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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 21 — Oct. 21, 2013
  • pp: 25373–25380

Size-controllable nanopyramids photonic crystal selectively grown on p-GaN for enhanced light-extraction of light-emitting diodes

Chengxiao Du, Tongbo Wei, Haiyang Zheng, Liancheng Wang, Chong Geng, Qingfeng Yan, Junxi Wang, and Jinmin Li  »View Author Affiliations


Optics Express, Vol. 21, Issue 21, pp. 25373-25380 (2013)
http://dx.doi.org/10.1364/OE.21.025373


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Abstract

Size-controllable p-GaN hexagonal nanopyramids (HnPs)-photonic crystal (PhC) structures were selectively grown on flat p-GaN layer for the elimination of total internal reflection of light-emitting diodes (LEDs). The LEDs with HnPs-PhC of 46.3% bottom fill factor (PhC lattice constant is 730 nm) showed an improved light output power by 99.9% at forward current of 350 mA compared to the reference LEDs with flat p-GaN layer. We confirmed the effect of HnPs-PhC with different bottom fill factors and the effect of nanopyramid-shaped and nanocolumn-shaped PhC on the light-extraction of LEDs was also investigated by using three-dimensional finite-difference time-domain simulations.

© 2013 Optical Society of America

OCIS Codes
(230.0250) Optical devices : Optoelectronics
(230.3670) Optical devices : Light-emitting diodes
(220.4241) Optical design and fabrication : Nanostructure fabrication
(230.5298) Optical devices : Photonic crystals

ToC Category:
Optical Devices

History
Original Manuscript: June 21, 2013
Revised Manuscript: September 28, 2013
Manuscript Accepted: October 7, 2013
Published: October 17, 2013

Citation
Chengxiao Du, Tongbo Wei, Haiyang Zheng, Liancheng Wang, Chong Geng, Qingfeng Yan, Junxi Wang, and Jinmin Li, "Size-controllable nanopyramids photonic crystal selectively grown on p-GaN for enhanced light-extraction of light-emitting diodes," Opt. Express 21, 25373-25380 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-21-25373


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