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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 19 — Sep. 23, 2013
  • pp: 22320–22326

InGaN/GaN microcolumn light-emitting diode arrays with sidewall metal contact

Duk-Jo Kong, Si-Young Bae, Chang-Mo Kang, and Dong-Seon Lee  »View Author Affiliations

Optics Express, Vol. 21, Issue 19, pp. 22320-22326 (2013)

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In this study, we produce InGaN/GaN microcolumn LED (MC-LED) arrays having nonpolar metal sidewall contacts using a top-down method, where the metal contacts only with the sidewall of the columnar LEDs with an open top for transparency. The trapezoidal profile of the as-etched columns was altered to a rectangular profile through KOH treatment, exposing the nonpolar sidewalls. While the MC-LED with no treatment emitted no light because of the etch-damaged region, the MC-LEDs with KOH treatment exhibited much improved the electrical properties with the much higher shunt resistance due to the removal of the etch-damaged region. The optical output power was strongest for the MC-LED with a 5-min treatment indicating an almost complete removal of the damaged region.

© 2013 Optical Society of America

OCIS Codes
(220.4000) Optical design and fabrication : Microstructure fabrication
(230.3670) Optical devices : Light-emitting diodes
(310.6860) Thin films : Thin films, optical properties

ToC Category:
Optical Devices

Original Manuscript: May 2, 2013
Revised Manuscript: August 9, 2013
Manuscript Accepted: September 6, 2013
Published: September 16, 2013

Duk-Jo Kong, Si-Young Bae, Chang-Mo Kang, and Dong-Seon Lee, "InGaN/GaN microcolumn light-emitting diode arrays with sidewall metal contact," Opt. Express 21, 22320-22326 (2013)

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