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Localized surface plasmon-enhanced near-ultraviolet emission from InGaN/GaN light-emitting diodes using silver and platinum nanoparticlesSang-Hyun Hong, Chu-Young Cho, Sang-Jun Lee, Sang-Youp Yim, Wantae Lim, Sung-Tae Kim, and Seong-Ju Park »View Author Affiliations
Sang-Hyun Hong,1
Chu-Young Cho,2
Sang-Jun Lee,2
Sang-Youp Yim,3
Wantae Lim,4
Sung-Tae Kim,4
and Seong-Ju Park1,2,*
1Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712, South Korea 2School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, South Korea 3Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, Gwangju 500-712, South Korea 4Samsung Electronics Co. LTD., Suwon 443-742, South Korea *Corresponding author: sjpark@gist.ac.kr |
Optics Express, Vol. 21, Issue 3, pp. 3138-3144 (2013)
http://dx.doi.org/10.1364/OE.21.003138
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Abstract
We demonstrate localized surface plasmon (LSP)-enhanced near-ultraviolet light-emitting diodes (NUV-LEDs) using silver (Ag) and platinum (Pt) nanoparticles (NPs). The optical output power of NUV-LEDs with metal NPs is higher by 20.1% for NUV-LEDs with Ag NPs and 57.9% for NUV-LEDs with Pt NPs at 20 mA than that of NUV-LEDs without metal NPs. The time-resolved photoluminescence (TR-PL) spectra shows that the decay times of NUV-LEDs with Ag and Pt NPs are faster than that of NUV-LEDs without metal NPs. The TR-PL and absorbance spectra of metal NPs indicate that the spontaneous emission rate is increased by resonance coupling between excitons in the multiple quantum wells and LSPs in the metal NPs.
© 2013 OSA
OCIS Codes
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes
(240.6680) Optics at surfaces : Surface plasmons
ToC Category:
Optical Devices
History
Original Manuscript: August 2, 2012
Revised Manuscript: December 28, 2012
Manuscript Accepted: January 25, 2013
Published: February 1, 2013
Citation
Sang-Hyun Hong, Chu-Young Cho, Sang-Jun Lee, Sang-Youp Yim, Wantae Lim, Sung-Tae Kim, and Seong-Ju Park, "Localized surface plasmon-enhanced near-ultraviolet emission from InGaN/GaN light-emitting diodes using silver and platinum nanoparticles," Opt. Express 21, 3138-3144 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-3-3138
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References
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- C. Y. Cho, S. J. Lee, J. H. Song, S. H. Hong, S. M. Lee, Y. H. Cho, and S. J. Park, “Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles,” Appl. Phys. Lett.98(5), 051106 (2011). [CrossRef]
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- A. Neogi, C. W. Lee, H. O. Everitt, T. Kuroda, A. Tackeuchi, and E. Yablonovitch, “Enhancement of spontaneous recombination rate in a quantum well by resonant surface plasmon coupling,” Phys. Rev. B66(15), 153305 (2002). [CrossRef]
- Y. Narukawa, S. Saijou, Y. Kawakami, S. Fujita, T. Mukai, and S. Nakamura, “Radiative and nonradiative recombination processes in ultraviolet light-emitting diode composed of In0.02Ga0.98N active layer,” Appl. Phys. Lett.74(4), 558–560 (1999). [CrossRef]
- T. Kawashima, H. Yoshikawa, S. Adach, S. Fuke, and K. Ohtsuka, “Optical properties of hexagonal GaN,” J. Appl. Phys.82(7), 3528 (1997). [CrossRef]
- P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature406(6798), 865–868 (2000). [CrossRef] [PubMed]
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- C. Y. Cho, S. J. Lee, J. H. Song, S. H. Hong, S. M. Lee, Y. H. Cho, and S. J. Park, “Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles,” Appl. Phys. Lett.98(5), 051106 (2011). [CrossRef]
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- S. C. Huang, K. C. Shen, D. S. Wuu, P. M. Tu, H. C. Kuo, C. C. Tu, and R. H. Horng, “Study of 375nm ultraviolet InGaN/AlGaN light-emitting diodes with heavily Si-doped GaN transition layer in growth mode, internal quantum efficiency, and device performance,” J. Appl. Phys.110(12), 123102 (2011). [CrossRef]
- T. S. Oh, H. Jeong, Y. S. Lee, J. D. Kim, T. H. Seo, H. Kim, A. H. Park, K. J. Lee, and E. K. Suh, “Coupling of InGaN/GaN multiquantum-wells photoluminescence to surface plasmons in platinum nanocluster,” Appl. Phys. Lett.95(11), 111112 (2009). [CrossRef]
