4.35 kW peak power femtosecond pulse mode-locked VECSEL for supercontinuum generation

doi:10.1364/OE.21.001599

4.35 kW peak power femtosecond pulse mode-locked VECSEL for supercontinuum generation

Keith G. Wilcox, Anne C. Tropper, Harvey E. Beere, David A. Ritchie, Bernardette Kunert, Bernd Heinen, and Wolfgang Stolz »View Author Affiliations

Optics Express, Vol. 21, Issue 2, pp. 1599-1605 (2013)
http://dx.doi.org/10.1364/OE.21.001599

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Abstract

We report a passively mode-locked vertical external cavity surface emitting laser (VECSEL) producing 400 fs pulses with 4.35 kW peak power. The average output power was 3.3 W and the VECSEL had a repetition rate of 1.67 GHz at a center wavelength of 1013 nm. A near-antiresonant, substrate-removed, 10 quantum well (QW) gain structure designed to enable femtosecond pulse operation is used. A SESAM which uses fast carrier recombination at the semiconductor surface and the optical Stark effect enables passive mode-locking. When 1 W of the VECSEL output is launched into a 2 m long photonic crystal fiber (PCF) with a 2.2 µm core, a supercontinuum spanning 175 nm, with average power 0.5 W is produced.

OCIS Codes
(140.4050) Lasers and laser optics : Mode-locked lasers
(140.5960) Lasers and laser optics : Semiconductor lasers
(140.7090) Lasers and laser optics : Ultrafast lasers

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: October 23, 2012
Revised Manuscript: December 11, 2012
Manuscript Accepted: January 6, 2013
Published: January 15, 2013

Citation
Keith G. Wilcox, Anne C. Tropper, Harvey E. Beere, David A. Ritchie, Bernardette Kunert, Bernd Heinen, and Wolfgang Stolz, "4.35 kW peak power femtosecond pulse mode-locked VECSEL for supercontinuum generation," Opt. Express 21, 1599-1605 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-2-1599

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References

O. G. Okhotnikov, Semiconductor Disk Lasers (Wiley-VCH, 2010).
A. H. Quarterman, K. G. Wilcox, V. Apostolopoulos, Z. Mihoubi, S. P. Elsmere, I. Farrer, D. A. Ritchie, and A. Tropper, “A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses,” Nat. Photonics3(12), 729–731 (2009). [CrossRef]
A. Härkönen, C. Grebing, J. Paajaste, R. Koskinen, J.-P. Alanko, S. Suomalainen, G. Steinmeyer, and M. Guina, “Modelocked GaSb disk laser producing 384 fs pulses at 2 µm wavelength,” Electron. Lett.47(7), 454–456 (2011). [CrossRef]
M. Scheller, T.-L. Wang, B. Kunert, W. Stolz, S. W. Koch, and J. V. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1 W of average output power,” Electron. Lett.48(10), 588–589 (2012). [CrossRef]
Z. Zhao, S. Bouchoule, J. Y. Song, E. Galopin, J.-C. Harmand, J. Decobert, G. Aubin, and J.-L. Oudar, “Subpicosecond pulse generation from a 1.56 μm mode-locked VECSEL,” Opt. Lett.36(22), 4377–4379 (2011). [CrossRef] [PubMed]
N. R. Newbury, “Searching for applications with a fine-tooth comb,” Nat. Photonics5(4), 186–188 (2011). [CrossRef]
A. Bartels, D. Heinecke, and S. A. Diddams, “10-GHz self-referenced optical frequency comb,” Science326(5953), 681 (2009). [CrossRef] [PubMed]
K. G. Wilcox, A. H. Quarterman, H. E. Beere, D. A. Ritchie, and A. C. Tropper, “Repetition-frequency-tunable mode-locked surface emitting semiconductor laser between 2.78 and 7.87 GHz,” Opt. Express19(23), 23453–23459 (2011). [CrossRef] [PubMed]
O. D. Sieber, V. J. Wittwer, M. Mangold, M. Hoffmann, M. Golling, T. Südmeyer, and U. Keller, “Femtosecond VECSEL with tunable multi-gigahertz repetition rate,” Opt. Express19(23), 23538–23543 (2011). [CrossRef] [PubMed]
B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett.48(9), 516–517 (2012). [CrossRef]
M. Hoffmann, O. D. Sieber, V. J. Wittwer, I. L. Krestnikov, D. A. Livshits, Y. Barbarin, T. Südmeyer, and U. Keller, “Femtosecond high-power quantum dot vertical external cavity surface emitting laser,” Opt. Express19(9), 8108–8116 (2011). [CrossRef] [PubMed]
P. Klopp, U. Griebner, M. Zorn, and M. Weyers, “Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser,” Appl. Phys. Lett.98(7), 071103 (2011). [CrossRef]
L. Bernstein, “Semiconductor joining by the Solid-Liquid-Interdiffusion (SLID) Process: 1. The systems Ag-In, Au-In and Cu-In,” J. Electrochem. Soc.113(12), 1282–1288 (1966). [CrossRef]
A. C. Tropper, A. H. Quarterman, and K. G. Wilcox, “Ultrafast vertical-external-cavity surface-emitting semiconductor lasers,” in Semiconductors and Semimetals 86: Advances in Semiconductor Lasers, J. J. Coleman, A. C. Bryce, and C. Jagadish, eds. (Elsevier, 2012) pp. 269–300.
K. G. Wilcox, A. H. Quarterman, H. Beere, D. A. Ritchie, and A. C. Tropper, “High peak power femtosecond pulse passively mode-locked vertical-external-cavity surface-emitting laser,” Phot. Tech. Lett.22(14), 1021–1023 (2010). [CrossRef]

