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Energy Express

Energy Express

  • Editor: Christian Seassal
  • Vol. 20, Iss. S6 — Nov. 5, 2012
  • pp: A806–A811

Near infrared enhancement in CIGS-based solar cells utilizing a ZnO:H window layer

Chi-Li Yeh, Hung-Ru Hsu, Sheng-Hui Chen, and Yung-sheng Liu  »View Author Affiliations


Optics Express, Vol. 20, Issue S6, pp. A806-A811 (2012)
http://dx.doi.org/10.1364/OE.20.00A806


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Abstract

We investigated the near infrared enhancement in Cu(In,Ga)Se2 (CIGS)- based solar cells utilizing a hydrogen-doping ZnO (ZnO:H) window layer. The results show that the carrier concentration of ZnO:H film is lower than that of AZO film which can increase the transmittance in the NIR. The advantage of ZnO:H film is higher Hall mobility than AZO film. Thus ZnO:H film has similar resistivity to AZO film. It was found that the cell efficiency was 12.4 and 13% for the AZO device and the ZnO:H device, respectively. The cell efficiency is enhanced by 4.8%. Furthermore, the results indicate that, the ZnO:H film is superior to the AZO film as the window layer for CIGS-based solar cells.

© 2012 OSA

OCIS Codes
(310.3840) Thin films : Materials and process characterization
(310.6860) Thin films : Thin films, optical properties

ToC Category:
Photovoltaics

History
Original Manuscript: June 11, 2012
Revised Manuscript: July 10, 2012
Manuscript Accepted: July 10, 2012
Published: September 12, 2012

Citation
Chi-Li Yeh, Hung-Ru Hsu, Sheng-Hui Chen, and Yung-sheng Liu, "Near infrared enhancement in CIGS-based solar cells utilizing a ZnO:H window layer," Opt. Express 20, A806-A811 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-S6-A806


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