- C. Y. Cho, M. K. Kwon, S. J. Lee, S. H. Han, J. W. Kang, S. E. Kang, D. Y. Lee, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes using silver nanoparticles embedded in p-GaN,” Nanotechnology21(20), 205201 (2010). [CrossRef] [PubMed]
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- C. Langhammer, Z. Yuan, I. Zorić, and B. Kasemo, “Plasmonic properties of supported Pt and Pd nanostructures,” Nano Lett.6(4), 833–838 (2006). [CrossRef] [PubMed]
- M. Kunzer, U. Kaufmann, K. Kohler, C. C. Leancu, S. Liu, and J. Wagner, “Near-UV to violet LEDs - wavelength dependence of efficiency limiting processes,” Phys. Status Solidi4(7), 2822–2825 (2007) (c). [CrossRef]
- K. Okamoto, I. Niki, A. Scherer, Y. Narukawa, T. Mukai, and Y. Kawakami, “Surface plasmon enhanced spontaneous emission rate of InGaN/GaN quantum wells probed by time-resolved photoluminescence spectroscopy,” Appl. Phys. Lett.87(7), 071102 (2005). [CrossRef]
- Y. Narukawa, S. Saijou, Y. Kawakami, S. Fujita, T. Mukai, and S. Nakamura, “Radiative and nonradiative recombination processes in ultraviolet light-emitting diode composed of In0.02Ga0.98N active layer,” Appl. Phys. Lett.74(4), 558–560 (1999). [CrossRef]
- T. Kawashima, H. Yoshikawa, S. Adach, S. Fuke, and K. Ohtsuka, “Optical properties of hexagonal GaN,” J. Appl. Phys.82(7), 3528 (1997). [CrossRef]
- C. H. Wang, C. C. Ke, C. H. Chiu, J. C. Li, H. C. Kuo, T. C. Lu, and S. C. Wang, “Study of the internal quantum efficiency of InGaN/GaN UV LEDs on patterned sapphire substrate using the electroluminescence method,” J. Cryst. Growth315(1), 242–245 (2011). [CrossRef]
- M. K. Kwon, J. Y. Kim, B. H. Kim, I. K. Park, C. Y. Cho, C. C. Byeon, and S. J. Park, “Surface-plasmon-enhanced light-emitting diodes,” Adv. Mater. (Deerfield Beach Fla.)20(7), 1253–1257 (2008). [CrossRef]
- T. S. Oh, H. Jeong, Y. S. Lee, J. D. Kim, T. H. Seo, H. Kim, A. H. Park, K. J. Lee, and E. K. Suh, “Coupling of InGaN/GaN multiquantum-wells photoluminescence to surface plasmons in platinum nanocluster,” Appl. Phys. Lett.95(11), 111112 (2009). [CrossRef]
- T. S. Oh, H. Jeong, Y. S. Lee, J. D. Kim, T. H. Seo, H. Kim, A. H. Park, K. J. Lee, and E. K. Suh, “Coupling of InGaN/GaN multiquantum-wells photoluminescence to surface plasmons in platinum nanocluster,” Appl. Phys. Lett.95(11), 111112 (2009). [CrossRef]
- M. K. Kwon, J. Y. Kim, B. H. Kim, I. K. Park, C. Y. Cho, C. C. Byeon, and S. J. Park, “Surface-plasmon-enhanced light-emitting diodes,” Adv. Mater. (Deerfield Beach Fla.)20(7), 1253–1257 (2008). [CrossRef]
- T. Nishida, H. Saito, and N. Kobayashi, “Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN,” Appl. Phys. Lett.79(6), 711–712 (2001). [CrossRef]
- M. Kunzer, U. Kaufmann, K. Kohler, C. C. Leancu, S. Liu, and J. Wagner, “Near-UV to violet LEDs - wavelength dependence of efficiency limiting processes,” Phys. Status Solidi4(7), 2822–2825 (2007) (c). [CrossRef]
- S. Watanabe, N. Yamada, M. Nagashima, Y. Ueki, C. Sasaki, Y. Yamada, T. Taguchi, K. Tadatomo, H. Okagawa, and H. Kudo, “Internal quantum efficiency of highly-efficient InxGa1-xN-based near-ultraviolet light-emitting diodes,” Appl. Phys. Lett.83(24), 4906–4908 (2003). [CrossRef]
- M. Kunzer, U. Kaufmann, K. Kohler, C. C. Leancu, S. Liu, and J. Wagner, “Near-UV to violet LEDs - wavelength dependence of efficiency limiting processes,” Phys. Status Solidi4(7), 2822–2825 (2007) (c). [CrossRef]
- S. C. Huang, K. C. Shen, D. S. Wuu, P. M. Tu, H. C. Kuo, C. C. Tu, and R. H. Horng, “Study of 375nm ultraviolet InGaN/AlGaN light-emitting diodes with heavily Si-doped GaN transition layer in growth mode, internal quantum efficiency, and device performance,” J. Appl. Phys.110(12), 123102 (2011). [CrossRef]
- C. H. Wang, C. C. Ke, C. H. Chiu, J. C. Li, H. C. Kuo, T. C. Lu, and S. C. Wang, “Study of the internal quantum efficiency of InGaN/GaN UV LEDs on patterned sapphire substrate using the electroluminescence method,” J. Cryst. Growth315(1), 242–245 (2011). [CrossRef]
- A. Neogi, C. W. Lee, H. O. Everitt, T. Kuroda, A. Tackeuchi, and E. Yablonovitch, “Enhancement of spontaneous recombination rate in a quantum well by resonant surface plasmon coupling,” Phys. Rev. B66(15), 153305 (2002). [CrossRef]
- C. Y. Cho, M. K. Kwon, S. J. Lee, S. H. Han, J. W. Kang, S. E. Kang, D. Y. Lee, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes using silver nanoparticles embedded in p-GaN,” Nanotechnology21(20), 205201 (2010). [CrossRef] [PubMed]
