently enhance the absorption in the absorbing material. A spectrally averaged absorptance of 83% is achieved compared to an average absorptance of 28% for the optimized multilayer structure that has the same amount of absorbing material. This enhancement is explained by the coupled-mode theory. Similar designs can also be applied to solar cells.

© 2012 OSA

OCIS Codes
(040.0040) Detectors : Detectors
(350.4238) Other areas of optics : Nanophotonics and photonic crystals

ToC Category:
Thin Films

History
Original Manuscript: March 30, 2012
Revised Manuscript: May 25, 2012
Manuscript Accepted: May 25, 2012
Published: June 15, 2012

Citation
Weitao Dai, Daniel Yap, and Gang Chen, "Wideband enhancement of infrared absorption in a direct band-gap semiconductor by using nonabsorptive pyramids," Opt. Express 20, A519-A529 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-S4-A519


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