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1. O. Okhotnikov, “Semiconductor disk lasers,” in Physics and Technology (Wiley-VCH, 2010).
2. A. Maclean, R. Birch, P. Roth, A. Kemp, and D. Burns, “Limits on efficiency and power scaling in semiconductor disk lasers with diamond heatspreaders,” J. Opt. Soc. Am. B26(12), 2228–2236 (2009). [CrossRef]
3. S. Calvez, J. Hastie, M. Guina, O. Okhotnikov, and M. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev.3(5), 407–434 (2009). [CrossRef]
4. N. Schulz, J. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev.2(3), 160–181 (2008). [CrossRef]
5. H. Lindberg, M. Strassner, E. Gerster, J. Bengtsson, and A. Larsson, “Thermal management of optically pumped long-wavelength InP-based semiconductor disk lasers,” IEEE J. Sel. Top. Quantum Electron.11(5), 1126–1134 (2005). [CrossRef]
6. A. Kemp, G. Valentine, J. Hopkins, J. Hastie, S. Smith, S. Calvez, M. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: Finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron.41(2), 148–155 (2005). [CrossRef]
7. A. Kemp, J. Hopkins, A. Maclean, N. Schulz, M. Rattunde, J. Wagner, and D. Burns, “Thermal management in 2.3-µm semiconductor disk lasers: a finite element analysis,” IEEE J. Quantum Electron.44(2), 125–135 (2008). [CrossRef]
8. A. Ouvrard, A. Garnac, L. Cerutti, F. Genty, and D. Romanini, “Single-frequency tunable Sb-based VCSELs emitting at 2.3 µm,” IEEE Photon. Technol. Lett.17(10), 2020–2022 (2005). [CrossRef]
9. A. Garnache, A. Ouvrard, L. Cerutti, D. Barat, A. Vicet, F. Genty, Y. Rouillard, D. Romanini, and E. Cerda-Mendez, “2–2.7 µm single frequency tunable Sb-based lasers operating in CW at RT: Microcavity and External–cavity VCSELs, DFB,” Proc. SPIE6184, 61840N, 61840N-15 (2006). [CrossRef]
10. A. Garnache, A. Ouvrard, and D. Romanini, “Single-frequency operation of external-cavity VCSELs: non-linear multimode temporal dynamics and quantum limit,” Opt. Express15(15), 9403–9417 (2007). [CrossRef] [PubMed]
11. C. Spiegelberg, J. Geng, Y. Hu, Y. Kaneda, S. Jiang, and N. Peyghambarian, “Low-noise narrow-linewidth fiber laser at 1550 nm,” J. Lightwave Technol.22(1), 57–62 (2004). [CrossRef]
12. S. Spießberger, M. Schiemangk, A. Sahm, A. Wicht, H. Wenzel, A. Peters, G. Erbert, and G. Tränkle, “Micro-integrated 1 Watt semiconductor laser system with a linewidth of 3.6 kHz,” Opt. Express19(8), 7077–7083 (2011). [CrossRef] [PubMed]
13. A. Laurain, M. Myara, G. Beaudoin, I. Sagnes, and A. Garnache, “Multiwatt-power highly-coherent compact single-frequency tunable Vertical-External-Cavity-Surface-Emitting-Semiconductor-Laser,” Opt. Express18(14), 14627–14636 (2010). [CrossRef] [PubMed]
14. F. Camargo, S. Janicot, I. Sagnes, A. Garnache, P. Georges, and G. Lucas-Leclin, “Evaluation of the single-frequency operation of a short vertical external-cavity semiconductor laser at 852 nm,” Proc. SPIE8242, 82420F (2012). [CrossRef]
15. M. Jacquemet, M. Domenech, G. Lucas-Leclin, P. Georges, J. Dion, M. Strassner, I. Sagnes, and A. Garnache, “Single-frequency CW vertical external cavity surface emitting semiconductor laser at 1003 nm and 501 nm by intracavity frequency doubling,” Appl. Phys. B86(3), 503–510 (2007). [CrossRef]
16. R. Abram, K. Gardner, E. Riis, and A. Ferguson, “Narrow linewidth operation of a tunable optically pumped semiconductor laser,” Opt. Express12(22), 5434–5439 (2004). [CrossRef] [PubMed]
17. Y. Kaneda, M. Fallahi, J. Hader, J. V. Moloney, S. W. Koch, B. Kunert, and W. Stoltz, “Continuous-wave single-frequency 295 nm laser source by a frequency-quadrupled optically pumped semiconductor laser,” Opt. Lett.34(22), 3511–3513 (2009). [CrossRef] [PubMed]
18. B. Rösener, S. Kaspar, M. Rattunde, T. Töpper, C. Manz, K. Köhler, O. Ambacher, and J. Wagner, “2 μm semiconductor disk laser with a heterodyne linewidth below 10 kHz,” Opt. Lett.36(18), 3587–3589 (2011). [CrossRef] [PubMed]
19. A. Laurain, L. Cerutti, M. Myara, and A. Garnache, “2.7 µm single-frequency TEM00 operation of Sb-based diode-pumped external-cavity VCSEL,” Proc. SPIE8242, 82420 L –82421 (2012).