- M. K. Kwon, J. Y. Kim, B. H. Kim, I. K. Park, C. Y. Cho, C. C. Byeon, and S. J. Park, “Surface-plasmon-enhanced light-emitting diodes,” Adv. Mater. (Deerfield Beach Fla.)20(7), 1253–1257 (2008). [CrossRef]
- C. Langhammer, Z. Yuan, I. Zorić, and B. Kasemo, “Plasmonic properties of supported Pt and Pd nanostructures,” Nano Lett.6(4), 833–838 (2006). [CrossRef] [PubMed]
- M. Kunzer, U. Kaufmann, K. Kohler, C. C. Leancu, S. Liu, and J. Wagner, “Near-UV to violet LEDs - wavelength dependence of efficiency limiting processes,” Phys. Status Solidi4(7), 2822–2825 (2007) (c). [CrossRef]
- A. Neogi, C. W. Lee, H. O. Everitt, T. Kuroda, A. Tackeuchi, and E. Yablonovitch, “Enhancement of spontaneous recombination rate in a quantum well by resonant surface plasmon coupling,” Phys. Rev. B66(15), 153305 (2002). [CrossRef]
- C. Y. Cho, M. K. Kwon, S. J. Lee, S. H. Han, J. W. Kang, S. E. Kang, D. Y. Lee, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes using silver nanoparticles embedded in p-GaN,” Nanotechnology21(20), 205201 (2010). [CrossRef] [PubMed]
- T. S. Oh, H. Jeong, Y. S. Lee, J. D. Kim, T. H. Seo, H. Kim, A. H. Park, K. J. Lee, and E. K. Suh, “Coupling of InGaN/GaN multiquantum-wells photoluminescence to surface plasmons in platinum nanocluster,” Appl. Phys. Lett.95(11), 111112 (2009). [CrossRef]
- L. W. Jang, D. W. Jeon, T. Sahoo, D. S. Jo, J. W. Ju, S. J. Lee, J. H. Baek, J. K. Yang, J. H. Song, A. Y. Polyakov, and I. H. Lee, “Localized surface plasmon enhanced quantum efficiency of InGaN/GaN quantum wells by Ag/SiO2 nanoparticles,” Opt. Express20(3), 2116–2123 (2012). [CrossRef] [PubMed]
- C. Y. Cho, S. J. Lee, J. H. Song, S. H. Hong, S. M. Lee, Y. H. Cho, and S. J. Park, “Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles,” Appl. Phys. Lett.98(5), 051106 (2011). [CrossRef]
- C. Y. Cho, M. K. Kwon, S. J. Lee, S. H. Han, J. W. Kang, S. E. Kang, D. Y. Lee, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes using silver nanoparticles embedded in p-GaN,” Nanotechnology21(20), 205201 (2010). [CrossRef] [PubMed]
- C. Y. Cho, S. J. Lee, J. H. Song, S. H. Hong, S. M. Lee, Y. H. Cho, and S. J. Park, “Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles,” Appl. Phys. Lett.98(5), 051106 (2011). [CrossRef]
- T. Wang, Y. H. Lee, J. P. Ao, J. Bai, and S. Sakai, “1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate,” Appl. Phys. Lett.81(14), 2508–2510 (2002). [CrossRef]
- T. S. Oh, H. Jeong, Y. S. Lee, J. D. Kim, T. H. Seo, H. Kim, A. H. Park, K. J. Lee, and E. K. Suh, “Coupling of InGaN/GaN multiquantum-wells photoluminescence to surface plasmons in platinum nanocluster,” Appl. Phys. Lett.95(11), 111112 (2009). [CrossRef]
- C. H. Wang, C. C. Ke, C. H. Chiu, J. C. Li, H. C. Kuo, T. C. Lu, and S. C. Wang, “Study of the internal quantum efficiency of InGaN/GaN UV LEDs on patterned sapphire substrate using the electroluminescence method,” J. Cryst. Growth315(1), 242–245 (2011). [CrossRef]
- M. Kunzer, U. Kaufmann, K. Kohler, C. C. Leancu, S. Liu, and J. Wagner, “Near-UV to violet LEDs - wavelength dependence of efficiency limiting processes,” Phys. Status Solidi4(7), 2822–2825 (2007) (c). [CrossRef]
- C. H. Wang, C. C. Ke, C. H. Chiu, J. C. Li, H. C. Kuo, T. C. Lu, and S. C. Wang, “Study of the internal quantum efficiency of InGaN/GaN UV LEDs on patterned sapphire substrate using the electroluminescence method,” J. Cryst. Growth315(1), 242–245 (2011). [CrossRef]
- P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature406(6798), 865–868 (2000). [CrossRef] [PubMed]
- T. Mukai, D. Morita, and S. Nakamura, “High-power UV InGaN/AlGaN double-heterostructure LEDs,” J. Cryst. Growth189/190(158), 778–781 (1998). [CrossRef]
- K. Okamoto, I. Niki, A. Scherer, Y. Narukawa, T. Mukai, and Y. Kawakami, “Surface plasmon enhanced spontaneous emission rate of InGaN/GaN quantum wells probed by time-resolved photoluminescence spectroscopy,” Appl. Phys. Lett.87(7), 071102 (2005). [CrossRef]
- K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, “Surface-plasmon-enhanced light emitters based on InGaN quantum wells,” Nat. Mater.3(9), 601–605 (2004). [CrossRef] [PubMed]
