OSA's Digital Library

Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 14 — Jul. 15, 2013
  • pp: 16578–16583

Improvement of UV electroluminescence of n-ZnO/p-GaN heterojunction LED by ZnS interlayer

Lichun Zhang, Qingshan Li, Liang Shang, Feifei Wang, Chong Qu, and Fengzhou Zhao  »View Author Affiliations


Optics Express, Vol. 21, Issue 14, pp. 16578-16583 (2013)
http://dx.doi.org/10.1364/OE.21.016578


View Full Text Article

Enhanced HTML    Acrobat PDF (2757 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations

Abstract

n-ZnO/p-GaN heterojunction light emitting diodes with different interfacial layers were fabricated by pulsed laser deposition. The electroluminescence (EL) spectra of the n-ZnO/p-GaN diodes display a broad blue-violet emission centered at 430 nm, whereas the n-ZnO/ZnS/p-GaN and n-ZnO/AlN/p-GaN devices exhibit ultraviolet (UV) emission. Compared with the AlN interlayer, which is blocking both electron and hole at hetero-interface, the utilization of ZnS as intermediate layer can lower the barrier height for holes and keep an effective blocking for electron. Thus, an improved UV EL intensity and a low turn-on voltage (~5V) were obtained. The results were studied by peak-deconvolution with Gaussian functions and were discussed using the band diagram of heterojunctions.

© 2013 OSA

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Optical Devices

History
Original Manuscript: May 7, 2013
Revised Manuscript: June 12, 2013
Manuscript Accepted: June 12, 2013
Published: July 2, 2013

Citation
Lichun Zhang, Qingshan Li, Liang Shang, Feifei Wang, Chong Qu, and Fengzhou Zhao, "Improvement of UV electroluminescence of n-ZnO/p-GaN heterojunction LED by ZnS interlayer," Opt. Express 21, 16578-16583 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-14-16578