20. C. Symonds, J. Dion, I. Sagnes, M. Dainese, M. Strassner, L. Leroy, and J. Oudar, “High performance 1.55 µm vertical external cavity surface emitting laser with broad-band integrated dielectric-metal mirror,” Electron. Lett.40(12), 734–735 (2004). [CrossRef]
21. H. Lindberg, M. Strassner, J. Bengtsson, and A. Larsson, “InP-based optically pumped VECSEL operating CW at 1550 nm,” IEEE Photon. Technol. Lett.16(2), 362–364 (2004). [CrossRef]
22. H. Lindberg, M. Strassner, J. Bengtsson, and A. Larsson, “High-power optically pumped 1550-nm VECSEL with a bonded silicon heat spreader,” IEEE Photon. Technol. Lett.16(5), 1233–1235 (2004). [CrossRef]
23. H. Lindberg, M. Strassner, E. Gerster, and A. Larsson, “0.8 W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm,” Electron. Lett.40(10), 601–602 (2004). [CrossRef]
24. H. Lindberg, A. Larsson, and M. Strassner, “Single-frequency operation of a high-power, long-wavelength semiconductor disk laser,” Opt. Lett.30(17), 2260–2262 (2005). [CrossRef] [PubMed]
25. J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-microm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express17(11), 9047–9052 (2009). [CrossRef] [PubMed]
26. J. Lyytikäinen, J. Rautiainen, A. Sirbu, V. Iakovlev, N. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. Okhotnikov, “High-power 1.48-µm wafer-fused optically pumped semiconductor disk laser,” IEEE Photon. Technol. Lett.23(13), 917–919 (2011). [CrossRef]
27. J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. Okhotnikov, “2.6 W optically-pumped semiconductor disk laser operating at 1.57-µm using wafer fusion,” Opt. Express16(26), 21881–21886 (2008).
28. A. Rantamäki, A. Sirbu, A. Mereuta, E. Kapon, and O. Okhotnikov, “3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser,” Opt. Express18(21), 21645–21650 (2010).
29. A. Rantamäki, J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, E. Kapon, and O. G. Okhotnikov, “1 W at 785 nm from a frequency-doubled wafer-fused semiconductor disk laser,” Opt. Express20(8), 9046–9051 (2012). [CrossRef] [PubMed]
30. A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, and A. Caliman, “Wafer-fused optically pumped VECSELs emitting in the 1310-nm and 1550-nm wavebands,” Adv. Opt. Technol.2011, 209093 (2011).
31. Z. L. Liau, “Semiconductor wafer bonding via liquid capillarity,” Appl. Phys. Lett.77(5), 651–653 (2000). [CrossRef]
32. M. Guina, T. Leinonen, A. Härkönen, and M. Pessa, “High-power disk lasers based on dilute nitride heterostructures,” New J. Phys.11(12), 125019 (2009). [CrossRef]
33. R. Paschotta, “Beam quality deterioration of lasers caused by intracavity beam distortions,” Opt. Express14(13), 6069–6074 (2006). [CrossRef] [PubMed]
34. T. Okoshi, K. Kikuchi, and A. Nakayama, “Novel method for high resolution measurement of laser output spectrum,” Electron. Lett.16(16), 630–631 (1980). [CrossRef]
35. L. Richter, H. Mandelberg, M. Kruger, and P. McGrath, “Linewidth determination from self-heterodyne measurements with subcoherence delay times,” IEEE J. Quantum Electron.22(11), 2070–2074 (1986). [CrossRef]
36. M. van Exter, S. Kuppens, and J. Woerdman, “Excess phase noise in self-heterodyne detection,” IEEE J. Quantum Electron.28(3), 580–584 (1992). [CrossRef]
37. J. Geng, C. Spiegelberg, and S. Jiang, “Narrow linewidth fiber laser for 100-km optical frequency domain reflectometry,” IEEE Photon. Technol. Lett.17(9), 1827–1829 (2005). [CrossRef]
38. L. B. Mercer, “1/f frequency noise effects on self-heterodyne linewidth measurements,” J. Lightwave Technol.9(4), 485–493 (1991). [CrossRef]
39. J. P. Tourrenc, P. Signoret, M. Myara, M. Bellon, J. P. Perez, J. M. Gosalbes, R. Alabedra, and B. Orsal, “Low-frequency FM-noise-induced lineshape: a theoretical and experimental approach,” IEEE J. Quantum Electron.41(4), 549–553 (2005). [CrossRef]
40. S. Viciani, M. Gabrysch, F. Marin, F. M. Sopra, M. Moser, and K. H. Gulden, “Lineshape of a vertical cavity surface emitting laser,” Opt. Commun.206(1), 89–97 (2002). [CrossRef]
41. A. Garnache, M. Myara, A. Laurain, A. Bouchier, J. Perez, P. Signoret, I. Sagnes, and D. Romanini, “Single frequency free-running low noise compact extended-cavity semiconductor laser at high power level,” Proc. Int. Conf. Space Opt. S17, 257–258 (2008). http://www.congrexprojects.com/icso/2008-proceedings-ppts .