- Y. Narukawa, S. Saijou, Y. Kawakami, S. Fujita, T. Mukai, and S. Nakamura, “Radiative and nonradiative recombination processes in ultraviolet light-emitting diode composed of In0.02Ga0.98N active layer,” Appl. Phys. Lett.74(4), 558–560 (1999). [CrossRef]
- T. Mukai, D. Morita, and S. Nakamura, “High-power UV InGaN/AlGaN double-heterostructure LEDs,” J. Cryst. Growth189/190(158), 778–781 (1998). [CrossRef]
- S. Watanabe, N. Yamada, M. Nagashima, Y. Ueki, C. Sasaki, Y. Yamada, T. Taguchi, K. Tadatomo, H. Okagawa, and H. Kudo, “Internal quantum efficiency of highly-efficient InxGa1-xN-based near-ultraviolet light-emitting diodes,” Appl. Phys. Lett.83(24), 4906–4908 (2003). [CrossRef]
- Y. Narukawa, S. Saijou, Y. Kawakami, S. Fujita, T. Mukai, and S. Nakamura, “Radiative and nonradiative recombination processes in ultraviolet light-emitting diode composed of In0.02Ga0.98N active layer,” Appl. Phys. Lett.74(4), 558–560 (1999). [CrossRef]
- T. Mukai, D. Morita, and S. Nakamura, “High-power UV InGaN/AlGaN double-heterostructure LEDs,” J. Cryst. Growth189/190(158), 778–781 (1998). [CrossRef]
- K. Okamoto, I. Niki, A. Scherer, Y. Narukawa, T. Mukai, and Y. Kawakami, “Surface plasmon enhanced spontaneous emission rate of InGaN/GaN quantum wells probed by time-resolved photoluminescence spectroscopy,” Appl. Phys. Lett.87(7), 071102 (2005). [CrossRef]
- K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, “Surface-plasmon-enhanced light emitters based on InGaN quantum wells,” Nat. Mater.3(9), 601–605 (2004). [CrossRef] [PubMed]
- Y. Narukawa, S. Saijou, Y. Kawakami, S. Fujita, T. Mukai, and S. Nakamura, “Radiative and nonradiative recombination processes in ultraviolet light-emitting diode composed of In0.02Ga0.98N active layer,” Appl. Phys. Lett.74(4), 558–560 (1999). [CrossRef]
- A. Neogi, C. W. Lee, H. O. Everitt, T. Kuroda, A. Tackeuchi, and E. Yablonovitch, “Enhancement of spontaneous recombination rate in a quantum well by resonant surface plasmon coupling,” Phys. Rev. B66(15), 153305 (2002). [CrossRef]
- K. Okamoto, I. Niki, A. Scherer, Y. Narukawa, T. Mukai, and Y. Kawakami, “Surface plasmon enhanced spontaneous emission rate of InGaN/GaN quantum wells probed by time-resolved photoluminescence spectroscopy,” Appl. Phys. Lett.87(7), 071102 (2005). [CrossRef]
- K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, “Surface-plasmon-enhanced light emitters based on InGaN quantum wells,” Nat. Mater.3(9), 601–605 (2004). [CrossRef] [PubMed]
- T. Nishida, H. Saito, and N. Kobayashi, “Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN,” Appl. Phys. Lett.79(6), 711–712 (2001). [CrossRef]
- T. S. Oh, H. Jeong, Y. S. Lee, J. D. Kim, T. H. Seo, H. Kim, A. H. Park, K. J. Lee, and E. K. Suh, “Coupling of InGaN/GaN multiquantum-wells photoluminescence to surface plasmons in platinum nanocluster,” Appl. Phys. Lett.95(11), 111112 (2009). [CrossRef]
- T. Kawashima, H. Yoshikawa, S. Adach, S. Fuke, and K. Ohtsuka, “Optical properties of hexagonal GaN,” J. Appl. Phys.82(7), 3528 (1997). [CrossRef]
- S. Watanabe, N. Yamada, M. Nagashima, Y. Ueki, C. Sasaki, Y. Yamada, T. Taguchi, K. Tadatomo, H. Okagawa, and H. Kudo, “Internal quantum efficiency of highly-efficient InxGa1-xN-based near-ultraviolet light-emitting diodes,” Appl. Phys. Lett.83(24), 4906–4908 (2003). [CrossRef]
- K. Okamoto, I. Niki, A. Scherer, Y. Narukawa, T. Mukai, and Y. Kawakami, “Surface plasmon enhanced spontaneous emission rate of InGaN/GaN quantum wells probed by time-resolved photoluminescence spectroscopy,” Appl. Phys. Lett.87(7), 071102 (2005). [CrossRef]
- K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, “Surface-plasmon-enhanced light emitters based on InGaN quantum wells,” Nat. Mater.3(9), 601–605 (2004). [CrossRef] [PubMed]
- T. S. Oh, H. Jeong, Y. S. Lee, J. D. Kim, T. H. Seo, H. Kim, A. H. Park, K. J. Lee, and E. K. Suh, “Coupling of InGaN/GaN multiquantum-wells photoluminescence to surface plasmons in platinum nanocluster,” Appl. Phys. Lett.95(11), 111112 (2009). [CrossRef]
- M. K. Kwon, J. Y. Kim, B. H. Kim, I. K. Park, C. Y. Cho, C. C. Byeon, and S. J. Park, “Surface-plasmon-enhanced light-emitting diodes,” Adv. Mater. (Deerfield Beach Fla.)20(7), 1253–1257 (2008). [CrossRef]
- C. Y. Cho, S. J. Lee, J. H. Song, S. H. Hong, S. M. Lee, Y. H. Cho, and S. J. Park, “Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles,” Appl. Phys. Lett.98(5), 051106 (2011). [CrossRef]
