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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 18 — Sep. 9, 2013
  • pp: 21329–21336

Time-resolved photoluminescence of silicon microstructures fabricated by femtosecond laser in air

Zhandong Chen, Qiang Wu, Ming Yang, Jianghong Yao, Romano A. Rupp, Yaan Cao, and Jingjun Xu  »View Author Affiliations

Optics Express, Vol. 21, Issue 18, pp. 21329-21336 (2013)

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Green photoluminescence (PL) from silicon microstructures fabricated by femtosecond laser in air was studied at different temperature by time-resolved spectroscopy. The PL decay profiles are well fitted by a stretched exponential function: I(t)=I(0)exp[ (t/τ) β ]. The dependence of the decay time constant τ and of the stretching index β on PL photon energy and on the temperature is investigated. A model of transport and recombination of the carriers is introduced as a possible explanation of the stretched exponential decay. The nonradiative recombination rate of the localized carriers, which is dependent on the carrier density and influenced by the trapping site density and the temperature, is deduced to be responsible for this kind of decay.

© 2013 OSA

OCIS Codes
(250.5230) Optoelectronics : Photoluminescence
(300.6500) Spectroscopy : Spectroscopy, time-resolved
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors

ToC Category:

Original Manuscript: July 15, 2013
Revised Manuscript: August 28, 2013
Manuscript Accepted: August 28, 2013
Published: September 4, 2013

Zhandong Chen, Qiang Wu, Ming Yang, Jianghong Yao, Romano A. Rupp, Yaan Cao, and Jingjun Xu, "Time-resolved photoluminescence of silicon microstructures fabricated by femtosecond laser in air," Opt. Express 21, 21329-21336 (2013)

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