OSA's Digital Library

Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 15 — Jul. 29, 2013
  • pp: 18236–18248

Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform

Qing Li, Ali A. Eftekhar, Majid Sodagar, Zhixuan Xia, Amir H. Atabaki, and Ali Adibi  »View Author Affiliations


Optics Express, Vol. 21, Issue 15, pp. 18236-18248 (2013)
http://dx.doi.org/10.1364/OE.21.018236


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Abstract

We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (∼ 6 × 106 for 60 μm radius and ∼ 2 × 107 for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 106.

© 2013 OSA

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(230.5750) Optical devices : Resonators

ToC Category:
Integrated Optics

History
Original Manuscript: June 17, 2013
Revised Manuscript: July 15, 2013
Manuscript Accepted: July 15, 2013
Published: July 22, 2013

Citation
Qing Li, Ali A. Eftekhar, Majid Sodagar, Zhixuan Xia, Amir H. Atabaki, and Ali Adibi, "Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform," Opt. Express 21, 18236-18248 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-15-18236


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