- C. Y. Cho, M. K. Kwon, S. J. Lee, S. H. Han, J. W. Kang, S. E. Kang, D. Y. Lee, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes using silver nanoparticles embedded in p-GaN,” Nanotechnology21(20), 205201 (2010). [CrossRef] [PubMed]
- M. K. Kwon, J. Y. Kim, B. H. Kim, I. K. Park, C. Y. Cho, C. C. Byeon, and S. J. Park, “Surface-plasmon-enhanced light-emitting diodes,” Adv. Mater. (Deerfield Beach Fla.)20(7), 1253–1257 (2008). [CrossRef]
- P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature406(6798), 865–868 (2000). [CrossRef] [PubMed]
- P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature406(6798), 865–868 (2000). [CrossRef] [PubMed]
- P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature406(6798), 865–868 (2000). [CrossRef] [PubMed]
- Y. Narukawa, S. Saijou, Y. Kawakami, S. Fujita, T. Mukai, and S. Nakamura, “Radiative and nonradiative recombination processes in ultraviolet light-emitting diode composed of In0.02Ga0.98N active layer,” Appl. Phys. Lett.74(4), 558–560 (1999). [CrossRef]
- T. Nishida, H. Saito, and N. Kobayashi, “Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN,” Appl. Phys. Lett.79(6), 711–712 (2001). [CrossRef]
- T. Wang, Y. H. Lee, J. P. Ao, J. Bai, and S. Sakai, “1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate,” Appl. Phys. Lett.81(14), 2508–2510 (2002). [CrossRef]
- S. Watanabe, N. Yamada, M. Nagashima, Y. Ueki, C. Sasaki, Y. Yamada, T. Taguchi, K. Tadatomo, H. Okagawa, and H. Kudo, “Internal quantum efficiency of highly-efficient InxGa1-xN-based near-ultraviolet light-emitting diodes,” Appl. Phys. Lett.83(24), 4906–4908 (2003). [CrossRef]
- K. Okamoto, I. Niki, A. Scherer, Y. Narukawa, T. Mukai, and Y. Kawakami, “Surface plasmon enhanced spontaneous emission rate of InGaN/GaN quantum wells probed by time-resolved photoluminescence spectroscopy,” Appl. Phys. Lett.87(7), 071102 (2005). [CrossRef]
- K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, “Surface-plasmon-enhanced light emitters based on InGaN quantum wells,” Nat. Mater.3(9), 601–605 (2004). [CrossRef] [PubMed]
- T. S. Oh, H. Jeong, Y. S. Lee, J. D. Kim, T. H. Seo, H. Kim, A. H. Park, K. J. Lee, and E. K. Suh, “Coupling of InGaN/GaN multiquantum-wells photoluminescence to surface plasmons in platinum nanocluster,” Appl. Phys. Lett.95(11), 111112 (2009). [CrossRef]
- S. C. Huang, K. C. Shen, D. S. Wuu, P. M. Tu, H. C. Kuo, C. C. Tu, and R. H. Horng, “Study of 375nm ultraviolet InGaN/AlGaN light-emitting diodes with heavily Si-doped GaN transition layer in growth mode, internal quantum efficiency, and device performance,” J. Appl. Phys.110(12), 123102 (2011). [CrossRef]
- K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, “Surface-plasmon-enhanced light emitters based on InGaN quantum wells,” Nat. Mater.3(9), 601–605 (2004). [CrossRef] [PubMed]
- L. W. Jang, D. W. Jeon, T. Sahoo, D. S. Jo, J. W. Ju, S. J. Lee, J. H. Baek, J. K. Yang, J. H. Song, A. Y. Polyakov, and I. H. Lee, “Localized surface plasmon enhanced quantum efficiency of InGaN/GaN quantum wells by Ag/SiO2 nanoparticles,” Opt. Express20(3), 2116–2123 (2012). [CrossRef] [PubMed]
- C. Y. Cho, S. J. Lee, J. H. Song, S. H. Hong, S. M. Lee, Y. H. Cho, and S. J. Park, “Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles,” Appl. Phys. Lett.98(5), 051106 (2011). [CrossRef]
- T. S. Oh, H. Jeong, Y. S. Lee, J. D. Kim, T. H. Seo, H. Kim, A. H. Park, K. J. Lee, and E. K. Suh, “Coupling of InGaN/GaN multiquantum-wells photoluminescence to surface plasmons in platinum nanocluster,” Appl. Phys. Lett.95(11), 111112 (2009). [CrossRef]
- A. Neogi, C. W. Lee, H. O. Everitt, T. Kuroda, A. Tackeuchi, and E. Yablonovitch, “Enhancement of spontaneous recombination rate in a quantum well by resonant surface plasmon coupling,” Phys. Rev. B66(15), 153305 (2002). [CrossRef]
- S. Watanabe, N. Yamada, M. Nagashima, Y. Ueki, C. Sasaki, Y. Yamada, T. Taguchi, K. Tadatomo, H. Okagawa, and H. Kudo, “Internal quantum efficiency of highly-efficient InxGa1-xN-based near-ultraviolet light-emitting diodes,” Appl. Phys. Lett.83(24), 4906–4908 (2003). [CrossRef]
- Y. Uchida and T. Taguchi, “Lighting theory and luminous characteristics of white light-emitting diodes,” Opt. Eng.44(12), 124003 (2005). [CrossRef]
