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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 14 — Jul. 15, 2013
  • pp: 16716–16721

Improved sinusoidal gating with balanced InGaAs/InP Single Photon Avalanche Diodes

Zhiwen Lu, Wenlu Sun, Qiugui Zhou, Joe Campbell, Xudong Jiang, and Mark A. Itzler  »View Author Affiliations


Optics Express, Vol. 21, Issue 14, pp. 16716-16721 (2013)
http://dx.doi.org/10.1364/OE.21.016716


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Abstract

We report balanced InGaAs/InP single photon avalanche diodes (SPADs) operated in sinusoidal gating mode with a tunable phase shifter to reduce common mode noise. This technique enables detection of small avalanche pulses, which results in reduced afterpulsing. For laser repletion rate of 20 MHz at 240 K, the dark count rate for photon detection efficiency of 10% is 8.9 kHz.

© 2013 OSA

OCIS Codes
(230.0040) Optical devices : Detectors
(230.0250) Optical devices : Optoelectronics
(250.1345) Optoelectronics : Avalanche photodiodes (APDs)

ToC Category:
Detectors

History
Original Manuscript: April 5, 2013
Revised Manuscript: May 14, 2013
Manuscript Accepted: May 16, 2013
Published: July 5, 2013

Citation
Zhiwen Lu, Wenlu Sun, Qiugui Zhou, Joe Campbell, Xudong Jiang, and Mark A. Itzler, "Improved sinusoidal gating with balanced InGaAs/InP Single Photon Avalanche Diodes," Opt. Express 21, 16716-16721 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-14-16716


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