Adv. Opt. Technol.

• A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, and A. Caliman, “Wafer-fused optically pumped VECSELs emitting in the 1310-nm and 1550-nm wavebands,” Adv. Opt. Technol.2011, 209093 (2011).

Appl. Phys. B

• M. Jacquemet, M. Domenech, G. Lucas-Leclin, P. Georges, J. Dion, M. Strassner, I. Sagnes, and A. Garnache, “Single-frequency CW vertical external cavity surface emitting semiconductor laser at 1003 nm and 501 nm by intracavity frequency doubling,” Appl. Phys. B86(3), 503–510 (2007). [CrossRef]

Appl. Phys. Lett.

• Z. L. Liau, “Semiconductor wafer bonding via liquid capillarity,” Appl. Phys. Lett.77(5), 651–653 (2000). [CrossRef]

Electron. Lett.

• T. Okoshi, K. Kikuchi, and A. Nakayama, “Novel method for high resolution measurement of laser output spectrum,” Electron. Lett.16(16), 630–631 (1980). [CrossRef]
• C. Symonds, J. Dion, I. Sagnes, M. Dainese, M. Strassner, L. Leroy, and J. Oudar, “High performance 1.55 µm vertical external cavity surface emitting laser with broad-band integrated dielectric-metal mirror,” Electron. Lett.40(12), 734–735 (2004). [CrossRef]
• H. Lindberg, M. Strassner, E. Gerster, and A. Larsson, “0.8 W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm,” Electron. Lett.40(10), 601–602 (2004). [CrossRef]

IEEE J. Quantum Electron.

• L. Richter, H. Mandelberg, M. Kruger, and P. McGrath, “Linewidth determination from self-heterodyne measurements with subcoherence delay times,” IEEE J. Quantum Electron.22(11), 2070–2074 (1986). [CrossRef]
• M. van Exter, S. Kuppens, and J. Woerdman, “Excess phase noise in self-heterodyne detection,” IEEE J. Quantum Electron.28(3), 580–584 (1992). [CrossRef]
• A. Kemp, G. Valentine, J. Hopkins, J. Hastie, S. Smith, S. Calvez, M. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: Finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron.41(2), 148–155 (2005). [CrossRef]
• A. Kemp, J. Hopkins, A. Maclean, N. Schulz, M. Rattunde, J. Wagner, and D. Burns, “Thermal management in 2.3-µm semiconductor disk lasers: a finite element analysis,” IEEE J. Quantum Electron.44(2), 125–135 (2008). [CrossRef]
• J. P. Tourrenc, P. Signoret, M. Myara, M. Bellon, J. P. Perez, J. M. Gosalbes, R. Alabedra, and B. Orsal, “Low-frequency FM-noise-induced lineshape: a theoretical and experimental approach,” IEEE J. Quantum Electron.41(4), 549–553 (2005). [CrossRef]

