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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 10 — May. 20, 2013
  • pp: 12249–12259

Electromagnetically induced grating in asymmetric quantum wells via Fano interference

Fengxue Zhou, Yihong Qi, Hui Sun, Dijun Chen, Jie Yang, Yueping Niu, and Shangqing Gong  »View Author Affiliations

Optics Express, Vol. 21, Issue 10, pp. 12249-12259 (2013)

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We propose a scheme for obtaining an electromagnetically induced grating in an asymmetric semiconductor quantum well (QW) structure via Fano interference. In our structure, owing to Fano interference, the diffraction intensity of the grating, especially the first-order diffraction, can be significantly enhanced. The diffraction efficiency of the grating can be controlled efficiently by tuning the control field intensity, the interaction length, the coupling strength of tunneling, etc. This investigation may be used to develop novel photonic devices in semiconductor QW systems.

© 2013 OSA

OCIS Codes
(050.2770) Diffraction and gratings : Gratings
(270.1670) Quantum optics : Coherent optical effects
(160.4236) Materials : Nanomaterials

ToC Category:
Diffraction and Gratings

Original Manuscript: April 16, 2013
Revised Manuscript: April 27, 2013
Manuscript Accepted: April 27, 2013
Published: May 10, 2013

Fengxue Zhou, Yihong Qi, Hui Sun, Dijun Chen, Jie Yang, Yueping Niu, and Shangqing Gong, "Electromagnetically induced grating in asymmetric quantum wells via Fano interference," Opt. Express 21, 12249-12259 (2013)

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