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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 22 — Nov. 4, 2013
  • pp: 25780–25787

Linear array of InAs APDs operating at 2 µm

Ian C. Sandall, Shiyong Zhang, and Chee Hing Tan  »View Author Affiliations

Optics Express, Vol. 21, Issue 22, pp. 25780-25787 (2013)

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A linear array of avalanche photodiodes (APDs) comprising of 128 pixels was fabricated from InAs. The uniformity of the dark currents and avalanche gain was investigated at 77, 200 K and room temperature. The array shows highly uniform results apart from some defective pixels at the edge of the arrays. At 200 K and at a wavelength of 2.04 µm, we obtained an unmultiplied responsivity of 0.61 A/W at 0 V, along with a gain of 8.5 at a bias of 10 V.

© 2013 Optical Society of America

OCIS Codes
(040.1240) Detectors : Arrays
(040.1345) Detectors : Avalanche photodiodes (APDs)
(040.6808) Detectors : Thermal (uncooled) IR detectors, arrays and imaging
(250.0040) Optoelectronics : Detectors

ToC Category:

Original Manuscript: July 5, 2013
Revised Manuscript: October 8, 2013
Manuscript Accepted: October 14, 2013
Published: October 22, 2013

Ian C. Sandall, Shiyong Zhang, and Chee Hing Tan, "Linear array of InAs APDs operating at 2 µm," Opt. Express 21, 25780-25787 (2013)

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