- S. Watanabe, N. Yamada, M. Nagashima, Y. Ueki, C. Sasaki, Y. Yamada, T. Taguchi, K. Tadatomo, H. Okagawa, and H. Kudo, “Internal quantum efficiency of highly-efficient InxGa1-xN-based near-ultraviolet light-emitting diodes,” Appl. Phys. Lett.83(24), 4906–4908 (2003). [CrossRef]
- P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature406(6798), 865–868 (2000). [CrossRef] [PubMed]
- S. C. Huang, K. C. Shen, D. S. Wuu, P. M. Tu, H. C. Kuo, C. C. Tu, and R. H. Horng, “Study of 375nm ultraviolet InGaN/AlGaN light-emitting diodes with heavily Si-doped GaN transition layer in growth mode, internal quantum efficiency, and device performance,” J. Appl. Phys.110(12), 123102 (2011). [CrossRef]
- S. C. Huang, K. C. Shen, D. S. Wuu, P. M. Tu, H. C. Kuo, C. C. Tu, and R. H. Horng, “Study of 375nm ultraviolet InGaN/AlGaN light-emitting diodes with heavily Si-doped GaN transition layer in growth mode, internal quantum efficiency, and device performance,” J. Appl. Phys.110(12), 123102 (2011). [CrossRef]
- Y. Uchida and T. Taguchi, “Lighting theory and luminous characteristics of white light-emitting diodes,” Opt. Eng.44(12), 124003 (2005). [CrossRef]
- S. Watanabe, N. Yamada, M. Nagashima, Y. Ueki, C. Sasaki, Y. Yamada, T. Taguchi, K. Tadatomo, H. Okagawa, and H. Kudo, “Internal quantum efficiency of highly-efficient InxGa1-xN-based near-ultraviolet light-emitting diodes,” Appl. Phys. Lett.83(24), 4906–4908 (2003). [CrossRef]
- M. Kunzer, U. Kaufmann, K. Kohler, C. C. Leancu, S. Liu, and J. Wagner, “Near-UV to violet LEDs - wavelength dependence of efficiency limiting processes,” Phys. Status Solidi4(7), 2822–2825 (2007) (c). [CrossRef]
- P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature406(6798), 865–868 (2000). [CrossRef] [PubMed]
- C. H. Wang, C. C. Ke, C. H. Chiu, J. C. Li, H. C. Kuo, T. C. Lu, and S. C. Wang, “Study of the internal quantum efficiency of InGaN/GaN UV LEDs on patterned sapphire substrate using the electroluminescence method,” J. Cryst. Growth315(1), 242–245 (2011). [CrossRef]
- C. H. Wang, C. C. Ke, C. H. Chiu, J. C. Li, H. C. Kuo, T. C. Lu, and S. C. Wang, “Study of the internal quantum efficiency of InGaN/GaN UV LEDs on patterned sapphire substrate using the electroluminescence method,” J. Cryst. Growth315(1), 242–245 (2011). [CrossRef]
- T. Wang, Y. H. Lee, J. P. Ao, J. Bai, and S. Sakai, “1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate,” Appl. Phys. Lett.81(14), 2508–2510 (2002). [CrossRef]
- S. Watanabe, N. Yamada, M. Nagashima, Y. Ueki, C. Sasaki, Y. Yamada, T. Taguchi, K. Tadatomo, H. Okagawa, and H. Kudo, “Internal quantum efficiency of highly-efficient InxGa1-xN-based near-ultraviolet light-emitting diodes,” Appl. Phys. Lett.83(24), 4906–4908 (2003). [CrossRef]
- S. C. Huang, K. C. Shen, D. S. Wuu, P. M. Tu, H. C. Kuo, C. C. Tu, and R. H. Horng, “Study of 375nm ultraviolet InGaN/AlGaN light-emitting diodes with heavily Si-doped GaN transition layer in growth mode, internal quantum efficiency, and device performance,” J. Appl. Phys.110(12), 123102 (2011). [CrossRef]
- A. Neogi, C. W. Lee, H. O. Everitt, T. Kuroda, A. Tackeuchi, and E. Yablonovitch, “Enhancement of spontaneous recombination rate in a quantum well by resonant surface plasmon coupling,” Phys. Rev. B66(15), 153305 (2002). [CrossRef]
- S. Watanabe, N. Yamada, M. Nagashima, Y. Ueki, C. Sasaki, Y. Yamada, T. Taguchi, K. Tadatomo, H. Okagawa, and H. Kudo, “Internal quantum efficiency of highly-efficient InxGa1-xN-based near-ultraviolet light-emitting diodes,” Appl. Phys. Lett.83(24), 4906–4908 (2003). [CrossRef]
- S. Watanabe, N. Yamada, M. Nagashima, Y. Ueki, C. Sasaki, Y. Yamada, T. Taguchi, K. Tadatomo, H. Okagawa, and H. Kudo, “Internal quantum efficiency of highly-efficient InxGa1-xN-based near-ultraviolet light-emitting diodes,” Appl. Phys. Lett.83(24), 4906–4908 (2003). [CrossRef]
- T. Kawashima, H. Yoshikawa, S. Adach, S. Fuke, and K. Ohtsuka, “Optical properties of hexagonal GaN,” J. Appl. Phys.82(7), 3528 (1997). [CrossRef]
- C. Langhammer, Z. Yuan, I. Zorić, and B. Kasemo, “Plasmonic properties of supported Pt and Pd nanostructures,” Nano Lett.6(4), 833–838 (2006). [CrossRef] [PubMed]
- C. Langhammer, Z. Yuan, I. Zorić, and B. Kasemo, “Plasmonic properties of supported Pt and Pd nanostructures,” Nano Lett.6(4), 833–838 (2006). [CrossRef] [PubMed]
Adv. Mater. (Deerfield Beach Fla.)
