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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 22 — Nov. 4, 2013
  • pp: 26475–26482

Temperature dependence of Raman scattering in bulk 4H-SiC with different carrier concentration

Hua Yang Sun, Siou-Cheng Lien, Zhi Ren Qiu, Hong Chao Wang, Ting Mei, Chee Wee Liu, and Zhe Chuan Feng  »View Author Affiliations

Optics Express, Vol. 21, Issue 22, pp. 26475-26482 (2013)

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Raman spectra of three bulk 4H-SiC wafers with different free carrier concentration were measured at temperature from 80 K to 873 K. As temperature increases, Raman peaks of most optical phonon modes show monotonous down shift. An anomalous non-monotonous variation with temperature, was observed in the A1 longitudinal optical (LO) mode from doped samples. Two methods of theoretical fitting, one-mode (LO-plasma coupled (LOPC) mode) and two-mode (A1(LO) + LOPC) fitting, are employed to analyze this anomalous phenomenon. Theoretical simulations for temperature dependent Raman spectra by using two methods are critically examined. It turns out that one-mode method conforms well the experimental results, while two-mode method is untenable in physics. The non-monotonous variation of blue-red shifts with temperature for LOPC mode from doped 4H-SiC could be explained by the influence from ionization process of impurities on the process of Raman scattering. A quantitative description on temperature dependent Raman spectra for doped 4H-SiC is achieved, which matches well to experimental data.

© 2013 Optical Society of America

OCIS Codes
(160.6000) Materials : Semiconductor materials
(290.5860) Scattering : Scattering, Raman

ToC Category:

Original Manuscript: August 2, 2013
Revised Manuscript: September 28, 2013
Manuscript Accepted: October 8, 2013
Published: October 28, 2013

Hua Yang Sun, Siou-Cheng Lien, Zhi Ren Qiu, Hong Chao Wang, Ting Mei, Chee Wee Liu, and Zhe Chuan Feng, "Temperature dependence of Raman scattering in bulk 4H-SiC with different carrier concentration," Opt. Express 21, 26475-26482 (2013)

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