IEEE J. Sel. Top. Quantum Electron.

• H. Lindberg, M. Strassner, E. Gerster, J. Bengtsson, and A. Larsson, “Thermal management of optically pumped long-wavelength InP-based semiconductor disk lasers,” IEEE J. Sel. Top. Quantum Electron.11(5), 1126–1134 (2005). [CrossRef]

IEEE Photon. Technol. Lett.

• A. Ouvrard, A. Garnac, L. Cerutti, F. Genty, and D. Romanini, “Single-frequency tunable Sb-based VCSELs emitting at 2.3 µm,” IEEE Photon. Technol. Lett.17(10), 2020–2022 (2005). [CrossRef]
• J. Geng, C. Spiegelberg, and S. Jiang, “Narrow linewidth fiber laser for 100-km optical frequency domain reflectometry,” IEEE Photon. Technol. Lett.17(9), 1827–1829 (2005). [CrossRef]
• H. Lindberg, M. Strassner, J. Bengtsson, and A. Larsson, “InP-based optically pumped VECSEL operating CW at 1550 nm,” IEEE Photon. Technol. Lett.16(2), 362–364 (2004). [CrossRef]
• H. Lindberg, M. Strassner, J. Bengtsson, and A. Larsson, “High-power optically pumped 1550-nm VECSEL with a bonded silicon heat spreader,” IEEE Photon. Technol. Lett.16(5), 1233–1235 (2004). [CrossRef]
• J. Lyytikäinen, J. Rautiainen, A. Sirbu, V. Iakovlev, N. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. Okhotnikov, “High-power 1.48-µm wafer-fused optically pumped semiconductor disk laser,” IEEE Photon. Technol. Lett.23(13), 917–919 (2011). [CrossRef]

J. Lightwave Technol.

• L. B. Mercer, “1/f frequency noise effects on self-heterodyne linewidth measurements,” J. Lightwave Technol.9(4), 485–493 (1991). [CrossRef]
• C. Spiegelberg, J. Geng, Y. Hu, Y. Kaneda, S. Jiang, and N. Peyghambarian, “Low-noise narrow-linewidth fiber laser at 1550 nm,” J. Lightwave Technol.22(1), 57–62 (2004). [CrossRef]

J. Opt. Soc. Am. B

• A. Maclean, R. Birch, P. Roth, A. Kemp, and D. Burns, “Limits on efficiency and power scaling in semiconductor disk lasers with diamond heatspreaders,” J. Opt. Soc. Am. B26(12), 2228–2236 (2009). [CrossRef]

Laser Photon. Rev.

• S. Calvez, J. Hastie, M. Guina, O. Okhotnikov, and M. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev.3(5), 407–434 (2009). [CrossRef]
• N. Schulz, J. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev.2(3), 160–181 (2008). [CrossRef]

New J. Phys.

• M. Guina, T. Leinonen, A. Härkönen, and M. Pessa, “High-power disk lasers based on dilute nitride heterostructures,” New J. Phys.11(12), 125019 (2009). [CrossRef]

Opt. Commun.