- M. K. Kwon, J. Y. Kim, B. H. Kim, I. K. Park, C. Y. Cho, C. C. Byeon, and S. J. Park, “Surface-plasmon-enhanced light-emitting diodes,” Adv. Mater. (Deerfield Beach Fla.)20(7), 1253–1257 (2008). [CrossRef]
Appl. Phys. Lett.
- C. Y. Cho, S. J. Lee, J. H. Song, S. H. Hong, S. M. Lee, Y. H. Cho, and S. J. Park, “Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles,” Appl. Phys. Lett.98(5), 051106 (2011). [CrossRef]
- K. Okamoto, I. Niki, A. Scherer, Y. Narukawa, T. Mukai, and Y. Kawakami, “Surface plasmon enhanced spontaneous emission rate of InGaN/GaN quantum wells probed by time-resolved photoluminescence spectroscopy,” Appl. Phys. Lett.87(7), 071102 (2005). [CrossRef]
- T. S. Oh, H. Jeong, Y. S. Lee, J. D. Kim, T. H. Seo, H. Kim, A. H. Park, K. J. Lee, and E. K. Suh, “Coupling of InGaN/GaN multiquantum-wells photoluminescence to surface plasmons in platinum nanocluster,” Appl. Phys. Lett.95(11), 111112 (2009). [CrossRef]
- Y. Narukawa, S. Saijou, Y. Kawakami, S. Fujita, T. Mukai, and S. Nakamura, “Radiative and nonradiative recombination processes in ultraviolet light-emitting diode composed of In0.02Ga0.98N active layer,” Appl. Phys. Lett.74(4), 558–560 (1999). [CrossRef]
- T. Wang, Y. H. Lee, J. P. Ao, J. Bai, and S. Sakai, “1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate,” Appl. Phys. Lett.81(14), 2508–2510 (2002). [CrossRef]
- T. Nishida, H. Saito, and N. Kobayashi, “Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN,” Appl. Phys. Lett.79(6), 711–712 (2001). [CrossRef]
- S. Watanabe, N. Yamada, M. Nagashima, Y. Ueki, C. Sasaki, Y. Yamada, T. Taguchi, K. Tadatomo, H. Okagawa, and H. Kudo, “Internal quantum efficiency of highly-efficient InxGa1-xN-based near-ultraviolet light-emitting diodes,” Appl. Phys. Lett.83(24), 4906–4908 (2003). [CrossRef]
J. Appl. Phys.
- T. Kawashima, H. Yoshikawa, S. Adach, S. Fuke, and K. Ohtsuka, “Optical properties of hexagonal GaN,” J. Appl. Phys.82(7), 3528 (1997). [CrossRef]
- S. C. Huang, K. C. Shen, D. S. Wuu, P. M. Tu, H. C. Kuo, C. C. Tu, and R. H. Horng, “Study of 375nm ultraviolet InGaN/AlGaN light-emitting diodes with heavily Si-doped GaN transition layer in growth mode, internal quantum efficiency, and device performance,” J. Appl. Phys.110(12), 123102 (2011). [CrossRef]
J. Cryst. Growth
- T. Mukai, D. Morita, and S. Nakamura, “High-power UV InGaN/AlGaN double-heterostructure LEDs,” J. Cryst. Growth189/190(158), 778–781 (1998). [CrossRef]
- C. H. Wang, C. C. Ke, C. H. Chiu, J. C. Li, H. C. Kuo, T. C. Lu, and S. C. Wang, “Study of the internal quantum efficiency of InGaN/GaN UV LEDs on patterned sapphire substrate using the electroluminescence method,” J. Cryst. Growth315(1), 242–245 (2011). [CrossRef]
Nano Lett.
- C. Langhammer, Z. Yuan, I. Zorić, and B. Kasemo, “Plasmonic properties of supported Pt and Pd nanostructures,” Nano Lett.6(4), 833–838 (2006). [CrossRef] [PubMed]
Nanotechnology
- C. Y. Cho, M. K. Kwon, S. J. Lee, S. H. Han, J. W. Kang, S. E. Kang, D. Y. Lee, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes using silver nanoparticles embedded in p-GaN,” Nanotechnology21(20), 205201 (2010). [CrossRef] [PubMed]
Nat. Mater.
- K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, “Surface-plasmon-enhanced light emitters based on InGaN quantum wells,” Nat. Mater.3(9), 601–605 (2004). [CrossRef] [PubMed]
Nature
- P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature406(6798), 865–868 (2000). [CrossRef] [PubMed]
Opt. Eng.
- Y. Uchida and T. Taguchi, “Lighting theory and luminous characteristics of white light-emitting diodes,” Opt. Eng.44(12), 124003 (2005). [CrossRef]
Opt. Express
- L. W. Jang, D. W. Jeon, T. Sahoo, D. S. Jo, J. W. Ju, S. J. Lee, J. H. Baek, J. K. Yang, J. H. Song, A. Y. Polyakov, and I. H. Lee, “Localized surface plasmon enhanced quantum efficiency of InGaN/GaN quantum wells by Ag/SiO2 nanoparticles,” Opt. Express20(3), 2116–2123 (2012). [CrossRef] [PubMed]
Phys. Rev. B
- A. Neogi, C. W. Lee, H. O. Everitt, T. Kuroda, A. Tackeuchi, and E. Yablonovitch, “Enhancement of spontaneous recombination rate in a quantum well by resonant surface plasmon coupling,” Phys. Rev. B66(15), 153305 (2002). [CrossRef]
Phys. Status Solidi
- M. Kunzer, U. Kaufmann, K. Kohler, C. C. Leancu, S. Liu, and J. Wagner, “Near-UV to violet LEDs - wavelength dependence of efficiency limiting processes,” Phys. Status Solidi4(7), 2822–2825 (2007) (c). [CrossRef]
Other
- D. R. Lide ed., CRC Handbook of Chemistry and Physics, 90th ed. (CRC Press, 2010).
