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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 11 — Jun. 3, 2013
  • pp: 13564–13571

Simple and compact V-cavity semiconductor laser with 50×100 GHz wavelength tuning

Sen Zhang, Jianjun Meng, Shanli Guo, Lei Wang, and Jian-Jun He  »View Author Affiliations

Optics Express, Vol. 21, Issue 11, pp. 13564-13571 (2013)

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Abstract: We report simple and compact V-cavity semiconductor laser capable of full-band wavelength tuning. A half-wave coupler is used to obtain high side-mode suppression ratio (SMSR) without any grating or epitaxial regrowth. Temperature induced gain spectrum shift is employed in combination with the Vernier tuning mechanism to extend the wavelength tuning range beyond the free spectral range limit. Wavelength tuning of 50 channels at 100GHz spacing with SMSR up to 38 dB has been demonstrated. We show that with a temperature variation of 35°C, the tuning range can be extended by about 15 nm, in contrast to 0.1 nm/°C for thermo-optic tuning range in grating based lasers. At a fixed temperature, consecutive wavelength tuning of 31 channels was achieved. The response time of the channel switching under the current-tuning regime is measured to be about 20μs. The large tuning range that can cover the full C-band will enable such a simple, compact and potentially low-cost tunable laser to be used in wavelength-agile access and data center networks.

© 2013 OSA

OCIS Codes
(140.5960) Lasers and laser optics : Semiconductor lasers
(250.5300) Optoelectronics : Photonic integrated circuits

ToC Category:
Lasers and Laser Optics

Original Manuscript: May 1, 2013
Revised Manuscript: May 18, 2013
Manuscript Accepted: May 19, 2013
Published: May 30, 2013

Sen Zhang, Jianjun Meng, Shanli Guo, Lei Wang, and Jian-Jun He, "Simple and compact V-cavity semiconductor laser with 50×100 GHz wavelength tuning," Opt. Express 21, 13564-13571 (2013)

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