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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 1 — Jan. 14, 2013
  • pp: 1128–1136

Dislocation density dependent electroabsorption in epitaxial lateral overgrown InGaN/GaN quantum structures

Emre Sari, Lee Woon Jang, Jong Hyeob Baek, In Hwan Lee, Xiao Wei Sun, and Hilmi Volkan Demir  »View Author Affiliations

Optics Express, Vol. 21, Issue 1, pp. 1128-1136 (2013)

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We study electroabsorption (EA) behavior of InGaN/GaN quantum structures grown using epitaxial lateral overgrowth (ELOG) in correlation with their dislocation density levels and in comparison to steady state and time-resolved photoluminescence measurements. The results reveal that ELOG structures with decreasing mask stripe widths exhibit stronger EA performance, with a maximum EA enhancement factor of 4.8 compared to the reference without ELOG. The analyses show that the EA performance follows similar trends with decreasing dislocation density as the essential parameters of the photoluminescence spectra (peak position, width and intensity) together with the photoluminescence lifetimes. While keeping the growth window widths constant, compared to photoluminescence behavior, however, EA surprisingly exhibits the largest performance variation, making EA the most sensitive to the mask stripe widths.

© 2013 OSA

OCIS Codes
(160.4760) Materials : Optical properties
(160.6000) Materials : Semiconductor materials
(230.0250) Optical devices : Optoelectronics

ToC Category:

Original Manuscript: September 18, 2012
Revised Manuscript: November 15, 2012
Manuscript Accepted: December 13, 2012
Published: January 10, 2013

Emre Sari, Lee Woon Jang, Jong Hyeob Baek, In Hwan Lee, Xiao Wei Sun, and Hilmi Volkan Demir, "Dislocation density dependent electroabsorption in epitaxial lateral overgrown InGaN/GaN quantum structures," Opt. Express 21, 1128-1136 (2013)

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