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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 3 — Feb. 11, 2013
  • pp: 3133–3137

A 340-nm-band ultraviolet laser diode composed of GaN well layers

Yoji Yamashita, Masakazu Kuwabara, Kousuke Torii, and Harumasa Yoshida  »View Author Affiliations


Optics Express, Vol. 21, Issue 3, pp. 3133-3137 (2013)
http://dx.doi.org/10.1364/OE.21.003133


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Abstract

We have demonstrated the laser operation of a short-wavelength ultraviolet laser diode with multiple-quantum-wells composed of GaN well layers. The laser action has been achieved in 340-nm-band far from the wavelength corresponding to GaN band gap under the pulsed current mode at room temperature. The device has been realized on the Al0.2Ga0.8N underlying layer. The AlN mole fraction of the underlying layer is 0.1 lower than that of the underlying layer which was used for the previously reported 342 nm laser diode. These results provide a chance to the next step for a shorter-wavelength ultraviolet laser diode.

© 2013 OSA

OCIS Codes
(140.3610) Lasers and laser optics : Lasers, ultraviolet
(140.5960) Lasers and laser optics : Semiconductor lasers
(230.5590) Optical devices : Quantum-well, -wire and -dot devices

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: September 27, 2012
Revised Manuscript: December 14, 2012
Manuscript Accepted: December 19, 2012
Published: February 1, 2013

Citation
Yoji Yamashita, Masakazu Kuwabara, Kousuke Torii, and Harumasa Yoshida, "A 340-nm-band ultraviolet laser diode composed of GaN well layers," Opt. Express 21, 3133-3137 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-3-3133


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