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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 4 — Feb. 25, 2013
  • pp: 4116–4125

High-speed, low-loss silicon Mach–Zehnder modulators with doping optimization

Xi Xiao, Hao Xu, Xianyao Li, Zhiyong Li, Tao Chu, Yude Yu, and Jinzhong Yu  »View Author Affiliations


Optics Express, Vol. 21, Issue 4, pp. 4116-4125 (2013)
http://dx.doi.org/10.1364/OE.21.004116


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Abstract

We demonstrate a high-speed silicon Mach-Zehnder modulator (MZM) with low insertion loss, based on the carrier depletion effect in a lateral PN junction. A 1.9 dB on-chip insertion loss and a VπLπ < 2 V·cm were achieved in an MZM with a 750 μm-long phase shifter by properly choosing the doping concentration and precisely locating the junction. High-speed modulations up to 45–60 Gbit/s have been demonstrated with an additional 1.6 dB optical loss, indicating a total insertion loss of 3.5 dB. A high extinction ratio of 7.5 dB was also realized at the bit rate of 50 Gbit/s with an acceptable insertion loss of 6.5 dB.

© 2013 OSA

OCIS Codes
(130.0130) Integrated optics : Integrated optics
(130.0250) Integrated optics : Optoelectronics
(130.4110) Integrated optics : Modulators

ToC Category:
Integrated Optics

History
Original Manuscript: December 6, 2012
Revised Manuscript: January 15, 2013
Manuscript Accepted: January 20, 2013
Published: February 11, 2013

Citation
Xi Xiao, Hao Xu, Xianyao Li, Zhiyong Li, Tao Chu, Yude Yu, and Jinzhong Yu, "High-speed, low-loss silicon Mach–Zehnder modulators with doping optimization," Opt. Express 21, 4116-4125 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-4-4116


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