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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 2 — Jan. 28, 2013
  • pp: 2024–2031

Optics InfoBase > Optics Express > Volume 21 > Issue 2 > Page 2024

Bending effects on lasing action of semiconductor nanowires

Weisong Yang, Yaoguang Ma, Yipei Wang, Chao Meng, Xiaoqin Wu, Yu Ye, Lun Dai, Limin Tong, Xu Liu, and Qing Yang  »View Author Affiliations


Optics Express, Vol. 21, Issue 2, pp. 2024-2031 (2013)
http://dx.doi.org/10.1364/OE.21.002024


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Abstract

High flexibility has been one of advantages for one-dimensional semiconductor nanowires (NWs) in wide application of nanoscale integrated circuits. We investigate the bending effects on lasing action of CdSe NWs. Threshold increases and differential efficiency decreases gradually when we decrease the bending radius step by step. Red shift and mode reduction in the output spectra are also observed. The bending loss of laser oscillation is considerably larger than that of photoluminescence (PL), and both show the exponential relationship with the bending radius. Diameter and mode dependent bending losses are investigated. Furthermore, the polarizations of output can be modulated linearly by bending the NWs into different angles continuously.

© 2013 OSA

OCIS Codes
(140.5960) Lasers and laser optics : Semiconductor lasers
(260.5430) Physical optics : Polarization

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: September 26, 2012
Revised Manuscript: November 16, 2012
Manuscript Accepted: January 9, 2013
Published: January 18, 2013

Citation
Weisong Yang, Yaoguang Ma, Yipei Wang, Chao Meng, Xiaoqin Wu, Yu Ye, Lun Dai, Limin Tong, Xu Liu, and Qing Yang, "Bending effects on lasing action of semiconductor nanowires," Opt. Express 21, 2024-2031 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-2-2024


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