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[1] O. G. Okhotnikov, Semiconductor Disk Lasers (Wiley-VCH, 2010).

[2] A. H. Quarterman, K. G. Wilcox, V. Apostolopoulos, Z. Mihoubi, S. P. Elsmere, I. Farrer, D. A. Ritchie, and A. Tropper, “A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses,” Nat. Photonics3(12), 729–731 (2009). [CrossRef]

[3] A. Härkönen, C. Grebing, J. Paajaste, R. Koskinen, J.-P. Alanko, S. Suomalainen, G. Steinmeyer, and M. Guina, “Modelocked GaSb disk laser producing 384 fs pulses at 2 µm wavelength,” Electron. Lett.47(7), 454–456 (2011). [CrossRef]

[4] M. Scheller, T.-L. Wang, B. Kunert, W. Stolz, S. W. Koch, and J. V. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1 W of average output power,” Electron. Lett.48(10), 588–589 (2012). [CrossRef]

[5] Z. Zhao, S. Bouchoule, J. Y. Song, E. Galopin, J.-C. Harmand, J. Decobert, G. Aubin, and J.-L. Oudar, “Subpicosecond pulse generation from a 1.56 μm mode-locked VECSEL,” Opt. Lett.36(22), 4377–4379 (2011). [CrossRef] [PubMed]

[6] N. R. Newbury, “Searching for applications with a fine-tooth comb,” Nat. Photonics5(4), 186–188 (2011). [CrossRef]

[7] A. Bartels, D. Heinecke, and S. A. Diddams, “10-GHz self-referenced optical frequency comb,” Science326(5953), 681 (2009). [CrossRef] [PubMed]

[8] K. G. Wilcox, A. H. Quarterman, H. E. Beere, D. A. Ritchie, and A. C. Tropper, “Repetition-frequency-tunable mode-locked surface emitting semiconductor laser between 2.78 and 7.87 GHz,” Opt. Express19(23), 23453–23459 (2011). [CrossRef] [PubMed]

[9] O. D. Sieber, V. J. Wittwer, M. Mangold, M. Hoffmann, M. Golling, T. Südmeyer, and U. Keller, “Femtosecond VECSEL with tunable multi-gigahertz repetition rate,” Opt. Express19(23), 23538–23543 (2011). [CrossRef] [PubMed]

[10] B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett.48(9), 516–517 (2012). [CrossRef]

[11] M. Hoffmann, O. D. Sieber, V. J. Wittwer, I. L. Krestnikov, D. A. Livshits, Y. Barbarin, T. Südmeyer, and U. Keller, “Femtosecond high-power quantum dot vertical external cavity surface emitting laser,” Opt. Express19(9), 8108–8116 (2011). [CrossRef] [PubMed]

[12] P. Klopp, U. Griebner, M. Zorn, and M. Weyers, “Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser,” Appl. Phys. Lett.98(7), 071103 (2011). [CrossRef]

[13] L. Bernstein, “Semiconductor joining by the Solid-Liquid-Interdiffusion (SLID) Process: 1. The systems Ag-In, Au-In and Cu-In,” J. Electrochem. Soc.113(12), 1282–1288 (1966). [CrossRef]

[14] A. C. Tropper, A. H. Quarterman, and K. G. Wilcox, “Ultrafast vertical-external-cavity surface-emitting semiconductor lasers,” in Semiconductors and Semimetals 86: Advances in Semiconductor Lasers, J. J. Coleman, A. C. Bryce, and C. Jagadish, eds. (Elsevier, 2012) pp. 269–300.

[15] K. G. Wilcox, A. H. Quarterman, H. Beere, D. A. Ritchie, and A. C. Tropper, “High peak power femtosecond pulse passively mode-locked vertical-external-cavity surface-emitting laser,” Phot. Tech. Lett.22(14), 1021–1023 (2010). [CrossRef]

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4.35 kW peak power femtosecond pulse mode-locked VECSEL for supercontinuum generation