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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 14 — Jul. 15, 2013
  • pp: 17309–17314

Ge/Si heterojunction photodiodes fabricated by low temperature wafer bonding

Farzan Gity, Aidan Daly, Bradley Snyder, Frank H. Peters, John Hayes, Cindy Colinge, Alan P. Morrison, and Brian Corbett  »View Author Affiliations

Optics Express, Vol. 21, Issue 14, pp. 17309-17314 (2013)

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We report on the photoresponse of an asymmetrically doped p-Ge/n+-Si heterojunction photodiode fabricated by wafer bonding. Responsivities in excess of 1 A/W at 1.55 μm are measured with a 5.4 μm thick Ge layer under surface-normal illumination. Capacitance−voltage measurements show that the interfacial band structure is dependent on both temperature and light level, moving from depletion of holes at −50 °C to accumulation at 20 °C. Interface traps filled by photo-generated and thermally-generated carriers are shown to play a crucial role. Their filling alters the potential barrier height at the interface leading to increased flow of dark current and the above unity responsivity.

© 2013 OSA

OCIS Codes
(130.0250) Integrated optics : Optoelectronics
(130.3120) Integrated optics : Integrated optics devices
(230.5170) Optical devices : Photodiodes

ToC Category:
Integrated Optics

Original Manuscript: February 28, 2013
Revised Manuscript: May 2, 2013
Manuscript Accepted: May 23, 2013
Published: July 12, 2013

Farzan Gity, Aidan Daly, Bradley Snyder, Frank H. Peters, John Hayes, Cindy Colinge, Alan P. Morrison, and Brian Corbett, "Ge/Si heterojunction photodiodes fabricated by low temperature wafer bonding," Opt. Express 21, 17309-17314 (2013)

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