• S. Viciani, M. Gabrysch, F. Marin, F. M. Sopra, M. Moser, and K. H. Gulden, “Lineshape of a vertical cavity surface emitting laser,” Opt. Commun.206(1), 89–97 (2002). [CrossRef]

Opt. Express

• A. Garnache, A. Ouvrard, and D. Romanini, “Single-frequency operation of external-cavity VCSELs: non-linear multimode temporal dynamics and quantum limit,” Opt. Express15(15), 9403–9417 (2007). [CrossRef] [PubMed]
• J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-microm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express17(11), 9047–9052 (2009). [CrossRef] [PubMed]
• R. Paschotta, “Beam quality deterioration of lasers caused by intracavity beam distortions,” Opt. Express14(13), 6069–6074 (2006). [CrossRef] [PubMed]
• J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. Okhotnikov, “2.6 W optically-pumped semiconductor disk laser operating at 1.57-µm using wafer fusion,” Opt. Express16(26), 21881–21886 (2008).
• A. Rantamäki, A. Sirbu, A. Mereuta, E. Kapon, and O. Okhotnikov, “3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser,” Opt. Express18(21), 21645–21650 (2010).
• A. Rantamäki, J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, E. Kapon, and O. G. Okhotnikov, “1 W at 785 nm from a frequency-doubled wafer-fused semiconductor disk laser,” Opt. Express20(8), 9046–9051 (2012). [CrossRef] [PubMed]
• S. Spießberger, M. Schiemangk, A. Sahm, A. Wicht, H. Wenzel, A. Peters, G. Erbert, and G. Tränkle, “Micro-integrated 1 Watt semiconductor laser system with a linewidth of 3.6 kHz,” Opt. Express19(8), 7077–7083 (2011). [CrossRef] [PubMed]
• A. Laurain, M. Myara, G. Beaudoin, I. Sagnes, and A. Garnache, “Multiwatt-power highly-coherent compact single-frequency tunable Vertical-External-Cavity-Surface-Emitting-Semiconductor-Laser,” Opt. Express18(14), 14627–14636 (2010). [CrossRef] [PubMed]
• R. Abram, K. Gardner, E. Riis, and A. Ferguson, “Narrow linewidth operation of a tunable optically pumped semiconductor laser,” Opt. Express12(22), 5434–5439 (2004). [CrossRef] [PubMed]

Opt. Lett.

• Y. Kaneda, M. Fallahi, J. Hader, J. V. Moloney, S. W. Koch, B. Kunert, and W. Stoltz, “Continuous-wave single-frequency 295 nm laser source by a frequency-quadrupled optically pumped semiconductor laser,” Opt. Lett.34(22), 3511–3513 (2009). [CrossRef] [PubMed]
• B. Rösener, S. Kaspar, M. Rattunde, T. Töpper, C. Manz, K. Köhler, O. Ambacher, and J. Wagner, “2 μm semiconductor disk laser with a heterodyne linewidth below 10 kHz,” Opt. Lett.36(18), 3587–3589 (2011). [CrossRef] [PubMed]
• H. Lindberg, A. Larsson, and M. Strassner, “Single-frequency operation of a high-power, long-wavelength semiconductor disk laser,” Opt. Lett.30(17), 2260–2262 (2005). [CrossRef] [PubMed]

Proc. SPIE

• A. Laurain, L. Cerutti, M. Myara, and A. Garnache, “2.7 µm single-frequency TEM00 operation of Sb-based diode-pumped external-cavity VCSEL,” Proc. SPIE8242, 82420 L –82421 (2012).
• F. Camargo, S. Janicot, I. Sagnes, A. Garnache, P. Georges, and G. Lucas-Leclin, “Evaluation of the single-frequency operation of a short vertical external-cavity semiconductor laser at 852 nm,” Proc. SPIE8242, 82420F (2012). [CrossRef]
• A. Garnache, A. Ouvrard, L. Cerutti, D. Barat, A. Vicet, F. Genty, Y. Rouillard, D. Romanini, and E. Cerda-Mendez, “2–2.7 µm single frequency tunable Sb-based lasers operating in CW at RT: Microcavity and External–cavity VCSELs, DFB,” Proc. SPIE6184, 61840N, 61840N-15 (2006). [CrossRef]

Other

• O. Okhotnikov, “Semiconductor disk lasers,” in Physics and Technology (Wiley-VCH, 2010).
• A. Garnache, M. Myara, A. Laurain, A. Bouchier, J. Perez, P. Signoret, I. Sagnes, and D. Romanini, “Single frequency free-running low noise compact extended-cavity semiconductor laser at high power level,” Proc. Int. Conf. Space Opt. S17, 257–258 (2008). http://www.congrexprojects.com/icso/2008-proceedings-ppts .

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