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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 1 — Jan. 14, 2013
  • pp: 640–646

A CMOS-compatible approach to fabricate an ultra-thin germanium-on-insulator with large tensile strain for Si-based light emission

Shihao Huang, Weifang Lu, Cheng Li, Wei Huang, Hongkai Lai, and Songyan Chen  »View Author Affiliations

Optics Express, Vol. 21, Issue 1, pp. 640-646 (2013)

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We present a method to introduce a large biaxial tensile strain in an ultra-thin germanium-on-insulator (GOI) using selective oxidation of SiGe epilayer on silicon-on-insulator (SOI) substrate. A circular patterned Si0.81Ge0.19 mesa on SOI substrate with the sidewall protected by Si3N4 or SiO2 is selectively oxidized to generate local 12 nm GOI with high crystal quality, which shows enhanced photoluminescence due to large tensile strain. Direct band photoluminescence peak significantly shifts to longer wavelength as compared to that from bulk Ge due to a combination of strain-induced band gap reduction and quantum confinement effect.

© 2013 OSA

OCIS Codes
(130.0250) Integrated optics : Optoelectronics
(160.4670) Materials : Optical materials
(310.6860) Thin films : Thin films, optical properties

ToC Category:
Thin Films

Original Manuscript: September 5, 2012
Revised Manuscript: November 2, 2012
Manuscript Accepted: November 28, 2012
Published: January 7, 2013

Shihao Huang, Weifang Lu, Cheng Li, Wei Huang, Hongkai Lai, and Songyan Chen, "A CMOS-compatible approach to fabricate an ultra-thin germanium-on-insulator with large tensile strain for Si-based light emission," Opt. Express 21, 640-646 (2013)

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