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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 2 — Jan. 28, 2013
  • pp: 2206–2211

Direct bandgap narrowing in Ge LED’s on Si substrates

Michael Oehme, Martin Gollhofer, Daniel Widmann, Marc Schmid, Mathias Kaschel, Erich Kasper, and Jörg Schulze  »View Author Affiliations


Optics Express, Vol. 21, Issue 2, pp. 2206-2211 (2013)
http://dx.doi.org/10.1364/OE.21.002206


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Abstract

In this paper we investigate the influence of n-type doping in Ge light emitting diodes on Si substrates on the room temperature emission spectrum. The layer structures are grown with a special low temperature molecular beam epitaxy process resulting in a slight tensile strain of 0.13%. The Ge LED’s show a dominant direct bandgap emission with shrinking bandgap at the Γ point in dependence of n-type doping level. The emission shift (38 meV at 1020 cm-3) is mainly assigned to bandgap narrowing at high doping. The electroluminescence intensity increases with doping concentrations up to 3x1019 cm−3 and decreases sharply at higher doping levels. The integrated direct gap emission intensity increases superlinear with electrical current density. Power exponents vary from about 2 at low doping densities up to 3.6 at 1020 cm−3 doping density.

© 2013 OSA

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(160.3380) Materials : Laser materials
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Optical Devices

History
Original Manuscript: November 28, 2012
Manuscript Accepted: January 9, 2013
Published: January 22, 2013

Citation
Michael Oehme, Martin Gollhofer, Daniel Widmann, Marc Schmid, Mathias Kaschel, Erich Kasper, and Jörg Schulze, "Direct bandgap narrowing in Ge LED’s on Si substrates," Opt. Express 21, 2206-2211 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-2-2206


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References

  1. B. Jalali and S. Fathpour, “Silicon photonics,” J. Lightwave Technol.24(12), 4600–4615 (2006). [CrossRef]
  2. R. Soref, “Silicon Photonics: A review of recent literature,” Silicon2(1), 1–6 (2010). [CrossRef]
  3. J. Liu, R. Camacho-Aguilera, J. T. Bessette, X. Sun, X. Wang, Y. Cai, L. C. Kimerling, and J. Michel, “Ge-on-Si optoelectronics,” Thin Solid Films520(8), 3354–3360 (2012). [CrossRef]
  4. R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, “An electrically pumped germanium laser,” Opt. Express20(10), 11316–11320 (2012). [CrossRef] [PubMed]
  5. X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Toward a germanium laser for integrated silicon photonics,” IEEE J. Sel. Top. Quantum Electron.16(1), 124–131 (2010). [CrossRef]
  6. K. Alberi, J. Blacksberg, L. D. Bell, S. Nikzad, K. M. Yu, O. D. Dubon, and W. Walukiewicz, “Band anticrossing in highly mismatched SnxGe1−x semiconducting alloys,” Phys. Rev. B77(7), 073202 (2008). [CrossRef]
  7. X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes,” Opt. Lett.34(8), 1198–1200 (2009). [CrossRef] [PubMed]
  8. S. L. Cheng, J. Lu, G. Shambat, H. Y. Yu, K. Saraswat, J. Vuckovic, and Y. Nishi, “Room temperature 1.6 μm electroluminescence from Ge light emitting diode on Si substrate,” Opt. Express17(12), 10019–10024 (2009). [CrossRef]
  9. M. de Kersauson, R. Jakomin, M. El Kurdi, G. Beaudoin, N. Zerounian, F. Aniel, S. Sauvage, I. Sagnes, and P. Boucaud, “Direct and indirect band gap room temperature electroluminescence of Ge diodes,” J. Appl. Phys.108(2), 023105 (2010). [CrossRef]
  10. M. Oehme, J. Werner, M. Gollhofer, M. Schmid, M. Kaschel, E. Kasper, and J. Schulze, “Room-Temperature Electroluminescence From GeSn Light-Emitting Pin Diodes on Si,” IEEE Photon. Technol. Lett.23(23), 1751–1753 (2011). [CrossRef]
  11. T. Arguirov, M. Kittler, M. Oehme, N. V. Abrosimov, E. Kasper, and J. Schulze, “Room temperature direct band-gap emission from an unstrained Ge p-i-n LED on Si,” Solid State Phenomena178–179, 25–30 (2011). [CrossRef]
  12. D. B. M. Klaassen, J. W. Slotboom, and H. C. de Graaff, “Unified apparent bandgap narrowing in n- and p-type silicon,” Solid-State Electron.35(2), 125–129 (1992). [CrossRef]
  13. J. I. Pankove and P. Aigrain, “Optical absorption of arsenic-doped degenerate Germanium,” Phys. Rev.126(3), 956–962 (1962). [CrossRef]
  14. S. C. Jain and D. J. Roulston, “A simple expression for bandgap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1-x strained layers,” Solid-State Electron.34(5), 453–465 (1991). [CrossRef]
  15. E. Kasper, M. Oehme, J. Werner, T. Arguirov, and M. Kittler, “Direct band gap luminescence from Ge on Si pin diodes,” Front. Optoelectron.5, 256–260 (2012).
  16. M. Oehme, M. Kaschel, J. Werner, O. Kirfel, M. Schmid, B. Bahouchi, E. Kasper, and J. Schulze, “Germanium on silicon photodetectors with broad spectral range,” J. Electrochem. Soc.157(2), H144–H148 (2010). [CrossRef]
  17. M. Oehme, J. Werner, M. Kaschel, O. Kirfel, and E. Kasper, “Germanium waveguide photodetectors integrated on silicon with MBE,” Thin Solid Films517(1), 137–139 (2008). [CrossRef]
  18. M. Oehme, J. Werner, and E. Kasper, “Molecular beam epitaxy of highly antimony doped germanium on silicon,” J. Cryst. Growth310(21), 4531–4534 (2008). [CrossRef]
  19. M. Schmid, M. Oehme, M. Gollhofer, M. Kaschel, E. Kasper, and J. Schulze, “Electroluminescence of unstrained and tensile strained Ge-on-Si LEDs,” IEEE 9th International Conference on Group IV Photonics (GFP) 135 – 137 (2012).
  20. M. Oehme, M. Sarlija, D. Hähnel, M. Kaschel, J. Werner, E. Kasper, and J. Schulze, “Very high room temperature peak to valley current ratio in Si Esaki Tunneling Diodes,” IEEE Trans. Electron. Dev.57(11), 2857–2863 (2010). [CrossRef]
  21. M. Schmid, M. Oehme, M. Gollhofer, M. Kaschel, E. Kasper, and J. Schulze, “Electroluminescence of unstrained and tensile strained Ge-on-Si LEDs,” IEEE 9th International Conference on Group IV Photonics (GFP) 135 – 137 (2012).
  22. C. Haas, “Infrared Absorption in Heavily Doped n-Type Germanium,” Phys. Rev.125(6), 1965–1971 (1962). [CrossRef]

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