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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 3 — Feb. 11, 2013
  • pp: 3547–3556

Nitride-based micron-scale hexagonal pyramids array vertical light emitting diodes by N-polar wet etching

Jun Ma, Liancheng Wang, Zhiqiang Liu, Guodong Yuan, Xiaoli Ji, Ping Ma, Junxi Wang, Xiaoyan Yi, Guohong Wang, and Jinmin Li  »View Author Affiliations


Optics Express, Vol. 21, Issue 3, pp. 3547-3556 (2013)
http://dx.doi.org/10.1364/OE.21.003547


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Abstract

In this work, we reported the fabrication of nitride-based hexagonal pyramids array (HPA) vertical-injection light emitting diodes (V-LEDs) by N-polar wet etching. The performance of HPA V-LEDs devices was significantly improved with 30% higher internal quantum efficiency compared with conventional roughened broad area V-LEDs. The simulated extraction efficiency by finite difference time domain method was 20% higher than typical roughened V-LEDs. The reversed leakage current of HPA V-LEDs was reduced due to better crystal quality, which was confirmed by conductive atomic force microscopy measurement. Furthermore, the efficiency droop for HPA V-LEDs were substantially alleviated.

© 2013 OSA

OCIS Codes
(250.0250) Optoelectronics : Optoelectronics
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

ToC Category:
Optoelectronics

History
Original Manuscript: October 31, 2012
Revised Manuscript: January 11, 2013
Manuscript Accepted: January 23, 2013
Published: February 5, 2013

Citation
Jun Ma, Liancheng Wang, Zhiqiang Liu, Guodong Yuan, Xiaoli Ji, Ping Ma, Junxi Wang, Xiaoyan Yi, Guohong Wang, and Jinmin Li, "Nitride-based micron-scale hexagonal pyramids array vertical light emitting diodes by N-polar wet etching," Opt. Express 21, 3547-3556 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-3-3547


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