Sort:  Author  |  Year  |  Journal  |  Reset  

References

  1. S. K. Jha, C. Luan, C. H. To, O. Kutsay, J. Kováč, J. A. Zapien, I. Bello, and S. T. Lee, “ZnO-nanorod-array/p-GaN high-performance ultra-violet light emitting devices prepared by simple solution synthesis,” Appl. Phys. Lett.101(21), 211116 (2012). [CrossRef]
  2. T. S. Lin and C. T. Lee, “Performance investigation of p-i-n ZnO-based thin film homojunction ultraviolet photodetectors,” Appl. Phys. Lett.101(22), 221118 (2012). [CrossRef]
  3. Y. S. Choi, J. W. Kang, D. K. Hwang, and S. J. Park, “Recent advances in ZnO-based light-emitting diodes,” IEEE Trans. Electron. Dev.57(1), 26–41 (2010). [CrossRef]
  4. M. Y. Ke, T. C. Lu, S. C. Yang, C. P. Chen, Y. W. Cheng, L. Y. Chen, C. Y. Chen, J. H. He, and J. J. Huang, “UV light emission from GZO/ZnO/GaN heterojunction diodes with carrier confinement layers,” Opt. Express17(25), 22912–22917 (2009). [CrossRef] [PubMed]
  5. J. T. Chen, W. C. Lai, C. H. Chen, Y. Y. Yang, J. K. Sheu, and L. W. Lai, “Electroluminescence of ZnO nanocrystal in sputtered ZnO-SiO2 nanocomposite light-emitting devices,” Opt. Express19(12), 11873–11879 (2011). [CrossRef] [PubMed]
  6. S. G. Zhang, X. W. Zhang, F. T. Si, J. J. Dong, J. X. Wang, X. Liu, Z. G. Yin, and H. L. Gao, “Ordered ZnO nanorods-based heterojunction light-emitting diodes with graphene current spreading layer,” Appl. Phys. Lett.101(12), 121104 (2012). [CrossRef]
  7. J. Ye, Y. Zhao, L. B. Tang, L. M. Chen, C. M. Luk, S. F. Yu, S. T. Lee, and S. P. Lau, “Ultraviolet electroluminescence from two-dimensional ZnO nanomesh/GaN heterojunction light emitting diodes,” Appl. Phys. Lett.98(26), 263101 (2011). [CrossRef]
  8. X. M. Zhang, M. Y. Lu, Y. Zhang, L. J. Chen, and Z. L. Wang, “Fabrication of a high-brightness blue-light-emitting diode using a ZnO-nanowire array grown on p-GaN thin Film,” Adv. Mater.21(27), 2767–2770 (2009). [CrossRef]
  9. S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, Z. G. Wang, S. Qu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer,” J. Appl. Phys.109(9), 093708 (2011). [CrossRef]
  10. J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett.96(20), 201102 (2010). [CrossRef]
  11. Y. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, “Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes,” Appl. Phys. Lett.83(14), 2943–2945 (2003). [CrossRef]
  12. H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in Zinc Oxide,” Adv. Mater.21(16), 1613–1617 (2009). [CrossRef]
  13. H. Huang, G. Fang, Y. Li, S. Li, X. Mo, H. Long, H. Wang, D. L. Carroll, and X. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett.100(23), 233502 (2012). [CrossRef]
  14. K. M. Yeung, W. S. Tsang, C. L. Mak, and K. H. Wong, “Optical studies of ZnS:Mn films grown by pulsed laser deposition,” J. Appl. Phys.92(7), 3636–3640 (2002). [CrossRef]
  15. M. Y. Lu, J. H. Song, M. P. Lu, C. Y. Lee, L. J. Chen, and Z. L. Wang, “ZnO-ZnS heterojunction and ZnS nanowire arrays for electricity generation,” ACS Nano3(2), 357–362 (2009). [CrossRef] [PubMed]
  16. J. M. Siqueiros, R. Machorro, and L. E. Regalado, “Determination of the optical constants of MgF2 and ZnS from spectrophotometric measurements and the classical oscillator method,” Appl. Opt.27(12), 2549–2553 (1988). [CrossRef] [PubMed]
  17. N. Sinha, G. E. Wabiszewski, R. Mahameed, V. V. Felmetsger, S. M. Tanner, R. W. Carpick, and G. Piazza, “Piezoelectric aluminum nitride nanoelectromechanical actuators,” Appl. Phys. Lett.95(5), 053106 (2009). [CrossRef]
  18. H. B. Zeng, G. T. Duan, Y. Li, S. K. Yang, X. X. Xu, and W. P. Cai, “Blue Luminescence of ZnO Nanoparticles Based on Non-Equilibrium Processes: Defect Origins and Emission Controls,” Adv. Funct. Mater.20(4), 561–572 (2010). [CrossRef]
  19. Y. Y. Gong, T. Andelman, G. F. Neumark, S. O’Brien, and I. L. Kuskovsky, “Origin of defect-related green emission from ZnO nanoparticles: effect of surface modification,” Nanoscale Res. Lett.2(6), 297–302 (2007). [CrossRef]
  20. S. Nakamura, T. Mukai, and M. Senon, “High-power GaN p-n junction blue-light-emitting diodes,” Jpn. J. Appl. Phys.30(Part 2, No. 12A), L1998–L2001 (1991). [CrossRef]
  21. M. A. Khan, R. A. Qchen, Skogman, and J. N. Kuznia, “Violet-blue GaN homojunction light emitting diodes with rapid thermal annealed p-type layers,” Appl. Phys. Lett.66(16), 2046–2047 (1995).
  22. G. Y. Zhu, C. X. Xu, Y. Lin, Z. L. Shi, J. T. Li, T. Ding, Z. S. Tian, and G. F. Chen, “Ultraviolet electroluminescence from horizontal ZnO microrods/GaN heterojunction light-emitting diode array,” Appl. Phys. Lett.101(4), 041110 (2012). [CrossRef]
  23. S. Xu, C. Xu, Y. Liu, Y. F. Hu, R. S. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater.22(42), 4749–4753 (2010). [CrossRef] [PubMed]

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

Figures

Fig. 1 Fig. 2 Fig. 3
 
Fig. 4 Fig. 5
 

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited