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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 1 — Jan. 14, 2013
  • pp: 867–876

Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown on silicon

Elizabeth H. Edwards, Leon Lever, Edward T. Fei, Theodore I. Kamins, Zoran Ikonic, James S. Harris, Robert W. Kelsall, and David A. B. Miller  »View Author Affiliations


Optics Express, Vol. 21, Issue 1, pp. 867-876 (2013)
http://dx.doi.org/10.1364/OE.21.000867


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Abstract

We demonstrate electroabsorption contrast greater than 5 dB over the entire telecommunication S- and C-bands with only 1V drive using a new Ge/SiGe QW epitaxy design approach; further, this is demonstrated with the thinnest Ge/SiGe epitaxy to date, using a virtual substrate only 320-nm-thick. We use an eigenmode expansion method to model the optical coupling between SOI waveguides and both vertically and butt-coupled Ge/SiGe devices, and show that this reduction in thickness is expected to lead to a significant improvement in the insertion loss of waveguide-integrated devices.

© 2013 OSA

OCIS Codes
(160.2100) Materials : Electro-optical materials
(230.2090) Optical devices : Electro-optical devices
(230.4110) Optical devices : Modulators
(250.3140) Optoelectronics : Integrated optoelectronic circuits

ToC Category:
Optoelectronics

History
Original Manuscript: October 25, 2012
Revised Manuscript: December 19, 2012
Manuscript Accepted: December 19, 2012
Published: January 8, 2013

Citation
Elizabeth H. Edwards, Leon Lever, Edward T. Fei, Theodore I. Kamins, Zoran Ikonic, James S. Harris, Robert W. Kelsall, and David A. B. Miller, "Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown on silicon," Opt. Express 21, 867-876 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-1-867


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References

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