2012, Jang, Opt. Express
- C. H. Wang, C. C. Ke, C. H. Chiu, J. C. Li, H. C. Kuo, T. C. Lu, and S. C. Wang, “Study of the internal quantum efficiency of InGaN/GaN UV LEDs on patterned sapphire substrate using the electroluminescence method,” J. Cryst. Growth315(1), 242–245 (2011). [CrossRef]
- S. C. Huang, K. C. Shen, D. S. Wuu, P. M. Tu, H. C. Kuo, C. C. Tu, and R. H. Horng, “Study of 375nm ultraviolet InGaN/AlGaN light-emitting diodes with heavily Si-doped GaN transition layer in growth mode, internal quantum efficiency, and device performance,” J. Appl. Phys.110(12), 123102 (2011). [CrossRef]
- C. Y. Cho, S. J. Lee, J. H. Song, S. H. Hong, S. M. Lee, Y. H. Cho, and S. J. Park, “Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles,” Appl. Phys. Lett.98(5), 051106 (2011). [CrossRef]
- C. Y. Cho, M. K. Kwon, S. J. Lee, S. H. Han, J. W. Kang, S. E. Kang, D. Y. Lee, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes using silver nanoparticles embedded in p-GaN,” Nanotechnology21(20), 205201 (2010). [CrossRef] [PubMed]
- T. S. Oh, H. Jeong, Y. S. Lee, J. D. Kim, T. H. Seo, H. Kim, A. H. Park, K. J. Lee, and E. K. Suh, “Coupling of InGaN/GaN multiquantum-wells photoluminescence to surface plasmons in platinum nanocluster,” Appl. Phys. Lett.95(11), 111112 (2009). [CrossRef]
- M. K. Kwon, J. Y. Kim, B. H. Kim, I. K. Park, C. Y. Cho, C. C. Byeon, and S. J. Park, “Surface-plasmon-enhanced light-emitting diodes,” Adv. Mater. (Deerfield Beach Fla.)20(7), 1253–1257 (2008). [CrossRef]
- M. Kunzer, U. Kaufmann, K. Kohler, C. C. Leancu, S. Liu, and J. Wagner, “Near-UV to violet LEDs - wavelength dependence of efficiency limiting processes,” Phys. Status Solidi4(7), 2822–2825 (2007) (c). [CrossRef]
- C. Langhammer, Z. Yuan, I. Zorić, and B. Kasemo, “Plasmonic properties of supported Pt and Pd nanostructures,” Nano Lett.6(4), 833–838 (2006). [CrossRef] [PubMed]
- Y. Uchida and T. Taguchi, “Lighting theory and luminous characteristics of white light-emitting diodes,” Opt. Eng.44(12), 124003 (2005). [CrossRef]
- K. Okamoto, I. Niki, A. Scherer, Y. Narukawa, T. Mukai, and Y. Kawakami, “Surface plasmon enhanced spontaneous emission rate of InGaN/GaN quantum wells probed by time-resolved photoluminescence spectroscopy,” Appl. Phys. Lett.87(7), 071102 (2005). [CrossRef]
- K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, “Surface-plasmon-enhanced light emitters based on InGaN quantum wells,” Nat. Mater.3(9), 601–605 (2004). [CrossRef] [PubMed]
- S. Watanabe, N. Yamada, M. Nagashima, Y. Ueki, C. Sasaki, Y. Yamada, T. Taguchi, K. Tadatomo, H. Okagawa, and H. Kudo, “Internal quantum efficiency of highly-efficient InxGa1-xN-based near-ultraviolet light-emitting diodes,” Appl. Phys. Lett.83(24), 4906–4908 (2003). [CrossRef]
- A. Neogi, C. W. Lee, H. O. Everitt, T. Kuroda, A. Tackeuchi, and E. Yablonovitch, “Enhancement of spontaneous recombination rate in a quantum well by resonant surface plasmon coupling,” Phys. Rev. B66(15), 153305 (2002). [CrossRef]
- T. Wang, Y. H. Lee, J. P. Ao, J. Bai, and S. Sakai, “1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate,” Appl. Phys. Lett.81(14), 2508–2510 (2002). [CrossRef]
- T. Nishida, H. Saito, and N. Kobayashi, “Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN,” Appl. Phys. Lett.79(6), 711–712 (2001). [CrossRef]
- P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature406(6798), 865–868 (2000). [CrossRef] [PubMed]
- Y. Narukawa, S. Saijou, Y. Kawakami, S. Fujita, T. Mukai, and S. Nakamura, “Radiative and nonradiative recombination processes in ultraviolet light-emitting diode composed of In0.02Ga0.98N active layer,” Appl. Phys. Lett.74(4), 558–560 (1999). [CrossRef]
- T. Mukai, D. Morita, and S. Nakamura, “High-power UV InGaN/AlGaN double-heterostructure LEDs,” J. Cryst. Growth189/190(158), 778–781 (1998). [CrossRef]
- T. Kawashima, H. Yoshikawa, S. Adach, S. Fuke, and K. Ohtsuka, “Optical properties of hexagonal GaN,” J. Appl. Phys.82(7), 3528 (1997). [CrossRef]
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